PIMZ2; PUMZ2 NPN/PNP general-purpose double transistors Rev. 05 — 24 November 2004 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose double transistors. Table 1: Product overview Type number Package Configuration Philips JEITA PIMZ2 SOT457 SC-74 NPN/PNP double transistors PUMZ2 SOT363 SC-88 NPN/PNP double transistors 1.2 Features ■ Simplified circuit design ■ Reduced component count ■ Reduced pick and place costs. 1.3 Applications ■ General-purpose switching and amplification. 1.4 Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 50 V IC collector current (DC) - - 150 mA PIMZ2; PUMZ2 Philips Semiconductors NPN/PNP general-purpose double transistors 2. Pinning information Table 3: Pinning Pin Description Simplified outline Symbol PIMZ2 (SOT457) 1 collector TR2 2 emitter TR2 3 collector TR1 4 emitter TR1 5 base TR1 6 base TR2 6 5 4 6 5 4 TR1 1 2 TR2 3 SOT457 1 2 3 sym082 PUMZ2 (SOT363) 1 emitter TR1 2 base TR1 3 base TR2 4 collector TR2 5 emitter TR2 6 collector TR1 6 5 4 6 5 4 TR2 TR1 1 2 3 SOT363 1 2 3 sym083 3. Ordering information Table 4: Ordering information Type number Package Name Description Version PIMZ2 SC-74 plastic surface mounted package; 6 leads SOT457 PUMZ2 SC-88 plastic surface mounted package; 6 leads SOT363 4. Marking Table 5: Marking codes Type number Marking code [1] PIMZ2 M6 PUMZ2 GZ* [1] * = -: made in Hong Kong * = t: made in Malaysia * = W: made in China 9397 750 13966 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 05 — 24 November 2004 2 of 9 PIMZ2; PUMZ2 Philips Semiconductors NPN/PNP general-purpose double transistors 5. Limiting values Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 7 V IC collector current (DC) - 150 mA ICM peak collector current - 200 mA IBM peak base current - 100 mA Ptot total power dissipation - 200 mW Tamb ≤ 25 °C SOT457 [1] SOT363 [1] - 180 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Per device total power dissipation Ptot [1] Tamb ≤ 25 °C SOT457 [1] - 300 mW SOT363 [1] - 300 mW Device mounted on an FR4 printed-circuit board. 6. Thermal characteristics Table 7: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor Rth(j-a) thermal resistance from junction to ambient Tamb ≤ 25 °C SOT457 [1] - - 625 K/W SOT363 [1] - - 694 K/W SOT457 [1] - - 417 K/W SOT363 [1] - - 417 K/W Per device Rth(j-a) [1] thermal resistance from junction to ambient Tamb ≤ 25 °C Device mounted on an FR4 printed-circuit board. 9397 750 13966 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 05 — 24 November 2004 3 of 9 PIMZ2; PUMZ2 Philips Semiconductors NPN/PNP general-purpose double transistors 7. Characteristics Table 8: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor with negative polarity; unless otherwise specified ICBO collector-base cut-off current VCB = 60 V; IE = 0 A - - 100 nA VCB = 60 V; IE = 0 A; Tj = 150 °C - - 50 µA nA IEBO emitter-base cut-off current VEB = 7 V; IC = 0 A - - 100 hFE DC current gain VCE = 6 V; IC = 1 mA 120 250 560 TR1 (PNP) VCEsat collector-emitter saturation voltage IC = −50 mA; IB = −5 mA - - −500 mV fT transition frequency IE = −2 mA; VCE = −12 V; f = 100 MHz - 190 - MHz Cc collector capacitance IE = ie = 0 A; VCB = −12 V; f = 1 MHz - 2.3 5 pF IC = 50 mA; IB = 5 mA - - 250 mV TR2 (NPN) VCEsat collector-emitter saturation voltage fT transition frequency IE = 2 mA; VCE = 12 V; f = 100 MHz 100 - - MHz Cc collector capacitance IE = ie = 0 A; VCB = 12 V; f = 1 MHz - - 3 pF 9397 750 13966 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 05 — 24 November 2004 4 of 9 PIMZ2; PUMZ2 Philips Semiconductors NPN/PNP general-purpose double transistors 8. Package outline Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC SOT457 JEDEC JEITA SC-74 EUROPEAN PROJECTION ISSUE DATE 01-05-04 04-11-08 Fig 1. Package outline SOT457 (SC-74) 9397 750 13966 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 05 — 24 November 2004 5 of 9 PIMZ2; PUMZ2 Philips Semiconductors NPN/PNP general-purpose double transistors Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC SOT363 JEDEC JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 04-11-08 Fig 2. Package outline SOT363 (SC-88) 9397 750 13966 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 05 — 24 November 2004 6 of 9 PIMZ2; PUMZ2 Philips Semiconductors NPN/PNP general-purpose double transistors 9. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PIMZ2_PUMZ2_5 20041124 Product data sheet - 9397 750 13966 PIMZ2_PUMZ2_4 Modifications: • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. • • Table 3 PUMZ2 symbol drawing amended Table 5 PIMZ2 marking code and PUMZ2 table note amended PIMZ2_PUMZ2_4 20031217 Product specification - 9397 750 12385 PIMZ2_2 PIMZ2_2 20030714 Product specification - 9397 750 11659 PIMZ2_1 PIMZ2_1 20030602 Objective specification - 9397 750 11456 - 9397 750 13966 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 05 — 24 November 2004 7 of 9 PIMZ2; PUMZ2 Philips Semiconductors NPN/PNP general-purpose double transistors 10. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions 12. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 13966 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 05 — 24 November 2004 8 of 9 PIMZ2; PUMZ2 Philips Semiconductors NPN/PNP general-purpose double transistors 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Quick reference data. . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 1 2 2 2 3 3 4 5 7 8 8 8 8 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 24 November 2004 Document number: 9397 750 13966 Published in The Netherlands