LINER LTC3831EGN

LTC3831
High Power Synchronous
Switching Regulator Controller
for DDR Memory Termination
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FEATURES
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DESCRIPTIO
The LTC®3831 is a high power, high efficiency switching
regulator controller designed for DDR memory termination. The LTC3831 generates an output voltage equal to
1/2 of an external supply or reference voltage. The LTC3831
uses a synchronous switching architecture with N-channel MOSFETs. Additionally, the chip senses output current through the drain-source resistance of the upper
N-channel FET, providing an adjustable current limit
without a current sense resistor.
High Power Switching Regulator Controller
for DDR Memory Termination
VOUT Tracks 1/2 of VIN or External VREF
No Current Sense Resistor Required
Low Input Supply Voltage Range: 3V to 8V
Maximum Duty Cycle > 91% Over Temperature
Drives All N-Channel External MOSFETs
High Efficiency: Over 95% Possible
Programmable Fixed Frequency Operation:
100kHz to 500kHz
External Clock Synchronization Operation
Programmable Soft-Start
Low Shutdown Current: <10µA
Overtemperature Protection
Available in 16-Pin Narrow SSOP Package
The LTC3831 operates with input supply voltage as low as
3V and with a maximum duty cycle of > 91%. It includes a
fixed frequency PWM oscillator for low output ripple
operation. The 200kHz free-running clock frequency can
be externally adjusted or synchronized with an external
signal from 100kHz to above 500kHz. In shutdown mode,
the LTC3831 supply current drops to <10µA.
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APPLICATIO S
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, LTC and LT are registered trademarks of Linear Technology Corporation.
DDR SDRAM Termination
SSTL_2 Interface
SSTL_3 Interface
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TYPICAL APPLICATIO
VDDQ
2.5V
5V
Efficiency vs Load Current
+
MBR0530T1
PVCC1
VCC
IMAX
C1
33pF
RC
15k
CC
1500pF
1k
LO
1.2µH
0.1µF
VTT
1.25V
±6A
LTC3831 IFB
FREQSET
SHDN
MBRS340T3
TG
SS
0.01µF
130k
80
Q1
10k
BG
SHDN
PGND
COMP
GND
R+
R–
Q2
MBRS340T3
+
CIN: SANYO POSCAP 6TPB330M
COUT: SANYO POSCAP 4TPB470M
Q1, Q2: SILICONIX Si4410DY
FB
EFFICIENCY (%)
PVCC2
0.1µF
4.7µF
90
0.1µF
1µF
+
100
CIN
330µF
×2
70
60
50
40
30
COUT
470µF
×3
TA = 25°C
VIN = 2.5V
VOUT = 1.25V
20
10
3831 F01
0
0
1
3
4
2
LOAD CURRENT (A)
5
6
2831 G01
Figure 1. Typical DDR Memory Termination Application
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LTC3831
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ABSOLUTE
RATI GS
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PACKAGE/ORDER I FOR ATIO
(Note 1)
Supply Voltage
VCC ....................................................................... 9V
PVCC1,2 ................................................................ 14V
Input Voltage
IFB, IMAX ............................................... – 0.3V to 14V
R+, R–, FB, SHDN, FREQSET ..... – 0.3V to VCC + 0.3V
Junction Temperature (Note 9) ............................. 125°C
Operating Temperature Range (Note 4) .. – 40°C to 85°C
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
ORDER PART
NUMBER
TOP VIEW
TG
1
16 BG
PVCC1
2
15 PVCC2
PGND
3
14 VCC
GND
4
13 IFB
R–
5
12 IMAX
FB
6
11 FREQSET
R+
7
10 COMP
SHDN
8
9
LTC3831EGN
GN PART MARKING
3831
SS
GN PACKAGE
16-LEAD PLASTIC SSOP
TJMAX = 125°C, θJA = 130°C/ W
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes specifications that apply over the full operating temperature
range, otherwise specifications are at TA = 25°C. VCC, PVCC1, PVCC2 = 5V, VR+ = 2.5V, VR– = GND, unless otherwise noted. (Note 2)
SYMBOL
PARAMETER
CONDITIONS
VCC
Supply Voltage
PVCC
PVCC1, PVCC2 Voltage
VUVLO
Undervoltage Lockout Voltage
VFB
Feedback Voltage
VR+ = 2.5V, VR– = 0V, VCOMP = 1.25V
∆VOUT
Output Load Regulation
Output Line Regulation
IOUT = 0A to 10A (Note 6)
VCC = 4.75V to 5.25V
IVCC
Supply Current
Figure 2, VSHDN = VCC
VSHDN = 0V
●
●
0.7
1
1.6
10
mA
µA
IPVCC
PVCC Supply Current
Figure 2, VSHDN = VCC (Note 3)
VSHDN = 0V
●
●
14
0.1
20
10
mA
µA
∆fOSC
Internal Oscillator Frequency
FREQSET Floating
●
200
240
kHz
VSAWL
VCOMP at Minimum Duty Cycle
1.2
V
VSAWH
VCOMP at Maximum Duty Cycle
2.2
V
VCOMPMAX
Maximum VCOMP
(Note 7)
MIN
TYP
●
3
5
●
3
●
1.231
160
VFB = 0V, PVCC1 = 8V
8
V
V
2.4
2.9
V
1.25
1.269
V
10
AV
Error Amplifier Open-Loop DC Gain
●
46
55
gm
Error Amplifier Transconductance
●
520
650
ICOMP
Error Amplifier Output Sink/Source Current
IMAX
IMAX Sink Current
kHz/µA
dB
780
VIMAX = VCC (Note 6)
9
4
12
12
3300
µmho
µA
100
●
V
mV
mV
2.85
VIMAX = VCC
UNITS
13.2
2
0.1
∆fOSC/∆IFREQSET Frequency Adjustment
IMAX Sink Current Tempco
MAX
15
20
µA
µA
ppm/°C
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LTC3831
ELECTRICAL CHARACTERISTICS
The ● denotes specifications that apply over the full operating temperature
range, otherwise specifications are at TA = 25°C. VCC, PVCC1, PVCC2 = 5V, VR+ = 2.5V, VR– = GND, unless otherwise noted. (Note 2)
SYMBOL
PARAMETER
VIH
SHDN Input High Voltage
CONDITIONS
●
MIN
VIL
SHDN Input Low Voltage
●
IIN
SHDN Input Current
VSHDN = VCC
●
ISS
Soft-Start Source Current
VSS = 0V, VIMAX = 0V, VIFB = VCC
●
ISSIL
Maximum Soft-Start Sink Current
Undercurrent Limit
VIMAX = VCC, VIFB = 0V, VSS = VCC (Note 8),
PVCC1 = 8V
R+
R+ Input Resistance
tr, tf
Driver Rise/Fall Time
Figure 2, PVCC1 = PVCC2 = 5V (Note 5)
●
tNOV
Driver Nonoverlap Time
Figure 2, PVCC1 = PVCC2 = 5V (Note 5)
●
DCMAX
Maximum TG Duty Cycle
Figure 2, VFB = 0V (Note 5), PVCC1 = 8V
●
TYP
MAX
2.4
V
0.8
–8
V
0.1
1
µA
–12
–16
µA
1.6
mA
49.5
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: All currents into device pins are positive; all currents out of device
pins are negative. All voltages are referenced to ground unless otherwise
specified.
