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PD - 9.1229
IRFP350LC
HEXFET ® Power MOSFET
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V V gs Rating
Reduced C iss, Coss, Crss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
VDSS = 400V
RDS(on) = 0.30 Ω
ID = 16A
Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings. These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Absolute Maximum Ratings
Parameter
ID @ T C = 25°C
ID @ T C = 100°C
IDM
PD @T C = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Units
16
9.9
64
190
1.5
±30
390
16
19
4.0
-55 to + 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
To Order
Min.
Typ.
Max.
Units
––––
––––
––––
––––
0.24
––––
0.65
––––
40
°C/W
Revision 0
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IRFP350LC
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(ON)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
∆V(BR)DSS/∆TJ
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Min.
400
–––
–––
2.0
8.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.49
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
54
33
35
Max. Units
Conditions
–––
V
VGS = 0V, I D = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.30
Ω
VGS = 10V, I D = 9.6A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 50V, ID = 9.6A
25
VDS = 400V, VGS = 0V
µA
250
VDS = 320V, VGS = 0V, T J = 125°C
100
VGS = 20V
nA
-100
VGS = -20V
76
ID = 16A
20
nC
VDS = 320V
37
VGS = 10V, See Fig. 6 and 13
–––
VDD = 200V
–––
ID = 16A
ns
–––
RG = 6.2Ω
–––
RD = 12Ω, See Fig. 10
Between lead,
––– 5.0 –––
6mm (0.25in.)
nH
from package
––– 13
–––
and center of die contact
––– 2200 –––
VGS = 0V
––– 390 –––
pF
VDS = 25V
––– 31 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
16
–––
–––
64
–––
–––
–––
–––
440
4.1
1.6
660
6.2
A
V
ns
µC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, I S = 16A, V GS = 0V
TJ = 25°C, I F = 16A
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 16A, di/dt ≤ 200A/µs, V DD ≤ V(BR)DSS,
T J ≤ 150°C
VDD = 25V, starting T J = 25°C, L = 2.7mH
R G = 25Ω, IAS = 16A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
To Order
S+LD)
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IRFP350LC
100
1 00
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
4.5V
0.1
20µs PULSE WIDTH
TC = 25°C
0.01
0.01
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
0.1
1
10
A
10
4.5V
1
0.1
20µs PULSE WIDTH
TC = 150°C
0.01
0.01
100
0.1
VDS , Drain-to-Source Voltage (V)
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 150°C
1
TJ = 25°C
0.1
VDS = 50V
20µs PULSE WIDTH
4
5
6
7
8
A
100
Fig 2. Typical Output Characteristics,
TC = 150oC
100
0.01
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
TC = 25oC
10
1
9
10
A
3.0
I D = 16A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
TJ , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
To Order
A
100 120 140 160
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRFP350LC
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = Cds + C gd
V GS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
4000
3000
Ciss
2000
Coss
1000
Crss
0
10
V
= 320V
DS
VDS = 200V
VDS = 80V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
1
I D = 16A
100
0
V DS , Drain-to-Source Voltage (V)
40
60
A
80
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10 00
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
20
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
1 00
A
2.0
10µs
100µs
10
1ms
TC = 25°C
TJ = 150°C
Single Pulse
1
1
10ms
10
10 0
VDS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
To Order
A
1000
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IRFP350LC
RD
VDS
VGS
16
D.U.T.
RG
ID, Drain Current (Amps)
VDD
12
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
A
0
25
50
75
100
125
150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z
thJC)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
N o te s :
1 . D u ty fa c to r D = t
0.001
0.00001
1
/ t
2
2
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
To Order
A
10
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10 V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
IRFP350LC
900
ID
7.2A
10A
BOTTOM 16A
TOP
800
700
600
500
400
300
200
100
0
VDD = 50V
25
50
A
75
100
125
Starting TJ , Juntion Temperature (°C)
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
Fig 13a. Basic Gate Charge Waveform
To Order
Fig 13b. Gate Charge Test Circuit
150
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IRFP350LC
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
RG
•
•
•
•
dv/dt controlled by R G
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
To Order
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IRF350LC
Package Outline
TO-247AC
Part Marking Information
TO-247AC
EXAMPLE : THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 3A1Q
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFPE30
3A1Q 9302
ASSEMBLY
LOT CODE
DATE CODE
(YYWW)
YY = YEAR
WW WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145
10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR
SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
To Order