TOSHIBA MIG10J503

TENTATIVE
MIG10J503
TOSHIBA INTELLIGENT POWER MODULE
MIG10J503
MIG10J503 is an intelligent power module for three-phase
inverter system. The 4th generation low saturation voltage trench
gate IGBT and FRD are connected to a three-phase full bridge
type, and IC by the original high-voltage SOI(silicon-on-insulator)
process drives these directly in response to a PWM signal.
Moreover, since high-voltage level-shifter is built in high-voltage
IC, while being able to perform a direct drive without the
interface with which the upper arm IGBT is insulated, the drive
power supply of an upper arm can be driven with a bootstrap
system, and the simplification of a system is possible.
Weight:TBD g (Typ.)
Furthermore, each lower arm emitter terminal has been
independent so that detection can perform current detection at the time of vector control by current detection
resistance of a lower arm. The protection function builds in Under Voltage Protection, Short Circuit Protection, and
Over Temperature Protection. Original high thermal conduction resin is adopted as a package, and low heat
resistance is realized.
Feature
•
The 4th generation trench gate thin wafer NPT IGBT is adopted.
•
FRD is built in.
•
•
The level shift circuit by high-voltage IC is built in.
The simplification of a high side driver power supply is possible by the bootstrap system.
•
Short Circuit Protection, Over Temperature Protection , and the Power Supply Under Voltage Protection
function are built in.
•
Short Circuit Protection and Over Temperature Protection state are outputted.
•
The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at
the time of vector control.
•
Low thermal resistance by adoption of original high thermal conduction resin.
Since this product is MOS structure, it should be careful of static electricity in the case of handling.
This tentative specification is a development examination stage, and may change the contents without
a preliminary announcement.
TOSHIBA CONFIDENTIAL
1
TENTATIVE
MIG10J503
Pin Assignment
1
PGND U
2
U
3
V BB U
4
PGND V
5
V
6
Mark side
V BB V
7
PGND W
8
W
9
V CC U
FO U
IN U
IN X
SGND U
BS U
CU
V CC V
FO V
IN V
IN Y
SGND V
BS V
CV
V CC W
FO W
IN W
IN Z
SGND W
BS W
CW
V BB W
30
29
28
26
27
25
24
22
20
23
21
19
18
17
16
14
15
13
12
11
10
Marking
Toshiba logotype
JAPAN
MIG10J503
product number
※
Lot No.
TOSHIBA CONFIDENTIAL
2
TENTATIVE
MIG10J503
BLOCK DIAGRAM
3
V BB U
2
U
1
PGND U
6
V BB V
High
V CC U 30
Side
FO U
29
IN U
28
IN X
27
Under
Under
Volatge
Voltage
Driver
Low Side
Driver
SGND U 26
Over
Over
Temp
Current
BS U
25
CU
24
V CC V
23
FO V
22
Under
Under
IN V
21
Volatge
Voltage
IN Y
20
High
Side
18
CV
17
5
V
Low Side
Driver
SGND V 19
BS V
Driver
Over
Over
Temp
Current
V CC W 16
4
PGND V
9
V BB W
High
Side
FO W
15
IN W
14
IN Z
13
SGND W 12
BS W
11
CW
10
Under
Under
Volatge
Voltage
Driver
8
W
Low Side
Driver
Over
Over
Temp
Current
TOSHIBA CONFIDENTIAL
7
PGND W
3
TENTATIVE
MIG10J503
Pin Description
Pin No.
1
Symbol
Pin Description
PGND U
U-Phase Power Ground pin(Connect a current detecting
