MZC400TS60U PRELIMINARY Fast Recovery Epitaxial Diode INT-A -PAK MZK400TS60U Ultra-FastTM Speed FRED Features · International standard package With DBC ceramic base plate Planar passivated chips Short recovery time Low switching losses Ultra-soft recovery behaviour Industry standard package UL recongnition pending · · · · · · MZC MZK VRRM = 600V IFAVM = 400A trr = 250ns Benefits · Antiparallel diode for high frequency switching devices Increased operating efficiency Direct mounting to heatsink Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Low voltage peaks for reduced protection circuits · · · · · Absolute Maximum Ratings Symbol Test Conditions VRSM & VRRM o Max. Units 600 V IFRMS TC=75 C 560 A IFAVM TC=75 oC; rectangular, d=0.5 400 A IFRM tp<10µs; rep. rating, pulse width limited by TVJM 2185 A IFSM TVJ=45 C; t=10ms (50 Hz),sine 3300 A o t=8.3ms (60 Hz),sine 3600 A TVJ=150 oC; t=10ms (50 Hz),sine 2880 A 3180 A 38400 A2s t=8.3ms (60 Hz),sine 39100 A2s TVJ=150 oC; t=10ms (50 Hz),sine 31100 A2s 31800 A2s 2500 V t=8.3ms (60 Hz),sine It 2 TVJ=45 C; t=10ms (50 Hz),sine o t=8.3ms (60 Hz),sine VISOL RMS Isolation Voltage, Any Terminal To Case, t=1 min PD TC=25 C TJ Operating Junction Temperature Range -40 to +150 TSTG Storage Temperature Range -40 to +125 o 1008 W o C MZC400TS60U MZK400TS60U Termal / Mechanical Characteristics Parameter Typ. Max. RθJS Termal Resistance, Junction-to- Sink DC - 0.202 RθJC Termal Resistance, Junction-to- Case DC - 0.122 RθCS Termal Resistance, Csar-to- Sink- Module 0.08 - Mouting Torque, Case-to-Heatsink - 4.0 Mouting Torque, Case-to-Terminal 1,2 & 3 - 3.0 200 - Weight of Module Units o C/W N.m g Electrical Characteristics (unless otherwise specified) Parameter Min. Units Conditions VRRM Reverse Breakdown Voltage 600 - - V IR=16mA IR Diode Leaking Current - - 16 mA TVJ=25 oC VR=VRRM - - 5 mA TVJ=25 oC VR=0.8VRRM - - 100 mA TVJ=125 oC VR=0.8VRRM - - 1.17 V IF=230A; TVJ=125 oC - - 1.36 V TVJ= 25 oC - - 1.41 V IF=400A; TVJ=125 oC - - 1.52 V TVJ= 25 oC - - 0.85 V - - 1.14 mΩ - 250 300 ns IF=400A IRM@TVJ= 25 oC Diode Peak Reverse Current - - 66 A VR=300V IRM@TVJ=100 oC Diode Peak Reverse Current - - 110 A -di/dt=600A/µs VF VTO Diode Forward Voltage For power-loss calculations only r6 trr@TVJ=100 oC Diode Reverse Recovery Time Typ. Max. Case Outline - Int-a-pak Dimensions are shown in millimeters 2