KG600A800~1200V Y38KAC 国标型-高频晶闸管(平板式) Chinese Type High Frequency Thyristors (Capsule Version) L iu j in g re ct i f ie r c o . , L t d . FEATURES 1). Interdigitated amplifying gates IT(AV) VDRM/VRRM 2). Fast turn-on and high di/dt tq 3). Low switching losses ITSM 4). Short turn-off time 5). Hermetic metal cases with ceramic insulators 704A 800~1200V 12~20μs 8.9KA TYPICAL APPLICATIONS 1). Inductive heating 2). Electronic welders 3). Self-commutated inverters 4). AC motor speed control 5). General power switching applications THE MAIN PARAMETERS SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(℃) IT(AV) Mean forward current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage 180° half sine wave 50Hz Double side cooled, Ths=55℃ VDRM&VRRM,tp=10ms VDSM&VRSM= VDRM&VRRM+100V IDRM IRRM Repetitive peak off-state current Repetitive peak reverse current VD= VDRM VR= VRRM 125 ITSM I2t VTO rT VTM dv/dt Surge on-state current I2T for fusing coordination Threshold voltage On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage 10ms half sine wave VR=0.6VRRM 125 di/dt Critical rate of rise of on-state current Irm trr Qrr Reverse recovery current Reverse recovery time Recovery charge tq Circuit commutated turn-off time IGT VGT IH VGD Rth(j-h) Fm Tstg Wt Size Gate trigger current Gate trigger voltage Holding current Non-trigger gate voltage Thermal resistance Junction to heatsink Mounting force Stored temperature Weight Package box size www.china-liujing.com Min VALUE Type UNIT 704 A 1200 V 40 mA 125 125 8.9 396 1.68 0.67 2.48 200 KA A2s*103 V mΩ V V/μs 125 1500 A/μs 50 A μs μC 12 20 μs 30 0.8 20 0.3 250 3.0 400 mA V mA V 0.035 ℃ /W 20 140 KN ℃ g mm 125 125 800 125 ITM=1200A, F=15KN VDM=0.67VDRM VDM= 67%VDRM to1500A, Gate pulse tr ≤0.5μs IGM=1.5A Max ITM=800A,tp=1000μs, di/dt=-20A/μs, VR=50V 125 ITM=700A,tp=1000μs, VR =50V dv/dt=30V/μs ,di/dt=-20A/μs 125 VA=12V, IA=1A 25 VDM=67%VDRM At 180°sine, double side cooled Clamping force 15KN 125 30 2.2 33 10 -40 270 95×95×50 1/3 KG600A800~1200V PERFORMANCE CURVES FIGURE Max. junction To heatsink Thermai Impedance Vs.Time Peak On-state Voltage<.$& Vs.Peak On-state Current Transient thermal impedance,e C/W Instantaneous on-state voltage,volts T J=125e C Instantaneous on-state current,amperes Time,seconds Fig.1 2 8.9 I t396-Vs.Time 8.9 Vs.Cycles Surge Current 450 400 Maximum I t(Kamps ,secs) 350 2 2 Total peak half-sine surge current,kA Fig.2 300 250 200 150 Cycles at 50Hz 100 1 Fig.4 Gate characteristic at 25e C junction temperature Gate Trigger Zone at varies temperature 9P$ PD[ PLQ -30e C -10e C 3*0 : V6SXOVH Gate voltage,VGTˈ V 10 Time,m.seconds Fig.3 Gate voltage,VGTˈ V 3*: 25e C 125e C Gate current,IGTˈA Fig.5 www.china-liujing.com Gate current,IGTˈmA Fig.6 2/3 KG600A800~1200V 26f0.5 OUTLINE E-mail: rectifi[email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. LIUJING reserves the right to change limits, test conditions and dimensions. 윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다. www.china-liujing.com 3/3