ETC SI2200

Si2200
RF SYNTHESIZER WITH INTEGRATED VCOS
FOR SATELLITE RADIO
Features
!
Dual-band RF synthesizers
"
"
!
!
!
!
IF synthesizer
"
!
RF1: 2300 to 2500 MHz
RF2: 2025 to 2300 MHz
!
62.5 to 1000 MHz
Integrated VCOs, loop filters,
varactors, and resonators
!
!
Minimal external components
required
Low phase noise
5 µA standby current
25.7 mA typical supply current
2.9 to 3.6 V operation
28-lead QFN
"
Ordering Information:
See page 28.
Lead-Free and RoHS Compliant
Applications
!
Pin Assignments
Satellite Radio
Si2200-GM
SDATA
SCLK
SEN
AUXOUT
Serial
Interface
÷NRF1
÷RRF2
RFOUT
GND
IFOUT
VDDI
SCLK
SEN
SDATA
19
IFLA
GND
GND
4
18
GND
NC
5
17
VDDD
GND
6
16
GND
GND
7
15
XIN
8
9
10 11 12 13 14
Phase
Detect
RF2
22-bit
Data
Register
Test
Mux
÷2
3
GND
RF1
Power
Down
Control
IFLB
NC
PWDN
Phase
Detect
20
AUXOUT
÷RRF1
GND
2
VDDR
PWDN
÷1/÷2
21
GND
RFOUT
XIN
Reference
Amplifier
1
GND
Functional Block Diagram
28 27 26 25 24 23 22
GND
GND
The Si2200 is a monolithic integrated circuit that performs both IF and RF
synthesis for wireless communications applications. The Si2200 includes
three VCOs, loop filters, reference and VCO dividers, and phase
detectors. Divider and powerdown settings are programmable through a
three-wire serial interface.
GND
Description
÷NRF2
÷RIF
Patents pending
÷2
Phase
Detect
IFDIV
IFOUT
IF
÷NIF
Rev. 1.0 5/05
IFLA
IFLB
Copyright © 2005 by Silicon Laboratories
Si2200
Si2200
2
Rev. 1.0
Si2200
TA B L E O F C O N T E N TS
Section
Page
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
2. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.1. Serial Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.2. Setting the IF VCO Center Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.3. Self-Tuning Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.4. Output Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.5. PLL Loop Dynamics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.6. RF and IF Outputs (RFOUT and IFOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.7. Reference Frequency Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2.8. Powerdown Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2.9. Auxiliary Output (AUXOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3. Control Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
4. Pin Descriptions: Si2200 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
5. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
6. Package Outline: Si2200-GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Rev. 1.0
3
Si2200
1. Electrical Specifications
Table 1. Recommended Operating Conditions1,2
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Ambient Operating Temperature
TA
–40
25
85
°C
Ambient Functional Temperature
TF
–40
25
95
°C
Supply Voltage
VDD
2.9
3.3
3.6
V
Supply Voltages Difference
V∆
–0.3
—
0.3
V
(VDDR – VDDD),
(VDDI – VDDD)
Notes:
1. All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise stated.
2. Minimum and maximum specifications are not guaranteed across the functional temperature range.
Table 2. Absolute Maximum Ratings1,2
Parameter
Symbol
Value
Unit
VDD
–0.5 to 4.0
V
Input Current3
IIN
±10
mA
Input Voltage3
VIN
–0.3 to VDD+0.3
V
TSTG
–55 to 150
oC
DC Supply Voltage
Storage Temperature Range
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of this
device should only be done at ESD-protected workstations.
3. For signals SCLK, SDATA, SEN, PWDN, and XIN.
4
Rev. 1.0
Si2200
Table 3. DC Characteristics
(VDD = 2.7 to 3.6 V, TA = –40 to 85 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
RF1 and IF operating
—
28.7
35
mA
RF1 Mode Supply Current1
—
19.5
24
mA
RF2 Mode Supply Current1
—
18.5
23
mA
IF Mode Supply Current1
—
10
12
mA
—
1
—
µA
1
Total Supply Current
Standby Current
PWDN = 0
High Level Input Voltage2
VIH
0.7 VDD
—
—
V
Low Level Input Voltage2
VIL
—
—
0.3 VDD
V
High Level Input Current2
IIH
VIH = 3.6 V,
VDD = 3.6 V
–10
—
10
µA
Low Level Input Current2
IIL
VIL = 0 V,
VDD= 3.6 V
–10
—
10
µA
High Level Output Voltage3
VOH
IOH = –500 µA
VDD–0.4
—
—
V
Low Level Output Voltage3
VOL
IOH = 500 µA
—
—
0.4
V
Notes:
