HUR2x60-100, HUR2x60-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227(ISOTOP) HUR2x60-100 HUR2x60-120 VRSM V 1000 1200 Symbol VRRM V 1000 1200 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 Maximum Ratings Unit IFRMS IFAVM TC=80oC; rectangular, d=0.5 100 60 A IFSM TVJ=45oC; tp=10ms (50Hz), sine 800 A 28 mJ 1.6 A EAS IAR o TVJ=25 C; non-repetitive; IAS=16A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot VISOL Md Weight o C TC=25oC 200 W 50/60Hz, RMS _ IISOL<1mA 2500 V~ 1.1-1.5/9-13 1.1-1.5/9-13 Nm/lb.in. 30 g mounting torque (M4) terminal connection torque (M4) typical HUR2x60-100, HUR2x60-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol Test Conditions IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM VF IF=60A; TVJ=125oC TVJ=25oC Characteristic Values typ. max. RthJC RthCH trr IRM 1 4 mA 1.70 2.42 V 0.6 0.1 IF=1A; -di/dt=400A/us; VR=30V; TVJ=25oC o VR=100V; IF=200A; -diF/dt=100A/us; TVJ=100 C Unit K/W 40 ns 8 A FEATURES APPLICATIONS ADVANTAGES * International standard package miniBLOC * Isolation voltage 2500 V~ * 2 independent FRED in 1 package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR2x60-100, HUR2x60-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 15.0 100 120 TVJ= 100°C VR = 600V C A A 12.5 Qr 80 IF TVJ=150°C TVJ=100°C 60 IRM 10.0 TVJ= 25°C 80 IF= 120A IF= 60A IF= 30A IF= 120A IF= 60A IF= 30A 7.5 40 5.0 20 TVJ= 100°C VR = 600V 40 2.5 0 0 1 2 VF V 0.0 100 3 Fig. 1 Forward current IF versus VF 0 A/us 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 300 trr 1.5 200 400 600 A/us 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 60 TVJ= 100°C VR = 600V ns 0 1.2 V 280 VFR Kf us VFR tfr tfr 40 0.8 20 0.4 260 1.0 IRM IF= 120A IF= 60A IF= 30A 240 0.5 220 Qr 0.0 200 0 40 80 120 °C 160 0 0 200 TVJ 400 600 800 1000 A/us 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 1 0.0 600 A/us 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 4 ZthJC 0.01 0.001 0.0001 0.00001 TVJ= 100°C IF = 60A 0.0001 0.001 0.01 0.1 s 1 t Fig. 7 Transient thermal resistance junction to case 10 Rthi (K/W) ti (s) 0.212 0.248 0.063 0.077 0.0055 0.0092 0.0007 0.0391