STTH152 ® HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 1.5 A VRRM 200 V Tj (max) 175 °C VF (max) 0.75 V trr(max) 32 ns FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature ■ DO-15 STTH152 ■ ■ ■ DESCRIPTION The STTH152 which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM Parameter Repetitive peak reverse voltage Value 200 Unit V IF(AV) Average forward current TI = 115°C δ = 0.5 1.5 A IFSM Surge non repetitive forward current tp=10 ms Sinusoidal 80 A Tstg Storage temperature range -65 +175 °C 175 °C Tj Maximum operating junction temperature THERMAL RESISTANCES Symbol Rth (j-a) Parameter Junction to ambient* Value Unit 45 °C/W * On infinite heatsink with 10mm lead length. November 2001 - Ed:1A 1/5 STTH152 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter IR * Reverse leakage current Tests conditions Tj = 25°C Min. VR = VRRM 2 Tj = 125°C VF ** Forward voltage drop Tj = 25°C Typ. Max. Unit 1.5 µA 40 0.95 IF = 1.5A Tj = 125°C V 0.66 0.75 Typ. Max. Unit 32 ns Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % To evaluate the maximum conduction losses use the following equation : P = 0.60 x IF(AV) + 0.10 x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr tfr VFP 2/5 Parameter Tests conditions Reverse recovery IF = 1A dIF/dt = -50A/µs time VR = 30V Forward recovery I = 1.5A dI /dt = 50A/µs F F time VFR = 1.1 x VFmax Forward recovery voltage Min. Tj = 25°C Tj = 25°C 50 ns Tj = 25°C 1.8 V STTH152 Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ=0.5). PF(av)(W) IF(av)(A) 1.6 δ = 0.1 1.8 δ = 0.2 δ = 0.5 δ = 0.05 1.4 1.6 Rth(j-a)=Rth(j-l) 1.4 1.2 δ=1 1.0 1.2 1.0 0.8 0.8 0.6 Rth(j-a)=100°C:W 0.6 0.4 T 0.4 0.2 0.2 IF(av)(A) δ=tp/T 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 tp 1.6 Tamb(°C) 0.0 0 1.8 25 50 75 100 125 150 175 Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration (printed circuit board epoxy FR4, LIeads = 10mm). Fig. 3: Thermal resistance versus lead length. Zth(j-a)/Rth(j-a) Rth(°C/W) 1.0 110 Rth(j-a) 100 0.9 90 0.8 80 0.7 70 0.6 60 Rth(j-l) δ = 0.5 0.5 50 0.4 40 0.3 30 0.2 20 10 0.1 Lleads(mm) 0 δ = 0.2 T δ = 0.1 tp(s) Single pulse δ=tp/T 0.0 5 10 15 20 25 Fig. 5: Forward voltage drop versus forward current. 1.E-01 1.E+00 1.E+01 1.E+02 tp 1.E+03 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). IFM(A) C(pF) 100.0 100 F=1MHz Vosc=30mV Tj=25°C Tj=125°C (Maximum values) 10.0 Tj=25°C (Maximum values) Tj=125°C (Typical values) 10 1.0 VFM(V) VR(V) 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100 1000 3/5 STTH152 Fig. 7: Reverse recovery time versus dIF/dt (90% confidence). Fig. 8: Peak reverse recovery current versus dIF/dt (90% confidence). trr(ns) IRM(A) 4.0 90 IF=1.5A VR=100V 80 IF=1.5A VR=100V 3.5 70 3.0 Tj=125°C 60 Tj=125°C 2.5 50 2.0 Tj=25°C 40 Tj=25°C 1.5 30 1.0 20 10 0.5 dIF/dt(A/µs) dIF/dt(A/µs) 0.0 0 1 10 100 1000 Fig. 9: Relative variations of dynamic parameters versus junction temperature. IRM; trr; Qrr[Tj]/IRM; trr; Qrr[Tj=25°C] 3.5 IF=1.5A dIF/dt=200A/µs VR=100V 3.0 Qrr 2.5 2.0 trr 1.5 IRM Tj(°C) 1.0 25 4/5 50 75 100 125 150 175 1 10 100 1000 STTH152 PACKAGE MECHANICAL DATA DO-15 DIMENSIONS C D ■ ■ REF. C A B Millimeters Inches Min. Max. Min. Max. A 6.05 6.75 0.238 0.266 B 2.95 3.53 0.116 0.139 C 26 31 1.024 1.220 D 0.71 0.88 0.028 0.035 Ordering code Marking Package Weight Base qty Delivery mode STTH152 STTH152 DO-15 0.4 g 1000 Ammopack STTH152RL STTH152 DO-15 0.4 g 6000 Tape and reel White band indicates cathode Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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