MIL-S-19500/37E 16 September 2001 SUPERSEDING MIL-S-19500/37D 22 November 1971 The documentation and process conversion measures necessary to comply with this document shall be completed by 16 December, 2001. MILITARY SPECIFICATION * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N333, 2N335, 2N336, 2N333A, 2N335A, 2N336A, 2N333T2, 2N335T2, 2N336T2, 2N333LT2, 2N335LT2, 2N336LT2 2N333AT2, 2N335AT2, 2N336AT2, 2N333ALT2, 2N335ALT2, AND 2N336ALT2, JAN Inactive for new design after 7 June 1999 This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon, NPN, low-power transistors. * 1.2 Physical dimensions. See figure 1 (TO-5 for isolated leads only) and figure 2 (TO-205AA). * 1.3 Maximum ratings. VEBO PT TA = 25°C VCEO 2N333, T2, LT2 2N335, T2, LT2 2N336, T2, LT2 mW 2N333A, T2, LT2 2N335A, T2, LT2 2N336A, T2, LT2 mW V dc (1) 150 (2) 500 45 Tstg VCBO V dc 2N333, T2, LT2 2N335, T2, LT2 2N336, T2, LT2 V dc 2N333A, T2, LT2 2N335A, T2, LT2 2N336A, T2, LT2 V dc 2N333, T2, LT2 2N335, T2, LT2 2N336, T2, LT2 °C 2N333A, T2, LT2 2N335A, T2, LT2 2N336A, T2, LT2 °C 45 1 4 -65 to +175 -65 to +175 (1) Derate approximately 1 mW/°C for T between +25°C and +175°C. A (2) Derate approximately 3.33 mW/°C for T between +25°C and +175°C. A * 1.4 Primary electrical characteristics. hfe VCB = 5 V dc, IE = -1 mA Limits 2N333, T2, LT2 2N333A, T2, LT2 Min Max 18 44 2N335, T2, LT2 2N335A, T2, LT2 37 90 fhfb VCB = 5 V dc IE = -1 mA dc Cobo VCB = 5 V dc IE = 0 mA dc 100kHz ≤ f ≤ 1 MHz MHz pF 2N336, T2, LT2 2N336A, T2, LT2 76 270 2.5 15 Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-S-19500/37E 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. * 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-202 MIL-STD-750 - Test Methods for Electronic and Electrical Component Parts. Test Methods for Semiconductor Devices. * (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. * 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 2 MIL-S-19500/37E Dimensions Symbol Inches Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP Notes TO-5 6 LD .016 .021 0.41 0.53 7, 8 LL 1.500 1.750 38.10 44.45 7, 8 LU .016 .019 0.41 0.48 7, 8 1.27 7, 8 .050 L1 L2 .250 Q 6.35 .050 7, 8 1.27 5 TL .029 .045 0.74 1.14 3, 4 TW .028 .034 0.71 0.86 3 0.25 10 r α .010 45°TP 45°TP 6 NOTES: 1. Dimension are in inches. 2. Metric equivalents are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All leads electrically isolated from the case. 9. Dimension r (radius) applies to both inside corners of tab. 10. In accordance with ANSI Y14.5M, diameters are equivalent to Φx symbology. * FIGURE 1. Physical dimensions of transistors, types 2N333, 2N333A, 2N335, 2N335A, 2N336, and 2N336A (TO-5). 3 MIL-S-19500/37E Dimensions Symbol Inches Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP Notes TO-39 6 LD .016 .021 0.41 0.53 7, 8 LL .500 .750 12.70 19.05 7, 8, 12 LU .016 .019 0.41 0.48 7, 8 1.27 7, 8 .050 L1 L2 .250 Q 6.35 .050 7, 8 1.27 5 TL .029 .045 0.74 1.14 3, 4 TW .028 .034 0.71 0.86 3 0.25 10 r α .010 45°TP 45°TP 6 NOTES: 1. Dimension are in inches. 2. Metric equivalents are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ANSI Y14.5M, diameters are equivalent to Φx symbology. 12. For "L" suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (19.05 mm) maximum. * FIGURE 2. Physical dimensions of transistors, types 2N333T2, 2N333AT2, 2N335T2, 2N335AT2, 2N336T2, 2N336AT2 2N333LT2, 2N333ALT2, 2N335LT2, 2N335ALT2, 2N336LT2, and 2N336ALT2 (TO-205AD). 4 MIL-S-19500/37E * 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 and figure 2. 