上海双岭电子有限公司 CC4075 TRIPLE 3 INPUT OR GATE ■ ■ ■ ■ ■ ■ MEDIUM SPEED OPERATION : tPD = 60ns (TYP.) at VDD = 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B ” STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES” DESCRIPTION The CC4075 is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The CC4075 TRIPLE 3 INPUT OR GATE provides the system designer with direct DIP ORDER CODES PACKAGE DIP TUBE T&R CC4075 implementation of the positive logic OR function and supplement the existing family of CMOS gates. PIN CONNECTION 1/4 CC4075 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 13, 8, 12, 2, 11, 1, 10, 9, SYMBOL 5 4 3 6 NAME AND FUNCTION 7 G, A, D H, B, E I, C, F L, J, K VSS Data Data Data Data Inputs Inputs Inputs Outputs Negative Supply Voltage 14 VDD Positive Supply Voltage TRUTH TABLE INPUTS OUTPUTS G, A, D H, B, E I, C, F L, J , K L X X H X L X H X X L H L H H H X : Don’t Care ABSOLUTE MAXIMUM RATINGS Symbol V DD Parameter Supply Voltage Value Unit -0.5 to +22 V VI DC Input Voltage -0.5 to VDD + 0.5 V II DC Input Current ± 10 mA 200 100 mW mW Top Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature -55 to +125 °C Tstg Storage Temperature -65 to +150 °C PD Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol V DD 2/4 Parameter Supply Voltage VI Input Voltage Top Operating Temperature Value Unit 3 to 20 V 0 to VDD V -55 to 125 °C CC4075 DC SPECIFICATIONS Test Condition Symbol IL VOH VOL VIH VIL I OH IOL II CI Parameter Quiescent Current High Level Output Voltage Low Level Output Voltage VI (V) Output Sink Current Input Leakage Current Input Capacitance 0/5 0/5 0/10 0/15 0/5 0/10 0/15 0/18 TA = 25°C Min. 5 10 15 20 0/5 0/10 0/15 5/0 10/0 15/0 Low Level Input Voltage Output Drive Current |IO | VDD (µA) (V) VO (V) 0/5 0/10 0/15 0/20 High Level Input Voltage Value 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 Any Input Any Input 5 10 15 5 10 15 5 10 15 5 10 15 5 5 10 15 5 10 15 18 Typ. Max. 0.01 0.01 0.01 0.02 0.25 0.5 1 5 4.95 9.95 14.95 -40 to 85°C -55 to 125°C Min. Min. 7.5 15 30 150 4.95 9.95 14.95 0.05 0.05 0.05 4.95 9.95 14.95 3.5 7 11 1.5 3 4 -3.2 -1 -2.6 -6.8 1 2.6 6.8 ±0.1 5 7.5 0.05 0.05 0.05 1.5 3 4 V V 1.5 3 4 -1.1 -0.36 -0.9 -2.4 0.36 0.9 2.4 ±1 µA V 3.5 7 11 -1.15 -0.36 -0.9 -2.4 0.36 0.9 2.4 ±10-5 Max. 7.5 15 30 150 0.05 0.05 0.05 3.5 7 11 -1.36 -0.44 -1.1 -3.0 0.44 1.1 3.0 Max. Unit V mA mA ±1 µA pF The Noise Margin for both ”1” and ”0” level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns) Test Condition Symbol tPHL tPLH Parameter Propagation Delay Time Propagation Delay Time tTLH tTHL Output Transition Time VDD (V) Value (*) Min. Unit Typ. Max. 5 10 15 5 10 15 5 10 125 60 45 175 60 50 100 50 250 120 90 350 140 140 200 100 15 40 80 ns ns ns (*) Typical temperature coefficient for all VDD value is 0.3 %/°C. 3/4 CC4075 TEST CIRCUIT C L = 50pF or equivalent (includes jig and probe capacitance) R L = 200KΩ R T = ZOUT of pulse generator (typically 50Ω) WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) 4/4