resistor between this pin and SGND U pin)
2
U
3
V BB U
4
PGND V
5
V
6
V BB V
7
PGND W
8
W
9
V BB W
U-Phase output pin
U-Phase high-voltage power supply pin
V-Phase Power Ground pin(Connect a current detecting
resistor between this pin and SGND V pin)
V-Phase output pin
V-Phase high-voltage power supply pin
W-Phase Power Ground pin(Connect a current detecting
resistor between this pin and SGND W pin)
W-Phase output pin
W-Phase high-voltage power supply pin
10
CW
W-Phase bootstrap capacitor connecting pin(-)
11
BS W
W-Phase bootstrap capacitor connecting pin(+)
12
SGND W
13
IN Z
W-Phase low -side input pin(Negative logic)
14
IN W
W-Phase high-side input pin(Negative logic)
15
FO W
W-Phase Diagnosis output pin(open drain output. Wired or
connection can be performed with the Diagnosis output pin
of other Phase.)
16
V CC W
W-Phase control power supply (+15V typ.)
17
CV
V-Phase bootstrap capacitor connecting pin(-)
18
BS V
V-Phase bootstrap capacitor connecting pin(+)
19
SGND V
20
IN Y
V-Phase low -side input pin (Negative logic)
21
IN V
V-Phase high-side input pin (Negative logic)
22
FO V
V-Phase Diagnosis output pin(open drain output. Wired or
connection can be performed with the Diagnosis output pin
of other Phase.)
23
V CC V
V-Phase control power supply (+15V typ.)
24
CU
U-Phase bootstrap capacitor connecting pin (-)
25
BS U
U-Phase bootstrap capacitor connecting pin (+)
26
SGND U
27
IN X
U-Phase low -side input pin (Negative logic)
28
IN U
U-Phase high-side input pin (Negative logic)
29
FO U
U-Phase Diagnosis output pin(open drain output. Wired or
connection can be performed with the Diagnosis output pin
of other Phase.)
30
V CC U
U-Phase control power supply (+15V typ.)
W-Phase Signal Ground pin
V-Phase Signal Ground pin
U-Phase Signal Ground pin
TOSHIBA CONFIDENTIAL
4
TENTATIVE
MIG10J503
Truth Tble
Protection Circuit Detection State
High Side
Under
Voltage
Low Side
Under
Voltage
IGBT State
Input
Fault Output
IN(X)High
Side Arm
IN(X)Low
Side Arm
High Side
Arm
Low Side
Arm
FO(X)
Un-Detecting Un-Detecting Un-Detecting Un-Detecting
H
H
OFF
OFF
OFF
Un-Detecting Un-Detecting Un-Detecting Un-Detecting
H
L
OFF
ON
OFF
Un-Detecting Un-Detecting Un-Detecting Un-Detecting
L
H
ON
OFF
OFF
Un-Detecting Un-Detecting Un-Detecting Un-Detecting
L
L
OFF
OFF
OFF
Short Circuit
Over
Temperature
Detecting
Un-Detecting Un-Detecting Un-Detecting
H
H
OFF
OFF
OFF
Detecting
Un-Detecting Un-Detecting Un-Detecting
H
L
OFF
ON
OFF
Detecting
Un-Detecting Un-Detecting Un-Detecting
L
H
OFF
OFF
OFF
Detecting
Un-Detecting Un-Detecting Un-Detecting
L
L
OFF
OFF
OFF
Un-Detecting
Detecting
Un-Detecting Un-Detecting
H
H
OFF
OFF
OFF
Un-Detecting
Detecting
Un-Detecting Un-Detecting
H
L
OFF
OFF
OFF
Un-Detecting
Detecting
Un-Detecting Un-Detecting
L
H
OFF
OFF
OFF
Un-Detecting
Detecting
Un-Detecting Un-Detecting
L
L
OFF
OFF
OFF
Detecting
Detecting
Un-Detecting Un-Detecting
H
H
OFF
OFF
OFF
Detecting
Detecting
Un-Detecting Un-Detecting
H
L
OFF
OFF
OFF
Detecting
Detecting
Un-Detecting Un-Detecting
L
H
OFF
OFF
OFF
Detecting
Detecting
Un-Detecting Un-Detecting
L
L