Note 3: Supply current in normal operation is dominated by the current
needed to charge and discharge the external FET gates. This will vary with
the LTC3831 operating frequency, operating voltage and the external FETs
used.
Note 4: The LTC3831EGN is guaranteed to meet performance
specifications from 0°C to 70°C. Specifications over the –40°C to 85°C
operating temperature range are assured by design, characterization and
correlation with statistical process controls.
UNITS
kΩ
80
250
ns
25
120
250
ns
91
95
%
Note 5: Rise and fall times are measured using 10% and 90% levels. Duty
cycle and nonoverlap times are measured using 50% levels.
Note 6: Guaranteed by design, not subject to test.
Note 7: PVCC1 must be higher than VCC by at least 2.5V for TG to operate
at 95% maximum duty cycle and for the current limit protection circuit to
be active.
Note 8: The current limiting amplifier can sink but cannot source current.
Under normal (not current limited) operation, the output current will be
zero.
Note 9: This IC includes overtemperature protection that is intended to protect
the device during momentary overload conditions. Junction temperature will
exceed 125°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may impair
device reliability.
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LTC3831
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TYPICAL PERFOR A CE CHARACTERISTICS
1.270
1.260
8
1.256
6
1.254
4
1.252
2
1.250
0
1.248
–2
1.246
–4
1.244
–6
1.242
–8
VFB (V)
1.255
10
TA = 25°C
1.258
1.250
1.245
1.240
1.235
1.230
–6
–4
–2
2
0
OUTPUT CURRENT (A)
4
1.240
6
4
3
6
7
5
SUPPLY VOLTAGE (V)
1.255
5
1.250
0
1.245
–5
1.240
–10
1.235
–15
–25
0
50
25
TEMPERATURE (°C)
75
–20
100
550
500
–50 –25
160
140
120
100
80
60
40
–50 –25
600
75
50
25
TEMPERATURE (°C)
0
100
OSCILLATOR FREQUENCY (kHz)
220
210
200
190
180
125
50
45
40
–50 –25
125
75
0
25
50
TEMPERATURE (°C)
100
125
3831 G07
Oscillator (VSAWH – VSAWL)
vs External Sync Frequency
1.5
TA = 25°C
1.4
500
TA = 25°C
1.3
VSAWH – VSAWL (V)
FREQSET FLOATING
100
55
Oscillator Frequency
vs FREQSET Input Current
230
50
25
75
0
TEMPERATURE (˚C)
3831 G06
240
OSCILLATOR FREQUENCY (kHz)
600
60
180
Oscillator Frequency
vs Temperature
400
300
200
1.2
1.1
1.0
0.9
0.8
0.7
100
0.6
170
160
–50
650
Error Amplifier Open-Loop Gain
vs Temperature
200
3831 G04
250
700
3831 G05
ERROR AMPLIFIER OPEN-LOOP GAIN (dB)
10
ERROR AMPLIFIER SINK/SOURCE CURRENT (µA)
15
∆VOUT (mV)
VOUT (V)
20
1.260
1.230
–50
750
Error Amplifier Sink/Source
Current vs Temperature
REFER TO FIGURE 1
OUTPUT = NO LOAD
1.265
800
3831 G03
Output Temperature Drift
1.270
–10
8
3831 G02
∆VFB (mV)
VOUT (V)
1.260
TA = 25°C
REFER TO FIGURE 1
NEGATIVE OUTPUT CURRENT
INDICATES CURRENT SINKING
1.265
Error Amplifier Transconductance
vs Temperature
Line Regulation
ERROR AMPLIFIER TRANSCONDUCTANCE (µmho)
Load Regulation
–25
0
25
75
50
TEMPERATURE (°C)
100
125
3831 G08
0
–40
10
–20
–10
0
–30
FREQSET INPUT CURRENT (µA)
20
3831 G09
0.5
100
300
200
400
EXTERNAL SYNC FREQUENCY (kHz)
500
3831 G10
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LTC3831
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TYPICAL PERFOR A CE CHARACTERISTICS
Maximum TG Duty Cycle
vs Temperature
VFB = 0V
REFER TO FIGURE 3
98
IMAX SINK CURRENT (µA)
MAXIMUM G1 DUTY CYCLE (%)
99
97
96
95
94
93
20
1.4
18
1.2
16
14
12
10
8
6
91
–50
4
– 50 – 25
0
25
75
50
TEMPERATURE (°C)
100
125
100
SOFT-START SOURCE CURRENT (µA)
OUTPUT CURRENT LIMIT (A)
8
7
6
5
4
3
2
1
–9
1.75
–10
–11
–12
–13
–14
–15
75
50
25
TEMPERATURE (°C)
0
100
1.25
1.00
0.75
0.50
0.25
0
–150
125
2.6
2.5
2.4
2.3
2.2
2.1
125
3831 G17
–125
–100
–50
–75
VIFB – VIMAX (mV)
–25
PVCC Supply Current
vs Oscillator Frequency
90
FREQSET FLOATING
TA = 25°C
80
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
TG AND BG LOADED
WITH 6800pF,
PVCC1,2 = 12V
70
60
50
TG AND BG
LOADED
WITH 1000pF,
PVCC1,2 = 5V
40
30
TG AND BG
LOADED
WITH 6800pF,
PVCC1,2 = 5V
20
10
0.5
0.4
–50
0
3831 G16
PVCC SUPPLY CURRENT (mA)
VCC OPERATING SUPPLY CURRENT (mA)
UNDERVOLTAGE LOCKOUT THRESHOLD VOLTAGE (V)
2.7
1.5
10
TA = 25°C
3831 G15
1.6
2.8
8
6
4
OUTPUT CURRENT (A)
1.50
VCC Operating Supply Current
vs Temperature
2.9
2
3831 G13
2.00
–16
– 50 – 25
125
3.0
100
0
–8
Undervoltage Lockout Threshold
Voltage vs Temperature
50
25
0
75
TEMPERATURE (°C)
TA = 25°C
REFER TO FIGURE 1
Soft-Start Sink Current
vs (VIFB – VIMAX)
3831 G14
2.0
–50 –25
125
SOFT-START SINK CURRENT (mA)
REFER TO FIGURE 1
100
0.4
Soft-Start Source Current
vs Temperature
9
50
25
0
75
TEMPERATURE (°C)
0.6
3831 G12
Output Current Limit Threshold
vs Temperature
0
–50 –25
0.8
0
75
50
25
TEMPERATURE (°C)
0
3831 G11
10
1.0
0.2
92
–25
Output Overcurrent Protection
OUTPUT VOLTAGE (V)
100
IMAX Sink Current
vs Temperature
–25
50
25
0
75
TEMPERATURE (°C)
100
125
3831 G18
0
0
400
100
300
200
OSCILLATOR FREQUENCY (kHz)
500
3831 G19
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LTC3831
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TYPICAL PERFOR A CE CHARACTERISTICS
PVCC Supply Current
vs Gate Capacitance
200
TA = 25°C
40
VOUT
50mV/DIV
160
PVCC1,2 = 12V
30
20
PVCC1,2 = 5V
10
140
120
tf AT PVCC1,2 = 5V
100
60
40
0
1 2 3 4 5 6 7 8 9 10
GATE CAPACITANCE AT TG AND BG (nF)
ILOAD
2A/DIV
tr AT PVCC1,2 = 5V
80
tf AT PVCC1,2 = 12V
20
0
Transient Response
TA = 25°C
180
TG RISE/FALL TIME (ns)
PVCC SUPPLY CURRENT (mA)
50
TG Rise/Fall Time
vs Gate Capacitance
0
50µs/DIV
3831 G22.tif
tr AT PVCC1,2 = 12V
0
1 2 3 4 5 6 7 8 9 10
GATE CAPACITANCE AT TG AND BG (nF)
3831 G20
3831 G21
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PI FU CTIO S
TG ( Pin 1): Top Driver Output. Connect this pin to the gate
of the upper N-channel MOSFET, Q1. This output swings
from PGND to PVCC1. It remains low if BG is high or during
shutdown mode.
