ONSEMI NCV7701DWR2

NCV7701
2.0 Amp H−Bridge Driver
This automotive grade H−Bridge driver provides a flexible means
for controlling loads requiring bidirectional drive currents. Bridge
outputs are protected from overcurrent at each switch and
overtemperature shutdown provides product robustness. The
NCV7701 inputs can be interfaced to a range of voltages, including
vehicle battery voltage. The product features a low quiescent current
mode, allowing unswitched connection to the power source. The
NCV7701 is produced using ON Semiconductor’s POWERSENSE
BCD technology.
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SO−20L
DW SUFFIX
CASE 751D
20
1
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
MARKING DIAGRAM
Forward, Reverse, Brake High, Brake Low Modes
1.0 A Output Current Capability (DC)
Supply Voltage Range 7.0 V to 26 V
0.25 Ω RDS(ON) per Driver @ 25°C
Sleep Mode (IQ < 10 µA)
Overvoltage Protection
Thermal Protection
Undervoltage Disable Function
Short Circuit Protection
Cross Conduction Protection
Synchronous Low−Side Rectification for Lower Power Dissipation
Diagnostic Output (Open Drain)
TTL/CMOS/Pull−Up to Battery Compatible Inputs
20 Lead SO Package with 8 Internally Fused Leads
Typical Applications
• DC Motors
• Stepper Motors
• Modulator Valves
20
NCV7701
AWLYYWW
1
A
WL, L
YY, Y
WW, W
= Assembly Location
= Wafer Lot
= Year
= Work Week
PIN CONNECTIONS
1
20
NC
NC
OUTA
GND
GND
GND
GND
EN
IN1
IN2
VBAT
NC
OUTB
GND
GND
GND
GND
FAULT
NC
NC
ORDERING INFORMATION
Device
Package
Shipping†
NCV7701DW
SO−20L
37 Units/Rail
NCV7701DWR2
SO−20L
1000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 3
1
Publication Order Number:
NCV7701/D
NCV7701
VBAT
EN
Voltage
Reference
200 kHz
Oscillator
Charge
Pumps
ILIM
ILIM
M1
M3
IN1
Bridge
Control
OUTB
Gate
Drive
OUTA
IN2
M2
M4
Fault
Detection
FAULT
• TSD
• OVSD
• UVLO
Masking
Timer
ILIM
ILIM
GND
Figure 1. Block Diagram
MAXIMUM RATINGS*
Rating
Value
Unit
Supply Voltage (DC) − VBAT (Note 1)
−0.3 to 45
V
Logic Input Voltage (DC)
−0.3 to 12
V
Junction Temperature Range
−40 to 150
°C
Storage Temperature Range
−65 to 150
°C
Peak Transient (1.0 ms rise time, 300 ms period, 31 V Load Dump @ VBAT = 14 V) (Note 1)
45
V
ESD Susceptibility (Human Body Model)
2.0
kV
Package Thermal Resistance
Junction−to−Case, RθJC
Junction−to−Ambient, RθJA
9.0
55
°C/W
°C/W
230 peak
°C
Lead Temperature Soldering:
Reflow: (SMD styles only) (Note 2)
*The maximum package power dissipation must be observed.
1. External reverse−battery and transient voltage suppression (TVS) required.
2. 60 second maximum above 183°C.
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2
NCV7701
ELECTRICAL CHARACTERISTICS (7.0 V ≤ VBAT ≤ 26 V, −40°C ≤ TJ ≤ 125°C; unless otherwise specified.) Note 3.