1. RF1 = 2.4 GHz, RF2 = 2.1 GHz, IFOUT = 800 MHz, LPWR = 0.
2. For signals SCLK, SDATA, SEN, and PWDN.
3. For signal AUXOUT.
Rev. 1.0
5
Si2200
Table 4. Serial Interface Timing
(VDD = 2.7 to 3.6 V, TA = –40 to 85 °C)
Symbol
Test Condition
Min
Typ
Max
Unit
SCLK Cycle Time
tclk
Figure 1
40
—
—
ns
SCLK Rise Time
tr
Figure 1
—
—
50
ns
SCLK Fall Time
tf
Figure 1
—
—
50
ns
SCLK High Time
th
Figure 1
10
—
—
ns
SCLK Low Time
tl
Figure 1
10
—
—
ns
SDATA Setup Time to SCLK↑2
tsu
Figure 2
5
—
—
ns
SDATA Hold Time from SCLK↑2
Parameter1
thold
Figure 2
0
—
—
ns
2
SEN↓ to SCLK↑ Delay Time
ten1
Figure 2
10
—
—
ns
SCLK↑ to SEN↑ Delay Time2
ten2
Figure 2
12
—
—
ns
SEN↑ to SCLK↑ Delay Time2
ten3
Figure 2
12
—
—
ns
tw
Figure 2
10
—
—
ns
SEN Pulse Width
Notes:
1. All timing is referenced to the 50% level of the waveform, unless otherwise noted.
2. Timing is not referenced to the 50% level of the waveform. See Figure 2.
tr
tf
80%
SCLK
50%
20%
th
tclk
Figure 1. SCLK Timing Diagram
6
Rev. 1.0
tl
Si2200
A
A
Figure 2. Serial Interface Timing Diagram
First bit
clocked in
Last bit
clocked in
D D D D D D D D D D D D D D D D D D A A A A
17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 3 2 1 0
data
field
address
field
Figure 3. Serial Word Format
Rev. 1.0
7
Si2200
Table 5. RF and IF Synthesizer Characteristics
(VDD = 2.7 to 3.6 V, TA = –40 to 85 °C)
Symbol
Test Condition
Min
Typ
Max
Unit
XIN Input Frequency
fREF
XINDIV2 = 0
2
—
25
MHz
XIN Input Frequency
fREF
XINDIV2 = 1
25
—
50
MHz
Reference Amplifier Sensitivity
VREF
0.5
—
VDD
+0.3 V
VPP
0.010
—
1.0
MHz
RF1 VCO Tuning Range2
2300
—
2500
MHz
RF2 VCO Tuning Range2
2025
—
2300
MHz
526
—
952
MHz
with IFDIV
62.5
—
1000
MHz
Note: L ±10%
–5
—
5
%
Open loop
—
0.75
—
MHz/V
RF2 VCO Pushing
—
0.65
—
MHz/V
IF VCO Pushing
—
0.10
—
MHz/V
—
0.250
—
MHz p-p
—
0.100
—
MHz p-p
—
0.025
—
MHz p-p
1 MHz offset
—
–130
—
dBc/Hz
100 Hz to 100 kHz
—
1.2
—
degrees
rms
1 MHz offset
—
–131
—
dBc/Hz
RF2 Integrated Phase Error
100 Hz to 100 kHz
—
1.0
—
degrees
rms
IF Phase Noise at 800 MHz
100 kHz offset
—
–104
—
dBc/Hz
100 Hz to 100 kHz
—
0.4
—
degrees
rms
Parameter1
Phase Detector Update Frequency
IF VCO Center Frequency Range
IFOUT Tuning Range from fCEN
IFOUT VCO Tuning Range from fCEN
RF1 VCO Pushing
RF1 VCO Pulling
RF2 VCO Pulling
fφ
fφ = fREF/R for
XINDIV2 = 0
fφ = fREF/2R for
XINDIV2 = 1
fCEN
VSWR = 2:1, all
phases, open loop
IF VCO Pulling
RF1 Phase Noise
RF1 Integrated Phase Error
RF2 Phase Noise
IF Integrated Phase Error
Notes:
1. fφ(RF) = 1 MHz, fφ(IF) = 1 MHz, RF1 = 2.4 GHz, RF2 = 2.1 GHz, IFOUT = 800 MHz, LPWR = 0.
2. RF VCO tuning range limits are fixed by inductance of internally bonded wires.
3. From powerup request (PWDN↑ or SEN↑ during a write of 1 to bits PDIB and PDRB in Register 2) to RF and IF
synthesizers ready (settled to within 0.1 ppm frequency error).
4. From powerdown request (PWDN↓, or SEN↑ during a write of 0 to bits PDIB and PDRB in Register 2) to supply current
equal to IPWDN.
8
Rev. 1.0
Si2200
Table 5. RF and IF Synthesizer Characteristics (Continued)
(VDD = 2.7 to 3.6 V, TA = –40 to 85 °C)
Test Condition
Min
Typ
Max
Unit
Second Harmonic
—
–28
–20
dBc
RF2 Harmonic Suppression
—
–23
–20
dBc
IF Harmonic Suppression
—
–26
–20
dBc
Parameter1
Symbol
RF1 Harmonic Suppression
RFOUT Power Level
ZL = 50 Ω, RF1 active
–3
–1
3
dBm
RFOUT Power Level
ZL = 50 Ω, RF2 active
–3
–1
3
dBm
IFOUT Power Level
ZL = 50 Ω
–8
–4
0
dBm
Offset = 1 MHz
—
–63
—
dBc
Offset = 2 MHz
—
–68
—
dBc
Offset = 3 MHz
—
–70
—
dBc
Offset = 1 MHz
—
–63
—
dBc
Offset = 2 MHz
—
–68
—
dBc
Offset = 3 MHz
—
–70
—
dBc
µs
RF1 Output Reference Spurs
RF2 Output Reference Spurs
Powerup Request to Synthesizer Ready3
Time
tpup
Figures 4, 5
fφ > 500 kHz
—
80
100
Powerup Request to Synthesizer Ready3
Time
tpup
Figures 4, 5
fφ ≤ 500 kHz
—
40/fφ
50/fφ
Powerdown Request to Synthesizer Off4
Time
tpdn
Figures 4, 5
—
—
100
ns
Notes:
1. fφ(RF) = 1 MHz, fφ(IF) = 1 MHz, RF1 = 2.4 GHz, RF2 = 2.1 GHz, IFOUT = 800 MHz, LPWR = 0.