3.4.1 Lead material and finish. Lead material shall be Kovar or Alloy 52. Lead finish shall be gold-plated. (Leads may be tin-coated if specified in the contract or order, and this requirement shall not be construed as adversely affecting the qualified product status of the device, or applicable JAN marking, see 6.2). 3.4.1.1 Selectivity of lead material. Where choice of lead material (see 3.4.1) is desired, it shall be specified in the contract or order (see 6.2). 3.4.2 Terminal-lead length. Terminal-lead length(s) other than that specified in figure 1 may be furnished when so stipulated under contract or order (see 6.2) where the devices covered herein are required directly for particular equipment-circuit installation or for automatic-assembly-technique programs. Where other lead lengths are required and provided, it shall not be construed as adversely affecting the qualified product status of the device, or applicable JAN marking. * 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and tables I, II, and III. * 3.6 Electrical test requirements. The electrical test requirements shall be group A as specified herein. * 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, the following marking may be omitted from the body of the transistor. a. Country of origin. b. Manufacturer's identification. * 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. * 4. VERIFICATION * 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Conformance inspection (see 4.3). * 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified in tables I, II, and III and herein. * 4.3 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified in groups A, B, and C herein. 4.3.1 Group A inspection. Group A inspection shall consist of the inspections and tests specified in table I. 4.3.2 Group B inspection. Group B inspection shall consist of the inspections and tests specified in table II. 4.3.3 Group C inspection. Group C inspection shall consist of the inspections and tests specified in table III. This inspection shall be conducted on the initial lot and thereafter every 6 months during production. 5 MIL-S-19500/37E 4.3.4 Groups B and C life-test samples. Sample units that have been subjected to the group B 340-hour life test may be continued on test to 1,000 hours in order to satisfy group C life-test requirements. These sample units shall be predesignated, and shall remain subjected to the group C 1,000-hour acceptance evaluation after they have passed the group B 340-hour acceptance criteria. The cumulative total of failures found during the 340-hour test and during the subsequent interval up to 1,000 hours shall be computed for the 1,000-hour acceptance criteria (see 4.3.3). 4.3.5 Representative lot (groups B and C inspections). At the option of the manufacturer, any of the types 2N333, 2N335, and 2N336 may be used for groups B and C inspections as representative of a lot containing the prototypes, provided the type so selected is in the lot. Any of the types 2N333A, 2N335A, and 2N336A may be used for groups B and C inspections as representative of a lot containing the "A" types, provided the type so selected is in the lot. 4.4 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.4.1 Resistance to solvents. Transistors shall be tested in accordance with method 215 of MIL-STD-202. The following details shall apply: a. All areas of the transistor body where marking has been applied shall be brushed. b. After subjection to the tests, there shall be no evidence of mechanical damage to the device and markings shall have remained legible. 