KK500A800~1800V Y38KKE 国标型-快速晶闸管(平板式) Chinese Type Fast Thyristors (Capsule Version) L iu j in g re ct i f ie r c o . , L t d . FEATURES 1). Interdigitated amplifying gates 2). Fast turn-on and high di/dt 3). Low switching losses TYPICAL APPLICATIONS IT(AV) VDRM/VRRM tq ITSM I2t 822A 800~1800V 24~50μs 9.0KA 405 103A2S 1). Inductive heating 2). Electronic welders 3). Self-commutated inverters THE MAIN PARAMETERS SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(℃) IT(AV) Mean forward current 180° half sine wave 50Hz Double side cooled, Ths=55℃ 125 VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM,tp=10ms VDSM&VRSM= VDRM&VRRM+100V 125 IDRM IRRM Repetitive peak off-state current Repetitive peak reverse current VD= VDRM VR= VRRM 125 ITSM I2t VTO rT VTM dv/dt Surge on-state current I2T for fusing coordination Threshold voltage On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage 10ms half sine wave VR=0.6VRRM 125 di/dt Critical rate of rise of on-state current Irm trr Qrr Reverse recovery current Reverse recovery time Recovery charge tq Circuit commutated turn-off time IGT VGT IH VGD Rth(j-h) Fm Tstg Wt Size Gate trigger current Gate trigger voltage Holding current Non-trigger gate voltage Thermal resistance Junction to heatsink Mounting force Stored temperature Weight Package box size www.china-liujing.com Min VALUE Type 800 Max UNIT 822 A 1800 V 40 mA KA A2s*103 V mΩ V V/μs ITM=1400A, F=15KN VDM=0.67VDRM 125 125 9.0 405 1.36 0.53 2.10 500 VDM= 67%VDRM to1000A, Gate pulse tr ≤0.5μs IGM=1.5A 125 1200 A/μs ITM=800A,tp=1000μs, di/dt=-20A/μs, VR=50V 125 160 A μs μC ITM=800A,tp=1000μs, VR =50V dv/dt=30V/μs ,di/dt=-20A/μs 125 24 50 μs VA=12V, IA=1A 25 VDM=67%VDRM 250 2.5 400 125 40 0.9 20 0.3 mA V mA V 0.035 ℃ /W 20 140 KN ℃ g mm 125 69 4.3 149 At 180°sine, double side cooled Clamping force 15KN 10 -40 270 95×95×50 1/3 KK500A800~1800V PERFORMANCE CURVES FIGURE Max. junction To heatsink Thermai Impedance Vs.Time Peak On-state Voltage<..( Vs.Peak On-state Current Transient thermal impedance,e C/W Instantaneous on-state voltage,volts T J=125e C Instantaneous on-state current,amperes Time,seconds Fig.1 2 450 400 Maximum I t(Kamps ,secs) 9 I t 405-Vs.Time 350 2 2 Total peak half-sine surge current,kA Fig.2 9 Surge Current Vs.Cycles 300 250 200 150 100 1 10 Cycles at 50Hz Time,m.seconds Fig.3 Fig.4 Gate characteristic at 25e C junction temperature Gate Trigger Zone at varies temperature 90$ PGM=100W (100嘕 s spulse PD[ Gate voltage,VGTˈV Gate voltageVGT ,V PLQ 25e C -30e C -10e C 125e C 3*: Gate curren,IGT,A Fig.5 www.china-liujing.com Gate curren,IGTˈmA Fig.6 2/3 KK500A800~1800V 26f0.5 OUTLINE E-mail: rectifi[email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. LIUJING reserves the right to change limits, test conditions and dimensions. 윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다. www.china-liujing.com 3/3