2. RF VCO tuning range limits are fixed by inductance of internally bonded wires.
3. From powerup request (PWDN↑ or SEN↑ during a write of 1 to bits PDIB and PDRB in Register 2) to RF and IF
synthesizers ready (settled to within 0.1 ppm frequency error).
4. From powerdown request (PWDN↓, or SEN↑ during a write of 0 to bits PDIB and PDRB in Register 2) to supply current
equal to IPWDN.
Rev. 1.0
9
Si2200
RF synthesizers settled to within
0.1 ppm frequency error.
tpup
IT
RF synthesizers settled to within
0.1 ppm frequency error.
tpdn
IPWDN
IT
tpup
tpdn
IPWDN
SEN
PWDN
SDATA
PDIB = 1
PDRB = 1
PDIB = 0
PDRB = 0
Figure 5. Hardware Power Management
Timing Diagram
Figure 4. Software Power Management
Timing Diagram
10
Rev. 1.0
Si2200
Figure 6. Typical Transient Response RF1 at 2.4 GHz
with 1 MHz Phase Detector Update Frequency
Rev. 1.0
11
Si2200
-60
-70
Phase Noise (dBc/Hz)
-80
-90
-100
-110
-120
-130
-140
1.E+02
1.E+03
1.E+04
1.E+05
Offset Frequency (Hz)
Typical RF1 Phase Noise at 2.4 GHz
Figure 7. Typical RF1 Phase Noise at 2.4 GHz
with 1 MHz Phase Detector Update Frequency
Figure 8. Typical RF1 Spurious Response at 2.4 GHz
with 1 MHz Phase Detector Update Frequency
12
Rev. 1.0
1.E+06
Si2200
-60
-70
Phase Noise (dBc/Hz)
-80
-90
-100
-110
-120
-130
-140
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
Offset Frequency (Hz)
Typical RF2 Phase Noise at 2.1 GHz
Figure 9. Typical RF2 Phase Noise at 2.1 GHz
with 1 MHz Phase Detector Update Frequency
Figure 10. Typical RF2 Spurious Response at 2.1 GHz
with 1 MHz Phase Detector Update Frequency
Rev. 1.0
13
Si2200
-60
-70
Phase Noise (dBc/Hz)
-80
-90
-100
-110
-120
-130
-140
1.E+02
1.E+03
1.E+04
1.E+05
Offset Frequency (Hz)
Typical IF Phase Noise at 800 MHz
Figure 11. Typical IF Phase Noise at 800 MHz
with 1 MHz Phase Detector Update Frequency
Figure 12. IF Spurious Response at 800 MHz
with 1 MHz Phase Detector Update Frequency
14
Rev. 1.0
1.E+06
Si2200
VDD
30 Ω ∗
0.022µF
From
System
560 pF
LMATCH
Controller
2
3
4
22
GND
23
IFOUT
24
VDDI
25
SEN
27
26
SCLK
GND
SDATA
1
GND
28
IFOUT
GND
GND
IFLB
NC
IFLA
Si2200
GND
GND
21
Printed Trace
Inductor or
Chip Inductor
20
19
18
VDD 0.022µF
5
6
NC
VDDD
GND
GND
17
16
0.022µF
15
GND
XIN
External
Clock
14
PWDN
13
AUXOUT
12
VDDR
11
10
GND
9
8
GND
GND
RFOUT
560 pF
7
PWDN
VDD
560 pF
AUXOUT
RFOUT
*Add 30 Ω series resistor if using IF output divide values 2, 4, or 8 and fCEN < 600 MHz.
Figure 13. Typical Application Circuit: Si2200
Rev. 1.0
15
Si2200
2. Functional Description
The Si2200 is a monolithic integrated circuit that
performs IF and dual-band RF synthesis for many
wireless communications applications. This integrated
circuit (IC), along with a minimum number of external
components, is all that is necessary to implement the
frequency synthesis function in applications, such as
satellite radio.
The Si2200 has three complete phase-locked loops
(PLLs) with integrated voltage-controlled oscillators
(VCOs). The low phase noise of the VCOs makes the
Si2200 suitable for use in demanding wireless
communications applications. Also integrated are phase
detectors, loop filters, and reference and output
frequency dividers. The IC is programmed through a
three-wire serial interface.
