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PD - 9.1253
IRFR2605
IRFU2605
HEXFET® Power MOSFET
Ultra Low On-Resistance
ESD Protected
Surface Mount (IRFR2605)
Straight Lead (IRFU2605)
150°C Operating Temperature
Repetitive Avalanche Rated
Fast Switching
D
VDSS = 55V
G
RDS(on) = 0.075Ω
ID = 19A
Description
S
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques that achieve extremely low on-resistance per silicon area
and allow electrostatic discharge protection to be integrated in the gate structure.
These benefits, combined with the ruggedized device design that HEXFETs are
known for, provide the designer with extremely efficient and reliable device for use
in a wide variety of applications.
D-PAK
TO-252AA
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straight lead version (IRFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 watts are possible in
typical surface mount applications.
I-PAK
TO-251AA
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
VESD
Max.
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Human Body Model, 100pF, 1.5K Ω
Units
19
12
76
50
3.1
0.40
0.025
±20
100
12
5.0
4.5
-55 to + 150
300 (1.6mm from case)
2000
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
V
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
Min.
Typ.
Max.
Units
—
—
—
—
—
—
2.5
40
62
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
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IRFR2605
IRFU2605
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(ON)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
3.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.051
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.1
56
31
39
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.085 Ω
VGS = 10V, ID = 11A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 11A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 125°C
10
VGS = 20V
µA
-10
VGS = -20V
23
ID = 11A
5.4
nC VDS = 44V
10
VGS = 10V, See Fig. 6 and 13
–––
VDD = 25V
–––
ID = 11A
ns
–––
RG = 20Ω
–––
RD = 2.2Ω, See Fig. 10
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
from package
––– 7.5 –––
and center of die contact
––– 420 –––
VGS = 0V
––– 250 –––
pF
VDS = 25V
––– 67 –––
ƒ = 1.0MHz, See Fig. 5
D
LD
Internal Drain Inductance
G
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
18
A
–––
–––
72
–––
–––
–––
––– 1.5
67 100
0.18 0.26
V
ns
µC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 11A, VGS = 0V
TJ = 25°C, IF = 11A
di/dt = 100A/µs
D
G
S
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 11A, di/dt ≤ 110A/µs, V DD ≤ V(BR)DSS,
TJ ≤ 150°C
VDD = 25V, starting T J = 25°C, L = 830µH
RG = 25Ω, IAS = 11A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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IRFR2605
IRFU2605
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
1
20µs PULSE WIDTH
TC = 25°C
0.1
0.01
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
0.1
1
10
A
10
4.5V
1
20µs PULSE WIDTH
TC = 150°C
0.1
0.01
1 00
0.1
VDS , Drain-to-Source Voltage (V)
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
TJ = 25°C
TJ = 150°C
10
VDS = 25V
20µs PULSE WIDTH
5
6
7
8
9
A
100
Fig 2. Typical Output Characteristics,
TC = 150oC
100
4
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
TC = 25oC
1
1
10
A
VGS , Gate-to-Source Voltage (V)
I D = 19A
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
To Order
A
100 120 140 160
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRFR2605
IRFU2605
1000
VGS , Gate-to-Source Voltage (V)
800
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
Ciss = Cgs + C gd , Cds SHORTED
Crss = C gd
Coss = Cds + C gd
600
Ciss
Coss
400
200
I D = 11A
VDS = 44V
VDS = 26V
16
12
8
4
Crss
0
A
1
10
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
V DS , Drain-to-Source Voltage (V)
10
15
20
A
25
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
ID , Drain Current (A)
I SD , Reverse Drain Current (A)
5
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
A
1.6
100
10µs
1
0.1
TC = 25°C
TJ = 150°C
Single Pulse
1
10
1ms
A
100
1000
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
100µs
10
Fig 8. Maximum Safe Operating Area
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IRFR2605
IRFU2605
RD
VDS
VGS
20
D.U.T.
RG
VDD
ID, Drain Current (Amps)
16
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
12
Fig 10a. Switching Time Test Circuit
8
4
A
0
25
50
75
100
125
150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
PD M
0.02
0.01
t
SINGLE PULSE
(THERMAL RESPONSE)
t
N o te s :
1 . D u ty fa c to r D = t
0.01
0.00001
1
1
2
/ t2
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
To Order
A
1
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10 V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
IRFR2605
IRFU2605
200
TOP
BOTTOM
160
ID
4.9A
7.0A
11A
120
80
40
0
VDD = 25V
25
50
A
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
10 V
Fig 13a. Basic Gate Charge Waveform
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Fig 13b. Gate Charge Test Circuit
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IRFR2605
IRFU2605
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
RG
•
•
•
•
dv/dt controlled by R G
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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IRFR2605
IRFU2605
Package Outline
D-PAK Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
-A1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
1.02 (.040)
1.64 (.025)
10.42 (.410)
9.40 (.370)
1
2
LEAD ASSIGNMENTS
1 - GATE
3
0.51 (.020)
MIN.
-B1.52 (.060)
1.15 (.045)
3X
1.14 (.045)
2X
0.76 (.030)
0.89 (.035)
0.64 (.025)
0.25 (.010)
2 - DRAIN
3 - SOURCE
4 - DRAIN
0.58 (.023)
0.46 (.018)
M A M B
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2.28 (.090)
4.57 (.180)
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
Part Marking Information
D-PAK
EXAMPLE : THIS IS AN IRFR120
WITH ASSEMBLY
LOT CODE 9U1P
INTERNATIONAL
RECTIFIER
LOGO
A
IRFR
120
9U
ASSEMBLY
LOT CODE
FIRST PORTION
OF PART NUMBER
1P
SECOND PORTION
OF PART NUMBER
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145
10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR
SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
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