TENTATIVE TPD4105AK TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4105AK The TPD4105AK is a DC brush less motor driver using high voltage PWM control. It is fabricated by high voltage SOI process. It contains level shift high-side driver, low-side driver, IGBT outputs, FRDs and protective functions for under voltage protection circuits and thermal shutdown circuit. It is easy to control a DC brush less motor by just putting logic inputs from a MPU or motor controller to the TPD4105AK. Features • Bootstrap circuit gives simple high side power supply. • Bootstrap diodes are built in. • A dead time can be set as a minimum of 1.4 µs, and it is the best for a Sine-wave from drive. • 3-phase bridge output using IGBTs. • • FRDs are built in. Included under voltage protection and thermal shutdown. • The regulator of 7V (typ.) is built in. • Package: 23-pin HZIP. This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product, ensure that the environment is protected against electrostatic discharge. Weight HZIP23-P-1.27F : 6.1 g (typ.) HZIP23-P-1.27G : 6.1 g (typ.) HZIP23-P-1.27H : 6.1 g (typ.) 1 2005-04-03 TENTATIVE TPD4105AK Pin Assignment 1 HU 2 3 HV HW 4 LU 5 LV 6 7 LW IS1 8 9 10 11 12 13 NC BSU U V BB 1 BSV V 14 15 16 17 18 19 20 21 22 23 BSW W V BB 2 NC IS2 NC DIAG V CC GND V REG Marking Lot No. TPD4105AK JAPAN Part No. (or abbreviation code) A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-04-03 TENTATIVE TPD4105AK Block Diagram V CC 21 9 BSU 12 BSV 14 BSW V REG 23 7V Regulator UnderUnderUndervoltage voltage voltage Protection Protection Protection Undervoltage Protection 11 V BB1 16 V BB2 High-side Level Shift Driver HU 1 HV 2 HW 3 Input Control Thermal 10 U Shutdown 13 V LU 4 LV 5 LW 6 15 W Low -side Driver DIAG 20 18 IS2 7 IS1 22 GND 3 2005-04-03 TENTATIVE TPD4105AK Pin Description Pin No. Symbol Pin Description 1 HU 2 HV 3 HW 4 LU 5 LV 6 LW 7 IS1 IGBT emitter and FRD anode pin. 8 NC Unused pin, which is not connected to the chip internally. 9 BSU 10 U 11 V BB1 U and V-phase high-voltage power supply input pin. 12 BSV V-phase bootstrap capacitor connecting pin. 13 V 14 BSW 15 W 16 V BB2 17 NC Unused pin, which is not connected to the chip internally. 18 IS2 IGBT emitter and FRD anode pin. 19 NC Unused pin, which is not connected to the chip internally. The control terminal of IGBT by the side of U top arm. It turns off more than by 1.5V. It turns on more than by 3.5V. The control terminal of IGBT by the side of V top arm. It turns off more than by 1.5V. It turns on more than by 3.5V. The control terminal of IGBT by the side of W top arm. It turns off more than by 1.5V. 20 It turns on more than by 3.5V. The control terminal of IGBT by the side of U bottom arm. It turns off more than by 1.5V. It turns on more than by 3.5V. The control terminal of IGBT by the side of V bottom arm. It turns off more than by 1.5V. It turns on more than by 3.5V. The control terminal of IGBT by the side of W bottom arm. It turns off more than by 1.5V. It turns on more than by 3.5V. U-phase bootstrap capacitor connecting pin. U-phase output pin. V-phase output pin. W-phase bootstrap capacitor connecting pin. Ｗ-phase output pin. W-phase high-voltage power supply input pin. DIAG With the diagnostic output terminal of open drain , a pull-up is carried out by resistance. It turns it on at the time of unusual. 21 V CC Control power supply pin.