Two PLLs are provided for RF synthesis. These RF
PLLs are multiplexed so that only one PLL is active at a
given time (as determined by the setting of an internal
register). The active PLL is the last one written. The
center frequency of the VCO in each PLL is set by the
internal bond wire inductance within the package.
Inaccuracies in these inductances are compensated for
by the self-tuning algorithm. The algorithm is run
following power-up or following a change in the
programmed output frequency.
The RF PLLs contain a divide-by-2 circuit before the Ndivider. As a result, the phase detector frequency (fφ) is
equal to half the desired channel spacing. For example,
for a 200 kHz channel spacing, fφ would equal 100 kHz.
The IF PLL does not contain the divide-by-2 circuit
before the N-divider. In this case, fφ is equal to the
desired channel spacing. Each RF VCO is optimized for
a particular frequency range. The RF1 VCO is optimized
to operate from 2.3 to 2.5 GHz, while the RF2 VCO is
optimized to operate between 2.025 and 2.3 GHz.
One PLL is provided for IF synthesis. The center
frequency of this circuit’s VCO is set by an external
inductance. The PLL can adjust the IF output frequency
by ±5% of the VCO center frequency. Inaccuracies in
the value of the external inductance are compensated
for by the Si2200’s proprietary self-tuning algorithm.
This algorithm is initiated each time the PLL is poweredup (by either the PWDN pin or by software) and/or each
time a new output frequency is programmed. The IF
VCO can have its center frequency set as low as
526 MHz and as high as 952 MHz. An IF output divider
is provided to divide down the IF output frequencies, if
needed. The divider is programmable and capable of
dividing by 1, 2, 4, or 8.
16
In order to accommodate designs running at XIN
frequencies greater than 25 MHz, the Si2200 includes a
programmable divide-by-2 option (XINDIV2 in
Register 0, D6) on the XIN input. By enabling this
option, the Si2200 can accept a range of TCXO
frequencies from 25 to 50 MHz.
The unique PLL architecture used in the Si2200
produces settling (lock) times that are comparable in
speed to fractional-N architectures without suffering the
high phase noise or spurious modulation effects often
associated with those designs.
2.1. Serial Interface
A timing diagram for the serial interface is shown in
Figure 2 on page 7. Figure 3 on page 7 shows the
format of the serial word.
The Si2200 is programmed serially with 22-bit words
comprised of 18-bit data fields and 4-bit address fields.
When the serial interface is enabled (i.e., when SEN is
low) data and address bits on the SDATA pin are
clocked into an internal shift register on the rising edge
of SCLK. Data in the shift register is then transferred on
the rising edge of SEN into the internal data register
addressed in the address field. The serial interface is
disabled when SEN is high.
Table 11 on page 21 summarizes the data register
functions and addresses. It is not necessary (although it
is permissible) to clock into the internal shift register any
leading bits that are “don’t cares.”
2.2. Setting the IF VCO Center Frequencies
The IF PLL can adjust its output frequency ±5% from
the center frequency as established by the value of an
external inductance connected to the VCO. The RF1
and RF2 PLLs have fixed operating ranges due to the
inductance set by the internal bond wires. Each center
frequency is established by the value of the total
inductance (internal and/or external) connected to the
respective VCO. Manufacturing tolerance of ±10% for
the external inductor is acceptable for the IF VCO. The
Si2200 will compensate for inaccuracies by executing a
self-tuning algorithm following PLL power-up or
following a change in the programmed output
frequency.
Because the total tank inductance is in the low nH
range, the inductance of the package needs to be
considered in determining the correct external
inductance. The total inductance (LTOT) presented to
the IF VCO is the sum of the external inductance (LEXT)
and the package inductance (LPKG). The IF VCO has a
nominal capacitance (CNOM) in parallel with the total
inductance, and the center frequency is as follows:
Rev. 1.0
Si2200
1
1
f CEN = ----------------------------------------------- = -----------------------------------------------------------------------2π L TOT × C NOM
2π ( L PKG + L EXT ) × C NOM
Table 6 summarizes the characteristics of the IF VCO.
Table 6. Si2200-GM VCO Characteristics
VCO
IF
FCEN
Range
(MHz)
Min
Max
526
952
CNOM LPKG
(pF) (nH)
6.5
2.1
LEXT Range
(nH)
Min
Max
2.2
12.0
IFLA
2
The Si2200’s self-tuning algorithm will compensate for
component value errors at any temperature within the
specified temperature range. However, the ability of the
PLL to compensate for drift in component values that
occur after self-tuning is limited. For external
inductances with temperature coefficients around
±150 ppm/°C, the PLL will be able to maintain lock for
changes in temperature of approximately ±30 °C.
LEXT
LPKG
2
The self-tuning algorithm is initiated immediately
following power-up of a PLL or, if the PLL is already
powered, following a change in its programmed output
frequency. This algorithm attempts to tune the VCO so
that its free-running frequency is near the desired output
frequency. In so doing, the algorithm will compensate
for manufacturing tolerance errors in the value of the
external inductance connected to the IF VCO. It will also
reduce the frequency error for which the PLL must
correct to get the precise desired output frequency. The
self-tuning algorithm will leave the VCO oscillating at a
frequency in error by somewhat less than 1% of the
desired output frequency.