OFF
OFF
OFF
Un-Detecting Un-Detecting
Detecting
Un-Detecting
H
H
OFF
OFF
ON
Un-Detecting Un-Detecting
Detecting
Un-Detecting
H
L
OFF
OFF
ON
Un-Detecting Un-Detecting
Detecting
Un-Detecting
L
H
OFF
OFF
ON
Un-Detecting Un-Detecting
Detecting
Un-Detecting
L
L
OFF
OFF
ON
Un-Detecting Un-Detecting Un-Detecting
Detecting
H
H
OFF
OFF
ON
Un-Detecting Un-Detecting Un-Detecting
Detecting
H
L
OFF
OFF
ON
Un-Detecting Un-Detecting Un-Detecting
Detecting
L
H
OFF
OFF
ON
Un-Detecting Un-Detecting Un-Detecting
Detecting
L
L
OFF
OFF
ON
Un-Detecting Un-Detecting
Detecting
Detecting
H
H
OFF
OFF
ON
Un-Detecting Un-Detecting
Detecting
Detecting
H
L
OFF
OFF
ON
Un-Detecting Un-Detecting
Detecting
Detecting
L
H
OFF
OFF
ON
Un-Detecting Un-Detecting
Detecting
Detecting
L
L
OFF
OFF
ON
・The above has indicated a part for single arm.
・There is no relevance of operation between arms.
・When the input of a high side arm and a low side arm is simultaneously set to "L", IGBT of a high side arm and
a low side arm turns off.
・FO (X) terminal is turned on in the meantime at the same time, as for the output of Phase which detected the
load short circuit state, it will maintain the OFF between 10ms, if a Short Current Protection detects a Short
Current state. Although an incoming signal is reset by an upper arm and a lower arm being simultaneously set
to "H" in the back in this state, OFF of an output and FO (X) are maintained between 10ms. Although FO (X) is
turned off when FO (X) terminal for 10ms will not be in the simultaneous "H" state of an upper arm and a
lower arm in during ON time, an output maintains OFF. This release is made by an upper arm and a lower
arm being simultaneously set to "H." (Short Current Protection is a non-repetition. When FO (X) turns on,
please turn off the input of all Phase.)
・If an Over Temperature Protection circuit detects an Over Temperature state, while the output of Phase which
detected the Over Temperature Protection state is turned off, FO (X) terminal turns it on. This state will return
operation, if temperature falls to Over Temperature Protection detection return temperature (Over
Temperature Protection temperature- Over Temperature Protection hysteresis).
TOSHIBA CONFIDENTIAL
5
TENTATIVE
MIG10J503
Absolute Maximum Rating (Tj = 25°C)
Item
Symbol
Rating
Unit
V BB
450
V
V BB (surge)
500
V
V CC
20
V
V BS
20
V
VCES
600
V
Each Collector Current (DC)
IC
±10
A
Each Collector Current (PEAK)
ICP
±20
A
Input Voltage
V IN
20
V
Fault Output Supply Voltage
V FO
20
V
Fault Output Current
IFO
15
mA
PGND-SGND Voltage Difference
V PGND-SGND
±5
V
Output Voltage Rate of Change
dv/dt
20
kV/μs
Collector Power Dissipation (Per 1 IGBT Chip)
PC
43
W
Collector Power Dissipation (Per 1 FRD Chip)
PC
25
W
TOPE
−20~100
°C
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−40~125
°C
Isolation Voltage(60Hz sinusoidal ,AC)
V ISO
2500 (1min)
Vrms
Power Supply Voltage
Collector-Emitter Voltage
Operating Temperature
TOSHIBA CONFIDENTIAL
6
TENTATIVE
MIG10J503
Electrical Characteristics (Tj = 25°C)
Item
Symbol
Condition
Min.
Typ.
Max.
V BB