PVCC1 (Pin 2): Power Supply Input for TG. Connect this pin
to a potential of at least VIN + VGS(ON)(Q1). This potential
can be generated using an external supply or a simple
charge pump connected to the switching node between
the upper MOSFET and the lower MOSFET.
PGND (Pin 3): Power Ground. Both drivers return to this
pin. Connect this pin to a low impedance ground in close
proximity to the source of Q2. Refer to the Layout Consideration section for more details on PCB layout techniques.
GND (Pin 4): Signal Ground. All low power internal circuitry returns to this pin. To minimize regulation errors
due to ground currents, connect GND to PGND right at the
LTC3831.
R–, R+ (Pins 5, 7): These two pins connect to the internal
resistor divider that generate the internal ratiometric reference for the error amplifier. The reference voltage is set
at 0.5 • (VR+ – VR–).
reference under closed-loop conditions. The LTC3831 can
operate with a minimum VFB of 1.1V and maximum VFB of
(VCC – 1.75V).
SHDN (Pin 8): Shutdown. A TTL compatible low level at
SHDN for longer than 100µs puts the LTC3831 into
shutdown mode. In shutdown, TG and BG go low, all
internal circuits are disabled and the quiescent current
drops to 10µA max. A TTL compatible high level at SHDN
allows the part to operate normally. This pin also double as
an external clock input to synchronize the internal oscillator with an external clock.
SS (Pin 9): Soft-Start. Connect this pin to an external
capacitor, CSS, to implement a soft-start function. If the
LTC3831 goes into current limit, CSS is discharged to
reduce the duty cycle. CSS must be selected such that
during power-up, the current through Q1 will not exceed
the current limit level.
COMP (Pin 10): External Compensation. This pin internally connects to the output of the error amplifier and input
of the PWM comparator. Use a RC + C network at this pin
to compensate the feedback loop to provide optimum
transient response.
FB (Pin 6): Feedback Voltage. FB senses the regulated
output voltage either directly or through an external resistor divider. The FB pin is servoed to the ratiometric
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LTC3831
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PI FU CTIO S
FREQSET (Pin 11): Frequency Set. Use this pin to adjust
the free-running frequency of the internal oscillator. With
the pin floating, the oscillator runs at about 200kHz. A
resistor from FREQSET to ground speeds up the oscillator;
a resistor to VCC slows it down.
voltage transients from damaging IFB.This pin is used for
sensing the voltage drop across the upper N-channel
MOSFET, Q1.
VCC (Pin 14): Power Supply Input. All low power internal
circuits draw their supply from this pin. This pin requires
a 4.7µF bypass capacitor to GND.
IMAX (Pin 12): Current Limit Threshold Set. IMAX sets the
threshold for the internal current limit comparator. If IFB
drops below IMAX with TG on, the LTC3831 goes into
current limit. IMAX has an internal 12µA pull-down to GND.
Connect this pin to the main VIN supply at the drain of Q1,
through an external resistor to set the current limit threshold. Connect a 0.1µF decoupling capacitor across this
resistor to filter switching noise.
PVCC2 (Pin 15): Power Supply Input for BG. Connect this
pin to the main high power supply.
BG (Pin 16): Bottom Driver Output . Connect this pin to the
gate of the lower N-channel MOSFET, Q2. This output
swings from PGND to PVCC2. It remains low when TG is
high or during shutdown mode. To prevent output undershoot during a soft-start cycle, BG is held low until TG first
goes high (FFBG in the Block Diagram).
IFB (Pin 13): Current Limit Sense. Connect this pin to the
switching node at the source of Q1 and the drain of Q2
through a 1k resistor. The 1k resistor is required to prevent
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BLOCK DIAGRA
DISABLE GATE DRIVE
LOGIC AND
THERMAL SHUTDOWN
100µs DELAY
SHDN
VCC
POWER DOWN
INTERNAL
OSCILLATOR
PVCC1
–
FREQSET
+
COMP
S
Q
TG
R
Q
PVCC2
PWM
BG
FFBG
12µA
S
QSS
SS
POR
Q
PGND
ENABLE
BG
R
FB
R+
ERR
+
MIN
–
–
MAX
+
+
–
24k
VREF + 3%
750Ω
VREF – 3%
VREF
VREF
VREF + 3%
750Ω
CC
2.2V
QC
DISABLE
ILIM
–
IFB
+
IMAX
VREF – 3%
24k
R–
12µA
+
1.2V
PVCC1
GND
3830 BD
V
–
VCC1 + 2.5V
3831f
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LTC3831
TEST CIRCUITS
PVCC
+
VSHDN VCC
10µF
SHDN
NC
NC
VFB
VCOMP
2.5V
PVCC2 PVCC1
VCC
SS
FREQSET
FB
COMP
R+
0.1µF
IFB
TG
TG RISE/FALL
6800pF
LTC3831
BG
R–
IMAX
GND
PGND
BG RISE/FALL
6800pF
3831 F02
Figure 2
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APPLICATIO S I FOR ATIO
OVERVIEW
The LTC3831 is a voltage mode feedback, synchronous
switching regulator controller (see Block Diagram) designed for use in high to medium power, DDR memory
termination. It includes an onboard PWM generator, a
ratiometric reference, two high power MOSFET gate drivers and all necessary feedback and control circuitry to
form a complete switching regulator circuit. The PWM
loop nominally runs at 200kHz.
The LTC3831 is designed to generate an output voltage that
tracks at 1/2 of the external voltage connected between the
R+ and R– pins. The LTC3831 can be used to generate the
termination voltage, VTT, for interface like the SSTL_2 where
VTT is a ratio of the interface supply voltage, VDDQ. It is a
requirement in the SSTL_2 interface standard for VTT to
track the interface supply voltage to improve noise immunity. Using the LTC3831 to supply the interface termination voltage allows large current sourcing and sinking
through the termination resistors during bus transitions.
