BYT08P-400 BYT08PI-400 ® FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) 8A VRRM 400 V VF (max) 1.4 V trr (max) 35 ns A A FEATURES AND BENEFITS ■ ■ ■ ■ K K VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: TO-220AC Insulation voltage: 2500 VRMS Capacitance = 7 pF T0-220AC (Plastic) Insulated TO-220AC (Plastic) DESCRIPTION This single rectifier is suited for Switch Mode Power Supplies and other power converters. This device is intended to free-wheeling function in converters and motor control circuits. ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IFRM Repetitive peak forward current IF(RMS) IF(AV) RMS forward current Average forward current IFSM Surge non repetitive forward current Tstg Storage temperature range Tj tp=5 µs F=5kHz TO-220AC Tc = 120°C δ = 0.5 Insulated TO-220AC Tc = 105°C tp = 10 ms Sinusoidal Maximum operating junction temperature May 2002 - Ed: 4A Value Unit 400 V 200 A 16 A 8 A 100 A - 40 to + 150 °C 150 °C 1/7 BYT08P-400 / BYT08PI-400 THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case Value 2.5 3.5 TO-220AC Ins. TO-220AC Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol VF * Parameter Test Conditions Forward voltage drop Tj = 25°C Min. Typ. IF = 8 A Reverse leakage current Tj = 25°C Unit V 1.4 Tj = 100°C IR ** Max. 1.5 VR = VRRM Tj = 100°C 15 µA 2.5 mA Max. 75 Unit ns Pulse test : * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the conduction losses use the following equation: P = 1.1 x IF(AV) + 0.024 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25°C Min. IF = 1A VR = 30V dIF/dt = - 15A/µs Typ. 35 IF = 0.5A IR = 1A Irr = 0.25A TURN-OFF SWITCHING CHARACTERISTICS Symbol tIRM IRM C= 2/7 VRP VCC Parameter Maximum reverse recovery time Test Conditions dIF/dt = - 32 A/µs dIF/dt = - 64 A/µs VCC = 200 V IF = 8 A Lp 0.05 µH Tj = 100°C (see fig. 13) Maximum reverse recovery current dIF/dt = - 32 A/µs Turn-off overvoltage coefficient Tj = 100°C VCC = 60V IF = IF(AV) dIF/dt = - 30A/µs Lp = 1µH dIF/dt = - 64 A/µs Min. Typ. Max. Unit 75 ns 50 2.2 A 2.8 3.3 / BYT08P-400 / BYT08PI-400 Fig. 1: Average forward power dissipation versus average forward current . Fig. 2: Peak current versus form factor. PF(av)(W) IM(A) 14 δ = 0.1 12 δ = 0.2 100 90 80 70 60 50 40 30 20 10 0 0.0 δ = 0.5 δ = 0.05 10 δ=1 8 6 4 T 2 0 δ=tp/T IF(av) (A) 0 1 2 3 4 5 6 7 8 tp 9 10 T P=5W δ=tp/T tp P=10W P=20W 0.1 0.2 0.3 0.4 δ 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 3: Average forward current versus ambient temperature (δ=0.5). IF(av)(A) 10 9 8 7 6 5 4 3 2 1 0 Rth(j-a)=Rth(j-c) Insulated Rth(j-a)=15°C/W T δ=tp/T 0 tp 25 Tamb(°C) 50 Fig. 4-1: Non repetitive surge peak forward current versus overload duration (TO-220AC). IM(A) 100 90 80 70 60 50 40 30 IM 20 10 0 1E-3 Non insulated 75 100 125 150 Fig. 4-2: Non repetitive surge peak forward current versus overload