ETC AS29LV400

AS29LV400
Preliminary Information
March 2001
®
3V 512K x 8/256K × 16 CMOS Flash EEPROM
Features
• Low power consumption
- 200 nA typical automatic sleep mode current
- 200 nA typical standby current
- 10 mA typical read current
• JEDEC standard software, packages and pinouts
- 48-pin TSOP
- 44-pin SO; availabillity TBD
• Detection of program/erase cycle completion
- DQ7 DATA polling
- DQ6 toggle bit
- DQ2 toggle bit
- RY/B Y output
• Erase suspend/resume
- Supports reading data from or programming data to a
sector not being erased
• Low VCC write lock-out below 1.5V
• 10 year data retention at 150C
• 100,000 write/erase cycle endurance
• Organization: 512Kx8/256Kx16
• Sector architecture
- One 16K; two 8K; one 32K; and seven 64K byte sectors
- One 8K; two 4K; one 16K; and seven 32K word sectors
- Boot code sector architecture—T (top) or B (bottom)
- Erase any combination of sectors or full chip
• Single 2.7-3.6V power supply for read/write operations
• Sector protection
• High speed 70/80/90/120 ns address access time
• Automated on-chip programming algorithm
- Automatically programs/verifies data at specified address
• Automated on-chip erase algorithm
- Automatically preprograms/erases chip or specified
sectors
• Hardware RES ET pin
- Resets internal state machine to read mode
Pin arrangement
48-pin TSOP
WE
B Y TE
Input/output
buffers
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
RESE T
Erase voltage
generator
44-pin SO
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
VSS
NC
VCC
DQ0–DQ15
RE SE T
BY
NC
RY/BY
NC
A17
A7
A6
A5
A4
A3
A2
A1
RY/
Sector protect/
erase voltage
switches
Program/erase
control
Command
register
Program voltage
generator
AS29LV40
STB
Chip enable
Output enable
Logic
CE
OE
Data latch
STB
Timer
Y decoder
Y gating
X decoder
Cell matrix
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RESET
WE
A8
A9
A10
A11
A12
A13
A14
A15
A16
BY TE
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
A16
BYTE
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
CE
A0
VSS
A0–A17
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
VCC detector
Address latch
A-1
RY/BY
NC
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
VSS
OE
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
AS29LV40
Logic block diagram
Selection guide
29LV400-70
29LV400-80
29LV400-90
29LV400-120
Unit
Maximum access time
tAA
70
80
90
120
ns
Maximum chip enable access time
tCE
70
80
90
120
ns
Maximum output enable access time
tOE
30
30
35
50
ns
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Alliance Semiconductor
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Copyright © Alliance Semiconductor. All rights reserved.
AS29LV400
March 2001
®
Functional description
The AS29LV400 is an 4 megabit, 3.0 volt Flash memory organized as 512Kbyte of 8 bits/256Kbytes of 16 bits each. For
flexible Erase and Program capability, the 4 megabits of data is divided into eleven sectors: one 16K, two 8K, one 32K, and
seven 64k byte sectors; or one 8K, two 4K, one 16K, and seven 32K word sectors. The ×8 data appears on DQ0–DQ7; the ×16
data appears on DQ0–DQ15. The AS29LV400 is offered in JEDEC standard 48-pin TSOP. A 44-pin SOP package may be offered
in the future. This device is designed to be programmed and erased with a single 3.0V VCC supply. The device can also be
reprogrammed in standard EPROM programmers.
The AS29LV400 offers access times of 70/80/90/120 ns, allowing 0-wait state operation of high speed microprocessors. To
eliminate bus contention the device has separate chip enable (CE ), write enable (W E ), and output enable (OE ) controls. Word
mode (×16 output) is selected by B Y T E = high. Byte mode (×8 output) is selected by B Y T E = low.
The AS29LV400 is fully compatible with the JEDEC single power supply Flash standard. The device uses standard
microprocessor write timings to send Write commands to the register. An internal state-machine uses register contents to
control the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the Programming
and Erase operations. Data is read in the same manner as other Flash or EPROM devices. Use the Program command sequence
to invoke the on-chip programming algorithm that automatically times the program pulse widths, and verifies proper cell
margin. Use the Erase command sequence to invoke the automated on-chip erase algorithm that preprograms the sector when
it is not already programmed before executing the erase operation. The Erase command also times the erase pulse widths and
verifies the proper cell margins.
Boot sector architecture enables the system to boot from either the top (AS29LV400T) or the bottom (AS29LV400B) sector.
Sector erase architecture allows specified sectors of memory to be erased and reprogrammed without altering data in other
sectors. A sector typically erases and verifies within 1.0 seconds. Hardware sector protection disables both the Program and the
Erase operations in all, or any combination of the eleven sectors. The device provides true background erase with Erase
Suspend, which puts erase operations on hold to either read data from, or program data to, a sector that is not being erased.
The Chip Erase command will automatically erase all unprotected sectors.
When shipped from the factory, AS29LV400 is fully erased (all bits = 1). The programming operation sets bits to 0. Data is
programmed into the array one byte at a time in any sequence and across sector boundaries. A sector must be erased to change
bits from 0 to 1. Erase returns all bytes in a sector to the erased state (all bits = 1). Each sector is erased individually with no
effect on other sectors.
The device features a single 3.0V power supply operation for Read, Write, and Erase functions. Internally generated and
regulated voltages are provided for the Program and Erase operations. A low V C C detector automatically inhibits write
operations during power transtitions. The RY/B Y pin, DATA polling of DQ7, or toggle bit (DQ6) may be used to detect the
end of the program or to erase operations. The device automatically resets to the Read mode after the Program or Erase
operations are completed. DQ2 indicates which sectors are being erased.
The AS29LV400 resists accidental erasure or spurious programming signals resulting from power transitions. The Control
register architecture permits alteration of memory contents only when successful completion of specific command sequences
has occured. During power up, the device is set to Read mode with all Program/Erase commands disabled if VCC is less than
VLKO (lockout voltage). The command registers are not affected by noise pulses of less than 5 ns on OE , CE , or W E. To initiate
Write commands, C E and W E must be a logical zero and O E a logical 1.
