CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO.,LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn A44 TRANSISTOR (NPN) TO-92 FEATURES y High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 1. EMITTER Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO 5 V IC Emitter-Base Voltage Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 Storage Temperature ℃ Tstg -55 to +150 ℃ 2. BASE 3. COLLECTOR 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA , IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=400 V, IE=0 Collector cut-off current ICEO VCE=400 V Emitter cut-off current IEBO VEB= 4V, IC=0 DC current gain Collector-emitter saturation voltage Base-emitter sataration voltage Transition frequency 0.1 μA 5 μA 0.1 μA hFE (1) VCE=10V , IC=10mA 80 300 hFE(2) VCE=10V, IC=1mA 70 hFE(3) VCE=10V, IC=100mA 40 hFE(4) VCE=10V, IC=50mA 80 VCE(sat) IC=10mA, IB=1mA 0.2 V VCE(sat) IC=50mA, IB=5mA 0.3 V VBE(sat) IC=10mA, IB= 1mA 0.75 V fT VCE=20V, IC=10mA f =30MHz 50 MHz CLASSIFICATION OF hFE(1) Rank Range A B1 B2 C 80-100 100-150 150-200 200-300