MC74VHC1G132 2−Input NAND Schmitt−Trigger http://onsemi.com MARKING DIAGRAMS 5 5 1 SC−88A/SOT−353/SC−70 DF SUFFIX CASE 419A M The MC74VHC1G132 is a single gate CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The MC74VHC1G132 input structure provides protection when voltages up to 7.0 V are applied, regardless of the supply voltage. This allows the MC74VHC1G132 to be used to interface 5.0 V circuits to 3.0 V circuits. The MC74VHC1G132 can be used to enhance noise immunity or to square up slowly changing waveforms. 1 Features • • • • • • • VD M G G 5 High Speed: tPD = 3.6 ns (Typ) at VCC = 5.0 V Low Power Dissipation: ICC = 1.0 mA (Max) at TA = 25°C Power Down Protection Provided on Inputs Balanced Propagation Delays Pin and Function Compatible with Other Standard Logic Families Chip Complexity: FETs = 68; Equivalent Gates = 16 Pb−Free Packages are Available IN B 1 IN A 2 5 VD AYW G G 5 1 TSOP−5/SOT−23/SC−59 DT SUFFIX CASE 483 1 VD = Device Code M = Date Code* A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. VCC PIN ASSIGNMENT GND 1 4 3 OUT Y IN B 2 IN A 3 GND 4 OUT Y 5 VCC Figure 1. Pinout (Top View) FUNCTION TABLE Inputs IN A IN B & OUT Y Figure 2. Logic Symbol Output A B Y L L H H L H L H H H H L ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 17 1 Publication Order Number: MC74VHC1G132/D MC74VHC1G132 MAXIMUM RATINGS Symbol Parameter VCC DC Supply Voltage VIN DC Input Voltage VOUT DC Output Voltage IIK DC Input Diode Current IOK DC Output Diode Current IOUT DC Output Sink Current ICC DC Supply Current per Supply Pin TSTG Storage Temperature Range TL Lead Temperature, 1 mm from Case for 10 Seconds TJ Junction Temperature Under Bias qJA Thermal Resistance PD Power Dissipation in Still Air at 85°C MSL Moisture Sensitivity FR Flammability Rating VESD Latchup Performance Unit V −0.5 to +7.0 V *0.5 to VCC )0.5 V −20 mA $20 mA $12.5 mA $25 mA *65 to )150 °C 260 °C )150 °C SC70−5/SC−88A (Note 1) TSOP−5 350 230 °C/W SC70−5/SC−88A TSOP−5 150 200 mW Level 1 Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) u2000 u200 N/A V Above VCC and Below GND at 125°C (Note 5) $500 mA ESD Withstand Voltage ILATCHUP Value *0.5 to )7.0 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Min Max Unit VCC DC Supply Voltage 2.0 5.5 V VIN DC Input Voltage 0.0 5.5 V DC Output Voltage 0.0 VCC V Operating Temperature Range VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V Time, Hours Time, Years 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 )125 °C − − No Limit No Limit ns/V TJ = 80° C Junction Temperature °C *55 FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 110° C Device Junction Temperature versus Time to 0.1% Bond Failures TJ = 120° C NORMALIZED FAILURE RATE Input Rise and Fall Time TJ = 130° C TA tr , tf TJ = 90° C VOUT Parameter TJ = 100° C Symbol 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 MC74VHC1G132 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions TA ≤ 85°C TA = 25°C −55 ≤ TA ≤ 125°C VCC (V) Min Typ Max Min Max Min Max Unit VT+ Positive Threshold Voltage 3.0 4.5 5.5 