When the device’s hardware RE S ET pin is driven low, any Program/Erase operation in progress is terminated and the internal
state machine is reset to Read mode. If the RE S ET pin is tied to the system reset circuitry and a system reset occurs during an
automated on-chip Program/Erase algorithm, the operating data in the address locations may become corrupted and require
rewriting. Resetting the device enables the system’s microprocessor to read boot-up firmware from the Flash memory.
The AS29LV400 uses Fowler-Nordheim tunnelling to electrically erase all bits within a sector simultaneously. Bytes are
programmed one at a time using the EPROM programming mechanism of hot electron injection.
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AS29LV400
March 2001
®
Operating modes
Mode
CE
OE
WE
A0
A1
A6
A9
RESE T
DQ
ID read MFR code
L
L
H
L
L
L
VID
H
Code
ID read device code
L
L
H
H
L
L
VID
H
Code
Read
L
L
H
A0
A1
A6
A9
H
DOUT
Standby
H
X
X
X
X
X
X
H
High Z
Output disable
L
H
H
X
X
X
X
H
High Z
Write
L
H
L
A0
A1
A6
A9
H
DIN
Enable sector protect
L
VID
Pulse/L
L
H
L
VID
H
X
Sector unprotect
L
VID
Pulse/L
L
H
H
VID
H
X
Temporary sector
unprotect
X
X
X
X
X
X
X
VID
X
Verify sector protect†
L
L
H
L
H
L
VID
H
Code
Verify sector unprotect† L
L
H
L
H
H
VID
H
Code
Hardware Reset
X
X
X
X
X
X
L
High Z
X
L = Low (<VIL) = logic 0; H = High (>VIH) = logic 1; VID = 10.0 ± 1.0V; X = don’t care.
In ×16 mode, BYTE = VIH. In ×8 mode, BYTE = VIL with DQ8-DQ14 in high Z and DQ15 = A-1.
†
Verification of sector protect/unprotect during A9 = VID.
Mode definitions
Item
Description
ID MFR code,
device code
Selected by A9 = VID(9.5V–10.5V), CE = O E = A1 = A6 = L, enabling outputs.
When A0 is low (VIL) the output data = 52h, a unique Mfr. code for Alliance Semiconductor Flash products.
When A0 is high (VIH), DOUT represents the device code for the AS29LV400.
Read mode
Selected with CE = OE = L, WE = H. Data is valid in tACC time after addresses are stable, tCE after CE is low
and tOE after OE is low.
Standby
Selected with CE = H. Part is powered down, and ICC reduced to <1.0 µA when CE = VCC ± 0.3V = R ESE T.
If activated during an automated on-chip algorithm, the device completes the operation before entering
standby.
Output disable Part remains powered up; but outputs disabled with O E pulled high.
Write
Selected with CE = W E = L, O E = H. Accomplish all Flash erasure and programming through the command
register. Contents of command register serve as inputs to the internal state machine. Address latching occurs
on the falling edge of W E or CE , whichever occurs later. Data latching occurs on the rising edge W E or CE ,
whichever occurs first. Filters on W E prevent spurious noise events from appearing as write commands.
Enable
sector protect
Hardware protection circuitry implemented with external programming equipment causes the device to
disable program and erase operations for specified sectors. For in-system sector protection, refer to Sector
protect algorithm on page 14.
Sector
unprotect
Disables sector protection for all sectors using external programming equipment. All sectors must be
protected prior to sector unprotection. For in-system sector unprotection, refer to Sector unprotect algorithm
on page 14.
Verify sector
protect/
unprotect
Verifies write protection for sector. Sectors are protected from program/erase operations on commercial
programming equipment. Determine if sector protection exists in a system by writing the ID read command
sequence and reading location XXX02h, where address bits A12–17 select the defined sector addresses. A
logical 1 on DQ0 indicates a protected sector; a logical 0 indicates an unprotected sector.
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AS29LV400
March 2001
®
Item
Description
Temporary
sector
unprotect
Temporarily disables sector protection for in-system data changes to protected sectors. Apply +10V to
RE SET to activate temporary sector unprotect mode. During temporary sector unprotect mode, program
protected sectors by selecting the appropriate sector address. All protected sectors revert to protected state on
removal of +10V from RE S ET.
RE SET
Resets the interal state machine to read mode. If device is programming or erasing when RESET = L, data
may be corrupted.
Deep
power down
Hold RESET low to enter deep power down mode (<1 µA). Recovery time to start of first read cycle is 50ns.
Automatic
sleep mode
Enabled automatically when addresses remain stable for 300ns. Typical current draw is 1 µA. Existing data is
available to the system during this mode. If an address is changed, automatic sleep mode is disabled and new
data is returned within standard access times.
Flexible sector architecture
Bottom boot sector architecture (AS29LV400B)
Top boot sector architecture (AS29LV400T)
Sector
×8
×16
Size
(Kbytes)
×8
×16
Size
(Kbytes)
0
00000h–03FFFh
00000h–01FFFh
16
00000h–0FFFFh
00000h–07FFFh
64
1
04000h–05FFFh
02000h–02FFFh
8
10000h–1FFFFh
08000h–0FFFFh
64
2
06000h–07FFFh
03000h–03FFFh
8
20000h–2FFFFh
10000h–17FFFh
64
3
08000h–0FFFFh
04000h–07FFFh
32
30000h–3FFFFh
18000h–1FFFFh
64
4
10000h–1FFFFh
08000h–0FFFFh
64
40000h–4FFFFh
20000h–27FFFh
64
5
20000h–2FFFFh
10000h–17FFFh
64
50000h–5FFFFh
28000h–2FFFFh
64
6
30000h–3FFFFh
18000h–1FFFFh
64
60000h–6FFFFh
30000h–37FFFh
64
7
40000h–4FFFFh
20000h–27FFFh
64
70000h–77FFFh
38000h–3BFFFh
32
8
50000h–5FFFFh
28000h–2FFFFh
64
78000h–79FFFh
3C000h–3CFFFh
8
9
60000h–6FFFFh
30000h–37FFFh
64
7A000h–7BFFFh
3D000h–3DFFFh
8
10
70000h–7FFFFh
38000h–3FFFFh
64
7C000h–7FFFFh
3E000h–3FFFFh
16
In word mode, there are one 8K word, two 4K word, one 16K word, and seven 32K word sectors. Address range is A17–A-1 if B Y TE = VIL; address range
is A17–A0 if B Y T E = VIH.