duration (insulated TO-220AC). IM(A) Tc=25°C Tc=50°C Tc=75°C t δ=0.5 t(s) 1E-2 1E-1 1E+0 90 80 70 60 50 40 30 20 10 0 1E-3 Tc=50°C Tc=25°C Tc=75°C IM t δ=0.5 t(s) 1E-2 1E-1 1E+0 3/7 BYT08P-400 / BYT08PI-400 Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 6: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) K=[Zth(j-c)/Rth(j-c)] 100.0 1.0 Typical values Tj=100°C δ = 0.5 0.5 10.0 δ = 0.2 Tj=25°C δ = 0.1 0.2 1.0 T Single pulse Tj=100°C tp(s) 0.1 1E-3 1E-2 δ=tp/T VFM(V) tp 1E-1 0.1 0.0 1E+0 Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). 1.0 1.5 2.0 2.5 3.0 3.5 Fig. 8: Recovery charges versus dIF/dt (per diode). C(pF) 30 28 26 24 22 20 18 16 14 12 10 0.5 Qrr(nC) 250 F=1MHz Tj=25°C 200 IF=IF(av) 90% confidence Tj=100°C 150 100 50 VR(V) 1 dIF/dt(A/µs) 10 100 0 10 200 Fig. 9: Recovery current versus dIF/dt (per diode). 50 100 200 Fig. 10: Transient peak forward voltage versus dIF/dt (per diode) IRM(A) VFP(V) 10 8 20 30 IF=IF(av) 90% confidence Tj=100°C IF=IF(av) 90% confidence Tj=100°C 25 20 6 15 4 10 2 5 dIF/dt(A/µs) 0 10 4/7 20 50 dIF/dt(A/µs) 100 200 0 0 100 200 300 400 500 BYT08P-400 / BYT08PI-400 Fig. 11: Forward recovery time versus dIF/dt (per diode) Fig. 12: Dynamic parameters versus junction temperature. Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C] tfr(µs) 1.50 1.50 IF=IF(av) 90% confidence Tj=100°C 1.25 1.25 1.00 1.00 0.75 0.75 0.50 IRM Qrr 0.50 0.25 Tj(°C) dIF/dt(A/µs) 0.00 0 100 200 300 400 500 0.25 0 25 50 75 100 125 150 Fig. 13: Turn-off switching characteristics (without series inductance). Fig. 14: Turn-off switching characteristics (with series inductance). 5/7 BYT08P-400 / BYT08PI-400 PACKAGE MECHANICAL DATA TO-220AC DIMENSIONS REF. Min. A H2 C L5 L7 ØI L6 L2 D L9 F1 E G 6/7 L4 M F Millimeters A C D E F F1 G H2 L2 L4 L5 L6 L7 L9 M Diam. I Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 4.95 5.15 10.00 10.40 16.40 typ. 13.00 14.00 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.194 0.202 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 BYT08P-400 / BYT08PI-400 PACKAGE MECHANICAL DATA TO-220AC Insulated C B DIMENSIONS b2 I REF. L F A a1 l2 a2 b1 c1 ■ ■ ■ Min. 14.23 12.70 10.20 0.64 1.15 4.48 0.35 2.10 4.58 5.85 3.55 2.54 1.45 Max. 15.87 4.50 14.70 10.45 0.96 1.39 4.82 0.65 2.70 5.58 6.85 4.00 3.00 1.75 Inches Min. 0.560 0.500 0.402 0.025 0.045 0.176 0.020 0.083 0.180 0.230 0.140 0.100 0.057 Max. 0.625 0.177 0.579 0.411 0.038 0.055 0.190 0.026 0.106 0.220 0.270 0.157 0.118 0.069 c2 e ■ A a1 a2 B b1 b2 C c1 c2 e F I L l2 Millimeters Ordering type Marking Package Weight Base qty Delivery mode BYT08P-400 BYT08P-400 TO-220AC 1.86 g. 50 Tube BYT08PI-400 BYT08PI-400 Insulated TO-220AC 1.86 g. 250 Bulk Cooling method: by conduction (C) Recommended torque value: 0.8 N.m. Maximum torque value: 1.0 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7