KP3500A1900~3000V Y89KPH 国标型-普通晶闸管(平板式) Chinese Type Phase Control Thyristors (Capsule Version) L iu j in g re ct i f ie r c o . , L t d . FEATURES 1). Center amplifying gate 2). Metal case with ceramic insulator 3). Low on-state and switching losses TYPICAL APPLICATIONS 1). AC controllers 2). DC and AC motor control 3). Controlled rectifiers IT(AV) VDRM/VRRM ITSM I2t 3835 A 1900-3000V 44 KA 9680 103A2S THE MAIN PARAMETERS SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(℃) 180 half sine wave 50Hz Ths=55℃ Double side cooled, Ths=64℃ 125 Mean on-state current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM,tp=10ms VDSM&VRSM= VDRM&VRRM+100V 125 IDRM IRRM Repetitive peak off-state current Repetitive peak reverse current VD= VDRM VR= VRRM 125 ITSM I2t VTO rT VTM dv/dt Surge on-state current I2T for fusing coordination 10ms half sine wave VR=0.6VRRM 125 di/dt Critical rate of rise of on-state current Irm trr Qrr IGT VGT IH VGD Reverse recovery current Reverse recovery time Recovery charge Gate trigger current Gate trigger voltage Holding current Non-trigger gate voltage Rth(j-h) Thermal resistance Junction to heatsink Fm Tstg Wt Size Mounting force Stored temperature Weight Package box size www.china-liujing.com VALUE Type O IT(AV) Threshold voltage On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Min 1900 Max UNIT 3835 3500 A 3000 V 250 mA 44 9680 0.99 0.11 KA ITM=5000A, F=78KN VDM=0.67VDRM 125 125 1.54 1000 A s*103 V mΩ V V/μs VDM= 67%VDRM to4000A, Gate pulse tr ≤0.5μs IGM=1.5A 125 250 A/μs 250 26 3250 300 3.0 300 A μs μC 0.009 ℃ /W 85 140 KN ℃ 125 ITM=2000A,tp=1000μs, di/dt=-20A/μs, VR=50V 125 VA=12V, IA=1A 25 VDM=67%VDRM 125 40 0.8 20 0.3 At 180°sine, double side cooled Clamping force 78KN 70 -40 1900 160×145×65 2 mA V mA V g mm 1/3 KP3500A1900~3000V PERFORMANCE CURVES FIGURE Max. junction To heatsink Thermai Impedance Vs.Time Peak On-state Voltage<.3+ Vs.Peak On-state Current Instantaneous on-state voltage,volts Transient thermal impedancee C/W T J=125e C Instantaneous on-state currant,amperes Fig.1 Max. Power Dissipation Vs.Mean On-state Current <.3+ Conduction Angle Conduction Angle IMean on-state currant,amperes <.3+ Max. Power Dissipation Vs.Mean On-state Current 360 Heatsink temperature,e C Conduction Angle <.3+ Max. heatsink Temperature Vs.Mean On-state Current 360 '& Fig.4 Max.on-state dissipation ,watts Mean on-state currant,amperes Fig.3 Conduction Angle '& Mean on-state currant,amperes Mean on-state currant,amperes Fig.5 Fig.6 2 44 Vs.Cycles Surge Current 9680 I t Vs.Time 44 10000 Maximum I2t(Kamps2,secs)S Total peak half-sine surge current,KA Cycles,@ 50Hz Fig.7 www.china-liujing.com Max. heatsink Temperature Y89KPH Vs.Mean On-state Current C Heatsink temperature,e Max.on-state dissipation ,watts Fig.2 Time,seconds 8000 6000 4000 2000 1 Time,m.seconds 10 Fig.8 2/3 KP3500A1900~3000V Gate Trigger Zone at varies temperature 90$ Gate characteristic at 25e C junction temperature 3*0 : VVSXOVH PD[ Gate voltage,VGTˈV Gate voltage,VGTˈV -30e C PLQ 3*: -10e C 25e C 125e C Gate current,IGTˈmA Gate current,IGT ˈA Fig.9 Fig.10 35 0.5 OUTLINE E-mail: rectifi[email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. LIUJING reserves the right to change limits, test conditions and dimensions. 윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다. www.china-liujing.com 3/3