PRELIMINARY GA50TS120K ]HALF-BRODGE IGBT INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology UltraFast optimized high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode. Very low conduction and switching losses HEXFRED TM antiparallel diodes with ultra-soft recovery Industry standard package UL recongnition pending Short circuit rated 10 µs • • • • • VCE(on) typ.=2.5V @VGE=15V,IC=50A Benefits • • • Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding,Mortor Control Lower EMI, requries less snubbing • Absolute Maximum Ratings VCES IC @ Tc=25oC IC @ Tc=85oC ICM ILM IFM VGE VISOL PD @ TC =25oC PD @ TC =85oC TJ TSTG Parameter Termal / Mechanical Characteristics RθJC RθJC RθCS 1 Max. Collector- to- Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed collector Current Peak switching Current Peak Diode Forward Current Gate- to- Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t =1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Parameter Termal Resistance, Junction-to- Case- IBGT Termal Resistance, Junction-to- Case- Diode Termal Resistance, Csar-to- Sink- Module Mouting Torque, Case-to-Heatsink Mouting Torque, Case-to-Terminal 1,2 & 3 Weight of Module 1200 75 50 100 100 100 ±20 2500 417 217 -40 to +150 -40 to +125 Typ. 0.1 200 Units V A V W C o Max. 0.30 0.70 4.0 3.0 - Units C/W o N.m g GA50TS120K Electrical Characteristics @ TJ=25oC(unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 VGE=0V, IC=1mA VCE(ON) Collector-to-Emitter Voltage 2.5 VGE=15V, IC=50A 2.7 V VGE=15V, IC=50A,TJ=125oC VGE(th) Gate Threshold Voltage 4.5 5.5 DVGE(th)DTJ Temperature Coeff. of Threshold Voltage -11 gfe Forward Ttansconductance 72 S VCE=25V, IC=50A ICES Collector - to - Emitter Leaking Current 1.0 mA VGE=0V, VCE=1200V 10 VCE=6V, IC=500µA mV/oC VCE=VGE, IC=500µA VGE=0V, VCE=1200V, TJ=125oC VFM IGES Diode Forward Voltage - Maximum Gate - to - Emitter Leakage Current 2.0 2.5 1.8 100 V IF=50A , VGE=0V IF=50A , VGE=0V ,TJ=125oC nA VGE=±20V Dynamic Characteristics - TJ=125oC (unless otherwise specified) Parameter Min. Typ. Max. 397 596 67 100 132 197 Turn - On Delay Time 100 Qg Total gate charge ( turn - on ) Qge Gate - Emitter charge ( turn - on ) Qgc Gate - Collector charge ( turn - on ) Td(on) Units Conditions VCC= 400V nC IC=60A TJ =25oC RG1 =15Ω , RG2 = 0Ω tr Rise Time 90 Td(off) Turn - Off Delay Time 287 VCC=720V tf Fall Time 60 VGE=±15V Eon Turn - On Switching Energy 10 Eoff(1) Total Switching Energy 4 Ets(1) Turn - On Switching Energy 14 20 nS IC = 50A Inductor load mJ Cies Input Capacitance 8933 Coes Output Capacitance 397 Cres Reverse Transfer Capacitance 77 trr Diode Reverse Recovery Time 101 nS IC = 50A Irr Diode Peak Reverse Current 66 A RG1=15Ω Qrr Diode Recovery Charge 3616 nC RG2=0Ω di(rec)M/dt Diode Peak Rate of Fall of Recovery 999 A/µs VGE = 0V pF f =1MHZ During tb Tsc Short circuit withstand time VCC = 30V VCC=720V di/dt=1200A/µs 10 µs VCC=720V, VGE=±15V Min. RG1=15Ω, VCEP=1100V 2