STMICROELECTRONICS BYT08P-400

BYT08P-400
BYT08PI-400
®
FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCT CHARACTERISTICS
IF(AV)
8A
VRRM
400 V
VF (max)
1.4 V
trr (max)
35 ns
A
A
FEATURES AND BENEFITS
■
■
■
■
K
K
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
INSULATED PACKAGE: TO-220AC
Insulation voltage: 2500 VRMS
Capacitance = 7 pF
T0-220AC
(Plastic)
Insulated
TO-220AC
(Plastic)
DESCRIPTION
This single rectifier is suited for Switch Mode
Power Supplies and other power converters.
This device is intended to free-wheeling function in
converters and motor control circuits.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
IFRM
Repetitive peak forward current
IF(RMS)
IF(AV)
RMS forward current
Average forward current
IFSM
Surge non repetitive forward current
Tstg
Storage temperature range
Tj
tp=5 µs F=5kHz
TO-220AC
Tc = 120°C
δ = 0.5
Insulated
TO-220AC
Tc = 105°C
tp = 10 ms Sinusoidal
Maximum operating junction temperature
May 2002 - Ed: 4A
Value
Unit
400
V
200
A
16
A
8
A
100
A
- 40 to + 150
°C
150
°C
1/7
BYT08P-400 / BYT08PI-400
THERMAL RESISTANCES
Symbol
Rth (j-c)
Parameter
Junction to case
Value
2.5
3.5
TO-220AC
Ins. TO-220AC
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF *
Parameter
Test Conditions
Forward voltage drop
Tj = 25°C
Min.
Typ.
IF = 8 A
Reverse leakage current
Tj = 25°C
Unit
V
1.4
Tj = 100°C
IR **
Max.
1.5
VR = VRRM
Tj = 100°C
15
µA
2.5
mA
Max.
75
Unit
ns
Pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.1 x IF(AV) + 0.024 IF2(RMS)
RECOVERY CHARACTERISTICS
Symbol
trr
Test Conditions
Tj = 25°C
Min.
IF = 1A VR = 30V dIF/dt = - 15A/µs
Typ.
35
IF = 0.5A IR = 1A Irr = 0.25A
TURN-OFF SWITCHING CHARACTERISTICS
Symbol
tIRM
IRM
C=
2/7
VRP
VCC
Parameter
Maximum reverse
recovery time
Test Conditions
dIF/dt = - 32 A/µs
dIF/dt = - 64 A/µs
VCC = 200 V
IF = 8 A
Lp  0.05 µH
Tj = 100°C
(see fig. 13)
Maximum reverse
recovery current
dIF/dt = - 32 A/µs
Turn-off overvoltage
coefficient
Tj = 100°C VCC = 60V
IF = IF(AV)
dIF/dt = - 30A/µs
Lp = 1µH
dIF/dt = - 64 A/µs
Min. Typ. Max. Unit
75 ns
50
2.2
A
2.8
3.3
/
BYT08P-400 / BYT08PI-400
Fig. 1: Average forward power dissipation versus
average forward current .
Fig. 2: Peak current versus form factor.
PF(av)(W)
IM(A)
14
δ = 0.1
12
δ = 0.2
100
90
80
70
60
50
40
30
20
10
0
0.0
δ = 0.5
δ = 0.05
10
δ=1
8
6
4
T
2
0
δ=tp/T
IF(av) (A)
0
1
2
3
4
5
6
7
8
tp
9
10
T
P=5W
δ=tp/T
tp
P=10W
P=20W
0.1
0.2
0.3
0.4
δ
0.5
0.6
0.7
0.8
0.9
1.0
Fig. 3: Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
10
9
8
7
6
5
4
3
2
1
0
Rth(j-a)=Rth(j-c)
Insulated
Rth(j-a)=15°C/W
T
δ=tp/T
0
tp
25
Tamb(°C)
50
Fig. 4-1: Non repetitive surge peak forward current
versus overload duration (TO-220AC).
IM(A)
100
90
80
70
60
50
40
30
IM
20
10
0
1E-3
Non insulated
75
100
125
150
Fig. 4-2: Non repetitive surge peak forward current
versus overload duration (insulated TO-220AC).