After self-tuning, the PLL controls the VCO oscillation
frequency. The PLL will complete frequency locking,
eliminating any remaining frequency error. Thereafter, it
will maintain frequency-lock, compensating for effects
caused by temperature and supply voltage variations.
Si4136XM
LPKG
2.3. Self-Tuning Algorithm
IFLB
Figure 14. Example of IF External Inductor
As a design example, suppose synthesizing
frequencies in a 30 MHz band between 735 and
765 MHz is desired. The center frequency should be
defined as midway between the two extremes, or
750 MHz. The PLL will be able to adjust the VCO output
frequency ±5% of the center frequency, or ±37.5 MHz of
750 MHz (i.e., from approximately 713 to 788 MHz).
The IF VCO has a CNOM of 6.5 pF, and a 6.9 nH
inductance (correct to two digits) in parallel with this
capacitance will yield the desired center frequency. An
external inductance of 4.8 nH should be connected
between IFLA and IFLB, as shown in Figure 14. This, in
addition to 2.1 nH of package inductance, will present
the correct total inductance to the VCO. In
manufacturing, the external inductance can vary ±10%
of its nominal value, and the Si2200 will correct for the
variation with the self-tuning algorithm.
For more information on designing the external trace
inductor, please refer to “AN31: Inductor Design for the
Si41xx Synthesizer Family”.
Applications where the PLL is regularly powered-down
or the frequency is periodically reprogrammed minimize
or eliminate the potential effects of temperature drift
because the VCO is re-tuned in either case. In
applications where the ambient temperature can drift
substantially after self-tuning, it may be necessary to
monitor the lock-detect bar (LDETB) signal on the
AUXOUT pin to determine whether a PLL is about to
run out of locking capability. (See “Auxiliary Output
(AUXOUT)” for how to select LDETB.) The LDETB
signal will be low after self-tuning has completed but will
rise when either the IF or RF PLL nears the limit of its
compensation range. (LDETB will also be high when
either PLL is executing the self-tuning algorithm.) The
output frequency will still be locked when LDETB goes
high, but the PLL will eventually lose lock if the
temperature continues to drift in the same direction.
Therefore, if LDETB goes high both the IF and RF PLLs
should promptly be retuned by initiating the self-tuning
algorithm.
Rev. 1.0
17
Si2200
2.4. Output Frequencies
Table 7. Gain Values (Register 1)
The IF and RF output frequencies are set by
programming the R- and N-Divider registers. Each PLL
has its own R and N registers so that each can be
programmed independently. Programming either the Ror N-Divider register for RF1 or RF2 automatically
selects the associated output.
When XINDIV2 = 0, the reference frequency on the XIN
pin is divided by R, and this signal is the input to the
PLL’s phase detector. The other input to the phase
detector is the PLL’s VCO output frequency divided by
2N for the RF PLLs or N for the IF PLL. After an initial
transient:
KP Bits
Relative P.D.
Gain
10
1/4
11
1/8
In general, a higher phase detector gain will decrease
in-band phase noise and increase the speed of the PLL
transient until the point at which stability begins to be
compromised. The optimal gain depends on N. Table 8
lists recommended settings for different values of N.
Table 8. Optimal KP Settings
Equation 1. fOUT = (2N/R) " fREF (for the RF
PLLs)
Equation 2. fOUT = (N/R) " fREF (for the IF PLL).
N
RF1
KP1<1:0>
RF2
KP2<1:0>
IF
KPI<1:0>
The integers R are set by programming the RF1 RDivider register (Register 6), the RF2 R-Divider register
(Register 7) and the IF R-Divider register (Register 8).
≤2047
00
00
00
2048 to 4095
00
01
01
The integers N are set by programming the RF1 NDivider register (register 3), the RF2 N-Divider register
(Register 4), and the IF N-Divider register (Register 5).
4096 to 8191
01
10
10
8192 to 16383
10
11
11
If the optional divide-by-2 circuit on the XIN pin is
enabled (XINDIV2 = 1), after an initial transient:
≥16384
11
11
11
fOUT = (N/R) " fREF (for the RF PLLs)
fOUT = (N/2R) " fREF (for the IF PLL).
Each N-Divider is implemented as a conventional highspeed divider. That is, it consists of a dual-modulus
prescaler, a swallow counter, and a lower speed
synchronous counter. However, the control of these
sub-circuits is handled automatically. Only the
appropriate N value should be programmed.
2.5. PLL Loop Dynamics
The transient response for each PLL is determined by
its phase detector update rate fφ (equal to fREF/R) and
the phase detector gain programmed for each RF1,
RF2, or IF synthesizer. (See Register 1.) Four different
settings for the phase detector gain are available for
each PLL. The highest gain is programmed by setting
the two phase detector gain bits to 00 and the lowest by
setting the bits to 11. The values of the available gains,
relative to the highest gain, are listed in Table 7.
Table 7. Gain Values (Register 1)
18
KP Bits
Relative P.D.
Gain
00
1
01
1/2
The VCO gain and loop filter characteristics are not
programmable.
The settling time for each PLL is directly proportional to
its phase detector update period Tφ (Tφ equals 1/fφ).
