SUR2x100-12 Ultra Fast Recovery Epitaxial Diodes Dimensions SOT-227(ISOTOP) SUR2x100-12 VRSM V 1200 Symbol IFRMS IFAVM IFRM IFSM Test Conditions VISOL Md Weight Inches Min. Max. 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 Unit TVJ=TVJM TC=50oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 130 91 TBD A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 900 970 810 870 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 4100 4000 3300 3200 A2s TVJ=150oC TVJ=150oC -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot Millimeter Min. Max. A B Maximum Ratings TVJ=45oC I2t VRRM V 1200 Dim. o C TC=25oC 250 W 50/60Hz, RMS _ IISOL<1mA 2500 V~ Mounting torque Terminal connection torque (M4) 1.5/13 1.5/13 Nm/lb.in. 30 g SUR2x100-12 Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM 3 1.5 15 mA VF IF=100A; TVJ=150oC TVJ=25oC 1.61 1.87 V VTO For power-loss calculations only 1.01 V 6.1 rT RthJC RthCK trr IRM 0.5 0.05 IF=1A; -di/dt=400A/us; VR=30V; TVJ=25oC o _ VR=100V; IF=75A; -diF/dt=200A/us; L<0.05mH; TVJ=100 C m K/W 40 60 ns 24 30 A FEATURES APPLICATIONS ADVANTAGES * International standard package miniBLOC (ISOTOP compatible) * Isolation voltage 2500 V~ * Matched diodes f. parallel operation * Planar passivatd chips * Two independent diodes * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR2x100-12 Ultra Fast Recovery Epitaxial Diodes 16 T = 100°C C VVJ= 600V 14 R 150 A 125 IF 140 TVJ= 100°C A VR =600V 120 IRM Qr 12 100 100 10 IF=200A IF=100A IF= 50A TVJ=150°C 8 75 TVJ=100°C 80 6 50 TVJ= 25°C 40 4 25 20 2 0 0.0 0.5 IF=200A IF=100A IF= 50A 60 1.5 V VF 1.0 0 100 2.0 Fig. 1 Forward current IF versus VF 0 A/us 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 500 1.4 450 1.2 50 VFR 400 40 350 30 IRM IF=200A IF=100A IF= 50A 300 1.5 us tfr 1.0 tfr 0.8 VFR 20 0.5 Qr 0.6 250 0.4 10 200 0 40 80 120 °C 160 0 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 600 A/us 800 1000 -diF/dt Fig. 5 Recovery time trr versus -diF/dt 1 K/W 0 200 400 600 800 diF/dt 0.0 1000 A/us Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 5 D=0.7 0.5 0.3 0.2 0.1 0.1 600 A/us 800 1000 -diF/dt TVJ= 100°C IF = 100A 1.0 ZthJC 400 Fig. 3 Peak reverse current IRM versus -diF/dt V trr Kf 200 60 TVJ= 100°C VR = 600V ns 0 0.05 Single Pulse 0.05 0.001 0.01 0.1 1s 10 t Fig. 7 Transient thermal impedance junction to case at various duty cycles Rthi (K/W) ti (s) 0.02 0.05 0.076 0.24 0.114 0.00002 0.00081 0.01 0.94 0.45