Product News

Power Modules
Next-Gen, 3-Level Inverter Power
Modules in flow0 Housing: Up with
Efficiency and Performance, Down
with Costs
nd
flowNPC 0 2 gen
Dimension: 33 x 66 x 12 mm³
Vincotech is pleased to announce the next generation of NPC modules in the
flow 0 housing. Featuring the latest semiconductor technology, they are the
modules of choice for highest-efficiency solar inverter applications.
Features:

3-level inverter topology designed for 1200 V applications

Wide range of products for different design goals:

Latest 600 V CoolMOS® C6 and 600 V SiC diodes technology for
highest efficiency and switching frequency
Highlights
 3-level inverter topology

Parallel switch configuration for highest performance at modest cost

Pure IGBT versions for high-performance inverters (with high-speed
 Latest semiconductor
IGBTs for buck conversion)
technology
 Products for every design,
from cost-efficient

600 V SiC or Stealth II diode for buck conversion

1200 V Stealth or FRED diode for booster conversion (reactive
power)
streamlined versions to
high-end, high-

Improved low-voltage ride-through capability (LVRT)
performance modules

Pins compatible with first-generation NPCs

Excellent price/performance ratio
 Compact design
 Low inductive, 12 mm
housing
Vincotech
GmbH

Biberger Straße 93
82008 Unterhaching
Germany
www.vincotech.com
Status: Feb-13
Power Modules
Part no.:
Voltage Current /
Rdson
Comment
10-FZ06NRA099FS01-P963F10
2x600 V
99 mΩ CoolMOS C6 + 600V Stealth II Diode
+ 1200V Stealth Diode
99 mΩ CoolMOS C6 + 600V SiC Diode +
1200V Stealth Diode
10-FZ06NRA099FS-P963F68
2x600 V
10-FZ06NRA041FS02-P965F68
2x600 V
10-FZ06NRA041FS03-P965F78
2x600 V
10-F007NRA050SG-P966F09
2x650 V
50 A
IGBT3 HS + 600V SiC Diode + 1200V
FRED
10-FZ06NRA060FU-P967F08
2x600 V
60 A
Fast Field Stop IGBT + 600V SiC
Diode + 1200V FRED
10-FZ06NRA069FP02-P967F68
2x600 V
69 A
CoolMOS C6 // Fast Field Stop IGBT
+ 600V SiC Diode + 1200V Stealth
10-FZ06NRA069FP03-P967F78
2x600 V
69 A
10-FZ06NRA075FU-P969F08
2x600 V
75 A
CoolMOS C6 // Fast Field Stop IGBT
+ 600V Stealth II Diode + 1200V
Stealth
Fast Field Stop IGBT + 600V Stealth
II Diode + 1200V Stealth
10-F006NPA070FP-P969F09
2x600 V
70 A
10-FZ06NRA084FP02-P969F68
2x600 V
84 A
10-FZ06NRA084FP03-P969F78
2x600 V
84 A
41 mΩ CoolMOS C6 + 600V SiC Diode +
1200V Stealth Diode
41 mΩ CoolMOS C6 + 600V Stealth II Diode
+ 1200V Stealth Diode
Fast Field Stop IGBT + 600V SiC
Diode + 1200V FRED
CoolMOS C6 // Fast Field Stop IGBT
+ 600V SiC Diode + 1200V Stealth
CoolMOS C6 // Fast Field Stop IGBT
+ 600V Stealth II Diode + 1200V
Stealth
Vincotech GmbH
Biberger Straße 93
82008 Unterhaching
Germany
www.vincotech.com
Status: Feb-13
Power Modules
Efficiency curve (10-FZ06NRA099FS-P963F68):
Tj=125°C; Vdclink=700v; =0°
Fsw=2 to 128kHz in steps of factor 2Tj=125°C; Vdclink=700V;
Benefits:

Efficiency exceeding 98.5% @ 50 kHz switching frequency

600 V components for 1200 V applications

Various semiconductor combinations for optimum design choices
These modules are also available with pre-applied thermal interface material,
a highly conductive, 3.4 W/K substance that simplifies assembly and further
improves thermal impedance. Modules can be provided with solder and
Press-fit pins and in a 17 mm housing on demand.
Samples and prices are available on request. These products will be
supported by Vincotech’s flowSOL simulator, which enables detailed loss
calculations. Datasheets can be found on the Vincotech website at:
http://www.vincotech.com/products/by-topologies.html?rpm_id=19#a43
Vincotech GmbH
Biberger Straße 93
82008 Unterhaching
Germany
If you wish to learn more about Vincotech's range of power modules,
please visit www.vincotech.com/Power_Modules
www.vincotech.com
Status: Feb-13