During the first 13 update periods, the Si2200 executes
the self-tuning algorithm. Thereafter, the PLL controls
the output frequency. Because of the unique
architecture of the Si2200 PLLs, the time required to
settle the output frequency to 0.1 ppm error is only
about 25 update periods. Thus, the total time after
power-up or a change in programmed frequency until
the synthesized frequency is well settled—including
time for self-tuning—is around 40 update periods.
Note: This settling time analysis holds for fφ ≤ 500 kHz. For
fφ > 500 kHz, the settling time can be a maximum of
100 µs as specified in Table 5.
2.6. RF and IF Outputs (RFOUT and IFOUT)
The RFOUT and IFOUT pins are driven by amplifiers
that buffer the RF VCOs and IF VCO, respectively. The
RF output amplifier receives its input from either the
RF1 or RF2 VCO, depending upon which R- or NDivider register was last written. For example,
programming the N-Divider register for RF1
automatically selects the RF1 VCO output.
Rev. 1.0
Si2200
Figure 13 on page 15 shows an application diagram for
the Si2200. The RF output signal must be ac-coupled to
its load through a capacitor.
For IF frequencies greater than 500 MHz, a matching
network is required in order to drive a 50 Ω load. See
Figure 15 below. The value of LMATCH can be
determined by Table 9.
Typical values range between 8 nH and 40 nH.
>500 pF
IFO UT
L MATCH
400
350
LPWR=1
LPWR=0
300
Output Voltage (mVrms)
The IFOUT pin must also be ac-coupled to its load
through a capacitor. The IF output level is dependent
upon the load. Figure 17 displays the output level
versus load resistance. For resistive loads greater than
500 Ω, the output level saturates, and the bias currents
in the IF output amplifier are higher than they need to
be. The LPWR bit in the Main Configuration register
(Register 0) can be set to 1 to reduce the bias currents
and, therefore, reduce the power dissipated by the IF
amplifier. For loads less than 500 Ω, LPWR should be
set to 0 to maximize the output level.
450
250
200
150
100
50
0
0
200
400
600
800
1000
1200
Load Resistance (Ω)
Figure 17. Typical IF Output Voltage vs.
Load Resistance at 550 MHz
2.7. Reference Frequency Amplifier
The Si2200 provides a reference frequency amplifier. If
the driving signal has CMOS levels, it can be connected
directly to the XIN pin. Otherwise, the reference
frequency signal should be ac coupled to the XIN pin
through a 560 pF capacitor.
2.8. Powerdown Modes
50 Ω
Table 10 summarizes the powerdown functionality. The
Si2200 can be powered down by taking the PWDN pin
low or by setting bits in the Powerdown register
(Register 2). When the PWDN pin is low, the Si2200 will
be powered down regardless of the Powerdown register
settings. When the PWDN pin is high, power
management is under control of the Powerdown register
bits.
Figure 15. IF Frequencies > 500 MHz
Table 9. LMATCH Values
Frequency
LMATCH
500–600 MHz
40 nH
600–800 MHz
27 nH
800–1 GHz
18 nH
For frequencies less than 500 MHz, the IF output buffer
can directly drive a 200 Ω resistive load or higher. For
resistive loads greater than 500 Ω (f < 500 MHz) the
LPWR bit can be set to reduce the power consumed by
the IF output buffer. See Figure 16 below.
The IF and RF sections of the Si2200 circuitry can be
individually powered down by setting the Powerdown
register bits, PDIB and PDRB, low. The reference
frequency amplifier will also be powered up if either the
PDRB or PDIB bits are high. Also, setting the
AUTOPDB bit to 1 in the Main Configuration register
(Register 0) is equivalent to setting both bits in the
Powerdown register to 1.
The serial interface remains available and can be
written in all power-down modes.
2.9. Auxiliary Output (AUXOUT)
>500 pF
The signal appearing on AUXOUT is selected by setting
the AUXSEL bits in the Main Configuration register
(Register 0).
IFO UT
>200 Ω
Figure 16. IF Frequencies < 500 MHz
The LDETB signal can be selected by setting the
AUXSEL bits to 011. This signal can be used to indicate
that the IF or RF PLL is about to lose lock due to
excessive ambient temperature drift and should be retuned.
Rev. 1.0
19
Si2200
Table 10. Powerdown Configuration
PWDN Pin
AUTOPDB
PDIB
PDRB
IF Circuitry
RF
Circuitry
PWDN = 0
x
x
x
OFF
OFF
0
0
0
OFF
OFF
0
0
1
OFF
ON
0
1
0
ON
OFF
0
1
1
ON
ON
1
x
x
ON
ON
PWDN = 1
Note: x = don’t care.
20
Rev. 1.0
Si2200
3. Control Registers
Table 11. Register Summary
Register Name
Bit Bit Bit Bit
17 16 15 14
Bit
13
Bit
12
Bit
11
Bit Bit Bit Bit
10 9
8
7
Bit
6
IFDIV
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Bit
5
0
Main
Configuration
0
0
0
0
1
Phase
Detector
Gain
0
0
0
0
0
2
Powerdown
0
0
0
0
0
3
RF1 N
Divider
4
RF2 N
Divider
0
5
IF N Divider
0
0
6
RF1 R
Divider
0
0
0
0
0
RRF1
7
RF2 R
Divider
0
0
0
0
0
RRF2
8
IF R Divider
0
0
0
0
0
RIF
9
Reserved
AUXSEL
XIN LPWR
DIV2
Bit
4
Bit
3
Bit
2
Bit
1
Bit
0
0
AUTO
PDB
0
1
0
KPI
0
KP2
0
0
KP1
0
PDIB
PDRB
NRF1
NRF2
NIF
.
