LIUJING KG800A800

KG800A800~1400V
Y55KAD
国标型-高频晶闸管(平板式)
Chinese Type High Frequency Thyristors (Capsule Version)
L iu j in g re ct i f ie r c o . , L t d .
FEATURES
1). Interdigitated amplifying gates
IT(AV)
VDRM/VRRM
2). Fast turn-on and high di/dt
tq
3). Low switching losses
ITSM
4). Short turn-off time
5). Hermetic metal cases with ceramic insulators
1261A
800~1200V
12~20μs
15KA
TYPICAL APPLICATIONS
1). Inductive heating
2). Electronic welders
3). Self-commutated inverters
4). AC motor speed control
5). General power switching applications
THE MAIN PARAMETERS
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Tj(℃)
IT(AV)
Mean forward current
VDRM
VRRM
Repetitive peak off-state voltage
Repetitive peak reverse voltage
180° half sine wave 50Hz
Double side cooled, Ths=55℃
VDRM&VRRM,tp=10ms
VDSM&VRSM= VDRM&VRRM+100V
IDRM
IRRM
Repetitive peak off-state current
Repetitive peak reverse current
VD= VDRM
VR= VRRM
125
ITSM
I2t
VTO
rT
VTM
dv/dt
Surge on-state current
I2T for fusing coordination
Threshold voltage
On-state slop resistance
Peak on-state voltage
Critical rate of rise of off-state voltage
10ms half sine wave
VR=0.6VRRM
125
di/dt
Critical rate of rise of on-state current
Irm
trr
Qrr
Reverse recovery current
Reverse recovery time
Recovery charge
tq
Circuit commutated turn-off time
IGT
VGT
IH
VGD
Rth(j-h)
Fm
Tstg
Wt
Size
Gate trigger current
Gate trigger voltage
Holding current
Non-trigger gate voltage
Thermal resistance
Junction to heatsink
Mounting force
Stored temperature
Weight
Package box size
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Min
VALUE
Type
UNIT
1108
A
1400
V
80
mA
125
125
16.3
1328
1.65
0.36
2.51
200
KA
A2s*103
V
mΩ
V
V/μs
125
1500
A/μs
100
A
μs
μC
20
28
μs
30
0.8
20
0.3
250
3.0
400
mA
V
mA
V
0.024
℃ /W
26
140
KN
℃
g
mm
125
125
800
125
ITM=2400A, F=24KN
VDM=0.67VDRM
VDM= 67%VDRM to2000A,
Gate pulse tr ≤0.5μs IGM=1.5A
Max
ITM=1000A,tp=1000μs,
di/dt=-20A/μs,
VR=50V
125
ITM=1000A,tp=1000μs, VR =50V
dv/dt=30V/μs ,di/dt=-20A/μs
125
VA=12V, IA=1A
25
VDM=67%VDRM
At 180°sine, double side cooled
Clamping force 24KN
125
58
3.0
87
19
-40
470
95×95×50
1/3
KG800A800~1400V
PERFORMANCE CURVES FIGURE
Max. junction To heatsink
Thermai Impedance Vs.Time
Peak On-state Voltage<.$'
Vs.Peak On-state Current
Transient thermal impedance,e
C/W
Instantaneous on-state voltage,volts
T J=125e
C
Instantaneous on-state current,amperes
Time,seconds
Fig.1
Fig.2
16.3 Vs.Cycles
Surge Current
2
1328
16.3
I t Vs.Time
1400
1200
2
Maximum I t(Kamps ,secs)
1000
2
Total peak half-sine surge current,kA
800
600
Cycles at 50Hz
400
1
Fig.3
Fig.4
Gate Trigger Zone
at varies temperature
3.09P$
PD[
3*0 :
V6SXOVH
PLQ
25e
C
125e
C
3*:
Gate current,IGT A
Fig.5
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-30e
C
-10e
C
Gate voltage,VGT V
Gate voltage,VGT V
Gate characteristic at 25e
C junction temperature
10
Time,m.seconds
Gate current,IGT mA
Fig.6
2/3
KG800A800~1400V
26f0.5
OUTLINE
E-mail: rectifi[email protected]
YUEQING LIUJING RECTIFIER CO., LTD
Sale Departmant: Liujing Building, Yueqing City,
Zhejiang Province
Add: Wanao Industrial Zone, Yueqing city,
Zhejiang Province
Tel: 0086-577-62519692 0089-577-62519693
Fax: 0086-577-62518692
International Export: 0086-577-62571902
Technical Support: 0086-15868768965
After Service: 400-6606-086
http://www.china-liujing.com
http://www.liujingdianqi.cn
http://www.cnrectifier.com
http://www.cnthyristor.com.cn
MSN: [email protected]
[email protected]
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To be the most competitive Power Semiconductor
Devices manufactory.
LIUJING reserves the right to change limits, test conditions and dimensions.
윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다.
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