The LTC3831 includes a current limit sensing circuit that
uses the topside external N-channel power MOSFET as a
current sensing element, eliminating the need for an
external sense resistor. Also included is an internal softstart feature that requires only a single external capacitor
to operate. In addition, the part features an adjustable
oscillator which can free run or synchronize to an external
signal with frequencies from 100kHz to 500kHz, allowing
added flexibility in external component selection.
THEORY OF OPERATION
Primary Feedback Loop
The LTC3831 senses the output voltage of the circuit
through the FB pin and feeds this voltage back to the
internal transconductance error amplifier, ERR. The error
amplifier compares the output voltage to the internal
ratiometric reference, VREF, and outputs an error signal to
the PWM comparator. VREF is set to 0.5 multiplied by the
voltage difference between the R+ and R– pins, using an
internal resistor divider.
This error signal is compared with a fixed frequency ramp
waveform, from the internal oscillator, to generate a pulse
width modulated signal. This PWM signal drives the
external MOSFETs through the TG and BG pins. The
resulting chopped waveform is filtered by LO and COUT
which closes the loop. Loop compensation is achieved
with an external compensation network at the COMP pin,
the output node of the error amplifier.
MIN, MAX Feedback Loops
Two additional comparators in the feedback loop provide
high speed output voltage correction in situations where
the error amplifier may not respond quickly enough. MIN
compares the feedback signal to a voltage 3% below VREF.
If the signal is below the comparator threshold, the MIN
comparator overrides the error amplifier and forces the
loop to maximum duty cycle, >91%. Similarly, the MAX
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LTC3831
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APPLICATIO S I FOR ATIO
comparator forces the output to 0% duty cycle if the
feedback signal is greater than 3% above VREF. To prevent
these two comparators from triggering due to noise, the
MIN and MAX comparators’ response times are deliberately delayed by two to three microseconds. These two
comparators help prevent extreme output perturbations
with fast output load current transients, while allowing the
main feedback loop to be optimally compensated for
stability.
Thermal Shutdown
The LTC3831 has a thermal protection circuit that disables
both gate drivers if activated. If the chip junction temperature reaches 150°C, both TG and BG are pulled low. TG and
BG remain low until the junction temperature drops below
125°C, after which, the chip resumes normal operation.
Soft-Start and Current Limit
The LTC3831 includes a soft-start circuit that is used for
start-up and current limit operation. The SS pin requires
an external capacitor, CSS, to GND with the value determined by the required soft-start time. An internal 12µA
current source is included to charge CSS. During powerup, the COMP pin is clamped to a diode drop (B-E junction
of QSS in the Block Diagram) above the voltage at the SS
pin. This prevents the error amplifier from forcing the loop
to maximum duty cycle. The LTC3831 operates at low duty
cycle as the SS pin rises above 0.6V (VCOMP ≈ 1.2V). As SS
continues to rise, QSS turns off and the error amplifier
takes over to regulate the output. The MIN comparator is
disabled during soft-start to prevent it from overriding the
soft-start function.
The LTC3831 includes yet another feedback loop to control operation in current limit. Just before every falling
edge of TG, the current comparator, CC, samples and
holds the voltage drop measured across the external
upper MOSFET, Q1, at the IFB pin. CC compares the voltage
at IFB to the voltage at the IMAX pin. As the peak current
rises, the measured voltage across Q1 increases due to the
drop across the RDS(ON) of Q1. When the voltage at IFB
drops below IMAX, indicating that Q1’s drain current has
exceeded the maximum level, CC starts to pull current out
of CSS, cutting the duty cycle and controlling the output
current level. The CC comparator pulls current out of the
SS pin in proportion to the voltage difference between IFB
and IMAX. Under minor overload conditions, the SS pin
falls gradually, creating a time delay before current limit
takes effect. Very short, mild overloads may not affect the
output voltage at all. More significant overload conditions
allow the SS pin to reach a steady state, and the output
remains at a reduced voltage until the overload is removed. Serious overloads generate a large overdrive at
CC, allowing it to pull SS down quickly and preventing
damage to the output components. By using the RDS(ON)
of Q1 to measure the output current, the current limiting
circuit eliminates an expensive discrete sense resistor that
would otherwise be required. This helps minimize the
number of components in the high current path.
The current limit threshold can be set by connecting an
external resistor RIMAX from the IMAX pin to the main VIN
supply at the drain of Q1. The value of RIMAX is determined
by:
RIMAX = (ILMAX)(RDS(ON)Q1)/IIMAX
where:
ILMAX = ILOAD + (IRIPPLE/2)
ILOAD= Maximum load current
IRIPPLE = Inductor ripple current
=
( VIN – VOUT )( VOUT )
(fOSC )(LO )(VIN)
fOSC = LTC3831 oscillator frequency = 200kHz
LO = Inductor value
RDS(ON)Q1 = On-resistance of Q1 at ILMAX
IIMAX = Internal 12µA sink current at IMAX
The RDS(ON) of Q1 usually increases with temperature. To
keep the current limit threshold constant, the internal
12µA sink current at IMAX is designed with a positive
temperature coefficient to provide first order correction
for the temperature coefficient of RDS(ON)Q1.
In order for the current limit circuit to operate properly and
to obtain a reasonably accurate current limit threshold, the
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IIMAX and IFB pins must be Kelvin sensed at Q1’s drain and
source pins. In addition, connect a 0.1µF decoupling
capacitor across RIMAX to filter switching noise. Otherwise, noise spikes or ringing at Q1’s source can cause the
actual current limit to be greater than the desired current
limit set point. Due to switching noise and variation of
RDS(ON), the actual current limit trip point is not highly
accurate. The current limiting circuitry is primarily meant
to prevent damage to the power supply circuitry during
fault conditions. The exact current level where the limiting
circuit begins to take effect will vary from unit to unit as the
RDS(ON) of Q1 varies. Typically, RDS(ON) varies as much as
±40% and with ±25% variation on the LTC3831’s IMAX
current, this can give a ±65% variation on the current limit
threshold.
The RDS(ON) is high if the VGS applied to the MOSFET is
low. This occurs during power up, when PVCC1 is ramping
up. To prevent the high RDS(ON) from activating the current
limit, the LTC3831 disables the current limit circuit if
PVCC1 is less than 2.5V above VCC. To ensure proper
operation of the current limit circuit, PVCC1 must be at
least 2.5V above VCC when TG is high. PVCC1 can go low
when TG is low, allowing the use of an external charge
pump to power PVCC1.
VIN
LTC3831
RIMAX
+
12µA
CC
CIN
12
IMAX
IFB
–
+
0.1µF
TG
Q1
LO
1k
13
BG
Q2
+
VOUT
COUT
3831 F03
Figure 3. Current Limit Setting
Oscillator Frequency
The LTC3831 includes an onboard current controlled
oscillator that typically free-runs at 200kHz. The oscillator
frequency can be adjusted by forcing current into or out of
the FREQSET pin. With the pin floating, the oscillator runs
at about 200kHz. Every additional 1µA of current into/out
of the FREQSET pin decreases/increases the frequency by
10kHz. The pin is internally servoed to 1.265V, connecting
a 50k resistor from FREQSET to ground forces 25µA out of
the pin, causing the internal oscillator to run at approximately 450kHz. Forcing an external 10µA current into
FREQSET cuts the internal frequency to 100kHz. An internal clamp prevents the oscillator from running slower than
about 50kHz. Tying FREQSET to VCC forces the chip to run
at this minimum speed.