1.50 2.35 2.80 1.88 2.66 3.21 2.25 3.10 3.70 1.50 2.35 2.80 2.25 3.10 3.70 1.50 2.35 2.80 2.25 3.10 3.70 V VT− Negative Threshold Voltage 3.0 4.5 5.5 0.65 1.10 1.45 1.03 1.62 2.02 1.40 2.10 2.60 0.65 1.10 1.45 1.40 2.10 2.60 0.65 1.10 1.45 1.40 2.10 2.60 V VH Hysteresis Voltage 3.0 4.5 5.5 0.30 0.40 0.50 0.85 1.05 1.20 1.60 2.00 2.25 0.30 0.40 0.50 1.60 2.00 2.25 0.30 0.40 0.50 1.60 2.00 2.25 V VIN = VCC or GND 2.0 1.9 2.0 1.9 1.9 VIN = VIH or VIL IOH = −50 mA 3.0 4.5 2.9 4.4 3.0 4.5 2.9 4.4 2.9 4.5 IOH = −4 mA IOH = −8 mA 3.0 4.5 2.58 3.94 2.48 3.80 2.34 3.66 VIN = VIH or VIL IOL = 50 mA 2.0 3.0 4.5 IOL = 4 mA IOL = 8 mA VOH VOL Minimum High−Level Output Voltage IOH = −50mA Maximum Low−Level Output Voltage 0.0 0.0 0.0 V V 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 V IIN Maximum Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 ±1.0 mA ICC Maximum Quiescent Supply Current VIN = VCC or GND 5.5 1.0 20 40 mA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎ Î ÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr/tf = 3.0 ns TA ≤ 85°C TA = 25°C Symbol tPLH, tPHL CIN Parameter Maximum Propagation Delay, A or B to Y Min Test Conditions −55 ≤ TA ≤ 125°C Typ Max Min Max Min Max Unit ns VCC = 3.3 ± 0.3 V CL = 15 pF CL = 50 pF 4.6 6.1 11.9 15.4 1.0 1.0 14.0 17.5 1.0 1.0 16.1 19.6 VCC = 5.0 ± 0.5 V CL = 15 pF CL = 50 pF 3.6 4.3 7.7 9.7 1.0 1.0 9.0 11.0 1.0 1.0 10.3 12.3 5.5 10 Maximum Input Capacitance 10 10 pF Typical @ 25°C, VCC = 5.0 V CPD 11 Power Dissipation Capacitance (Note 6) pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 3 MC74VHC1G132 TEST POINT VCC A or B OUTPUT 50% DEVICE UNDER TEST GND tPLH Y tPHL CL* 50% VCC *Includes all probe and jig capacitance Figure 4. Switching Waveforms Figure 5. Test Circuit DEVICE ORDERING INFORMATION Package Type Tape and Reel Size† MC74VHC1G132DFT1 SC70−5/SC−88A/SOT−353 178 mm (7 in) 3000 Units / Tape & Reel M74VHC1G132DFT1G SC70−5/SC−88A/SOT−353 (Pb−Free) 178 mm (7 in) 3000 Units / Tape & Reel MC74VHC1G132DFT2 SC70−5/SC−88A/SOT−353 178 mm (7 in) 3000 Units / Tape & Reel M74VHC1G132DFT2G SC70−5/SC−88A/SOT−353 (Pb−Free) 178 mm (7 in) 3000 Units / Tape & Reel MC74VHC1G132DTT1 SOT23−5/TSOP−5SC59−5 178 mm (7 in) 3000 Units / Tape & Reel M74VHC1G132DTT1G SOT23−5/TSOP−5SC59−5 (Pb−Free) 178 mm (7 in) 3000 Units / Tape & Reel Device Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MC74VHC1G132 PACKAGE DIMENSIONS SC−88A / SOT−353 / SC70 CASE 419A−02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) M B M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 J C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 mm Ǔ ǒinches MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 MC74VHC1G132 PACKAGE DIMENSIONS TSOP−5 / SOT23−5 / SC59−5 DT SUFFIX CASE 483−02 ISSUE D D S 5 4 1 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. A AND B DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. B L G A DIM A B C D G H J K L M S J C 0.05 (0.002) H M K MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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