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March 2001
®
ID Sector address table
Bottom boot sector address
(AS29LV400B)
Top boot sector address
(AS29LV400T)
Sector
A17
A16
A15
A14
A13
A12
A17
A16
A15
A14
A13
A12
0
0
0
0
0
0
X
0
0
0
X
X
X
1
0
0
0
0
1
0
0
0
1
X
X
X
2
0
0
0
0
1
1
0
1
0
X
X
X
3
0
0
0
1
X
X
0
1
1
X
X
X
4
0
0
1
X
X
X
1
0
0
X
X
X
5
0
1
0
X
X
X
1
0
1
X
X
X
6
0
1
1
X
X
X
1
1
0
X
X
X
7
1
0
0
X
X
X
1
1
1
0
X
X
8
1
0
1
X
X
X
1
1
1
1
0
0
9
1
1
0
X
X
X
1
1
1
1
0
1
10
1
1
1
X
X
X
1
1
1
1
1
X
READ codes
Mode
A17–A12
A6
A1
A0
Code
MFR code (Alliance Semiconductor)
X
L
L
L
52h
×8 T boot
X
L
L
H
B9h
×8 B boot
X
L
L
H
BAh
×16 T boot
X
L
L
H
22B9h
×16 B boot
X
L
L
H
22BAh
Sector address
L
H
L
01h protected
00h unprotected
Device code
Sector protection
Key: L =Low (<VIL); H = High (>VIH); X =Don’t care
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AS29LV400
March 2001
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Command format
Command sequence
Reset/Read
2nd bus cycle
Address
Data
Address
Data
1
XXXh
F0h
Read
Address
Read Data
×16
Reset/Read
1st bus cycle
Required bus
write cycles
555h
3
2AAh
AAh
×8
AAAh
×16
555h
Autoselect
ID Read
×16
555h
555h
3
×8
×16
×8
AAAh
×16
Program
×16
Unlock bypass
2AA
Program
data
Unlock bypass reset
2
XXX
90h
XXX
00h
555h
×16
Sector Erase
2AAh
AAh
1
XXXh
B0h
Sector Erase Resume
1
XXXh
30h
0001h=protected
0000h=unprotected
Program Address
Program Data
555h
80h
2AAh
AAh
AAAh
555h
55h
555h
Sector Erase Suspend
1
2
3
4
5
6
555h
AAAh
2AAh
AAh
AAAh
XXX04h
Sector protection
20h
55h
555h
555h
6
×8
0001h = protected
0000h = unprotected
555
Program
address
AAAh
52h
XXX02h
Sector protection
AAA
A0h
6
A0h
55h
555
XXX
×16
Data
555h
2
×8
0052h
6th bus cycle
Address
AAAh
Unlock bypass program
Chip Erase
00h
MFR code
Data
90h
55h
AAh
B9h(T)
BAh(B)
AAAh
555h
AAA
02h
Device code
555h
2AAh
555
3
×8
22B9h (T)
22BAh (B)
90h
55h
AAh
AAAh
01h
Device code
555h
555h
555h
4
×8
Read
Data
AAAh
2AAh
AAh
Read Address
Address
90h
55h
555h
555h
F0h
AAAh
2AAh
AAh
AAAh
Data
555h
55h
5th bus cycle
Address
AAAh
2AAh
AAAh
4th bus cycle
Data
555h
55h
555h
AAh
×8
3rd bus cycle
Address
555h
80h
AAAh
10h
AAAh
2AAh
AAh
AAAh
555h
55h
555h
55h
555h
Sector
Address
30h
Bus operations defined in "Mode definitions," on page 3.
Reading from and programming to non-erasing sectors allowed in Erase Suspend mode.
Address bits A11-A17 = X = Don’t Care for all address commands except where Program Address and Sector Address are required.
Data bits DQ15-DQ8 are don’t care for unlock and command cycles.
The Unlock Bypass command must be initiated before the Unlock Bypass Program command.
The Unlock Bypass Reset command returns the device to reading array data when it is in the unlock bypass mode.
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Command definitions
Item
Description
Reset/Read
Initiate read or reset operations by writing the Read/Reset command sequence into the command
register. This allows the microprocessor to retrieve data from the memory. Device remains in read
mode until command register contents are altered.
Device automatically powers up in read/reset state. This feature allows only reads, therefore
ensuring no spurious memory content alterations during power up.
AS29LV400 provides manufacturer and device codes in two ways. External PROM programmers
typically access the device codes by driving +10V on A9. AS29LV400 also contains an ID Read
command to read the device code with only +3V, since multiplexing +10V on address lines is
generally undesirable.
ID Read
Initiate device ID read by writing the ID Read command sequence into the command register.
Follow with a read sequence from address XXX00h to return MFR code. Follow ID Read command
sequence with a read sequence from address XXX01h to return device code.
To verify write protect status on sectors, read address XXX02h. Sector addresses A17–A12 produce
a 1 on DQ0 for protected sector and a 0 for unprotected sector.
Exit from ID read mode with Read/Reset command sequence.
Hardware Reset
Holding R ES E T low for 500 ns resets the device, terminating any operation in progress; data
handled in the operation is corrupted. The internal state machine resets 20 µs after RE SET is
driven low. RY/BY remains low until internal state machine resets. After RESE T is set high, there
is a delay of 50 ns for the device to permit read operations.
Programming the AS29LV400 is a four bus cycle operation performed on a byte-by-byte or wordby-word basis. Two unlock write cycles precede the Program Setup command and program data
write cycle. Upon execution of the program command, no additional CPU controls or timings are
necessary. Addresses are latched on the falling edge of C E or WE , whichever is last; data is latched
on the rising edge of CE or WE , whichever is first. The AS29LV400’s automated on-chip program
algorithm provides adequate internally-generated programming pulses and verifies the
programmed cell margin.