Shutdown
The LTC3831 includes a low power shutdown mode,
controlled by the logic at the SHDN pin. A high at SHDN
allows the part to operate normally. A low level at SHDN for
more than 100µs forces the LTC3831 into shutdown
mode. In this mode, all internal switching stops, the COMP
and SS pins pull to ground and Q1 and Q2 turn off. The
LTC3831 supply current drops to <10µA, although offstate leakage in the external MOSFETs may cause the total
VIN current to be somewhat higher, especially at elevated
temperatures. If SHDN returns high, the LTC3831 reruns
a soft-start cycle and resumes normal operation.
External Clock Synchronization
The LTC3831 SHDN pin doubles as an external clock input
for applications that require a synchronized clock. An
internal circuit forces the LTC3831 into external synchronization mode if a negative transition at the SHDN pin is
detected. In this mode, every negative transition on the
SHDN pin resets the internal oscillator and pulls the ramp
signal low. This forces the LTC3831 internal oscillator to
lock to the external clock frequency.
The LTC3831 internal oscillator can be externally synchronized from 100kHz to 500kHz. Frequencies above 300kHz
can cause a decrease in the maximum obtainable duty
cycle as rise/fall time and propagation delay take up a
larger percentage of the switch cycle. The low period of
this clock signal must not be >100µs or else the LTC3831
enters into the shutdown mode.
Figure 4 describes the operation of the external synchronization function. A negative transition at the SHDN pin
forces the internal ramp signal low to restart a new PWM
cycle. Notice that the ramp amplitude is lowered as the
external clock frequency goes higher. The effect of this
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Gate drive for the top N-channel MOSFET Q1 is supplied
from PVCC1. This supply must be above VIN (the main
power supply input) by at least one power MOSFET
VGS(ON) for efficient operation. An internal level shifter
allows PVCC1 to operate at voltages above VCC and VIN, up
to 14V maximum. This higher voltage can be supplied with
a separate supply, or it can be generated using a charge
pump.
SHDN
TRADITIONAL
SYNC METHOD
WITH EARLY
RAMP
TERMINATION
200kHz
FREE RUNNING
RAMP SIGNAL
RAMP SIGNAL
WITH EXT SYNC
Gate drive for the bottom MOSFET Q2 is provided through
PVCC2. This supply only need to be above the power
MOSFET VGS(ON) for efficient operation. PVCC2 can also be
driven from the same supply/charge pump for the PVCC1,
or it can be connected to a lower supply to improve
efficiency.
RAMP AMPLITUDE
ADJUSTED
LTC3831
KEEPS RAMP
AMPLITUDE
CONSTANT
UNDER SYNC
3831 F04
Figure 4. External Synchronization Operation
decrease in ramp amplitude increases the open-loop gain
of the controller feedback loop. As a result, the loop
crossover frequency increases and it may cause the feedback loop to be unstable if the phase margin is insufficient.
To overcome this problem, the LTC3831 monitors the
peak voltage of the ramp signal and adjust the oscillator
charging current to maintain a constant ramp peak.
Figure 6 shows a doubling charge pump circuit that can be
used to provide 2VIN gate drive for Q1. The charge pump
consists of a Schottky diode from VIN to PVCC1 and a 0.1µF
capacitor from PVCC1 to the switching node at the drain of
VCC
PVCC2
PVCC1
VIN
TG
Q1
LO
INTERNAL
CIRCUITRY
VOUT
+
BG
COUT
Q2
LTC3831
3831 F05
Figure 5. Supplies Input
Input Supply Considerations/Charge Pump
The LTC3831 requires four supply voltages to operate: VIN
for the main power input, PVCC1 and PVCC2 for MOSFET
gate drive and a clean, low ripple VCC for the LTC3831
internal circuitry (Figure 5).
In many applications, VCC can be powered from VIN
through an RC filter. This supply can be as low as 3V. The
low quiescent current (typically 800µA) allows the use of
relatively large filter resistors and correspondingly small
filter capacitors. 100Ω and 4.7µF usually provide adequate filtering for VCC. For best performance, connect the
4.7µF bypass capacitor as close to the LTC3831 VCC pin as
possible.
VIN
OPTIONAL
USE FOR VIN ≥ 7V
DZ
12V
1N5242
MBR0530T1
PVCC2
PVCC1
TG
0.1µF
Q1
LO
VOUT
BG
+
Q2
LTC3831
COUT
3831 F06a
Figure 6. Doubling Charge Pump
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Q2. This circuit provides 2VIN – VF to PVCC1 while Q1 is ON
and VIN – VF while Q1 is OFF where VF is the forward voltage
of the Schottky diode. Ringing at the drain of Q2 can cause
transients above 2VIN at PVCC1; if VIN is higher than 7V, a
12V zener diode should be included from PVCC1 to PGND
to prevent transients from damaging the circuitry at PVCC1
or the gate of Q1.
DZ
12V
1N5242
10µF
1N5817
VIN
1N5817
1N5817
PVCC2
PVCC1
TG
0.1µF
0.1µF
Q1
LO
VOUT
For applications with a lower VIN supply, a tripling charge
pump circuit shown in Figure 7 can be used to provide 2VIN
and 3VIN gate drive for the external top and bottom
MOSFETs respectively. This circuit provides 3VIN – 3VF to
PVCC1 while Q1 is ON and 2VIN – 2VF to PVCC2 where VF is
the forward voltage of the Schottky diode. The circuit
requires the use of Schottky diodes to minimize forward
drop across the diodes at start-up. The tripling charge
pump circuit can rectify any ringing at the drain of Q2 and
provide more than 3VIN at PVCC1; a 12V zener diode should
be included from PVCC1 to PGND to prevent transients
from damaging the circuitry at PVCC1 or the gate of Q1.
The charge pump capacitors for PVCC1 refresh when the
BG pin goes high and the switch node is pulled low by Q2.
The BG on time becomes narrow when the LTC3831
operates at maximum duty cycle (95% typical) which can
occur if the input supply rises more slowly than the softstart capacitor or the input voltage droops during load
transients. If the BG on time gets so narrow that the switch
node fails to pull completely to ground, the charge pump
voltage may collapse or fail to start causing excessive
dissipation in external MOSFET Q1. This is most likely with
low VCC voltages and high switching frequencies, coupled
with large external MOSFETs that slow the BG and switch
node slew rates.
The LTC3831 overcomes this problem by sensing the
PVCC1 voltage when TG is high. If PVCC1 is less than 2.5V
above VCC, the maximum TG duty cycle is reduced to 70%
by clamping the COMP pin at 1.8V (QC in the Block
Diagram). This increases the BG on time and allows the
charge pump capacitors to be refreshed.