6 MIL-S-19500/37E * TABLE I. Group A inspection. Limits Inspection MIL-STD-750 Symbol Method Min Max Unit Details Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Collector to emitter cutoff current 3041 Bias condition D; VCE = 30 V dc ICEO 1.0 µA dc Collector to base cutoff current 3036 Bias condition D; VCB = 30 V dc ICBO 0.5 µA dc Breakdown voltage, collector to base 3001 Bias condition D; IC = 50 µA dc BVCBO 45 V dc Breakdown voltage, collector to emitter 3011 Bias condition D; IC = 1 mA dc BVCEO 45 V dc Breakdown voltage, collector to emitter 3011 Bias condition D; IC = 100 µA dc BVCEO 45 V dc Breakdown voltage, emitter to base 3026 Bias condition D BVEBO 1.0 4.0 V dc V dc 2N333, 2N335, 2N336, T2, LT2 2N333A, 2N335A, 2N336A, T2, LT2 IE = 10 µA dc IE = 100 µA dc Collector to emitter voltage (saturated) IC = 5 mA dc 2N333, 2N335, 2N336, T2, LT2 2N333A, 2N335A, 2N336A, T2, LT2 IB = 2.2 mA dc IB = 1.0 mA dc Forward-current transfer ratio 3076 VCE(sat) VCE = 5 V dc; IC = 10 mA dc 1.0 1.0 hFE 2N333, 2N333A, T2, LT2 2N335 2N335A, T2, LT2 2N336, 2N336A, T2, LT2 Forward-current transfer ratio 6 12 25 3076 VCE = 5 V dc; IC = 100 µA dc 2N333, 2N333A, T2, LT2 2N335 2N335A, T2, LT2 2N336, 2N336A, T2, LT2 hFE 3 6 15 7 60 120 275 V dc V dc MIL-S-19500/37E * TABLE I. Group A inspection - Continued. Limits Inspection MIL-STD-750 Symbol Method Min Max Unit 25 µA dc µmho Details Subgroup 3 High-temperature operation: Collector to base cutoff current TA = +150°C 3036 Low-temperature operation: Small-signal short-circuit forward-current transfer ratio Bias condition D; VCB = 30 V dc ICBO TA = -65°C 3206 hfe VCB = 5 V dc IE = -1 mA dc 2n333, 2N333A, T2, LT2 2N335 2N335A, T2, LT2 2N336, 2N336A, T2, LT2 8 18 35 Subgroup 4 Small-signal open-circuit output admittance 3216 VCB = 5 V dc; IE = -1 mA dc hob 0 1.2 Small-signal open-circuit reverse-voltage transfer ratio 3211 VCB = 5 V dc; IE = -1 mA dc hrb 0 1x10 Small-signal open-circuit input impedance 3201 VCB = 5 V dc; IE = -1 mA dc hib 2N333, 2N333A 2N335, 2N335A 2N336, 2N336A 30 80 ohms *For T2, and LT2 only. 20 80 ohms 18 37 76 44 90 270 Small-signal open-circuit forward-current transfer ratio 3206 VCB = 5 V dc; IE = -1 mA dc hfe 2N333, 2N333A, T2, LT2 2N335, 2N335A, T2, LT2 2N336, 2N336A, T2, LT2 Magnitude of commonemitter small-signal shortcircuit forward-current transfer ratio 3306 -3 VCE = 5 V dc; IC = 1 mA dc; f = 2.5 MHz 2N333, T2, LT2 2N335, T2, LT2 2N336, T2, LT2 2N333A, T2, LT2 2N335A, T2, LT2 2N336A, T2, LT2 hfe 40 60 120 30 30 30 8 MIL-S-19500/37E * TABLE I. Group A inspection - Continued. Limits Inspection MIL-STD-750 Symbol Method Min Max Unit Details Subgroup 4 Magnitude of commonemitter small-signal shortcircuit forward-current transfer ratio 3306 VCE = 5 V dc; IC = 1 mA dc; f = 10 MHz hfe 2N333, T2, LT2 2N335, T2, LT2 2N336, T2, LT2 2N333A, T2, LT2 2N335A, T2, LT2 2N336A, T2, LT2 Small-signal short-circuit forward-current transferratio, cutoff frequency 13 15 17 13 13 13 2.5 MHz 3301 VCB = 5 V dc; IE = -1 mA dc fhfb Open circuit output capacitance 3236 VCB = 5 V dc; Vsig = 0.1 Vac; 100 kHz ≤ f ≤ 1MHz Cobo 15 pF Noise figure 3246 VCB = 5 V dc; IE = -1 mA dc; f = 1kHz; Rg = 500 ohms NF 30 dB Subgroup 5 9 MIL-S-19500/37E * TABLE II. Group B inspection. Limits Inspection MIL-STD-750 Symbol Method Min Max Unit 0.5 µA dc Details Subgroup 1 Physical dimensions 2066 (See figure 1) Subgroup 2 Solderability 2026 Thermal shock (temperature cycling) 1051 Test condition C, except: 10 cycles; exposure time at temperature extremes = 15 minutes (minimum); and in step 3, Tmax = +175°C. Thermal shock (glass strain) 1056 Test condition A Moisture resistance 1021 End points: Collector to base cutoff current 3036 Bias condition D; VCB = 30 V dc Small-signal short-circuit forward-current transfer ratio 2n333, 2N333A, T2, LT2 2N335 2N335A, T2, LT2 2N336, 2N336A, T2, LT2 3206 VCB = 5 V dc; IE = -1 mA dc ICBO hfe 18 37 76 