Byte/word
Programming
Check programming status by sampling data on the RY/B Y pin, or either the DATA polling (DQ7)
or toggle bit (DQ6) at the program address location. The programming operation is complete if
DQ7 returns equivalent data, if DQ6 = no toggle, or if RY/B Y pin = high.
The AS29LV400 ignores commands written during programming. A hardware reset occurring
during programming may corrupt the data at the programmed location.
AS29LV400 allows programming in any sequence, across any sector boundary. Changing data from
0 to 1 requires an erase operation. Attempting to program data 0 to 1 results in either DQ5 = 1
(exceeded programming time limits); reading this data after a read/reset operation returns a 0.
When programming time limit is exceeded, DQ5 reads high, and DQ6 continues to toggle. In this
state, a Reset command returns the device to read mode.
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Item
Description
The unlock bypass feature increases the speed at which the system programs bytes or words to the
device because it bypasses the first two unlock cycles of the standard program command sequence.
To initiate the unlock bypass command sequence, two unlock cycles must be written, then
followed by a third cycle which has the unlock bypass command, 20h.
Unlock Bypass
Command Sequence
The device then begins the unlock bypass mode. In order to program in this mode, a two cycle
unlock bypass program sequence is required. The first cycle has the unlock bypass program
command, A0h. It is followed by a second cycle which has the program address and data. To
program additional data, the same sequence must be followed.
The unlock bypass mode has two valid commands, the Unlock Bypass Program command and the
Unlock Bypass Reset command. The only way the system can exit the unlock bypass mode is by
issuing the unlock bypass reset command sequence. This sequence involves two cycles. The first
cycle contains the data, 90h. The second cycle contains the data 00h. Addresses are don’t care for
both cycles. The device then returns to reading array data.
Chip erase requires six bus cycles: two unlock write cycles; a setup command, two additional
unlock write cycles; and finally the Chip Erase command.
Chip Erase
Chip erase does not require logical 0s to be written prior to erasure. When the automated on-chip
erase algorithm is invoked with the Chip Erase command sequence, AS29LV400 automatically
programs and verifies the entire memory array for an all-zero pattern prior to erase. The 29LV400
returns to read mode upon completion of chip erase unless DQ5 is set high as a result of exceeding
time limit.
Sector erase requires six bus cycles: two unlock write cycles, a setup command, two additional
unlock write cycles, and finally the Sector Erase command. Identify the sector to be erased by
addressing any location in the sector. The address is latched on the falling edge of W E; the
command, 30h is latched on the rising edge of WE . The sector erase operation begins after a sector
erase time-out.
Sector Erase
To erase multiple sectors, write the Sector Erase command to each of the addresses of sectors to
erase after following the six bus cycle operation above. Timing between writes of additional sectors
must be less than the erase time-out period, or the AS29LV400 ignores the command and erasure
begins. During the time-out period any falling edge of WE resets the time-out. Any command
(other than Sector Erase or Erase Suspend) during time-out period resets the AS29LV400 to read
mode, and the device ignores the sector erase command string. Erase such ignored sectors by
restarting the Sector Erase command on the ignored sectors.
The entire array need not be written with 0s prior to erasure. AS29LV400 writes 0s to the entire
sector prior to electrical erase; writing of 0s affects only selected sectors, leaving non-selected
sectors unaffected. AS29LV400 requires no CPU control or timing signals during sector erase
operations.
Automatic sector erase begins after sector erase time-out from the last rising edge of W E from the
sector erase command stream and ends when the DATA polling (DQ7) is logical 1. DATA polling
address must be performed on addresses that fall within the sectors being erased. AS29LV400
returns to read mode after sector erase unless DQ5 is set high by exceeding the time limit.
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Item
Description
Erase Suspend allows interruption of sector erase operations to read data from or program data to a
sector not being erased. Erase suspend applies only during sector erase operations, including the
time-out period. Writing an Erase Suspend command during sector erase time-out results in
immediate termination of the time-out period and suspension of erase operation.
AS29LV400 ignores any commands during erase suspend other than Read/Reset, Program or Erase
Resume commands. Writing the Erase Resume Command continues erase operations. Addresses are
Don’t Care when writing Erase Suspend or Erase Resume commands.
Erase Suspend
AS29LV400 takes 0.2–15 µs to suspend erase operations after receiving Erase Suspend command.
To determine completion of erase suspend, either check DQ6 after selecting an address of a sector
not being erased, or poll RY/B Y. Check DQ2 in conjunction with DQ6 to determine if a sector is
being erased. AS29LV400 ignores redundant writes of Erase Suspend.
While in erase-suspend mode, AS29LV400 allows reading data (erase-suspend-read mode) from or
programming data (erase-suspend-program mode) to any sector not undergoing sector erase;
these operations are treated as standard read or standard programming mode. AS29LV400 defaults
to erase-suspend-read mode while an erase operation has been suspended.
Write the Resume command 30h to continue operation of sector erase. AS29LV400 ignores
redundant writes of the Resume command. AS29LV400 permits multiple suspend/resume
operations during sector erase.
Sector Protect
When attempting to write to a protected sector, DATA polling and Toggle Bit 1 (DQ6) are activated
for about <1 µs. When attempting to erase a protected sector, DATA polling and
Toggle Bit 1 (DQ6) are activated for about <5 µs. In both cases, the device returns to read mode
without altering the specified sectors.
Ready/Busy
RY/B Y indicates whether an automated on-chip algorithm is in progress (RY/B Y = low) or
completed (RY/B Y = high). The device does not accept Program/Erase commands when
RY/B Y = low. RY/B Y= high when device is in erase suspend mode. RY/BY = high when device
exceeds time limit, indicating that a program or erase operation has failed. RY/BY is an open drain
output, enabling multiple RY/BY pins to be tied in parallel with a pull up resistor to VCC.
Status operations
DATA polling (DQ7)
Only active during automated on-chip algorithms or sector erase time outs. DQ7 reflects
complement of data last written when read during the automated on-chip program algorithm (0
during erase algorithm); reflects true data when read after completion of an automated on-chip
program algorithm (1 after completion of erase agorithm).
