KP800A400~1000V Y40KPC 国标型-普通晶闸管(平板式) Chinese Type Phase Control Thyristors (Capsule Version) L iu j in g re ct i f ie r c o . , L t d . FEATURES 1). Center amplifying gate 2). Metal case with ceramic insulator 3). Low on-state and switching losses TYPICAL APPLICATIONS 1). AC controllers 2). DC and AC motor control 3). Controlled rectifiers IT(AV) VDRM/VRRM ITSM I2t 1240A 400~1000 V 15 KA 1125 103A2S THE MAIN PARAMETERS SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(℃) 180 half sine wave 50Hz Ths=55℃ Double side cooled, Ths=88℃ 125 O IT(AV) Mean on-state current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM,tp=10ms VDSM&VRSM= VDRM&VRRM+100V 125 IDRM IRRM Repetitive peak off-state current Repetitive peak reverse current VD= VDRM VR= VRRM 125 ITSM I2t VTO rT VTM dv/dt Surge on-state current I2T for fusing coordination 10ms half sine wave VR=0.6VRRM 125 di/dt Critical rate of rise of on-state current Irm trr Qrr IGT VGT IH VGD Threshold voltage On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Reverse recovery current Reverse recovery time Recovery charge Gate trigger current Gate trigger voltage Holding current Non-trigger gate voltage Rth(j-h) Thermal resistance Junction to heatsink Fm Tstg Wt Size Mounting force Stored temperature Weight Package box size www.china-liujing.com Min VALUE Type 400 Max 1240 800 A 1000 V 50 mA ITM=2400A, F=18KN VDM=0.67VDRM 125 125 15 1125 0.85 0.30 1.57 1000 VDM= 67%VDRM to1500A, Gate pulse tr ≤0.5μs IGM=1.5A 125 500 125 ITM=1000A,tp=1000μs, di/dt=-20A/μs, VR=50V 25 VDM=0.67VDRM 125 35 0.8 20 0.3 At 180°sine, double side cooled Clamping force 18KN 15 -40 300 95×95×50 KA 2 A s*103 V mΩ V V/μs A/μs A μs μC 125 VA=12V, IA=1A UNIT 300 2.5 250 mA V mA V 0.032 ℃ /W 20 140 KN ℃ g mm 1/3 KP800A400~1000V PERFORMANCE CURVES FIGURE Max. junction To heatsink Thermai Impedance Vs.Time Peak On-state Voltage<.3& Vs.Peak On-state Current Instantaneous on-state voltage,volts Transient thermal impedancee C/W T J=125e C Instantaneous on-state currant,amperes Time,seconds Fig.1 Fig.2 <.3& Max. Power Dissipation Vs.Mean On-state Current Y40KPC 62 On-state Current Max. heatsink Temperature Vs.Mean Conduction Angle Conduction Angle Instantaneous on-state currant,amperes Max. heatsink Temperature Vs.Mean <.3& On-state Current '& 360 Heatsink temperature,e C Conduction Angle 360 Fig.4 Max. Power Dissipation Vs.Mean On-state Current Instantaneous on-state currant,amperes Fig.3 Max.on-state dissipation ,watts Heatsink temperature,e C Max.on-state dissipation ,watts Conduction Angle '& Fig.5 Fig.6 2 Surge Current 15 Vs.Cycles Instantaneous on-state currant,amperes Instantaneous on-state currant,amperes I1125---15 t Vs.Time 1200 Maximum I2t(Kamps2,secs) Total peak half-sine surge current,kA Cycles at 50Hz Fig.7 www.china-liujing.com 1000 800 600 400 200 1 Time,m.seconds 10 Fig.8 2/3 KP800A400~1000V Gate characteristic at 25e C junction temperature Gate Trigger Zone at varies temperature 90$ PD[ 3*0 : VVSXOVH Gate voltage,VGTˈV Gate voltage,VGTˈV -30e C -10e C 25e C PLQ 125e C 3*: Gate current,IGTˈA Fig.9 Gate curren,IGTˈmA Fig.10 26f0.5 OUTLINE E-mail: rectifi[email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. LIUJING reserves the right to change limits, test conditions and dimensions. 윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다. www.china-liujing.com 3/3