Philips Semiconductors Product specification Triacs MAC223A8X GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triac in a full pack, plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. PINNING - SOT186A PIN SYMBOL PARAMETER MAX. UNIT VDRM Repetitive peak off-state voltages 600 V IT(RMS) RMS on-state current 20 A ITSM Non-repetitive peak on-state current 230 A PIN CONFIGURATION SYMBOL DESCRIPTION case 1 main terminal 1 2 main terminal 2 3 gate T2 T1 G 1 2 3 case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) ITSM RMS on-state current Non-repetitive peak on-state current I2t dIT/dt I2t for fusing Repetitive rate of rise of on-state current after triggering IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature September 2002 CONDITIONS full sine wave; Ths ≤ 25 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ over any 20 ms period 1 MIN. MAX. UNIT - 6001 V - 20 A - 230 180 A A2s -40 -40 50 50 50 10 2 5 5 0.5 150 125 A/µs A/µs A/µs A/µs A V W W ˚C ˚C Rev 1.000 Philips Semiconductors Product specification Triacs MAC223A8X THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-hs Thermal resistance junction heatsink Rth j-a Thermal resistance junction to ambient full or half cycle with heatsink compound without heatsink compound in free air - 55 3.85 5.5 - K/W K/W K/W MIN. TYP. MAX. UNIT - - 2500 V - 10 - pF MIN. TYP. MAX. UNIT T2+ G+ T2+ GT2- GT2- G+ - 6 10 11 23 50 50 50 75 mA mA mA mA T2+ G+ T2+ GT2- GT2- G+ - 8 30 18 15 40 60 40 60 mA mA mA mA IT = 30 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C 0.25 - 7 12 1.3 0.7 0.4 0.1 30 30 1.55 1.5 0.5 mA mA V V V mA ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol R.M.S. isolation voltage from all three terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS IGT Gate trigger current VD = 12 V; IT = 0.1 A IL Latching current IH Holding current VT VGT On-state voltage Gate trigger voltage ID Off-state leakage current VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A T2+ T2- DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 25 A; dIcom/dt = 9 A/ms; gate open circuit ITM = 30 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs 100 300 - V/µs - 10 - V/µs - 2 - µs dVcom/dt tgt September 2002 2 Rev 1.000 Philips Semiconductors Product specification Triacs 30 MAC223A8X Ptot (W) Ths(max) (°C) IT (RMS) (A) 10 25 = 180 20 120 1 20 48 90 60 15 30 10 87 10 5 125 0 0 5 10 15 0 -50 20 25 IT(RMS) (A) Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. 1000 0 50 100 Ths (°C) 150 Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths. ITSM / A 50 IT(RMS) / A 40 30 100 dI T /dt limit 20 I TSM IT T2- G+ quadrant T 10 time Tj initial = 25 C max 10 10us 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. 200 1.6 ITSM T 150 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 91˚C. ITSM / A IT 0.1 1 surge duration / s VGT(Tj) VGT(25 C) 1.4 time Tj initial = 25 C max 1.2 100 1 0.8 50 0.6 0 1 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. September 2002 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.000 Philips Semiconductors Product specification Triacs 5 MAC223A8X IGT(Tj) IGT(25 C) T2+ G+ T2+ GT2- GT2- G+ 4 BTA140 IT / A 80 Tj = 125 C Tj = 25 C 70 typ 60 Vo = 1.073 V max Rs = 0.015 ohms 50 3 40 2 30 20 1 10 0 -50 0 50 Tj / C 100 0 150 0.5 1 1.5 VT / V 2 2.5 3 Fig.10. Typical and maximum on-state characteristic. Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 0 IL(Tj) IL(25 C) 10 Zth j-hs (K/W) with heatsink compound without heatsink compound 2.5 1 unidirectional bidirectional 2 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 1ms 10ms 0.1s 10s 1s tp (s) Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp. IH(Tj) IH(25C) 1000 dV/dt (V/us) off-state dV/dt limit 2.5 100 2 1.5 dIcom/dt = 25 A/ms 10 1 20 15 12 9.0 7.0 0.5 0 -50 0 50 Tj / C 100 1 150 50 100 150 Tj / C Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. September 2002 0 Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt. 4 Rev 1.000 Philips Semiconductors Product specification Triacs MAC223A8X MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 max. 19 max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.13. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 2002 5 Rev 1.000 Philips Semiconductors Product specification Triacs MAC223A8X DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS1 PRODUCT STATUS2 DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1 Please consult the most recently issued datasheet before initiating or completing a design. 2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. September 2002 6 Rev 1.000