.
.
15
Reserved
Note: Registers 9–15 are reserved. Writes to these registers may result in unpredictable behavior.
Rev. 1.0
21
Si2200
Register 0. Main Configuration Address Field = A[3:0] = 0000
Bit
D17 D16 D15 D14 D13 D12 D11 D10 D9
Name
22
0
0
0
0
AUXSEL
IFDIV
1
D8
D7
D6
D5
D4
D3
D2
D1
D0
1
0
XIN
DIV2
LPWR
0
AUTO
PDB
0
1
0
Bit
Name
Function
17:14
Reserved
Program to zero.
13:12
AUXSEL
Auxiliary Output Pin Definition.
00 = Reserved.
01 = Force output low.
11 = Lock Detect (LDETB).
11:10
IFDIV
IF Output Divider
00 = IFOUT = IFVCO Frequency
01 = IFOUT = IFVCO Frequency/2
10 = IFOUT = IFVCO Frequency/4
11 = IFOUT = IFVCO Frequency/8
9:7
Reserved
Program to 110.
6
XINDIV2
XIN Divide-By-2 Mode.
0 = XIN not divided by 2.
1 = XIN divided by 2.
5
LPWR
4
Reserved
Program to zero.
3
AUTOPDB
Auto Powerdown
0 = Software powerdown is controlled by Register 2.
1 = Equivalent to setting all bits in Register 2 = 1.
2
Reserved
Program to zero.
1
Reserved
Program to one.
0
Reserved
Program to zero.
Output Power-Level Settings for IF Synthesizer Circuit.
0 = RLOAD < 500 Ω—normal power mode.
1 = RLOAD ≥ 500 Ω—low power mode.
Rev. 1.0
Si2200
Register 1. Phase Detector Gain Address Field (A[3:0]) = 0001
Bit
Name
D17 D16 D15 D14 D13 D12 D11 D10
0
0
0
0
0
0
0
D9
D8
D7
D6
0
0
0
0
0
Bit
Name
17:6
Reserved
5:4
KPI
IF Phase Detector Gain Constant.
N Value
KPI
<2048
00
2048–4095
01
4096–8191
10
>8191
11
3:2
KP2
RF2 Phase Detector Gain Constant.
N Value
KP2
<2048
00
2048–4095
01
4096–8191
10
>8191
11
1:0
KP1
RF1 Phase Detector Gain Constant.
N Value
KP1
<4096
00
4096–8191
01
8192–16383
10
>16383
11
D5
D4
KPI
D3
D2
KP2
D1
D0
KP1
Function
Program to zero.
Rev. 1.0
23
Si2200
Register 2. Powerdown Address Field (A[3:0]) = 0010
Bit
D17 D16 D15 D14 D13 D12 D11 D10 D9
Name
0
0
0
0
0
0
0
0
D8
D7
D6
D5
D4
D3
D2
0
0
0
0
0
0
0
0
Bit
Name
17:2
Reserved
1
PDIB
Powerdown IF Synthesizer.
0 = IF synthesizer powered down.
1 = IF synthesizer on.
0
PDRB
Powerdown RF Synthesizer.
0 = RF synthesizer powered down.
1 = RF synthesizer on.
D1
D0
PDIB PDRB
Function
Program to zero.
Register 3. RF1 N Divider Address Field (A[3:0]) = 0011
Bit
D17 D16 D15 D14 D13 D12 D11 D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
D5
D4
D3
D2
D1
D0
NRF1
Name
Bit
Name
17:0
NRF1
Function
N Divider for RF1 Synthesizer.
NRF1 ≥ 992.
Register 4. RF2 N Divider Address Field = A[3:0] = 0100
Bit
Name
24
D17 D16 D15 D14 D13 D12 D11 D10
D9
0
D8
D7
D6
NRF2
Bit
Name
17
Reserved
16:0
NRF2
Function
Program to zero.
N Divider for RF2 Synthesizer.
NRF2 ≥ 240.
Rev. 1.0
Si2200
Register 5. IF N Divider Address Field (A[3:0]) = 0101
Bit
D17 D16 D15 D14 D13 D12 D11 D10
0
Name
D9
D8
0
D7
D6
D5
D4
D3
D2
D1
D0
D4
D3
D2
D1
D0
D4
D3
D2
D1
D0
NIF
Bit
Name
17:16
Reserved
15:0
NIF
Function
Program to zero.
N Divider for IF Synthesizer.
NIF ≥ 56.
Register 6. RF1 R Divider Address Field (A[3:0]) = 0110
Bit
Name
D17 D16 D15 D14 D13 D12 D11 D10
0
0
0
0
D9
D8
0
Reserved
12:0
RRF1
D6
D5
RRF1
Name
17:13
D7
Function
Program to zero.
