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PD - 9.1221
IRF1310S
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
175°C Operating Temperature
VDSS = 100V
RDS(on) = 0.04Ω
ID = 41A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The SMD-220 is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The SMD-220 is suitable for
high current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
41
29
160
170
3.8
1.1
0.025
±20
230
41
17
5.5
-55 to + 175
300 (1.6mm from case)
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
Min.
Typ.
Max.
Units
––––
––––
––––
––––
––––
––––
0.90
40
62
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
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IRF1310S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(ON)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
∆V(BR)DSS/∆TJ
Min.
100
–––
–––
2.0
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
77
82
64
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 2500
––– 630
––– 130
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.04
Ω
VGS = 10V, ID = 25A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 50V, ID = 25A
25
VDS = 100V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
110
ID = 25A
18
nC VDS = 80V
42
VGS = 10V, See Fig. 6 and 13
–––
VDD = 50V
–––
ID = 25A
ns
–––
RG = 9.1Ω
–––
RD = 2.0Ω, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
from package
–––
and center of die contact
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
41
–––
–––
160
–––
–––
–––
–––
140
0.79
2.5
210
1.2
A
V
ns
µC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 25A, VGS = 0V
TJ = 25°C, IF = 25A
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 25A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
VDD = 25V, starting TJ = 25°C, L = 3.1mH
RG = 25Ω, IAS = 25A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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IRF1310S
1000
100 0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
100
10
4.5V
0.1
1
10
4.5V
10
20µs PULSE WIDTH
TC = 25°C
1
20µs PULSE WIDTH
TC = 175°C
1
0.1
100
1
10
100
, Drain-to-Source Voltage (V)
DS
V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics,
TC = 25oC
Fig 2. Typical Output Characteristics,
TC = 175oC
V
R DS(on) , Drain-to-Source On Resistance
(Normalized)
1000
I D , D ra in-to-So urce Current (A )
10 0
T J = 2 5°C
100
TJ = 1 7 5°C
10
V DS = 50V
2 0µ s P U L S E W ID TH
1
4
5
6
7
8
9
3.0
ID = 25A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
10
V G S , G a te-to-S o urce V olta ge (V )
-6 0 -4 0 -20
0
20
40
60
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
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Fig 4. Normalized On-Resistance
Vs. Temperature
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IRF1310S
4 00 0
, Gate-to-Source Voltage (V)
3 00 0
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
Ciss = Cgs + C gd , Cds SHORTED
Crss = C gd
Coss = C ds + C gd
Ciss
2 00 0
Coss
V DS = 80V
V DS = 50V
V DS = 20V
16
12
8
GS
1 00 0
I D = 25A
V
4
Crss
0
1
10
FOR TEST CIRCUIT
SEE FIGURE 13
0
10 0
0
V DS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
60
90
12 0
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
30
QG , Total Gate Charge (nC)
100
TJ = 175°C
TJ = 25°C
10
10µs
100
100µs
1ms
10
10ms
VGS = 0V
1
0
0.5
1
1.5
2
2.5
TC = 25°C
TJ = 175°C
Single Pulse
1
1
100ms
10
100
1000
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRF1310S
VDS
VGS
50
RD
D.U.T.
RG
ID, Drain Current (Amps)
VDD
40
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
10
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
1
T herm al Re spo nse (Z thJC )
D = 0 .5 0
0 .2 0
0.1
0 .1 0
PD M
0 .0 5
t
0 .0 2
0 .0 1
S ING L E PU L S E
(T H E R M A L R E S P O N S E )
1
t
2
N o te s :
1 . D u ty fa c to r D = t / t
1 2
0.01
0.00001
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0 .001
0.01
0.1
1
t 1 , R ectang ular Pulse D uration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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10
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10 V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
IRF1310S
600
ID
10A
18A
BOTTOM 25A
TOP
500
400
300
200
100
0
VDD = 50V
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
Fig 13a. Basic Gate Charge Waveform
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Fig 13b. Gate Charge Test Circuit
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IRF1310S
Package Outline
SMD-220 Outline
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IRF1310S
Part Marking Information
Package Outline
SMD-220 Tape and Reel
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145
10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR
SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
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