50
300
400
V CC

13.5
15
17
V BS

13.5
15
17
V BB = 400 V 、V IN = 5 V(1arm)


1
mA
V CC = 15 V、V IN = 5 V(1arm)

0.8
1.5
mA
V CC = 15 V、V IN = 0 V(1arm)

1.1
1.5
mA
V CC = 15 V、V IN = 5 V(1arm)

330
600
μA
V CC = 15 V、V IN = 0 V(1arm)

470
1000
μA
V IH
V IN = “H”
3.5
2.8

V IL
V IN = “L”

2.3
1.5
V IN = “H”→"L"

0.5

V IN = “L”→"H"

0.5

IIH
V CC = 15 V、V IN = 5V
50
100
200
IIL
V CC = 15 V、V IN = 0 V
75
150
300
V sat U
V CC = V BS=15V, IC = 10 A, Upper Arm

1.5
2.0
V sat L
V CC = 15V, IC = 10 A, Lower Arm

1.5
2.0
V FU
IF = 10 A, Upper Arm

1.3
1.9
V FL
IF = 10 A, Lower Arm

1.3
1.9
Fault Output Voltage
V FO
IFO = 5 mA,

0.8
1.2
V
Short Current Protection Voltage
VR
Short Current Protection
0.45
0.5
0.55
V
V R td
Short Current Protection
0.5
1
2
µs
Operating Power Supply Voltage
IBB
Current dissipation
ICC
IBS
input Voltage
input Voltage hysteresis
Input Current
IGBT Saturation Voltage
FRD Forward Voltage
Short Current Protection delay time
V INhys
Unit
V
V
V
µA
V
V
Over Temperature Protection
TSD
Over Temperature Protection
150
165
200
°C
Over Temperature Protection hys.
∆TSD
Over Temperature Protection return

20

°C
Under Voltage Protection
V BSUVD
Upper Arm Under Voltage Protection
10.0
11.0
12.0
Under Voltage Protection recovery
V BSUVR
Upper Arm Under Voltage Protection
recovery
10.5
11.5
12.5
Under Voltage Protection
VccUVD
Lower Arm Under Voltage Protection
10.5
11.5
12.5
Under Voltage Protection recovery
VccUVR
Lower Arm Under Voltage Protection
recovery
11.0
12.0
13.0
IGBT turn-on propagation delay time
tdON
V BB = 300 V, IC = 10A, Inductance Load

1.3
TBD
tr
V BB = 300 V, IC = 10A, Inductance Load

0.1
TBD
IGBT rise time
IGBT turn-on time
IGBT turn-off propagation delay time
IGBT fall time
IGBT turn-off time
tON
V BB = 300 V, IC = 10A, Inductance Load

1.4
TBD
tdOFF
V BB = 300 V, IC = 10A, Inductance Load

1.2
TBD
tf
V BB = 300 V, IC = 10A, Inductance Load

0.1
TBD
tOFF
V BB = 300 V, IC = 10A, Inductance Load

1.3
TBD

0
300
ns

0
300
ns
V BB = 300 V, IC = 10A, Inductance Load
1


µs
V BB = 300 V, IF = 10 A

100

ns
IGBT vertical arm turn-on, a turn-off
propagation delay time lag
| tOFF L- tON H|
IGBT vertical arm turn-on, a turn-off
propagation delay time lag
| tOFF H- tON L|
daed time
FRD reverse recovery time
V
tdaed
trr
V BB = 300 V, IC = 10A, Inductance Load
(include each Phase)
V BB = 300 V, IC = 10A, Inductance Load
(include each Phase)
TOSHIBA CONFIDENTIAL
µs
7
TENTATIVE
MIG10J503
The example of an application circuit (in the case of not insulating with a control side)
3
5V
V CC U
FO U
IN U
IN X
30
29
28
27
SGND U
26
+ BS U
場
CONTROL CIRCUIT
CU
V CC V
FO V
IN V
IN Y
SGND V
+ BS V
Over
Temp
25
21
Under Under
Volt
Volt
age
age
20
19
Over
Temp
18
11
U
Over
Curre
nt
PGND U
1
6
23
22
2
Low
Side
Driver
24
C V 17
V CC W
16
FO W
15
IN W
14
IN Z
13
SGND W
12
+ BS W
Under Under
Volt
Volt
age
age
High
Side
Driver
Over
Temp
V BB
High
Side
Driver
5
V
Low
Side
Driver
Over
Curre
nt
M
High
voltage
+
PGND V
4
9
Under Under
Volt
Volt
age
age
V BB
V BB
High
Side
Driver
8
Low
Side
Driver
Over
Curre
nt
W
PGND W
7
10
CW
+
15V
TOSHIBA CONFIDENTIAL
8
TENTATIVE
MIG10J503
Package Outline
Unit:mm
The A section details
The C section details
The B section details
TOSHIBA CONFIDENTIAL
9