(15V typ.) 22 GND Ground pin. 23 V REG 7V regulator output pin. 4 2005-04-03 TENTATIVE TPD4105AK Timing Chart HU HV HW Input Voltage LU LV LW VU Output voltage VV VW 5 2005-04-03 TENTATIVE TPD4105AK Truth Table Mode Input Top arm ＨＵ ＨＶ ＨＷ ＬＵ ＬＶ ＬＷ Bottom arm Ｕ phase Ｖ phase Ｗ phase Ｕ phase Ｖ phase Ｗ phase DIAG Ｈ Ｌ Ｌ Ｌ Ｈ Ｌ ＯＮ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ ＯＦＦ ＯＦＦ Ｈ Ｌ Ｌ Ｌ Ｌ Ｈ ＯＮ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ ＯＦＦ Ｌ Ｈ Ｌ Ｌ Ｌ Ｈ ＯＦＦ ＯＮ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ ＯＦＦ Ｌ Ｈ Ｌ Ｈ Ｌ Ｌ ＯＦＦ ＯＮ ＯＦＦ ＯＮ ＯＦＦ ＯＦＦ ＯＦＦ Ｌ Ｌ Ｈ Ｈ Ｌ Ｌ ＯＦＦ ＯＦＦ ＯＮ ＯＮ ＯＦＦ ＯＦＦ ＯＦＦ Ｌ Ｌ Ｈ Ｌ Ｈ Ｌ ＯＦＦ ＯＦＦ ＯＮ ＯＦＦ ＯＮ ＯＦＦ ＯＦＦ Thermal shutdown Ｈ Ｌ Ｌ Ｌ Ｈ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｈ Ｌ Ｌ Ｌ Ｌ Ｈ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｈ Ｌ Ｌ Ｌ Ｈ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｈ Ｌ Ｈ Ｌ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｌ Ｈ Ｈ Ｌ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｌ Ｈ Ｌ Ｈ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｈ Ｌ Ｌ Ｌ Ｈ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｈ Ｌ Ｌ Ｌ Ｌ Ｈ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｈ Ｌ Ｌ Ｌ Ｈ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｈ Ｌ Ｈ Ｌ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｌ Ｈ Ｈ Ｌ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Ｌ Ｌ Ｈ Ｌ Ｈ Ｌ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＦＦ ＯＮ Normal Under voltage Notes: Release of Thermal shutdown protection and under voltage protection depends release of a self-reset . Absolute Maximum Ratings (Ta = 25°C) Characteristics Power supply voltage Output current (DC) Symbol Rating Unit V BB 500 V V CC 18 V Iout 3 A Output current (pulse) Iout 4 A Input voltage V IN −0.5~7 V V REG current IREG 50 mA V DIAG current IDIAG 20 mA Power dissipation (Ta = 25°C) PC 4 W Power dissipation (Tc = 25°C) PC 20 W Tjopr −20~135 °C Junction temperature Tj 150 °C Storage temperature Tstg −55~150 °C Lead-heat sink isolation voltage Vhs 1000 (1 min) Vrms Operating temperature 6 2005-04-03 TENTATIVE TPD4105AK Electrical Characteristics (Ta = 25°C) Characteristics Operating power supply voltage Symbol Test Condition Min Typ. Max V BB 50 280 450 V CC 13.5 15 16.5 Unit V IBB V BB = 400 V 0 0.5 ICC V CC = 15 V 1 5 IBS (ON) V BS = 15 V, high side ON 300 410 IBS (OFF) V BS = 15 V, high side OFF 270 370 V IH V IN = “H” 3.5 V IL V IN = “L” 1.5 IIH V IN = 5Ｖ 150 IIL V IN = 0 V 100 V CEsat H V CC = 15 V, IC = 1.5 A 2.4 3 V CEsatL V CC = 15 V, IC = 1.5 A 2.4 3 V FH IF = 1.5 A, high side 1.6 2.0 V FL IF = 1.5 A, low side 1.6 2.0 V CC = 15 V, IO = 30 mA 6.5 7 7.5 V V F (BSD) IF = 500μＡ 0.9 1.2 V TSD V CC = 15 V 135 185 ℃ Thermal shutdown hysteresis ∆TSD V CC = 15 V 50 ℃ V CC under voltage protection V CC UVD 10 11 12 V V CC under voltage protection recovery V CC UVR 10.5 11.5 12.5 V V BS under voltage protection V BSUVD 8 9 9.5 V V BS under voltage protection recovery V BSUVR 8.5 9.5 10.5 V DIAG saturation voltage V DIAGsat IDIAG=5mA 0.5 V Current dissipation Input voltage Input current Output saturation voltage FRD forward voltage Regulator voltage BSD forward voltage Thermal shutdown temperature V REG mA µA V µA V V Output on delay time ton V BB = 280 V, IC = 1.5 A 1.5 3 µs Output off delay time toff V BB = 280 V, IC = 1.5 A 1.2 3 µs tdead V BB = 280 V, IC = 1.5 A 1.4 µs trr V BB = 280 V, IC = 1.5 A 200 ns Dead time FRD reverse recovery time 7 2005-04-03 TENTATIVE TPD4105AK Application Circuit Example 15V V CC 21 C4 + 9 12 C5 14 C6+ V REG 23 C7 7V Regulator 11 UnderUnderUndervoltage voltage voltage Protection Protection Protection Undervoltage Protection HU Control IC HV or HW Microcomputer LU LV LW 16 BSU BSV BSW V BB1 V BB2 High-side Level Shift Driver C1 C2 C3 1 2 Thermal 10 3 Shutdown 13 4 5 6 Input Control 15 U Ｍ V W Low -side Driver 20 DIAG 18 R２ 7 IS2 IS1 R１ 22 8 GND 2005-04-03 TENTATIVE TPD4105AK External Parts Standard external parts are shown in the following table. Part Recommended Value Purpose Remarks C1, C2, C3 25 V/2.2 µF Bootstrap capacitor (Note 1) R1 0.62 Ω ± 1% (1 W) Current detection (Note 2) C4 25 V/10 µF V CC power supply stability (Note 3) C５ 25 V/0.1 µF V CC for surge absorber (Note 3) C6 16 V/1 µF V REG power supply stability (Note 3) C7 16 V/1000 pF V REG for surge absorber (Note 3) R3 5.1 kΩ DIAG pin pull-up resistor (Note 4) Note 1: The required bootstrap capacitance value varies according to the motor drive conditions. The capacitor is biased by VCC and must be sufficiently derated for it. Note 2: The following formula shows the detection current: