Philips Semiconductors Product specification Three quadrant triacs high commutation BTA208X-1000B GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated high voltage, high commutation triac in a full pack, plastic envelope. This triac is intended for use in motor control circuits where high blocking voltage, high static and dynamic dV/dt and high dI/dt can occur. This device will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. PINNING - SOT186A PIN SYMBOL VDRM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current IT(RMS) ITSM PIN CONFIGURATION MAX. UNIT 1000 V 8 65 A A SYMBOL DESCRIPTION case 1 main terminal 1 2 main terminal 2 3 gate T2 T1 G 1 2 3 case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) RMS on-state current ITSM Non-repetitive peak on-state current I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj August 2003 I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power CONDITIONS full sine wave; Ths ≤ 73 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs over any 20 ms period Storage temperature Operating junction temperature 1 MIN. MAX. UNIT - 1000 V - 8 A - 65 71 21 100 A A A2s A/µs - 2 5 5 0.5 A V W W -40 - 150 125 ˚C ˚C Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA208X-1000B ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visol R.M.S. isolation voltage from all three terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree - - 2500 V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF MIN. TYP. MAX. UNIT - 55 4.5 6.5 - K/W K/W K/W MIN. TYP. MAX. UNIT T2+ G+ T2+ GT2- G- 2 2 2 18 21 34 50 50 50 mA mA mA T2+ G+ T2+ GT2- G- VD = 12 V; IGT = 0.1 A IT = 10 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C 0.25 - 31 34 30 31 1.3 0.7 0.4 0.1 60 90 60 60 1.65 1.5 0.5 mA mA mA mA V V V mA THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Rth j-a Thermal resistance junction to ambient full or half cycle with heatsink compound without heatsink compound in free air STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS 1 IGT Gate trigger current IL Latching current IH VT VGT Holding current On-state voltage Gate trigger voltage ID Off-state leakage current VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 8 A; without snubber; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs 1000 4000 - V/µs 15 38 - A/ms - 2 - µs dIcom/dt tgt 1 Device does not trigger in the T2-, G+ quadrant. August 2003 2 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation 12 BTA208X-1000B Ths(max) / C 71 = 180 Ptot / W 120 10 10 80 8 73 C 89 60 6 30 6 BT137X 8 90 1 IT(RMS) / A 98 4 4 107 2 116 0 0 2 4 6 IT(RMS) / A 2 125 10 8 0 -50 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. 1000 0 50 Ths / C 100 150 Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths. ITSM / A 25 IT(RMS) / A 20 dI T /dt limit 15 100 10 I TSM IT T 5 time Tj initial = 25 C max 10 10us 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. 80 60 50 1.6 ITSM IT T 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 73˚C. ITSM / A 70 0.1 1 surge duration / s VGT(Tj) VGT(25 C) 1.4 time Tj initial = 25 C max 1.2 40 1 30 0.8 20 0.6 10 0 1 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. August 2003 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation 3 BTA208X-1000B IGT(Tj) IGT(25 C) 25 Tj = 125 C Tj = 25 C T2+ G+ T2+ GT2- G- 2.5 IT / A 2 max typ 20 Vo = 1.264 V Rs = 0.0378 Ohms 15 1.5 10 1 5 0.5 0 -50 0 50 Tj / C 100 0 150 0.5 1 1.5 VT / V 2 2.5 3 Fig.10. Typical and maximum on-state characteristic. Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 0 IL(Tj) IL(25 C) 10 Zth j-hs (K/W) with heatsink compound without heatsink compound 2.5 unidirectional 1 2 bidirectional 1.5 0.1 1 P D tp t 0.5 0 -50 0 50 Tj / C 100 0.01 10us 150 1ms 10ms 0.1s 1s 10s tp / s Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms IH(Tj) IH(25C) 1000 dIcom/dt (A/ms) 2.5 typ 100 2 min 1.5 10 1 0.5 0 -50 1 0 50 Tj / C 100 150 20 Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. August 2003 40 60 80 100 140 120 Tj / °C Fig.12. Typical, critical rate of change of commutating current dIcom/dt versus junction temperature. 4 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA208X-1000B MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 max. 19 max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.13. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". August 2003 5 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA208X-1000B DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS2 PRODUCT STATUS3 DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. August 2003 6 Rev 1.000