Subgroup 3 Shock (2N333, 2N335, 2N336, T2, LT2) Shock (2N333A, 2N335A, 2N336A, T2, LT2) 2016 Vibration, variable frequency 2056 Constant acceleration 2006 2016 Nonoperating; 500 G; 1 ms; 5 blows in each orientation X1, Y1, Y2, and Z1. Nonoperating; 1500 G; approximately 0.5 ms; 5 blows in each orientation X1, Y1, Y2, and Z1. Nonoperating 20,000 G in each orientation X1, Y1, Y2, and Z1 End points (Same as subgroup 2) 10 44 90 270 MIL-S-19500/37E * TABLE II. Group B inspection - Continued. Limits Inspection MIL-STD-750 Symbol Method Min Max Unit Details Subgroup 4 Terminal strength (lead fatigue) 2036 Test condition E End points: Hermetic seal 1071 Test conditions G or H for the fine leaks; test conditions A, C, D, or F for gross leaks. -7 1X10 atm cc/sec 1.0 µA dc Subgroup 5 Alt atmosphere (corrosion) 1041 Subgroup 6 High temperature life (nonoperating) 2N333, 2N335, 2N336, T2, LT2 2N333A, 2N335A, 2N336A, T2, LT2 1032 Time = 340 hours (see 4.3.4) Ttg = +175°C Ttg = +200°C Collector to base cutoff current 3036 Bias condition D; VCB = 30 V dc ICBO Breakdown voltage, collector to base 3001 Bias condition D; IC = 50 µA dc BVCBO Forward-current transfer ratio 3076 Small-signal short-circuit forwardcurrent transfer ratio 3206 End points: VCE = 5 V dc; VCB = 5 V dc; IE = -1 mA dc 1027 TA = +125°C; VCB = 20 V dc; P = 50 mW; time = 340 hours (see 4.3.4) 1027 TA = +25°C; VCB = 30 V dc; P = 500 mW; time = 340 hours (see 4.3.4) End points: (Same as subgroup 6) Steady-state operation life (2N333A, 2N335A, 2N336A, T2, LT2) hfe 15 30 60 Subgroup 7 End points: (Same as subgroup 6) 11 V dc ±25 ∆hFE IC = 10 mA dc 2n333, 2N333A, T2, LT2 2N335 2N335A, T2, LT2 2N336, 2N336A, T2, LT2 Steady-state operation life (2N333, 2N335, 2N336, T2, LT2) 40 Percent change from initial recorded value MIL-S-19500/37E * TABLE III. Group C inspection. Limits Inspection MIL-STD-750 Symbol Method Details Subgroup 1 Resistance to solvents MIL-STD-202, method 215 (see4.4.1) Subgroup 2 High temperature life (nonoperating) 2N333, 2N335, 2N336, T2, LT2 2N333A, 2N335A, 2N336A, T2, LT2 1031 (see 4.3.4) Ttsg = +175°C Ttsg = +200°C End points: (Same as subgroup 6 of group B) Subgroup 3 Steady-state operation life (2N333, 2N335, 2N336, T2, LT2) 1026 TA = +125°C; VCB = 20 V dc; P = 50 mW; (see 4.3.4) 1026 TA = +25°C; VCB = 30 V dc; P = 500 mW; (see 4.3.4) End points: (Same as subgroup 6 of group B) Steady-state operation life (2N333A, 2N335A, 2N336A, T2, LT2) End points: (Same as subgroup 6 of group B) 12 Min Max Unit MIL-S-19500/37E * 5. PACKAGING * 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency, or within the Military Department's System Command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES * (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. * 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2). c. Packaging requirements (see 5.1). d. Lead finish if other than gold-plated (see 3.4.1). e. Lead material (see 3.4.1.1). f. Terminal-lead length if other than as specified on figure 1 (see 3.4.2). * 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000. * 6.4 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodians: Army - CR Navy - NW Air Force - 11 DLA - CC Preparing activity: DLA - CC (Project 5961-2505) Review activities: Army - AR, MI Navy - AS, MC Air Force - 19 13 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-S-19500/37E 2. DOCUMENT DATE 16 September 2001 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N333, 2N335, 2N336, 2N333A, 2N335A, 2N336A, 2N333T2, 2N335T2, 2N336T2, 2N333LT2, 2N335LT2, 2N336LT2, 2N333AT2, 2N335AT2, 2N336AT2, 2N333ALT2, 2N335ALT2, AND 2N336ALT2 JAN 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99