IM(A)
Tc=25°C
Tc=50°C
Tc=75°C
t
δ=0.5
t(s)
1E-2
1E-1
1E+0
90
80
70
60
50
40
30
20
10
0
1E-3
Tc=50°C
Tc=25°C
Tc=75°C
IM
t
δ=0.5
t(s)
1E-2
1E-1
1E+0
3/7
BYT08P-400 / BYT08PI-400
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
K=[Zth(j-c)/Rth(j-c)]
100.0
1.0
Typical values
Tj=100°C
δ = 0.5
0.5
10.0
δ = 0.2
Tj=25°C
δ = 0.1
0.2
1.0
T
Single pulse
Tj=100°C
tp(s)
0.1
1E-3
1E-2
δ=tp/T
VFM(V)
tp
1E-1
0.1
0.0
1E+0
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1.0
1.5
2.0
2.5
3.0
3.5
Fig. 8: Recovery charges versus dIF/dt (per
diode).
C(pF)
30
28
26
24
22
20
18
16
14
12
10
0.5
Qrr(nC)
250
F=1MHz
Tj=25°C
200
IF=IF(av)
90% confidence
Tj=100°C
150
100
50
VR(V)
1
dIF/dt(A/µs)
10
100
0
10
200
Fig. 9: Recovery current versus dIF/dt (per diode).
50
100
200
Fig. 10: Transient peak forward voltage versus
dIF/dt (per diode)
IRM(A)
VFP(V)
10
8
20
30
IF=IF(av)
90% confidence
Tj=100°C
IF=IF(av)
90% confidence
Tj=100°C
25
20
6
15
4
10
2
5
dIF/dt(A/µs)
0
10
4/7
20
50
dIF/dt(A/µs)
100
200
0
0
100
200
300
400
500
BYT08P-400 / BYT08PI-400
Fig. 11: Forward recovery time versus dIF/dt (per
diode)
Fig. 12: Dynamic parameters versus junction
temperature.
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]
tfr(µs)
1.50
1.50
IF=IF(av)
90% confidence
Tj=100°C
1.25
1.25
1.00
1.00
0.75
0.75
0.50
IRM
Qrr
0.50
0.25
Tj(°C)
dIF/dt(A/µs)
0.00
0
100
200
300
400
500
0.25
0
25
50
75
100
125
150
Fig. 13: Turn-off switching characteristics (without series inductance).
Fig. 14: Turn-off switching characteristics (with series inductance).
5/7
BYT08P-400 / BYT08PI-400
PACKAGE MECHANICAL DATA
TO-220AC
DIMENSIONS
REF.
Min.
A
H2
C
L5
L7
ØI
L6
L2
D
L9
F1
E
G
6/7
L4
M
F
Millimeters
A
C
D
E
F
F1
G
H2
L2
L4
L5
L6
L7
L9
M
Diam. I
Max.
4.40
4.60
1.23
1.32
2.40
2.72
0.49
0.70
0.61
0.88
1.14
1.70
4.95
5.15
10.00
10.40
16.40 typ.
13.00
14.00
2.65
2.95
15.25
15.75
6.20
6.60
3.50
3.93
2.6 typ.
3.75
3.85
Inches
Min.
Max.
0.173
0.181
0.048
0.051
0.094
0.107
0.019
0.027
0.024
0.034
0.044
0.066
0.194
0.202
0.393
0.409
0.645 typ.
0.511
0.551
0.104
0.116
0.600
0.620
0.244
0.259
0.137
0.154
0.102 typ.
0.147
0.151
BYT08P-400 / BYT08PI-400
PACKAGE MECHANICAL DATA
TO-220AC Insulated
C
B
DIMENSIONS
b2
I
REF.
L
F
A
a1
l2
a2
b1
c1
■
■
■
Min.
14.23
12.70
10.20
0.64
1.15
4.48
0.35
2.10
4.58
5.85
3.55
2.54
1.45
Max.
15.87
4.50
14.70
10.45
0.96
1.39
4.82
0.65
2.70
5.58
6.85
4.00
3.00
1.75
Inches
Min.
0.560
0.500
0.402
0.025
0.045
0.176
0.020
0.083
0.180
0.230
0.140
0.100
0.057
Max.
0.625
0.177
0.579
0.411
0.038
0.055
0.190
0.026
0.106
0.220
0.270
0.157
0.118
0.069
c2
e
■
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
L
l2
Millimeters
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
BYT08P-400
BYT08P-400
TO-220AC
1.86 g.
50
Tube
BYT08PI-400
BYT08PI-400
Insulated
TO-220AC
1.86 g.
250
Bulk
Cooling method: by conduction (C)
Recommended torque value: 0.8 N.m.
Maximum torque value: 1.0 N.m.
Epoxy meets UL94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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