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PD - 9.1240B
IRF7304
PRELIMINARY
HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
S1
G1
S2
G2
1
8
D1
2
7
D1
3
6
D2
4
5
D2
VDSS = -20V
RDS(on) = 0.090Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design for
which HEXFET Power MOSFETs are well known, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
10 Sec. Pulsed Drain Current, V GS @ -4.5V
Continuous Drain Current, V GS @ -4.5V
Continuous Drain Current, V GS @ -4.5V
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
Units
-4.0
-3.6
-2.9
-14
1.4
0.011
±8.0
-1.2
-55 to + 150
A
A
A
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
Junction-to-Amb. (PCB Mount, steady state)**
Min.
Typ.
Max.
Units
––––
––––
90
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
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IRF7304
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
-20
–––
–––
–––
-0.70
4.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
V(BR)DSS
IGSS
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250µA
-0.012 ––– V/°C Reference to 25°C, I D = -1mA
––– 0.090
VGS = -4.5V, ID = -2.2A
Ω
––– 0.140
VGS = -2.7V, ID = -1.8A
––– –––
V
VDS = VGS, ID = -250µA
––– –––
S
VDS = -16V, ID = -2.2A
––– -1.0
VDS = -16V, VGS = 0V
µA
––– -25
VDS = -16V, VGS = 0V, TJ = 125°C
––– -100
VGS = -8.0V
nA
––– 100
VGS = 8.0V
––– 22
ID = -2.2A
––– 3.3
nC VDS = -16V
––– 9.0
VGS = -4.5V, See Fig. 6 and 12
8.4 –––
VDD = -10V
26 –––
ID = -2.2A
ns
51 –––
RG = 6.0Ω
33 –––
RD = 4.5Ω, See Fig. 10
4.0
–––
nH
LS
Internal Source Inductance
–––
6.0
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
610
310
170
–––
–––
–––
pF
Between lead tip
and center of die contact
VGS = 0V
VDS = -15V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 1.8
MOSFET symbol
showing the
A
––– ––– -14
integral reverse
p-n junction diode.
––– ––– -1.0
V
TJ = 25°C, I S = -1.8A, V GS = 0V
––– 56
84
ns
TJ = 25°C, I F = -2.2A
––– 71 110
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
ISD ≤ -2.2A, di/dt ≤− 50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Repetitive rating; pulse width limited by max. junction
temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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IRF7304
100
100
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
10
1
-1.5V
20µs PULSE WIDTH
TJ = 25°C
A
0.1
0.01
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
-ID , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
TOP
0.1
1
10
10
1
-1.5V
20µs PULSE WIDTH
TJ = 150°C
0.1
0.01
100
0.1
-VDS , Drain-to-Source Voltage (V)
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
TJ = 150°C
1
VDS = -15V
20µs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
A
4.5
A
100
Fig 2. Typical Output Characteristics,
TJ = 150oC
100
TJ = 25°C
10
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
TJ = 25oC
10
1
2.0
I D = -3.6A
1.5
1.0
0.5
VGS = -4.5V
0.0
5.0
-VGS , Gate-to-Source Voltage (V)
-60
-40
-20
0
20
40
60
80
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
129
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A
100 120 140 160
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IRF7304
C, Capacitance (pF)
1500
V GS = 0V,
f = 1MHz
C iss = C gs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
1000
Coss
Crss
500
0
A
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
100
I D = -2.2A
VDS = -16V
-ISD , Reverse Drain Current (A)
-VGS , Gate-to-Source Voltage (V)
10
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 12
0
0
5
10
15
20
A
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.3
25
0.6
0.9
1.2
-VSD , Source-to-Drain Voltage (V)
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
130
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A
1.5
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IRF7304
100
4.0
-ID, Drain Current (Amps)
-I D , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10
1ms
10ms
1
100ms
0.1
3.0
2.0
1.0
TA = 25°C
TJ = 150°C
Single Pulse
A
0.1
1
10
100
A
0.0
25
-VDS , Drain-to-Source Voltage (V)
50
75
100
125
150
TA , Ambient Temperature (°C)
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current Vs. Ambient
Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
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IRF7304
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t
0.1
0.00001
Notes:
1. Duty factor D = t / t
2. Peak T =JP
0.0001
0.001
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.1
1
xZ
DM
10
1
2
+thJA
T
A
100
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 12a. Basic Gate Charge Waveform
Fig 12b. Gate Charge Test Circuit
Refer to the Appendix Section for the following:
Appendix A:
Figure 14, Peak Diode Recovery dv/dt Test Circuit — See page 328.
Appendix B:
Package Outline Mechanical Drawing — See page 332.
Appendix C:
Part Marking Information — See page 332.
Appendix D:
Tape and Reel Information — See page 336.
132
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A
1000