R Divider for RF1 Synthesizer.
RRF1 can be any value from 7 to 8189 if KP1 = 00
8 to 8189 if KP1 = 01
10 to 8189 if KP1 = 10
14 to 8189 if KP1 = 11
Register 7. RF2 R Divider Address Field (A[3:0]) = 0111
Bit
Name
D17 D16 D15 D14 D13 D12 D11 D10
0
0
0
Bit
Name
17:13
Reserved
12:0
RRF2
0
D9
0
D8
D7
D6
D5
RRF2
Function
Program to zero.
R Divider for RF2 Synthesizer.
RRF2 can be any value from 7 to 8189 if KP2 = 00
8 to 8189 if KP2 = 01
10 to 8189 if KP2 = 10
14 to 8189 if KP2 = 11
Rev. 1.0
25
Si2200
Register 8. IF R Divider Address Field (A[3:0]) = 1000
Bit
Name
26
D17 D16 D15 D14 D13 D12 D11 D10
0
0
0
Bit
Name
17:13
Reserved
12:0
RIF
0
D9
0
D8
D7
D6
D5
RIF
Function
Program to zero.
R Divider for IF Synthesizer.
RIF can be any value from 7 to 8189 if KP1 = 00
8 to 8189 if KP1 = 01
10 to 8189 if KP1 = 10
14 to 8189 if KP1 = 11
Rev. 1.0
D4
D3
D2
D1
D0
Si2200
GND
IFOUT
VDDI
SEN
SCLK
SDATA
GND
4. Pin Descriptions: Si2200
28 27 26 25 24 23 22
Pin Number(s)
Name
GND
1
21
GND
GND
2
20
IFLB
NC
3
19
IFLA
GND
4
18
GND
GND
17
VDDD
6
16
GND
GND
7
15
XIN
GND
PWDN
VDDR
10 11 12 13 14
AUXOUT
9
RFOUT
8
GND
5
GND
NC
GND
Description
1, 2, 4, 6, 7–9, 14, GND
16, 18, 21, 22, 28
Common ground
3, 5
NC
No connect
10
RFOUT
Radio frequency (RF) output of the selected RF VCO
11
VDDR
Supply voltage for the RF analog circuitry
12
AUXOUT
Auxiliary output
13
PWDN
Powerdown input pin
15
XIN
Reference frequency amplifier input
17
VDDD
Supply voltage for digital circuitry
19, 20
IFLA, IFLB
Pins for inductor connection to IF VCO
23
IFOUT
Intermediate frequency (IF) output of the IF VCO
24
VDDI
Supply voltage for IF analog circuitry
25
SEN
Enable serial port input
26
SCLK
Serial clock input
27
SDATA
Serial data input
Rev. 1.0
27
Si2200
5. Ordering Guide
Ordering Part Number
Description
Temp. Range
Si2200-X-GM
2.5 GHz/2.3 GHz/IF OUT, Lead-free, QFN
–40 to 85 oC
Notes:
1. Add an “R” at the end of the device to denote tape and reel option; 2500 quantity per reel.
2. “X” denotes product revision.
28
Rev. 1.0
Si2200
6. Package Outline: Si2200-GM
Figure 18 illustrates the package details for the Si2200-GM. Table 12 lists the values for the dimensions shown in
the illustration.
Figure 18. 28-Pin Quad Flat No-Lead (QFN)
Table 12. Si2200-GM Package Diagram Dimensions
Dimension
Min.
Nom.
Max.
A
0.80
0.85
0.90
A1
0.00
0.01
0.05
b
0.18
0.23
0.30
D
D2
5.00 BSC.
2.55
2.70
e
0.50 BSC.
E
5.00 BSC.
2.85
E2
2.55
2.70
2.85
L
0.50
0.60
0.70
Q
—
—
12°
aaa
—
—
0.10
bbb
—
—
0.10
ccc
—
—
0.05
ddd
—
—
0.10
Rev. 1.0
29
Si2200
CONTACT INFORMATION
Silicon Laboratories Inc.
4635 Boston Lane
Austin, TX 78735
Tel: 1+(512) 416-8500
Fax: 1+(512) 416-9669
Toll Free: 1+(877) 444-3032
Email: [email protected]
Internet: www.silabs.com
The information in this document is believed to be accurate in all respects at the time of publication but is subject to change without notice.
Silicon Laboratories assumes no responsibility for errors and omissions, and disclaims responsibility for any consequences resulting from
the use of information included herein. Additionally, Silicon Laboratories assumes no responsibility for the functioning of undescribed features
or parameters. Silicon Laboratories reserves the right to make changes without further notice. Silicon Laboratories makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Silicon Laboratories assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Silicon Laboratories products are not designed, intended, or authorized for use in applications intended to
support or sustain life, or for any other application in which the failure of the Silicon Laboratories product could create a situation where personal injury or death may occur. Should Buyer purchase or use Silicon Laboratories products for any such unintended or unauthorized application, Buyer shall indemnify and hold Silicon Laboratories harmless against all claims and damages.
Silicon Laboratories and Silicon Labs are trademarks of Silicon Laboratories Inc.
Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders.
30
Rev. 1.0