ASEMI DH2F100N4SE-1001

DH2F100N4SE
Ultra-Fast Soft Recovery Diode Module
Description
Equivalent Circuit and Package
Ultra-FRD module devices are optimized to reduce losses
and EMI/RFI in high frequency power conditioning electrical systems.
These diode modules are ideally suited for power converters,
motors drives and other applications where switching losses
are significant portion of the total losses.
Equivalent Circuit
1
Features
2
H
(Common Heat Sink)
☞ Repetitive Reverse Voltage : VRRM = 400V
☞ Low Forward Voltage Drop : VF(typ.) = 1.1V
☞ Average Forward Current : IF(AV.) = 100A @ Tc = 85℃
☞ Ultra-Fast Reverse Recovery Time : trr(typ.) = 50ns
☞ Extensive Characterization of Recovery Parameters
☞ Reduced EMI and RFI
☞ Non Isolation Type Package and 175℃ Operating Junction Temperature
☞ Dual FRD Construction
Package : 3DM - 2NIE Series
Applications
Non Isolation Type
High Speed & High Power Converters, Welders,
Various Switching and Telecommunication Power Supply.
Please see the package Out line information
Ordering Information
Device Name
Optional
Information
DH2F100N4SE
Common Heat Sink
Non Isolation Type
Absolute Maximum Ratings @ Tj=25℃(Per Leg)
Symbol
VRRM
VR(DC)
IF(AV)
Parameter
Conditions
I 2t
Repetitive Peak Reverse Voltage
Reverse DC Voltage
Average Forward Current
@ Tc = 25℃
@ Tc = 85℃
Surge(non-repetitive) Forward
Current
I2t for Fusing
Tj
Tstg
-
Junction Temperature
Storage Temperature
Mounting Torque(M6)
Terminal Torque(M6)
Weight
IFSM
Resistive Load
One Half Cycle at 60Hz,
Peak Value
Value for One Cycle Current,
tw = 8.3ms, Tj = 25℃ Start
Typical Including Screws
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Ratings
400
320
180
100
2000
Unit
V
V
A
A
A
16.7 * 103
A2s
-40 ~ 175
-40 ~ 150
4.0
3.0
85
℃
℃
N.m
N.m
g
DH2F100N4SE
Thermal Characteristics
Values
Symbol
Rth(j-c)
Parameter
Thermal Resistance(Non Isolation Type)
Conditions
Junction to Case
Min.
Typ.
Max.
-
-
0.45
Unit
℃/W
Electrical Characteristics @ Tj=25℃ (unless otherwise specified)
Values
Symbol
VR
VFM
IRRM
Trr
Parameter
Cathode Anode Breakdown
Voltage
Maximum Forward Voltage
Repetitive Peak Reverse
Current
Reverse Recovery Time
Conditions
Min.
Typ.
Max.
400
-
-
V
-
1.1
1.05
-
1.4
1.3
1.0
V
V
mA
Tc = 25℃
-
50
80
ns
Tc = 100℃
-
80
-
ns
IR = 100uA
IFM = 100A, Tc = 25℃
IFM = 100A, Tc =100℃
TC = 100℃, VRRM applied
IFM = 100A,
VR = 200V
di/dt=-200A/us
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Unit
DH2F100N4SE
Performance Curves
1000
Reverse Recovery Time,trr,[ns]
80
Forward Current IF[A]
TC=100℃
100
TC=25℃
10
60
40
20
0
1
0
0.5
1
1.5
100
2
1000
di/dt[A/us]
Forward Voltage Drop VF[V]
Fig. 1 : Typical Forward Voltage Drop
vs. Instantaneous Forward Current
Fig. 2 : Typical Reverse Recovery Time
vs. -di/dt
Average Forw ard C urrent IF(AVG) [A
Thermal Responce Zthjc[℃/w]
1
0.1
0.01
0.001
1.E-05
120
80
DC
40
0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
60
Rectangular Pulse Duration[sec]
80
100
120
Case Temperature [℃]
Fig. 3 : Transient Thermal Impedance(Zthjc)
Characteristics
Fig. 4 : Forward Current Derating Curve
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140
160
DH2F100N4SE
Package Out Line Information
2.5±0.2
MAX 16.8
3DM-2NIE Series
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