Toggle bit 1 (DQ6)
Active during automated on-chip algorithms or sector erase time outs. DQ6 toggles when C E or
O E toggles, or an Erase Resume command is invoked. DQ6 is valid after the rising edge of the
fourth pulse of WE during programming; after the rising edge of the sixth W E pulse during chip
erase; after the last rising edge of the sector erase WE pulse for sector erase. For protected sectors,
DQ6 toggles for <1 µs during program mode writes, and <5 µs during erase (if all selected sectors
are protected).
Exceeding time limit
(DQ5)
Indicates unsuccessful completion of program/erase operation (DQ5 = 1). DATA polling remains
active. If DQ5 = 1 during chip erase, all or some sectors are defective; during byte programming or
sector erase, the sector is defective (in this case, reset the device and execute a program or erase
command sequence to continue working with functional sectors). Attempting to program 0 to 1
will set DQ5 = 1.
3/20/01; V.0.9.3
Alliance Semiconductor
P. 9 of 25
AS29LV400
March 2001
®
Sector erase timer
(DQ3)
Checks whether sector erase timer window is open. If DQ3 = 1, erase is in progress; no commands
will be accepted. If DQ3 = 0, the device will accept sector erase commands. Check DQ3 before and
after each Sector Erase command to verify that the command was accepted.
Toggle bit 2 (DQ2)
During sector erase, DQ2 toggles with OE or C E only during an attempt to read a sector being
erased. During chip erase, DQ2 toggles with OE or CE for all addresses. If DQ5 = 1, DQ2 toggles
only at sector addresses where failure occurred, and will not toggle at other sector addresses. Use
DQ2 in conjunction with DQ6 to determine whether device is in auto erase or erase suspend
mode.
Write operation status
Standard mode
Erase suspend mode
Exceeded time limits
Status
DQ7
DQ6
DQ5
DQ3
DQ2
RY/BY
Auto programming
DQ 7
Toggle
0
N/A
No toggle
†
0
0
Program/erase in auto erase
0
Toggle
0
1
Toggle
Read erasing sector
1
No toggle
0
N/A
Toggle
1
Read non-erasing sector
Data
Data
Data
Data
Data
1
Program in erase suspend
DQ 7
Toggle
0
N/A
Toggle†
0
Auto programming (byte)
DQ 7
Toggle
1
N/A
No toggle
1
1
1
Program/erase in auto erase
0
Toggle
1
N/A
Toggle†
Program in erase suspend
(non-erase suspended sector)
DQ 7
Toggle
1
N/A
No toggle
DQ2 toggles when an erase-suspended sector is read repeatedly.
DQ6 toggles when any address is read repeatedly.
DQ2 = 1 if byte address being programmed is read during erase-suspend program mode.
†
DQ2 toggles when the read address applied points to a sector which is undergoing erase, suspended erase, or a failure to erase.
3/20/01; V.0.9.3
Alliance Semiconductor
P. 10 of 25
March 2001
AS29LV400
®
Automated on-chip programming algorithm
Automated on-chip erase algorithm
START
START
Write erase command sequence
(see below)
Write program command sequence
(see below)
DATA polling or toggle bit
successfully completed
DATA polling or toggle bit
successfully completed
Erase complete
Individual sector/multiple sector
Increment
address
Last
address?
Chip erase command sequence
×16 mode (address/data):
NO
YES
erase command sequence
×16 mode (address/data):
555h/AAh
555h/AAh
2AAh/55h
2AAh/55h
555h/80h
555h/80h
555h/AAh
555h/AAh
2AAh/55h
2AAh/55h
555h/10h
Sector address/30h
Programming completed
Program command sequence
×16 mode (address/data):
555h/AAh
2AAh/55h
555h/A0h
Sector address/30h
Program address/program data
Sector address/30h
optional sector erase commands
†
3/20/01; V.0.9.3
The system software should check the status of DQ3 prior to and following each
subsequent sector erase command to ensure command completion. The device may
not have accepted the command if DQ3 is high on second status check.
Alliance Semiconductor
P. 11 of 25
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AS29LV400
®
Pro g r am m i ng u s i n g u nl oc k byp a s s c o m m an d
Unlock bypass command sequence
x16 mode (address/data)
START
555h/AAh
Write unlock
bypass command
(3 cycles)
2AAh/55h
555h/20h
Write unlock
bypass program command
(2 cycles)
Unlock bypass program
command sequence
x16 mode (address/data)
DATA polling or
toggle bit
successfully completed
xxxh/A0h
Increment
address
Last
address?
program address/
program data
NO
Unlock bypass reset
command sequence
x16 mode (address/data)
YES
xxxh/90h
Write unlock
bypass reset command
(2 cycles)
xxxh/00h
Programming completed
3/20/01; V.0.9.3
Alliance Semiconductor
P. 12 of 25
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AS29LV400
®
DATA
polling algorithm
Toggle bit algorithm
Read byte (DQ0–DQ7)
Address = VA†
DQ7
=
data
?
Read byte (DQ0–DQ7)
Address = don’t care
DQ6
=
toggle
?
YES DONE
NO
NO
NO
1
YES
Read byte (DQ0–DQ7)
Address = VA
YES†
Read byte (DQ0–DQ7)
Address = don’t care
DQ6
=
toggle†
?
DONE
NO†
NO
DONE
YES
FAIL
FAIL
VA = Byte address for programming. VA = any of the sector
addresses within the sector being erased during Sector Erase. VA
= valid address equals any non-protected sector group address
during Chip Erase.
‡
DQ7 rechecked even if DQ5 = 1 because DQ5 and DQ7 may not
change simultaneously.
3/20/01; V.0.9.3
DQ5
=
?
YES
†
DONE
YES
DQ5
=
1
?
DQ7
=
data‡
?
NO
†
DQ6 rechecked even if DQ5 = 1 because DQ6 may stop toggling
when DQ5 changes to 1.
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AS29LV400
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®
Sector protect algorithm
Temporary sector
unprotect mode
No
Sector unprotect algorithm
START
START
PLSCNT = 1
PLSCNT = 1
RESET# = VID
RESET# = VID
Wait 1 µs
Wait 1 µs
Protect all sectors:
The shaded portion of
the sector protct
algorithm must be
initiated for all
unprotected sectors
before calling the
sector unprotect
First Write
Cycle=60h?
