KG800A800~1400V Y55KAD 国标型-高频晶闸管(平板式) Chinese Type High Frequency Thyristors (Capsule Version) L iu j in g re ct i f ie r c o . , L t d . FEATURES 1). Interdigitated amplifying gates IT(AV) VDRM/VRRM 2). Fast turn-on and high di/dt tq 3). Low switching losses ITSM 4). Short turn-off time 5). Hermetic metal cases with ceramic insulators 1261A 800~1200V 12~20μs 15KA TYPICAL APPLICATIONS 1). Inductive heating 2). Electronic welders 3). Self-commutated inverters 4). AC motor speed control 5). General power switching applications THE MAIN PARAMETERS SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(℃) IT(AV) Mean forward current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage 180° half sine wave 50Hz Double side cooled, Ths=55℃ VDRM&VRRM,tp=10ms VDSM&VRSM= VDRM&VRRM+100V IDRM IRRM Repetitive peak off-state current Repetitive peak reverse current VD= VDRM VR= VRRM 125 ITSM I2t VTO rT VTM dv/dt Surge on-state current I2T for fusing coordination Threshold voltage On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage 10ms half sine wave VR=0.6VRRM 125 di/dt Critical rate of rise of on-state current Irm trr Qrr Reverse recovery current Reverse recovery time Recovery charge tq Circuit commutated turn-off time IGT VGT IH VGD Rth(j-h) Fm Tstg Wt Size Gate trigger current Gate trigger voltage Holding current Non-trigger gate voltage Thermal resistance Junction to heatsink Mounting force Stored temperature Weight Package box size www.china-liujing.com Min VALUE Type UNIT 1108 A 1400 V 80 mA 125 125 16.3 1328 1.65 0.36 2.51 200 KA A2s*103 V mΩ V V/μs 125 1500 A/μs 100 A μs μC 20 28 μs 30 0.8 20 0.3 250 3.0 400 mA V mA V 0.024 ℃ /W 26 140 KN ℃ g mm 125 125 800 125 ITM=2400A, F=24KN VDM=0.67VDRM VDM= 67%VDRM to2000A, Gate pulse tr ≤0.5μs IGM=1.5A Max ITM=1000A,tp=1000μs, di/dt=-20A/μs, VR=50V 125 ITM=1000A,tp=1000μs, VR =50V dv/dt=30V/μs ,di/dt=-20A/μs 125 VA=12V, IA=1A 25 VDM=67%VDRM At 180°sine, double side cooled Clamping force 24KN 125 58 3.0 87 19 -40 470 95×95×50 1/3 KG800A800~1400V PERFORMANCE CURVES FIGURE Max. junction To heatsink Thermai Impedance Vs.Time Peak On-state Voltage<.$' Vs.Peak On-state Current Transient thermal impedance,e C/W Instantaneous on-state voltage,volts T J=125e C Instantaneous on-state current,amperes Time,seconds Fig.1 Fig.2 16.3 Vs.Cycles Surge Current 2 1328 16.3 I t Vs.Time 1400 1200 2 Maximum I t(Kamps ,secs) 1000 2 Total peak half-sine surge current,kA 800 600 Cycles at 50Hz 400 1 Fig.3 Fig.4 Gate Trigger Zone at varies temperature 3.09P$ PD[ 3*0 : V6SXOVH PLQ 25e C 125e C 3*: Gate current,IGT A Fig.5 www.china-liujing.com -30e C -10e C Gate voltage,VGT V Gate voltage,VGT V Gate characteristic at 25e C junction temperature 10 Time,m.seconds Gate current,IGT mA Fig.6 2/3 KG800A800~1400V 26f0.5 OUTLINE E-mail: rectifi[email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. LIUJING reserves the right to change limits, test conditions and dimensions. 윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다. www.china-liujing.com 3/3