BG
+
Q2
COUT
3831 F07
LTC3831
Figure 7. Tripling Charge Pump
For applications using an external supply to power PVCC1,
this supply must also be higher than VCC by at least 2.5V
to ensure normal operation.
Connecting the Ratiometric Reference Input
The LTC3831 derives its ratiometric reference, V REF,
using an internal resistor divider. The top and bottom of
the resistor divider is connected to the R+ and R – pins
respectively. This permits the output voltage to track at a
ratio of the differential voltage at R+ and R –.
The LTC3831 can operate with a minimum VFB of 1.1V and
maximum VFB of (VCC – 1.75V). With R– connected to
GND, this gives a VR+ input range of 2.2V to (2 • VCC –
3.5V). If VR+ is higher than the permitted input voltage,
increase the VCC voltage to raise the input range.
In a typical DDR memory termination application as shown
in Figure 1, R+ is connected to VDDQ, the supply voltage of
the interface, and R – to GND. The output voltage VTT is
connected to the FB pin, so VTT = 0.5 • VDDQ.
If a ratio greater than 0.5 is desired, it can be achieved
using an external resistor divider connected to VTT and FB
pin. Figure 8 shows an application that generates a VTT of
0.6 • VDDQ.
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VDDQ
2.5V
5V
+
MBR0530T1
1µF
PVCC1
PVCC2
VCC
0.1µF
+
4.7µF
IMAX
C1
33pF
RC
15k
CC
1500pF
Q1
MBRS340T3
1k
LO
1.2µH
0.1µF
VTT
1.5V
± 6A
LTC3831 IFB
FREQSET
SHDN
0.1µF
TG
SS
0.01µF
130k
10k
CIN
330µF
×2
SHDN
PGND
COMP
GND
R+
R–
MBRS340T3
Q2
BG
+
CIN: SANYO POSCAP 6TPB330M
COUT: SANYO POSCAP 4TPB470M
Q1, Q2: SILICONIX Si4410DY
COUT
470µF
×3
2k
1%
FB
10k
1%
3831 F08
Figure 8. Typical Application with VTT = 0.6 • VDDQ
Power MOSFETs
Two N-channel power MOSFETs are required for most
LTC3831 circuits. These should be selected based primarily on threshold voltage and on-resistance considerations.
Thermal dissipation is often a secondary concern in high
efficiency designs. The required MOSFET threshold should
be determined based on the available power supply voltages and/or the complexity of the gate drive charge pump
scheme. In 3.3V input designs where an auxiliary 12V
supply is available to power PVCC1 and PVCC2, standard
MOSFETs with RDS(ON) specified at VGS = 5V or 6V can be
used with good results. The current drawn from this supply varies with the MOSFETs used and the LTC3831’s
operating frequency, but is generally less than 50mA.
LTC3831 applications that use 5V or lower VIN voltage and
doubling/tripling charge pumps to generate PVCC1 and
PVCC2, do not provide enough gate drive voltage to fully
enhance standard power MOSFETs. Under this condition,
the effective MOSFET RDS(ON) may be quite high, raising
the dissipation in the FETs and reducing efficiency. Logiclevel FETs are the recommended choice for 5V or lower
voltage systems. Logic-level FETs can be fully enhanced
with a doubler/tripling charge pump and will operate at
maximum efficiency.
After the MOSFET threshold voltage is selected, choose
the RDS(ON) based on the input voltage, the output voltage,
allowable power dissipation and maximum output current. In a typical LTC3831 circuit operating in continuous
mode, the average inductor current is equal to the output
load current. This current flows through either Q1 or Q2
with the power dissipation split up according to the duty
cycle:
VOUT
VIN
V
V –V
DC(Q2) = 1 – OUT = IN OUT
VIN
VIN
DC(Q1) =
The RDS(ON) required for a given conduction loss can now
be calculated by rearranging the relation P = I2R.
RDS(ON)Q1 =
RDS(ON)Q2 =
PMAX(Q1)
DC(Q1) • (ILOAD )2
PMAX(Q2 )
DC(Q2) • (ILOAD)2
=
=
VIN • PMAX(Q1)
VOUT • (ILOAD )2
VIN • PMAX(Q2 )
( VIN – VOUT ) • (ILOAD)2
PMAX should be calculated based primarily on required
efficiency or allowable thermal dissipation. A typical high
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efficiency circuit designed for 2.5V input and 1.25V at 5A
output might allow no more than 3% efficiency loss at full
load for each MOSFET. Assuming roughly 90% efficiency
at this current level, this gives a PMAX value of:
decreases the MOSFET cost and the circuit efficiency and
increases the MOSFET heat sink requirements.
Table 1 highlights a variety of power MOSFETs that are for
use in LTC3831 applications.
(1.25V)(5A/0.9)(0.03) = 0.21W per FET
Inductor Selection
and a required RDS(ON) of:
(2.5V) • (0.21W)
= 0.017Ω
(1.25V)(5A)2
(2.5V) • (0.21W)
= 0.017Ω
RDS(ON)Q2 =
(2.5V – 1.25V)(5A)2
RDS(ON)Q1 =
Note that while the required RDS(ON) values suggest large
MOSFETs, the power dissipation numbers are only 0.21W
per device or less; large TO-220 packages and heat sinks
are not necessarily required in high efficiency applications.
Siliconix Si4410DY or International Rectifier IRF7413 (both
in SO-8) or Siliconix SUD50N03-10 (TO-252) or ON Semiconductor MTD20N03HDL (DPAK) are small footprint
surface mount devices with RDS(ON) values below 0.03Ω at
5V of VGS that work well in LTC3831 circuits. Using a
higher PMAX value in the RDS(ON) calculations generally
The inductor is often the largest component in an LTC3831
design and must be chosen carefully. Choose the inductor
value and type based on output slew rate requirements. The
maximum rate of rise of inductor current is set by the
inductor’s value, the input-to-output voltage differential and
the LTC3831’s maximum duty cycle. In a typical 2.5V input
1.25V output application, the maximum rise time will be:
DCMAX • ( VIN – VOUT ) 1.138 A
=
LO
LO µs
where LO is the inductor value in µH. With proper frequency compensation, the combination of the inductor
and output capacitor values determine the transient recovery time. In general, a smaller value inductor improves
transient response at the expense of ripple and inductor
core saturation rating. A 2µH inductor has a 0.57A/µs rise
Table 1. Recommended MOSFETs for LTC3831 Applications
PARTS
RDS(ON)
AT 25°C (mΩ)
RATED CURRENT (A)
TYPICAL INPUT
CAPACITANCE
CISS (pF)
θJC (°C/W)
TJMAX (°C)
1.8
175
Siliconix SUD50N03-10
TO-252
19
15 at 25°C
10 at 100°C
3200
Siliconix Si4410DY
SO-8
20
10 at 25°C
8 at 70°C
2700
ON Semiconductor MTD20N03HDL
D PAK
35
20 at 25°C
16 at 100°C
880
1.67
150
Fairchild FDS6670A
S0-8
8
13 at 25°C
3200
25
150
Fairchild FDS6680
SO-8
10
11.5 at 25°C
2070
25
150
ON Semiconductor MTB75N03HDL
DD PAK
9
75 at 25°C
59 at 100°C
4025
1
150
IR IRL3103S
DD PAK
19
64 at 25°C
45 at 100°C
1600
1.4
175
IR IRLZ44
TO-220
28
50 at 25°C
36 at 100°C
3300
1
175
Fuji 2SK1388
TO-220
37
35 at 25°C
1750
2.08
150
150
Note: Please refer to the manufacturer’s data sheet for testing conditions and detailed information.