Yes
Set up sector
address
Sector protect:
write 60h to sector
address with
A6=0, A1=1,
A0=0
No
All sectors
protected?
Yes
Sector unprotect:
write 60h to sector
address with
A6=1, A1=1,
A0=0
Verify sector
protect; write 40h
to sector address
with A6=0,
A1=1, A0=0
PLSCNT=25?
Wait 15 ms
Set up first
sector address
Read from sector
address with A6=0,
A1=1, A0=0
No
No
Verify sector
unprotect; write 40h
to sector address
with A6=1,
A1=1, A0=0
Increment
PLSCNT
Read from sector
address with A6=1,
A1=1, A0=0
Data=01h?
No
Yes
Set up next
sector address
Yes
Device failed
Protect
another
sector?
Yes
PLSCNT
=1000?
No
Remove VID
from RESET#
Write reset
command
Temporary sector
unprotect mode
Yes
Wait 150 µs
Increment
PLSCNT
No
First Write
Cycle=60h?
No
Data=00h?
Yes
Yes
Device failed
Last sector
verified?
No
Yes
Remove VID
from RESET#
Sector protect
complete
Write reset
command
Sector unprotect
complete
3/20/01; V.0.9.3
Alliance Semiconductor
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AS29LV400
March 2001
®
DC electrical characteristics
VCC = 2.7–3.6V
Parameter
Symbol Test conditions
Min
Max
Unit
Input load current
ILI
VIN = VSS to VCC, VCC = VCC MAX
-
±1
µA
A9 Input load current
ILIT
VCC = VCC MAX, A9 = 10V
35
µA
Output leakage current
ILO
VOUT = VSS to VCC, VCC = VCC MAX
-
±1
µA
Active current, read @ 5MHz
ICC1
CE = VIL, O E = VIH
-
20
mA
Active current, program/erase
ICC2
CE = VIL, O E = VIH
-
100
mA
Automatic sleep mode*
ICC3
CE = VIL, O E = VIH;
VIL= 0.3V, VIH = VCC - 0.3V
-
5
µA
Standby current
ISB
CE = VCC - 0.3V, RE SET = VCC - .3V
-
5
µA
Deep power down current3
IPD
RE SET = 0.3V
-
5
µA
Input low voltage
VIL
-0.5
0.8
V
Input high voltage
VIH
0.7×VCC
VCC + 0.3
V
Output low voltage
VOL
IOL = 4.0mA, VCC = VCC MIN
-
0.45
V
Output high voltage
VOH
IOH = -2.0 mA, VCC = VCC MIN
0.85×VCC
-
V
Low VCC lock out voltage
VLKO
1.5
-
V
Input HV select voltage
VID
9
11
V
* Automatic sleep mode enables the deep power down mode when addresses are stable for 150 ns. Typical sleep mode current is 200 nA.
3/20/01; V.0.9.3
Alliance Semiconductor
P. 15 of 25
AS29LV400
March 2001
®
AC parameters — read cycle
-70
JEDEC
Symbol
Std Symbol Parameter
Min
tAVAV
tRC
Read cycle time
70
tAVQV
tACC
Address to output delay
-
tELQV
tCE
Chip enable to output
tGLQV
tOE
-80
Max
Min
-90
-120
Max Min Max Min Max
Unit
80
-
90
-
120
-
ns
70
-
80
-
90
-
120
ns
-
70
-
80
-
90
-
120
ns
Output enable to output
-
30
-
30
-
35
-
50
ns
tOES
Output enable setup time
0
-
0
-
0
-
0
-
ns
tEHQZ
tDF
Chip enable to output High Z
-
20
-
20
-
30
-
30
ns
tGHQZ
tDF
Output enable to output High Z
-
20
-
20
-
30
-
30
ns
tAXQX
tOH
Output hold time from addresses,
first occurrence of C E or OE
0
-
0
-
0
-
0
-
ns
Output enable hold time: Read
10
-
10
-
10
-
10
-
ns
tOEH
Output enable hold time:
Toggle and data polling
10
-
10
-
10
-
10
-
ns
tRH
RESE T high to output delay
-
50
-
50
-
50
-
50
ns
tREADY
RESE T pin low to read mode
-
10
-
10
-
10
-
10
µs
tRP
RESE T pulse
500
-
500
-
500
-
ns
tPHQV
500
Read waveform
tRC
Addresses stable
Addresses
tACC
CE
tDF
tOE
tOES
OE
tOEH
WE
tCE
Outputs
High Z
tOH
Output valid
High Z
tRH
R ESE T
3/20/01; V.0.9.3
Alliance Semiconductor
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AS29LV400
March 2001
®
AC parameters — write cycle
WE controlled
-70
-80
-90
-120
JEDEC
Symbol
Std Symbol Parameter
Min
Max
Min
Max
Min
Max
Min
Max
Unit
tAVAV
tWC
Write cycle time
70
-
80
-
90
-
120
-
ns
tAVWL
tAS
Address setup time
0
-
0
-
0
-
0
-
ns
tWLAX
tAH
Address hold time
45
-
45
-
45
-
50
-
ns
tDVWH
tDS
Data setup time
35
-
35
-
45
-
50
-
ns
tWHDX
tDH
Data hold time
0
-
0
-
0
-
0
-
ns
tGHWL
tGHWL
Read recover time before write
0
-
0
-
0
-
0
-
ns
tELWL
tCS
CE setup time
0
-
0
-
0
-
0
-
ns
tWHEH
tCH
CE hold time
0
-
0
-
0
-
0
-
ns
tWLWH
tWP
Write pulse width
35
-
35
-
35
-
50
-
ns
tWHWL
tWPH
Write pulse width high
30
-
30
-
30
-
30
-
ns
Write waveform
WE controlled
3rd bus cycle
Addresses
