DSEC 30-03A HiPerFREDTM Epitaxial Diode IFAV = 2x 15 A VRRM = 300 V trr = 30 ns with common cathode and soft recovery VRSM VRRM V V 300 300 TO-247 AD Type DSEC 30-03A A C A C A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 140°C; rectangular, d = 0.5 IFSM EAS 50 15 A A TVJ = 45°C; tp = 10 ms (50 Hz), sine 110 A TVJ = 25°C; non-repetitive IAS = 2.5 A; L = 180 µH 0.8 mJ VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.3 A -55...+175 175 -55...+150 °C °C °C 95 W Features ● ● ● IAR TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical 0.8...1.2 6 Nm g ● ● ● ● Applications ● ● Symbol IR ① VF ② Conditions Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 100 0.5 mA mA IF = 15 A; 1.20 1.67 V V 1.6 K/W K/W TVJ = 150°C TVJ = 25°C RthJC RthCH 0.25 trr IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 25 A; -diF/dt = 100 A/ms TVJ = 100°C 30 ns ● ● ● ● ● ● A ● ● Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 ms, Duty Cycle < 2.0 % Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● 2.7 International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 008 Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSEC 30-03A 40 500 20 TVJ = 100°C nC A VR = 150V 400 30 IF TVJ = 100°C A VR = 150V Qr TVJ=150°C IF = 30A 15 IF = 15A IF = 30A 300 TVJ=100°C 20 IRM IF = 7.5A IF = 15A TVJ= 25°C 10 IF = 7.5A 200 10 5 100 0 0 V 1 0 100 2 A/ms 1000 -diF/dt VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr 1.4 80 trr 1.2 0 70 IF = 30A 0.85 TVJ = 100°C µs IF = 15A 0.80 tfr tfr VFR 10 IF = 15A 1.0 ms 1000 600 A/ 800 -diF/dt Fig. 3 Peak reverse current IRM 12 VFR 60 400 V VR = 150V Kf 200 14 TVJ = 100°C ns 0 0.75 IF = 7.5A IRM 50 8 0.70 40 6 0.65 Qr 0.8 0.6 30 0 40 80 120 °C 160 0 TVJ 200 400 800 A/ ms 1000 600 4 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM Fig. 5 Recovery time trr versus -diF/dt 10 0.60 ms 1000 600 A/ 800 diF/dt Fig. 6 Peak forward voltage VFR and tfr Constants for ZthJC calculation: K/W i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 0.851 0.328 0.421 0.005 0.0003 0.041 0.1 0.01 0.001 0.00001 DSEC 30-03A 0.0001 0.001 0.01 s 0.1 1 t NOTE: Fig. 2 to Fig. 6 shows typical values © 2000 IXYS All rights reserved 008 Fig. 7 Transient thermal resistance junction to case 2-2