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time in this application, resulting in a 8.8µs delay in
responding to a 5A load current step. During this 8.8µs,
the difference between the inductor current and the output
current is made up by the output capacitor. This action
causes a temporary voltage droop at the output. To
minimize this effect, the inductor value should usually be
in the 1µH to 5µH range for most LTC3831 circuits. To
optimize performance, different combinations of input
and output voltages and expected loads may require
different inductor values.
Once the required value is known, the inductor core type
can be chosen based on peak current and efficiency
requirements. Peak current in the inductor will be equal to
the maximum output load current plus half of the peak-topeak inductor ripple current. Ripple current is set by the
inductor value, the input and output voltage and the
operating frequency. The ripple current is approximately
equal to:
IRIPPLE =
( VIN − VOUT ) • ( VOUT )
fOSC • LO • VIN
fOSC = LTC3831 oscillator frequency = 200kHz
LO = Inductor value
Solving this equation with our typical 2.5V to 1.25V
application with 2µH inductor, we get:
(2.5V – 1.25V) • 1.25V
= 1.56 AP-P
200kHz • 2µH • 2.5V
Peak inductor current at 5A load:
5A + (1.56A/2) = 5.78A
The ripple current should generally be between 10% and
40% of the output current. The inductor must be able to
withstand this peak current without saturating, and the
copper resistance in the winding should be kept as low as
possible to minimize resistive power loss. Note that in
circuits not employing the current limit function, the
current in the inductor may rise above this maximum
under short circuit or fault conditions; the inductor should
be sized accordingly to withstand this additional current.
Inductors with gradual saturation characteristics are often
the best choice.
Input and Output Capacitors
A typical LTC3831 design places significant demands on
both the input and the output capacitors. During normal
steady load operation, a buck converter like the LTC3831
draws square waves of current from the input supply at the
switching frequency. The peak current value is equal to the
output load current plus 1/2 the peak-to-peak ripple current. Most of this current is supplied by the input bypass
capacitor. The resulting RMS current flow in the input
capacitor heats it and causes premature capacitor failure
in extreme cases. Maximum RMS current occurs with
50% PWM duty cycle, giving an RMS current value equal
to IOUT/2. A low ESR input capacitor with an adequate
ripple current rating must be used to ensure reliable
operation. Note that capacitor manufacturers’ ripple current ratings are often based on only 2000 hours (3 months)
lifetime at rated temperature. Further derating of the input
capacitor ripple current beyond the manufacturer’s specification is recommended to extend the useful life of the
circuit. Lower operating temperature has the largest effect
on capacitor longevity.
The output capacitor in a buck converter under steadystate conditions sees much less ripple current than the
input capacitor. Peak-to-peak current is equal to inductor
ripple current, usually 10% to 40% of the total load
current. Output capacitor duty places a premium not on
power dissipation but on ESR. During an output load
transient, the output capacitor must supply all of the
additional load current demanded by the load until the
LTC3831 adjusts the inductor current to the new value.
ESR in the output capacitor results in a step in the output
voltage equal to the ESR value multiplied by the change in
load current. A 5A load step with a 0.05Ω ESR output
capacitor results in a 250mV output voltage shift; this is
20% of the output voltage for a 1.25V supply! Because of
the strong relationship between output capacitor ESR and
output load transient response, choose the output capacitor for ESR, not for capacitance value. A capacitor with
suitable ESR will usually have a larger capacitance value
than is needed to control steady-state output ripple.
Electrolytic capacitors, such as the Sanyo MV-WX series,
rated for use in switching power supplies with specified
ripple current ratings and ESR, can be used effectively in
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A common way to lower ESR and raise ripple current
capability is to parallel several capacitors. A typical LTC3831
application might exhibit 5A input ripple current. Sanyo
OS-CON capacitors, part number 10SA220M (220µF/10V),
feature 2.3A allowable ripple current at 85°C; three in
parallel at the input (to withstand the input ripple current)
meet the above requirements. Similarly, Sanyo POSCAP
4TPB470M (470µF/4V) capacitors have a maximum rated
ESR of 0.04Ω, three in parallel lower the net output
capacitor ESR to 0.013Ω.
frequency for the overall open-loop transfer function. The
zero and pole from the compensation network are:
fZ = 1/[2π(RC)(CC)] and
fP = 1/[2π(RC)(C1)] respectively.
Figure 9b shows the Bode plot of the overall transfer
function.
Although a mathematical approach to frequency compensation can be used, the added complication of input and/or
output filters, unknown capacitor ESR, and gross operating point changes with input voltage, load current variations, all suggest a more practical empirical method. This
can be done by injecting a transient current at the load and
using an RC network box to iterate toward the final values,
or by obtaining the optimum loop response using a
network analyzer to find the actual loop poles and zeros.
LTC3831
VFB
–
LTC3831 applications. OS-CON electrolytic capacitors
from Sanyo and other manufacturers give excellent performance and have a very high performance/size ratio for
electrolytic capacitors. Surface mount applications can
use either electrolytic or dry tantalum capacitors. Tantalum capacitors must be surge tested and specified for use
in switching power supplies. Low cost, generic tantalums
are known to have very short lives followed by explosive
deaths in switching power supply applications. Other
capacitor series that can be used include Sanyo POSCAPs
and the Panasonic SP line.
COMP
10
6
VTT
ERR
+
RC
Feedback Loop Compensation
[
fLC = 1/ 2π (LO )(COUT )
]
3831 F09a
Figure 9a. Compensation Pin Hook-Up
fSW = LTC3831 SWITCHING
FREQUENCY
fCO = CLOSED-LOOP CROSSOVER
FREQUENCY
fZ
LOOP GAIN
Loop stability is affected by the values of the inductor, the
output capacitor, the output capacitor ESR, the error
amplifier transconductance and the error amplifier compensation network. The inductor and the output capacitor
create a double pole at the frequency:
VREF
C1
CC
The LTC3831 voltage feedback loop is compensated at the
COMP pin, which is the output node of the error amplifier.
The feedback loop is generally compensated with an RC +
C network from COMP to GND as shown in Figure 9a.
20dB/DECADE
The ESR of the output capacitor and the output capacitor
value form a zero at the frequency:
fESR = 1/ [2π (ESR)(COUT )]
The compensation network used with the error amplifier
must provide enough phase margin at the 0dB crossover
fP
fLC
fESR
fCO
FREQUENCY
3830 F10b
Figure 9b. Bode Plot of the LTC3831 Overall Transfer Function
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Table 2 shows the suggested compensation component
value for 2.5V to 1.25V applications based on the 470µF
Sanyo POSCAP 4TPB470M output capacitors.
