KK1500A800~1800V Y60KKE 国标型-快速晶闸管(平板式) Chinese Type Fast Thyristors (Capsule Version) L iu j in g re ct i f ie r c o . , L t d . FEATURES 1). Interdigitated amplifying gates 2). Fast turn-on and high di/dt 3). Low switching losses TYPICAL APPLICATIONS IT(AV) VDRM/VRRM tq ITSM I2t 1423A 800~1800V 24~50μs 18KA 1620 103A2S 1). Inductive heating 2). Electronic welders 3). Self-commutated inverters THE MAIN PARAMETERS SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(℃) IT(AV) Mean forward current 180° half sine wave 50Hz Double side cooled, Ths=55℃ 125 VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM,tp=10ms VDSM&VRSM= VDRM&VRRM+100V 125 IDRM IRRM Repetitive peak off-state current Repetitive peak reverse current VD= VDRM VR= VRRM 125 ITSM I2t VTO rT VTM dv/dt Surge on-state current I2T for fusing coordination Threshold voltage On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage 10ms half sine wave VR=0.6VRRM 125 di/dt Critical rate of rise of on-state current Irm trr Qrr Reverse recovery current Reverse recovery time Recovery charge tq Circuit commutated turn-off time IGT VGT IH VGD Rth(j-h) Fm Tstg Wt Outline Gate trigger current Gate trigger voltage Holding current Non-trigger gate voltage Thermal resistance Junction to heatsink Mounting force Stored temperature Weight Package box size www.china-liujing.com Min VALUE Type 800 Max UNIT 1423 A 1800 V 120 mA KA A2s*103 V mΩ V V/μs ITM=3000A, F=28KN VDM=0.67VDRM 125 125 18 1620 1.40 0.28 2.32 500 VDM= 67%VDRM to2500A, Gate pulse tr ≤0.5μs IGM=1.5A 125 1200 A/μs ITM=1500A,tp=1000μs, di/dt=-20A/μs, VR=50V 125 400 A μs μC ITM=1500A,tp=1000μs, VR =50V dv/dt=30V/μs ,di/dt=-20A/μs 125 24 50 μs VA=12V, IA=1A 25 VDM=67%VDRM 300 3.5 500 125 40 0.9 20 0.3 mA V mA V 0.020 ℃ /W 30 140 KN ℃ g 125 107 6.5 349 At 180°sine, double side cooled Clamping force 28KN 21 -40 650 160×145×65 1/3 KK1500A800~1800V PERFORMANCE CURVES FIGURE Max. junction To heatsink Thermai Impedance Vs.Time Peak On-state Voltage<..( Vs.Peak On-state Current Instantaneous on-state voltage,volts Transient thermal impedance,e C/W T J=125e C Instantaneous on-state current,amperes Time,seconds Fig.1 Fig.2 2 18 Surge Current Vs.Cycles 18 I1620 t Vs.Time 1800 Total peak half-sine surge current,kA 1600 Maximum I t(Kamps ,secs) 1400 2 2 1200 1000 800 600 Cycles at 50Hz 400 1 Fig.3 Fig.4 Gate characteristic at 25e C junction temperature PD[ PLQ 25e C 125e C 3*: Gate current,IGT A Fig.5 www.china-liujing.com -30e C -10e C 3*0 : VVSXOVH Gate voltage,VGT V Gate voltage,VGT V Gate Trigger Zone at varies temperature 3.590$ 10 Time,m.seconds Gate current,IGT mA Fig.6 2/3 KK1500A800~1800V 26f0.5 OUTLINE E-mail: rectifi[email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. LIUJING reserves the right to change limits, test conditions and dimensions. 윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다. www.china-liujing.com 3/3