tWC
tAS
555h
Program address
DATA
polling
Program address
tAH
tCH
CE
tGHWL; tOES
OE
tWP
WE
tCS
tWHWH1 or 2
tWPH
tDH
DATA
3/20/01; V.0.9.3
Program
data
A0h
DQ 7
DOUT
tDS
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AS29LV400
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®
AC parameters — write cycle 2
CE controlled
-70
-80
-90
-120
JEDEC
Symbol
Std Symbol
Parameter
Min
Max
Min
Max
Min
Max
Min
Max
Unit
tAVAV
tWC
Write cycle time
70
-
80
-
90
-
120
-
ns
tAVEL
tAS
Address setup time
0
-
0
-
0
-
0
-
ns
tELAX
tAH
Address hold time
45
-
45
-
45
-
50
-
ns
tDVEH
tDS
Data setup time
35
-
35
-
45
-
50
-
ns
tEHDX
tDH
Data hold time
0
-
0
-
0
-
0
-
ns
tGHEL
tGHEL
Read recover time before write
0
-
0
-
0
-
0
-
ns
tWLEL
tWS
WE setup time
0
-
0
-
0
-
0
-
ns
tEHWH
tWH
WE hold time
0
-
0
-
0
-
0
-
ns
tELEH
tCP
CE pulse width
35
-
35
-
35
-
50
-
ns
tEHEL
tCPH
CE pulse width high
30
-
30
-
30
-
30
-
ns
Write waveform 2
CE controlled
DATA
Addresses
555h
Program address
tWC
tAS
polling
Program address
tAH
WE
tGHEL, tOES
OE
tCP
tWHWH1 or 2
CE
tCPH
tDH
DATA
A0h
Program
data
DQ 7
DOUT
tDS
3/20/01; V.0.9.3
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March 2001
®
AC parameters — temporary sector unprotect
JEDEC
Symbol
-70
-80
-90
-120
Std
Symbol
Parameter
Min
Max
Min
Max
Min
Max
Min
Max
Unit
tVIDR
VID rise and fall time
500
-
500
-
500
-
500
-
ns
4
-
4
-
4
-
4
-
µs
RESE T setup time for
tRSP
temporary sector unprotect
Temporary sector unprotect waveform
10V
0 or 3V
R ESE T
tVIDR
CE
0 or 3V
tVIDR
Program/erase command sequence
WE
tRSP
RY/BY
AC parameters — R ES E T
JEDEC
Symbol
-80
-90
-120
Parameter
Min
Max
Min
Max
Min
Max
Min
Max
Unit
tRP
R ES E T pulse
500
-
500
-
500
-
500
-
ns
-
50
-
50
-
50
-
50
ns
-
10
-
10
-
10
-
10
µs
tRH
tREADY
RE SET
-70
Std
Symbol
R ES E T High time before
Read
R ES E T Low to Read mode
waveform
tRP
RESET
tRP
tREADY
RY/BY
tRH
DQ
status
status
valid data
valid data
Erase waveform
×16 mode
tWC
Addresses
tAS
555h
2AAh
555h
555h
2AAh
Sector address
tAH
CE
tGHWL
OE
tWP
tWC
WE
tWPH
tCS
tDH
AAh
Data
55h
80h
AAh
55h
10h for Chip Erase
30h
tDS
3/20/01; V.0.9.3
Alliance Semiconductor
P. 19 of 25
AS29LV400
March 2001
®
AC Parameters — READY/BUSY
JEDEC
Symbol
-70
-80
-90
-120
Std Symbol
Parameter
Min
Max
Min
Max
Min
Max
Min
Max
Unit
-
tVCS
VCC setup time
50
-
50
-
50
-
50
-
µs
-
tRB
Recovery time from RY/BY
0
-
0
-
0
-
0
-
ns
-
tBUSY
Program/erase valid to RY/BY delay
90
-
90
-
90
-
90
-
ns
RY/B Y waveform
CE
Rising edge of last WE signal
WE
RY/B Y
tri-stated open-drain
tBUSY
Program/erase
operation
tRB
VCC
tVCS
DATA
polling waveform
tCH
CE
tDF
tOE
OE
tOEH
WE
tCE
tOH
DQ7
Output DQ 7
Input DQ7
Output
High Z
tWHWH1 or 2
Toggle bit waveform
CE
tOEH
WE
OE
DQ6
tOE
tDH
3/20/01; V.0.9.3
toggle
Alliance Semiconductor
toggle
no toggle
P. 20 of 25
AS29LV400
March 2001
®
Word/byte configuration
-70
JEDEC
Symbol
Std Symbol
Parameter
-
tELFL/tELFH
-
BYTE
-80
-90
-120
Min
Max
Min
Max
Min
Max
Min
Max
Unit
CE to BYTE switching Low or High
-
10
-
10
-
10
-
10
ns
tFLQZ
B Y TE switching Low to output High-Z
-
30
-
30
-
35
-
40
ns
tFHQZ
B Y TE switching High to output Active
70
-
80
-
90
-
120
-
ns
read waveform
CE
OE
B
Y TE
BYTE
Word
to
Byte
tELFL
DQ15/A-1
tELFH
B Y TE
Byte
to
Word
DQ0-DQ14
Data output
DQ0-DQ14
DQ0-DQ7
Data output
DQ15 output
tFLQZ
DQ0-DQ14
DQ0-DQ7
Data output
DQ15/A-1
Address input
Address input
DQ0-DQ14
Data output
DQ15 output
tFHQV
BYTE
write waveform
CE
falling edge of last WE signal
WE
BY TE
tSET
(tAS)
See Erase/Program operations table for tAS and tAH specifications.
tHOLD (tAH)
Sector protect/unprotect
RE SE T#
VID
VIH
SA, A6,
A 1 , A0
Don’t care
Valid*
Don’t care
S e c to r p ro te c t/ u n pro t e c t
DATA
CE #
60h
1 µs
60h
Don’t care
Valid*
Don’t care
Valid*
Verify
40h
Don’t care
Status
Sector protect: 100 µs
Sector unprotect: 10 ms
W E#
O E#
* For sector protect, A6=0, A1=1, A0=0. For sector unprotect, A6=1, A1=1, A0=0.