LAYOUT CONSIDERATIONS
Table 3 shows the suggested compensation component
values for 2.5V to 1.25V applications based on 1500µF
Sanyo MV-WX output capacitors.
When laying out the printed circuit board, the following
checklist should be used to ensure proper operation of the
LTC3831. These items are also illustrated graphically in
the layout diagram of Figure 10. The thicker lines show the
high current paths. Note that at 5A current levels or above,
Table 2. Recommended Compensation Network for 2.5V to
1.25V Applications Using Multiple Paralleled 470µF Sanyo
POSCAP 4TPB470M Output Capacitors
Table 3. Recommended Compensation Network for 2.5V to
1.25V Applications Using Multiple Paralleled 1500µF Sanyo
MV-WX Output Capacitors
L1 (µH)
COUT (µF)
RC (kΩ)
CC (nF)
C1 (pF)
L1 (µH)
COUT (µF)
RC (kΩ)
CC (nF)
C1 (pF)
1.2
1410
6.8
3.3
33
1.2
4500
20
1.5
120
1.2
2820
15
3.3
33
1.2
6000
27
1
82
1.2
4700
22
1.5
33
1.2
9000
43
0.47
56
2.4
1410
15
10
33
2.4
4500
51
1
56
2.4
2820
36
3.3
10
2.4
6000
62
1
33
2.4
4700
47
4.7
10
2.4
9000
82
0.47
27
4.7
1410
33
10
10
4.7
4500
82
3.3
33
4.7
2820
68
22
10
4.7
6000
100
1
15
4.7
4700
120
10
10
4.7
9000
150
1
15
PVCC
VIN
100Ω
+
1µF
4.7µF
VCC
1µF
PVCC1
LTC3831
GND
FREQSET
IFB
SHDN
R+
COMP
BG
SS
C1
PGND
CIN
0.1µF
Q1
TG
IMAX
NC
10k
+
PVCC2
OPTIONAL
MBRS340T3
1k
VOUT
MBRS340T3
Q2
FB
+
R–
RC
CC
GND
CSS
LO
COUT
PGND
PGND
GND
3830 F11
Figure 10. Typical Schematic Showing Layout Considerations
3831f
17
LTC3831
U
W
U U
APPLICATIO S I FOR ATIO
current density in the PC board itself is a serious concern.
Traces carrying high current should be as wide as possible. For example, a PCB fabricated with 2oz copper
requires a minimum trace width of 0.15" to carry 5A.
1. In general, layout should begin with the location of the
power devices. Be sure to orient the power circuitry so that
a clean power flow path is achieved. Conductor widths
should be maximized and lengths minimized. After you are
satisfied with the power path, the control circuitry should
be laid out. It is much easier to find routes for the relatively
small traces in the control circuits than it is to find
circuitous routes for high current paths.
2. The GND and PGND pins should be shorted directly at
the LTC3831. This helps to minimize internal ground disturbances in the LTC3831 and prevents differences in
ground potential from disrupting internal circuit operation.
This connection should then tie into the ground plane at
a single point, preferably at a fairly quiet point in the circuit
such as close to the output capacitors. This is not always
practical, however, due to physical constraints. Another
reasonably good point to make this connection is between
the output capacitors and the source connection of the
bottom MOSFET Q2. Do not tie this single point ground in
the trace run between the Q2 source and the input capacitor ground, as this area of the ground plane will be very
noisy.
3. The small-signal resistors and capacitors for frequency
compensation and soft-start should be located very close
to their respective pins and the ground ends connected to
the signal ground pin through a separate trace. Do not
connect these parts to the ground plane!
4. The VCC, PVCC1 and PVCC2 decoupling capacitors should
be as close to the LTC3831 as possible. The 4.7µF and 1µF
bypass capacitors shown at VCC, PVCC1 and PVCC2 will help
provide optimum regulation performance.
5. The (+) plate of CIN should be connected as close as
possible to the drain of the upper MOSFET, Q1. An additional 1µF ceramic capacitor between VIN and power ground
is recommended.
6. The VFB pin is very sensitive to pickup from the switching node. Care should be taken to isolate VFB from possible
capacitive coupling to the inductor switching signal.
7. In a typical SSTL application, if the R+ pin is to be connected to VDDQ, which is also the main supply voltage for
the switching regulator, do not connect R+ along the high
current flow path; it should be connected to the SSTL interface supply output. R– should be connected to the interface supply GND.
8. Kelvin sense IMAX and IFB at Q1’s drain and source pins.
3831f
18
LTC3831
U
PACKAGE DESCRIPTIO
GN Package
16-Lead Plastic SSOP (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1641)
.189 – .196*
(4.801 – 4.978)
.045 ±.005
16 15 14 13 12 11 10 9
.254 MIN
.009
(0.229)
REF
.150 – .165
.229 – .244
(5.817 – 6.198)
.0165 ± .0015
.150 – .157**
(3.810 – 3.988)
.0250 TYP
RECOMMENDED SOLDER PAD LAYOUT
1
.015 ± .004
× 45°
(0.38 ± 0.10)
.007 – .0098
(0.178 – 0.249)
2 3
4
5 6
7
.053 – .068
(1.351 – 1.727)
8
.004 – .0098
(0.102 – 0.249)
0° – 8° TYP
.016 – .050
(0.406 – 1.270)
NOTE:
1. CONTROLLING DIMENSION: INCHES
INCHES
2. DIMENSIONS ARE IN
(MILLIMETERS)
.008 – .012
(0.203 – 0.305)
.0250
(0.635)
BSC
3. DRAWING NOT TO SCALE
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
GN16 (SSOP) 0502
3831f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
19
LTC3831
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
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LTC1778
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LTC1929
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with Mobile VID
Current Mode Ensures Accurate Current Sensing VIN Up to 36V,
IOUT Up to 40A
LTC3413
3A, Monolithic Synchronous Regulator for DDR/QDR
Memory Termination
Low RDS(ON) Internal Switch: 85mΩ, ±3A Output Current
(Sink and Source), VOUT = VREF/2
LTC3713
Low Input Voltage, High Power, No RSENSE, Step-Down
Synchronous Controller
Minimum VIN: 1.5V, Uses Standard Logic-Level N-Channel
MOSFETs
LTC3778
Wide Operating Range, No RSENSE, Step-Down Controller
VIN Up to 36V, Current Mode, Power Good, Stable with
Ceramic COUT
LTC3717
Wide VIN Step-Down Controller for DDR Memory Termination
Current Mode Operation, VOUT = 1/2 VIN, VOUT (VTT)
Tracks VIN (VDDQ), No RSENSE, Symmetrical Sink and Source
Output Current Limit
LTC3718
Bus termination Supply for Low Votlage VIN
1.5V ≤ VIN, Generates 5V Gate Drive for Standard N-Ch MOSFETs,
2A ≤ IOUT ≤ 25A
LTC3832
High Power Synchronous Switching Regulator Controller
VOUT as low as 0.6V
No RSENSE is a trademark of Linear Technology Corporation.
3831f
20
Linear Technology Corporation
LT/TP 0503 1K • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
 LINEAR TECHNOLOGY CORPORATION 2001