IO = VR ÷ RIS (For VR = 0.5 V) Do not exceed a detection current of 3 A when using this product. (Please go from the outside in the over current protection.) Note 3: When using this product, some adjustment is required in accordance with the use environment. When mounting, place as close to the base of this product leads as possible to improve the ripple and noise elimination. Note 4: The DIAG pin is open drain. Note that when the DIAG pin is connected to a power supply with a voltage higher than or equal to the VCC, a protection circuit is triggered so that the current flows continuously. If not using the DIAG pin, connect to the GND. Handling precautions Please control the input signal in the state to which the V CC voltage is steady. Both of the order of the VBB power supply and the V CC power supply are not cared about either. Note that if the power supply is switched off as described above, this product may be destroyed if the current regeneration route to the V BB power supply is blocked when the V BB line is disconnected by a relay or similar while the motor is still running. The excess voltage such as the voltage serge which exceed the maximum rating is added, for example, may destroy the circuit. Accordingly, be careful of handling this product or of surge voltage in its application environment. 9 2005-04-03 TENTATIVE TPD4105AK Description of Protection Function (1) Under voltage protection This product incorporates the under voltage protection circuit to prevent the IGBT from operating in unsaturated mode when the V CC voltage or the V BS voltage drops. When the V CC power supply falls to this product internal setting (V CCUV D = 11 V typ.), all IGBT outputs shut down regardless of the input. This protection function has hysteresis. When the VCCUVR (= 11.5 V typ.) reaches 0.5 V higher than the shutdown voltage, this product is automatically restored and the IGBT is turned on again by the input. When the V BS supply voltage drops (V BSUVD = 9 V typ.), the high-side IGBT output shuts down. When the V BSUVR (= 9.5 V typ.) reaches 0.5 V higher than the shutdown voltage, the IGBT is turned on again by the input signal. Thermal shutdown This product incorporates the thermal shutdown circuit to protect itself against the abnormal state when its temperature rises excessively. When the temperature of this chip rises due to external causes or internal heat generation and the internal setting TSD reaches 150°C, all IGBT outputs shut down regardless of the input. This protection function has hysteresis (∆TSD = 50°C typ.). When the chip temperature falls to TSD − ∆TSD, the chip is automatically restored and the IGBT is turned on again by the input. Because the chip contains just one temperature detection location, when the chip heats up due to the IGBT, for example, the differences in distance from the detection location in the IGBT (the source of the heat) cause differences in the time taken for shutdown to occur. Therefore, the temperature of the chip may rise higher than the thermal shutdown temperature when the circuit started to operate. (2) Peak winding current (A) Peak winding current (A) Safe Operating Area 3.0 0 0 400 3.1 0 Power supply voltage V BB (V) 0 400 Power supply voltage V BB (V) Figure 1 SOA at Tj = 135°C Figure 2 SOA at Tc = 95°C Note 1: The above safe operating areas are Tj = 135°C (Figure 1) and Tc = 95°C (Figure 2). If the temperature exceeds thsese, the safe operation areas reduce. 10 2005-04-03 TENTATIVE TPD4105AK Package Dimensions Weight: 6.1 g (typ.) 11 2005-04-03 TENTATIVE TPD4105AK Package Dimensions Weight: 6.1 g (typ.) 12 2005-04-03 TENTATIVE TPD4105AK Package Dimensions Weight: 6.1 g (typ.) 13 2005-04-03 TENTATIVE TPD4105AK RESTRICTIONS ON PRODUCT USE 030619EBA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The products described in this document are subject to the foreign exchange and foreign trade laws. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 14 2005-04-03