PD-94150B HFB25HJ20 Ultrafast, Soft Recovery Diode FRED Features • • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount IF(AV) = 25A trr = 35ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Absolute Maximum Ratings Parameter VR IF(AV) IFSM PD @ TC = 25°C TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, Q TC = 106°C Single Pulse Forward Current, R TC = 25°C Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 200 25 150 70 -55 to +150 V A W °C Note: Q D.C. = 50% rect. wave R 1/2 sine wave, 60 Hz , P.W. = 8.33 ms CASE STYLE SMD-0.5 www.irf.com CATHODE ANODE ANODE 1 7/9/01 HFB25HJ20 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter VBR VF Min. Typ. Max. Units — — — 1.18 V Test Conditions Cathode Anode Breakdown Voltage Forward Voltage 200 — IR = 100µA IF = 25A, TJ =-55°C See Fig. 1 — — 0.94 — — 1.07 — — 1.19 IF = 50A, TJ = 25°C — — 0.88 IF = 25A, TJ =125°C IF = 10A, TJ = 25°C V IF = 25A, TJ = 25°C See Fig. 2 IR Reverse Leakage Current See Fig. 2 — — — — 10 250 µA µA VR = VR Rated VR = VR Rated, TJ = 125°C CT Junction Capacitance, See Fig. 3 — — 78 pF VR = 200V LS Series Inductance — 4.8 — nH Measured from center of cathod pad to center of anode pad Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter t rr trr1 trr2 IRRM1 IRRM2 Q rr1 Q rr2 di(rec)M/dt1 di(rec)M/dt2 Min. Reverse Recovery Time Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb — — — — — — — — — Typ. Max. Units — 28 43 3.9 6.1 61 146 820 1560 35 — — — — — — — — Test Conditions ns ns IF = 1.0A,VR = 30V, dif/dt = 200A/µs TJ = 25°C See Fig. TJ = 125°C 5 IF = 25A TJ = 25°C See Fig. A A TJ = 125°C 6 VR = 160V TJ = 25°C See Fig. nC TJ = 125°C 7 dif/dt = 200A/µs nC TJ = 25°C See Fig. A/µs 8 A/µs TJ = 125°C Thermal - Mechanical Characteristics Parameter RthJC Wt 2 Junction-to-Case Weight Typ. Max. Units — 1.0 1.76 — °C/W g www.irf.com HFB25HJ20 100 10 Reverse Current - I R (µA) 100°C 75°C 0.1 0.01 25°C 0.001 0.0001 0 40 80 120 160 200 Reverse Voltage - V R (V) 10 Fig. 2 - Typical Reverse Current Vs. Reverse Voltage 1000 Tj = 125°C Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 125°C 1 Tj = 25°C Tj = -55°C T J = 25°C 100 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0 Forward Voltage Drop - V F (V) 40 80 120 160 200 Reverse Voltage - V R (V) Fig. 1 - Maximum Forward Voltage Drop Vs. Instantaneous Forward Current Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.1 0.05 t1 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics www.irf.com 3 HFB25HJ20 50 100 VR = 160V TJ = 125°C TJ = 25°C IF = 25A IRRM - ( A ) trr - ( ns ) 40 IF = 12.5A IF = 25A IF = 50A 30 IF = 50A IF = 12.5A 10 VR = 160V TJ = 125°C TJ = 25°C 20 1 100 1000 100 1000 dif / dt - ( A / µs ) dif / dt - ( A / µs ) Fig. 5 - Typical Reverse Recovery Vs. dif/dt, 1000 Fig. 6 - Typical Recovery Current Vs. dif/dt, 10000 IF = 12.5A IF = 25A di ( rec )M / dt - ( A / µs ) IF = 25A IF = 50A Qrr - ( nC ) IF = 12.5A 100 VR = 160V IF = 50A 1000 VR = 160V TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C 10 100 100 1000 dif / dt - ( A / µs ) Fig. 7 - Typical Stored Charge Vs. dif/dt 4 100 1000 dif / dt - ( A / µs ) Fig. 8 - Typical di(rec)M/dt Vs. dif/dt www.irf.com HFB25HJ20 3 t rr IF R E V E R S E R E C O V E R Y C IR C U IT tb ta 0 Q rr V R = 2 00 V 2 I RRM 4 0.5 I R R M di(rec)M /dt 0.01 Ω 0.75 I R R M L = 70µH 1 D .U .T. D d if/d t A D JU S T G 5 IR F P 2 50 S Fig. 9 - Reverse Recovery Parameter Test Circuit di f /dt 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Case Outline and Dimensions — SMD-0.5 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/01 www.irf.com 5