3/20/01; V.0.9.3
Alliance Semiconductor
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AS29LV400
March 2001
®
AC test conditions
+3.0V
1N3064
or equivalent
2.7KΩ
Device under test
6.2KΩ
CL *
VSS
1N3064
or equivalent
VSS
VSS
Test specifications
Test Condition
-70,
-90,
-80
-120
Output Load
Unit
1 TTL gate
Output Load Capacitance CL (including jig capacitance)
30
Input Rise and Fall Times
100
pF
5
ns
0.0-3.0
V
Input timing measurement reference levels
1.5
V
Output timing measurement reference levels
1.5
V
Input Pulse Levels
Erase and programming performance
Limits
Parameter
Min
Typical
Max
Unit
-
1.0
15
sec
Byte
-
10
300
µs
Word
-
15
360
µs
-
7. 2
27
sec
-
100,000
-
cycles
Sector erase and verify-1 time (excludes 00h programming
prior to erase)
Programming time
Chip programming time
Erase/program cycles
*
* Erase/program cycle test is not verified on each shipped unit.
Latchup tolerance
Parameter
Min
Max
Unit
Input voltage with respect to VSS on A9, OE , and RE SET pin
-1.0
+12.0
V
Input voltage with respect to VSS on all DQ, address, and control pins
-0.5
VCC+0.5
V
Current
-100
+100
mA
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
3/20/01; V.0.9.3
Alliance Semiconductor
P. 22 of 25
AS29LV400
March 2001
®
Recommended operating conditions
Parameter
Supply voltage
Input voltage
Symbol
Min
Max
Unit
VCC
+2.7
+3.6
V
VSS
0
0
V
VIH
1.9
VCC + 0.3
V
VIL
–0.5
0.8
V
Absolute maximum ratings
Parameter
Symbol
Min
Max
Unit
Input voltage (Input or DQ pin)
VIN
–0.5
VCC+ 0.5
V
Input voltage (A9 pin, OE , RES ET )
VIN
–0.5
+12.5
V
Power supply voltage
VCC
-0.5
+4.0
V
Operating temperature
TOPR
–55
+125
°C
Storage temperature (plastic)
TSTG
–65
+150
°C
Short circuit output current
IOUT
150
mA
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
TSOP pin capacitance
Symbol
Parameter
Test setup
Typ
Max
Unit
CIN
Input capacitance
VIN = 0
6
7.5
pF
COUT
Output capacitance
VOUT = 0
8.5
12
pF
CIN2
Control pin capacitance
VIN = 0
8
10
pF
SO pin capacitance
Symbol
Parameter
Test setup
Typ
Max
Unit
CIN
Input capacitance
VIN = 0
6
7.5
pF
COUT
Output capacitance
VOUT = 0
8.5
12
pF
CIN2
Control pin capacitance
VIN = 0
8
10
pF
Data retention
Parameter
Minimum pattern data retention time
3/20/01; V.0.9.3
Alliance Semiconductor
Temp.(°C)
Min
Unit
150°
10
years
125°
20
years
P. 23 of 25
AS29LV400
March 2001
®
Thin small outline package (TSOP-I)
Package dimensions
b
e
48-pin
12×20
c
A2
L
pin 1
A
pin 48
pin 24
D
Min
Max
–
1.27
0.05
0.15
0.95
1.05
0.17
0.27
0.15 nominal
18.20
18.60
0.50 nominal
11.90
12.10
19.80
20.20
0.50
0.70
0°
5°
A
A1
A2
b
c
D
e
E
Hd
L
α
A1
Hd
pin 25
48-pin
α
E
Small Outline Plastic (SO)
Package dimensions
c
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
JEDEC MO - 175 AA
44-pin SO
Min (mm)
Max (mm)
A
–
3.1
A1
0.05
–
A2
2.5
2.9
b
0.25
0.45
c
0.09
0.25
d
28.0
28.4
e
12.4
12.8
E
1.27 (typical)
He
16.05 (typical)
l
0.73
3/20/01; V.0.9.3
1.3
e He
SO
1
2
3
4
5
6
7
8
0–10°
9 10 11 12 13 14 15 16 17 18 19 20 21 22
d
A2
A
A1
b
l
E
Alliance Semiconductor
P. 24 of 25
March 2001
AS29LV400
®
AS29LV400 ordering codes
Package \ Access Time
70 ns (commercial/
industrial)
80 ns (commercial/
industrial)
90 ns (commercial/
industrial)
120 ns (commercial/
industrial)
TSOP, 12×20 mm, 48-pin
Top boot configuration
AS29LV400T-70TC
AS29LV400T-70TI
AS29LV400T-80TC
AS29LV400T-80TI
AS29LV400T-90TC
AS29LV400T-90TI
AS29LV400T-120TC
AS29LV400T-120TI
TSOP, 12×20 mm, 48-pin
Bottom boot configuration
AS29LV400B-70TC
AS29LV400B-70TI
AS29LV400B-80TC
AS29LV400B-80TI
AS29LV400B-90TC
AS29LV400B-90TI
AS29LV400B-120TC
AS29LV400B-120TI
SO, 13.3 mm, 44-pin
Top boot configuration
AS29LV400T-70SC
AS29LV400T-70SI
AS29LV400T-80SC
AS29LV400T-80SI
AS29LV400T-90SC
AS29LV400T-90SI
AS29LV400T-120SC
AS29LV400T-120SI
SO, 13.3 mm, 44-pin
Bottom boot configuration
AS29LV400B-70SC
AS29LV400B-70SI
AS29LV400B-80SC
AS29LV400B-80SI
AS29LV400B-90SC
AS29LV400B-90SI
AS29LV400B-120SC
AS29LV400B-120SI
Shaded area indicates advance information. Avialability of SO package is TBD.
AS29LV400 part numbering system
AS29LV
400
3V Flash
EEPROM
prefix
Device T= Top boot configuration
number B= Bottom boot configuration
3/20/01; V.0.9.3
X
–XXX
X
Package:
Address
S = SO
access time
T = TSOP
Alliance Semiconductor
X
X
Temperature range:
C = Commercial: 0°C to 70°C
I = Industrial: -40°C to 85°C
Options:
B = Burn-in
H = High ISB (<1mA)
Blank= Standard
P. 25 of 25
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may appear in this document. The data contained herein represents Alliance’s best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at any time, without
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