DSEP 30-04A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 400 V trr = 30 ns with soft recovery Preliminary Data VRSM VRRM V V 400 400 Type A C TO-247 AD C DSEP 30-04A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 140°C; rectangular, d = 0.5 70 30 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine tbd A EAS TVJ = 25°C; non-repetitive IAS = tbd A; L = tbd µH tbd mJ VA = 1.5·VR typ.; f = 10 kHz; repetitive tbd A -55...+175 175 -55...+150 °C °C °C 165 W Features ● ● ● IAR TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical 0.8...1.2 6 Nm g ● ● ● ● Applications ● ● Symbol IR ① VF ② Conditions Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 250 1 mA mA IF = 30 A; 1.11 1.46 V V 0.9 K/W K/W TVJ = 150°C TVJ = 25°C RthJC RthCH 0.25 trr IF = 1 A; -di/dt = 300 A/ms; VR = 30 V; TVJ = 25°C 30 IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms TVJ = 100°C 5.5 ns ● ● ● ● ● ● A ● ● Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 ms, Duty Cycle < 2.0 % Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● 6.8 International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 008 Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSEP 30-04A 70 A 60 1600 50 TVJ= 100°C VR = 200V nC IRM 1200 IF 50 40 Qr TVJ=150°C TVJ=100°C TVJ= 25°C 40 TVJ= 100°C VR = 200V A 800 30 20 30 IF= 60A IF= 30A IF= 15A IF= 60A IF= 30A IF= 15A 20 400 10 10 0 0.0 0.5 1.0 1.5 V 2.0 VF Fig. 1 Forward current IF versus VF 2.0 0 100 Fig. 2 Reverse recovery charge Qr versus -diF/dt 90 200 400 ms 1000 600 A/ 800 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 0.6 TVJ= 100°C IF = 30A V trr 80 VFR IF= 60A IF= 30A IF= 15A Kf 1.0 0 15 TVJ= 100°C VR = 200V ns 1.5 0 A/ms 1000 -diF/dt µs tfr tfr 10 0.4 VFR 70 IRM 5 0.5 0.2 60 Qr 0.0 50 0 40 80 120 °C 160 0 TVJ 200 400 800 A/ ms 1000 600 0 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 1 0.0 ms 1000 600 A/ 800 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0396 0.01 0.001 0.00001 DSEP 30-04A / DSEC 60-04A 0.0001 0.001 0.01 s 0.1 1 t NOTE: Fig. 2 to Fig. 6 shows typical values © 2000 IXYS All rights reserved 008 Fig. 7 Transient thermal resistance junction to case 2-2