PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor Rev. 01 — 3 May 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E. 1.2 Features ■ ■ ■ ■ ■ Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications ■ ■ ■ ■ ■ DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit open base - - −40 V VCEO collector-emitter voltage IC collector current (DC) - - −500 mA ICM peak collector current - - −1 A RCEsat collector-emitter saturation resistance - 440 700 mΩ [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. IC = −500 mA; IB = −50 mA [1] PBSS3540E Philips Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 2. Pinning information Table 2: Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Symbol 3 3 1 1 2 2 sym013 3. Ordering information Table 3: Ordering information Type number PBSS3540E Package Name Description Version SC-75 plastic surface mounted package; 3 leads SOT416 4. Marking Table 4: Marking codes Type number Marking code PBSS3540E 1T 9397 750 15062 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 May 2005 2 of 11 PBSS3540E Philips Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −40 V VCEO collector-emitter voltage open base - −40 V VEBO emitter-base voltage open collector - −6 V IC collector current (DC) - −500 mA ICM peak collector current - −1 A IBM peak base current Ptot total power dissipation Tamb ≤ 25 °C - −100 mA [1] - 150 mW [2] - 250 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 006aaa412 300 Ptot (mW) (1) 200 (2) 100 0 0 40 80 120 160 Tamb (°C) (1) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, standard footprint Fig 1. Power derating curves 9397 750 15062 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 May 2005 3 of 11 PBSS3540E Philips Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Rth(j-a) Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 833 K/W [2] - - 500 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 006aaa413 103 duty cycle = 1 Zth(j-a) (K/W) 0.5 0.33 102 0.75 0.2 0.1 0.05 0.02 10 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 t p (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 15062 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 May 2005 4 of 11 PBSS3540E Philips Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −40 V; IE = 0 A - - −100 nA VCB = −40 V; IE = 0 A; Tj = 150 °C - - −50 µA VEB = −5 V; IC = 0 A - - −100 nA IEBO emitter-base cut-off current hFE DC current gain VCEsat collector-emitter saturation voltage VCE = −2 V; IC = −10 mA 200 - - VCE = −2 V; IC = −100 mA [1] 150 - - VCE = −2 V; IC = −500 mA [1] 40 - - IC = −10 mA; IB = −0.5 mA - - −50 mV IC = −100 mA; IB = −5 mA - - −130 mV IC = −200 mA; IB = −10 mA - - −200 mV IC = −500 mA; IB = −50 mA [1] - - −350 mV - 440 700 mΩ - - −1.2 V RCEsat collector-emitter saturation resistance IC = −500 mA; IB = −50 mA [1] VBEsat base-emitter saturation voltage IC = −500 mA; IB = −50 mA [1] VBEon base-emitter turn-on voltage VCE = −2 V; IC = −100 mA - - −1.1 V fT transition frequency VCE = −5 V; IC = −100 mA; f = 100 MHz 100 300 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - - 10 pF [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 9397 750 15062 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 May 2005 5 of 11 PBSS3540E Philips Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 006aaa388 600 VBE (mV) −900 (1) hFE 400 006aaa389 −1100 (1) (2) −700 (2) (3) −500 (3) 200 −300 0 −10−1 −1 −10 −102 −103 −100 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) VCE = −2 V VCE = −2 V (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 100 °C Fig 3. DC current gain as a function of collector current; typical values 006aaa390 −1 Fig 4. Base-emitter voltage as a function of collector current; typical values 006aaa391 −1 VCEsat (mV) VCEsat (mV) −10−1 −10−1 (1) (1) (2) (3) (2) (3) −10−2 −10−1 −1 −10 −102 −103 −10−2 −10−1 −1 IC (mA) −102 −103 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values 9397 750 15062 Product data sheet −10 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 May 2005 6 of 11 PBSS3540E Philips Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 006aaa392 −1.1 VBEsat (V) −0.9 006aaa393 103 RCEsat (Ω) (1) 102 (2) −0.7 (3) 10 (1) (2) (3) −0.5 1 −0.3 −0.1 −10−1 −1 −10 −102 −103 10−1 −10−1 −1 −10 −102 IC (mA) IC/IB = 20 IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = −55 °C Fig 7. Base-emitter saturation voltage as a function of collector current; typical values 006aaa394 −1 IB (mA) = −30 IC −27 (A) −24 −21 −0.8 −18 −103 IC (mA) Fig 8. Collector-emitter saturation resistance as a function of collector current; typical values 006aaa395 103 RCEsat (Ω) −15 102 −12 −9 −0.6 −6 10 −3 −0.4 (1) (2) 1 −0.2 0 0 −1 −2 −3 −4 −5 VCE (V) Tamb = 25 °C 10−1 −10−1 (3) −1 −10 −102 −103 IC (mA) Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 9. Collector current as a function of collector-emitter voltage; typical values Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values 9397 750 15062 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 May 2005 7 of 11 PBSS3540E Philips Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 8. Package outline 0.95 0.60 1.8 1.4 3 0.45 0.15 1.75 0.9 1.45 0.7 1 2 0.30 0.15 0.25 0.10 1 Dimensions in mm 04-11-04 Fig 11. Package outline SOT416 (SC-75) 9. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PBSS3540E [1] Package SOT416 Description Packing quantity 4 mm pitch, 8 mm tape and reel 3000 10000 -115 -135 For further information and the availability of packing methods, see Section 16. 10. Soldering 2.20 0.60 1.10 0.70 solder lands 2 solder resist 3 2.00 0.85 1.50 1 0.50 (3x) occupied area solder paste MSA438 0.60 (3x) 1.90 Reflow soldering is the only recommended soldering method. Dimensions in mm. Fig 12. Reflow soldering footprint 9397 750 15062 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 May 2005 8 of 11 PBSS3540E Philips Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 11. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PBSS3540E_1 20050503 Product data sheet - 9397 750 15062 - 9397 750 15062 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 May 2005 9 of 11 PBSS3540E Philips Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 12. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 15. Trademarks 14. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 15062 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 May 2005 10 of 11 PBSS3540E Philips Semiconductors 40 V, 500 mA PNP low VCEsat (BISS) transistor 17. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information . . . . . . . . . . . . . . . . . . . . 10 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 3 May 2005 Document number: 9397 750 15062 Published in The Netherlands