16V Low Cost, High Performance CMOS Rail-to-Rail Operational Amplifiers Preliminary Technical Data AD8661/AD8662/AD8664 a FEATURES Low Offset Voltage: 75 µV max Low Input Bias Currents 1pA Max Single-Supply Operation: 5 to 16 Volts Dual-Supply Operation: +/- 2.5 to +/-8 Volts Low Noise: 10 nV/√Hz Wide Bandwidth: 4 MHz Unity Gain Stable APPLICATIONS Multi-pole Filters Sensors Medical Equipment Consumer Audio Photodiode amplification ADC driver GENERAL DESCRIPTION The AD8661, AD8662 and AD8664 are single, dual and quad rail-to-rail output single supply amplifiers that use Analog Devices’ patented DigiTrim® trimming technique to achieve low offset voltage. The AD8661 family features an extended operating range with supply voltages up to 16 V. They also feature low input bias currents, wide signal bandwidth, and low input voltage and current noise. The combination of low offsets, very low input bias currents, and wide supply range make these amplifiers useful in a wide variety of applications normally associated with much higher priced JFET amplifiers. Systems utilizing high impedance sensors, such as photo-diodes benefit from the combination of low input bias current, low noise, low offset and bandwidth. The wide operating voltage range matches today’s high performance ADCs and DACs. Audio applications and medical monitoring equipment can take advantage of the high input impedance, low voltage and current noise, wide bandwidth and the lack of “popcorn” noise (found in many other low input bias current amplifiers). The AD8661, AD8662 and AD8664 are specified over the extended industrial (-40° to +125°C) temperature range. The AD8661, single, is available in the tiny 8-lead LFCSP (MO220) 3mm x 3mm and 8-lead SOIC package. The AD8662, dual, is available in the 8-lead micro-SOIC and narrow SOIC surface mount packages. The AD8664, quad, is available in 14-lead TSSOP and narrow 14-pin SOIC packages. LFCSP, MSOP and TSSOP versions are available in tape and reel only. PIN CONFIGURATIONS 8-Lead LFCSP (CP-8) 3mm x 3mm 8-Lead MSOP (RM-8) AD8662 8-Lead SO (R-8) AD8661 8-Lead SO (R-8) AD8662 14-Lead TSSOP (RU-14) AD8664 14-Lead SO (R-14) AD8664 REV. PrA 10/5/2004 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2004 Analog Devices, Inc. All rights reserved. AD8661/AD8662/AD8664 Preliminary Technical Data ELECTRICAL CHARACTERISTICS (VS=+5.0V, VCM = VS/2, TA=+25°C unless otherwise noted) Parameter Symbol Conditions Min INPUT CHARACTERISTICS Offset Voltage VOS VSY = 8V, VCM = 3V VCM = 0.1V to 3.0V -40°< TA < +85°C Typ µV 300 650 µV µV 750 µV 0.3 1 50 300 pA pA pA 0.2 TBD 20 75 3.0 pA pA pA V dB 30 IB -40°< TA < +85°C -40°< TA < +125°C Input Offset Current IOS -40°< TA < +85°C -40°< TA < +125°C Input Voltage Range Common-Mode Rejection Ratio CMRR VCM = 0.1V to 3.0V tbd 80 95 Large Signal Voltage Gain AVO RL = 10 kΩ VO= 0.5V to 4.5V 70 100 Offset Voltage Drift ∆VOS/∆T OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1mA IL = 10mA -40°C < TA < +125°C VOL VOL IL = 1mA IL = 1mA -40°C < TA < +125°C Output Voltage Low 3 Output Current IOUT Closed Loop Output Impedance ZOUT f=1 MHz, AV = 1 POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier PSRR ISY VS = 5 V to 16 V VO = 0V -40°< TA < +125°C DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin 4.80 4.80 4.75 V/mV 10 4.85 4.85 60 60 80 Units 75 -40°< TA < +125°C Input Bias Current Max µV/°C V V V ±19 mV mV mV mA 65 Ω 95 1.2 120 120 150 1.8 2.0 dB mA mA SR RL =10 kΩ 3 V/µs ts GBP Øo degrees To 0.1%, 0 V to 1V step <1 4 µs MHz CL = 15 pF 60 NOISE PERFORMANCE Peak-to-Peak Noise Voltage Noise Density en p-p en