SHINDENGEN Schottky Rectifiers (SBD) Single OUTLINE DIMENSIONS DG1M3 Case : G1F Unit : mm 30V 1A RATINGS Absolute Maximum Ratings iTl=25 unless otherwise specified) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, Ta = 27, *1 IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 Peak Surge Forward Current Ratings -55 to 150 150 30 1 20 Unit V A A Electrical Characteristics iTl=25 unless otherwise specified) Item Symbol Conditions VF Forward Voltage IF=0.2A, Pulse measurement VF IF=0.7A, Pulse measurement IR Reverse Current VR=VRM, Pulse measurement Cj Junction Capacitance f=1MHz, VR=10V Æja junction to ambient, *1 Thermal Resistance Æja junction to ambient, *2 Æja junction to ambient, *3 Æjl junction to lead, *3 Ratings Max 0.40 Max 0.46 Max 0.05 Typ 36 Max 210 Max 120 Max 70 Max 20 Unit V V mA pF *1 *2 *3 Measured on the 1×1 inch phenol substrate (pattern area : 32.6mm2) Measured on the 1×1 inch phenol substrate (pattern area : 160mm2) Measured on the 2×2 inch alumina substrate (pattern area : 2100mm2) Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd. /W DG1M3 Forward Voltage 10 Forward Current IF [A] 5 2 Tl=150°C [MAX] Tl=150°C [TYP] Tl= 25°C [MAX] Tl= 25°C [TYP] 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 DG1M3 Reverse Current 100 10 Reverse Current IR [mA] Tl=150°C [TYP] Tl=125°C [TYP] 1 Tl=100°C [TYP] 0.1 Tl=75°C [TYP] Tl=50°C [TYP] 0.01 Tl=25°C [TYP] 0.001 0.0001 0 5 10 15 20 Reverse Voltage 25 30 VR [V] 35 40 DG1M3 Forward Power Dissipation Forward Power Dissipation PF [W] 0.8 0.7 DC D=0.8 0.6 SIN 0.5 0.3 0.5 0.2 0.1 0.4 0.05 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 IO [A] Average Rectified Forward Current Tj =150°C IO 0 tp D=tp/T T DG1M3 Reverse Power Dissipation Reverse Power Dissipation PR [W] 1 0.8 DC D=0.05 0.1 0.2 0.6 0.3 0.4 0.5 0.2 SIN 0.8 0 0 5 10 15 20 Reverse Voltage 25 30 35 VR [V] Tj =150°C 0 VR tp D=tp/T T DG1M3 Derating Curve IO [A] Average Rectified Forward Current 2 DC 1.5 D=0.8 0.5 1 SIN 0.3 0.2 0.5 0.1 0.05 0 0 20 40 60 80 100 Ambient Temperature 120 140 160 Ta [°C] VR = 15V IO 0 0 Glass-epoxy substrate VR substrate tp Soldering 1.2mm x 1.2mm Conductor layer 35 µm D=tp/T T DG1M3 Peak Surge Forward Capability IFSM 30 10ms 1 cycle 25 non-repetitive, sine wave, Tj=25°C before surge current is applied IFSM [A] Peak Surge Forward Current 10ms 20 15 10 5 0 1 2 5 10 Number of Cycles [cycle] 20 50 DG1M3 Junction Capacitance 1000 Junction Capacitance Cj [pF] f=1MHz Tl=25°C TYP 100 10 0.1 0.2 0.5 1 2 Reverse Voltage VR [V] 5 10 20 30