Characteristic
Test Conditions
Min
Typ
Max
Unit
−
−
−
−
10
8.0
µA
mA
General
VBAT Quiescent Current:
Low Quiescent
Normal Operation
EN = 0 V, VBAT ≤ 12.8 V
2.5 V ≤ EN ≤ VBAT, VBAT = 14 V
EN Logic Input
Low Level Input Voltage
−
−
−
0.7
V
High Level Input Voltage
−
2.5
−
−
V
Input Bias Current
EN = 5.0 V
15
50
100
µA
Input Leakage Current
EN = 0 V
−
−
1.0
µA
IN1, IN2, Logic Inputs
Low Level Input Voltage
−
−
−
0.8
V
High Level Input Voltage
−
2.0
−
−
V
5.0
20
40
µA
−
−
1.0
µA
Input Bias Current
5.0 V on Logic Input, EN = 5.0 V
Input Leakage Current
0 V on Logic Input, EN = 0 V
IC Protection
Overvoltage Shutdown
−
27
32
37
V
Overvoltage Hysteresis
−
0.2
0.5
1.0
V
Undervoltage Voltage Lockout
−
−
−
6.5
V
Undervoltage Hysteresis
−
100
200
400
mV
Thermal Shutdown
(Guaranteed by Design)
160
185
210
°C
Thermal Hysteresis
(Guaranteed by Design)
10
22.5
35
°C
Output High Voltage (VH)
VBAT = 14 V, ISOURCE = 1.0 A, VH = VBAT − OUTX
−
0.4
0.75
V
Output Low Voltage (VL)
VBAT = 14 V, ISOURCE = 1.0 A, VL = OUTX − VGND
−
0.4
0.75
V
Current Limit
VBAT = 14 V
3.0
4.0
5.0
A
Drivers OUTA, OUTB
FAULT Output
Output Leakage Current
VFAULT = 5.0 V, Fault Absent
−
−
10
µA
Output Low Voltage
IFAULT = 0.5 mA, Fault Present
−
−
1.0
V
AC Characteristics
Output Turn−On Delay
−
−
5.0
10
µs
Output Turn−Off Delay
−
−
5.0
10
µs
Current Limit Mask Time
−
20
40
60
µs
3. Designed to meet these characteristics over the stated voltage and temperature ranges, though may not be 100% parametrically tested
in production.
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3
NCV7701
Table 1. H−Bridge Mode Control
Table 2. Fault Diagnostics
EN
IN1
IN2
H−Bridge
OUTA
OUTB
Fault Condition
Fault Pin
H−Bridge
0
X
X
Off (Sleep Mode)
Off
Off
No Faults
High Z
Normal Operation
1
0
0
Brake Low
Low
Low
Undervoltage
Low
Off
1
0
1
Forward
High
Low
Overvoltage
Low
Off
1
1
0
Reverse
Low
High
Thermal Shutdown
Low
Off
1
1
1
Brake High
High
High
Current Limit
Low
1 or more Drivers in
Current Limit
PACKAGE PIN DESCRIPTION
Pin No.
Symbol
Description
1
VBAT
2, 9, 10, 19, 20
NC
No connection.
3
OUTB
Bridge output.
4, 5, 6, 7, 14, 15, 16, 17
GND
Power ground.
8
FAULT
Diagnostic output.
11
IN2
Mode control input.
12
IN1
Mode control input.
13
EN
Chip enable.
18
OUTA
IC supply voltage.
Bridge output.
Operating Description
During power up, the outputs are HI−Z regardless of the
input states. When the undervoltage lockout threshold is
exceeded, the outputs will reflect the input states. Outputs
change to HI−Z whenever an undervoltage, overvoltage or
thermal shutdown fault is detected. Normal operation will
resume when faults are resolved.
half−bridge is disabled for short to VBAT or short to GND
faults. A mask timer is initiated after a fault is detected and
prevents recognition of an overcurrent event until the mask
time expires. Persistence of an overcurrent condition causes
the bridge output to change to HI−Z and the FAULT output
to latch low until the next transition occurs on either the
input related to the faulted output or the ENA input is
brought low then high again. This method of protection
provides current limiting on a cycle−by−cycle basis and
helps allow a stall torque current to be ignored during motor
start. Continued overcurrent may eventually result in
activation of the thermal shutdown circuitry, thus activating
a second level of protection for the NCV7701.
Overcurrent Protection
Current is monitored continuously in each switch of each
half bridge when the ENA input is in a high state thus
protecting each switch from faults due to short to GND,
short to VBAT or shorted load conditions. Only the affected
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4
NCV7701
VIGN
1
+
TVS
47 µF
20
VBAT
NC
NC
NC
OUTB
OUTA
GND
GND
GND
NCV7701
GND
GND
GND
GND
GND
FAULT
EN
NC
IN1
NC
IN2
Controller
VCC
Figure 2. Application Diagram
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5
NCV7701
PACKAGE DIMENSIONS
SO−20L
DW SUFFIX
CASE 751D−05
ISSUE F
A
20
X 45 M
E
h
0.25
H
10X
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION SHALL
BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT
MAXIMUM MATERIAL CONDITION.
11
B
M
D
1
10
20X
B
B
0.25
M
T A
S
B
S
L
A
18X
e
A1
SEATING
PLANE
C
T
DIM
A
A1
B
C
D
E
e
H
h
L
MILLIMETERS
MIN
MAX
2.35
2.65
0.10
0.25
0.35
0.49
0.23
0.32
12.65
12.95
7.40
7.60
1.27 BSC
10.05
10.55
0.25
0.75
0.50
0.90
0
7
POWERSENSE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
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ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
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6
For additional information, please contact your
local Sales Representative.
NCV7701/D