f=0.1Hz to 10 Hz 2.5 f=1kHz 12 µV p-p nV/√Hz Voltage Noise Density en f=10kHz 10 nV/√Hz Current Noise Density in f=1kHz 0.1 pA/√Hz -2- Rev PrA 10/5/04 AD8661/AD8662/AD8664 Preliminary Technical Data ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions INPUT CHARACTERISTICS Offset Voltage VOS VSY = 8V, VCM = 3V (VS=±8.0V, VCM = 0, TA=+25°C unless otherwise noted) Min VCM = -8.1V to +6.0V -40°< TA < +85°C Typ Max 75 µV 30 300 650 µV µV 750 µV 0.3 1 50 300 pA pA pA 0.2 TBD 20 75 6 pA pA pA V dB V/mV 10 µV/°C -40°< TA < +125°C Input Bias Current IB -40°< TA < +85°C -40°< TA < +125°C Input Offset Current IOS -40°< TA < +85°C -40°< TA < +125°C Input Voltage Range Common-Mode Rejection Ratio Large Signal Voltage Gain CMRR AVO Offset Voltage Drift ∆VOS/∆T OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1mA IL = 10mA -40°C < TA < +125°C Output Voltage Low VOL IL = 1mA IL = 10mA -40°C < TA < +125°C VCM = -8.1V to +6.0V RL=10 kΩ VO= -7.5V to+7.5V 95 85 3 7.90 7.6 7.4 7.95 7.7 -7.97 -7.8 V V V -7.93 -7.7 -7.5 ±140 Output Current IOUT Closed Loop Output Impedance ZOUT f=1 MHz, AV = 1 POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier PSRR ISY VS = 5V to 16V VO = 0V -40°< TA < +125°C DYNAMIC PERFORMANCE Slew Rate tbd 80 70 95 1.5 mV mV mV mA Ω 45 80 Units 1.8 2.0 dB mA mA SR RL =10 kΩ 3 V/µs Settling Time Gain Bandwidth Product Phase Margin NOISE PERFORMANCE Peak-to-Peak Noise Voltage Noise Density ts GBP Øo To 0.1%, 0 V to 1V step CL = 15 pF <1 4 60 µs MHz degrees en p-p en f=0.1Hz to 10 Hz 2.5 f=1kHz 12 µV p-p nV/√Hz Voltage Noise Density en f=10kHz 10 nV/√Hz Current Noise Density in f=1kHz 0.1 pA/√Hz -3- Rev PrA 10/5/04 AD8661/AD8662/AD8664 Preliminary Technical Data ABSOLUTE MAXIMUM RATINGS1 Supply voltage .........................................................................+18V Input Voltage ....................................................................Gnd to Vs Differential Input Voltage .......................................................±18V Output Short-Circuit Duration to Gnd2.....Observe Derating Curves Storage Temperature Range R, CP, RM, RU Package................................-65°C to +150°C Operating Temperature Range AD8661/AD8662/AD8664 ............................-40°C to +125°C Junction Temperature Range R, CP, RM, RU Package................................-65°C to +150°C Lead Temperature Range (Soldering, 60 Sec)............. +300°C Package Type θJA θJC Units 8-Pin LFCSP (CP) 8-Pin microSOIC (RM) 8-Pin SOIC (R) 210 158 -45 43 °C/W °C/W °C/W 14-Pin SOIC (R) 120 36 °C/W 14-Pin TSSOP (RU) 180 35 °C/W NOTES 1 Absolute maximum ratings apply at 25°C, unless otherwise noted. 2 θ is specified for the worst-case conditions, i.e., θ is specified for device soldered JA JA in circuit board for surface mount packages. ORDERING GUIDE Model AD8661ACP AD8661ARZ AD8662ARMZ AD8662ARZ AD8664ARZ AD8664ARUZ Temperature Range -40°C to +125°C -40°C to +125°C -40°C to +125°C -40°C to +125°C -40°C to +125°C -40°C to +125°C Package Description 8-Pin LFCSP 8-Pin SOIC 8-Pin micro-SOIC 8-Pin SOIC 14-Pin SOIC 14-Pin TSSOP Package Option CP-8 R-8 RM-8 R-8 R-14 RU-14 Branding Information CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 1500 V readily accumulate on the human body and test equipment and can discharge without detection. Although this device features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. -4- Rev PrA 10/5/04 AD8661/AD8662/AD8664 Preliminary Technical Data OUTLINE DIMENSIONS 8-Lead SOIC (RM-8) 14-Lead TSSOP (RU-14) 8-Lead SO (R-8) PR05200-0-10/04(PRA) 8-Lead LFCSP (CP-8 Suffix) 14-Lead SO (R-14) -5- Rev PrA 10/5/04