PHILIPS PESDXL4UW

DISCRETE SEMICONDUCTORS
DATA SHEET
PESDxL4UW series
Low capacitance quadruple ESD
protection array
Product specification
Supersedes data of 2003 Aug 15
2004 Apr 06
Philips Semiconductors
Product specification
Low capacitance quadruple ESD
protection array
PESDxL4UW series
FEATURES
DESCRIPTION
• Uni-directional ESD protection of four lines or
bi-directional ESD protection of 3 lines
Low capacitance quadruple ESD protection array in a five
pad SOT665 ultra small plastic package designed to
protect up to four transmission or data lines from
ElectroStatic Discharge (ESD) damage.
• Reverse standoff voltage: 3.3 and 5 V
• Low diode capacitance
• Ultra low leakage current
PINNING
• Ultra small SOT665 surface mount package
PIN
• ESD protection >20 kV
• IEC 61000-4-2; level 4 (ESD); 15 kV (air) or
8 kV (contact).
DESCRIPTION
1
cathode 1
2
common anode
3
cathode 2
APPLICATIONS
4
cathode 3
• Cellular handsets and accessories
5
cathode 4
• Portable electronics
• Computers and peripherals
handbook, halfpage
• Communication systems
5
4
5
4
• Audio and video equipment.
MARKING
TYPE NUMBER
1
MARKING CODE
PESD3V3L4UW
A2
PESD5V0L4UW
A1
2
3
1
2
3
MDB678
Fig.1 Simplified outline (SOT665) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PESD3V3L4UW
−
DESCRIPTION
plastic surface mounted package; 5 leads
PESD5V0L4UW
2004 Apr 06
2
VERSION
SOT665
Philips Semiconductors
Product specification
Low capacitance quadruple ESD
protection array
PESDxL4UW series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
peak pulse current
Ipp
CONDITIONS
MIN.
MAX.
UNIT
8/20 µs; notes 1 and 2
PESD3V3L4UW
−
3
A
−
2.5
A
Ppp
peak pulse power
8/20 µs; notes 1 and 2
−
30
W
IFSM
non-repetitive peak forward
current
tp = 1 ms; square pulse
−
3.5
A
IZSM
non-repetitive peak reverse
current
tp = 1 ms; square pulse
PESD3V3L4UW
−
0.9
A
PESD5V0L4UW
−
0.8
A
PESD5V0L4UW
Ptot
total power dissipation
Tamb = 25 °C; note 3
−
250
mW
PZSM
non-repetitive peak reverse
power dissipation
tp = 1 ms; square pulse; see Fig.4
−
6
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
ESD
electrostatic discharge
−
150
°C
IEC 61000-4-2 (contact discharge)
20
−
kV
HBM MIL-Std 883
10
−
kV
Notes
1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform see Fig.5.
2. Pins 1, 3, 4 or 5 to pin 2.
3. Device mounted on standard printed-circuit board.
ESD standards compliance
IEC 61000-4-2, level 4 (ESD)
>15 kV (air); >8 kV (contact)
HBM MIL-Std 883, class 3
>4 kV
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
all diodes loaded
370
K/W
Rth(j-sp)
thermal resistance from junction to solder point
one diode loaded; note 1
135
K/W
all diodes loaded; note 1
125
K/W
Notes
1. Solder point of common anode (pin 2).
2004 Apr 06
3
Philips Semiconductors
Product specification
Low capacitance quadruple ESD
protection array
PESDxL4UW series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
−
1
1.2
V
PESD3V3L4UW
−
−
3.3
V
PESD5V0L4UW
−
−
5
V
VF
forward voltage
VRWM
reverse stand-off voltage
IRM
V(CL)R
reverse leakage current
PESD3V3L4UW
VRWM = 3.3 V
−
75
300
nA
PESD5V0L4UW
VRWM = 5 V
−
5
25
nA
clamping voltage
Ipp = 1 A; note 1
−
−
8
V
Ipp = 3 A; note 1
−
−
12
V
Ipp = 1 A; note 1
−
−
10
V
Ipp = 2.5 A; note 1
−
−
13
V
5.32
5.6
5.88
V
6.46
6.8
7.14
V
PESD3V3L4UW
−
−
200
Ω
PESD5V0L4UW
−
−
100
Ω
f = 1 MHz; VR = 0 V
−
22
28
pF
f = 1 MHz; VR = 5 V
−
12
17
pF
f = 1 MHz; VR = 0 V
−
16
19
pF
f = 1 MHz; VR = 5 V
−
8
11
pF
PESD3V3L4UW
PESD5V0L4UW
VBR
IF = 200 mA
breakdown voltage
IZ = 1 mA
PESD3V3L4UW
PESD5V0L4UW
rdiff
Cd
differential resistance
IR = 1 mA
diode capacitance
PESD3V3L4UW
PESD5V0L4UW
Notes
1. Pins 1, 3, 4 or 5 to pin 2.
2004 Apr 06
4
Philips Semiconductors
Product specification
Low capacitance quadruple ESD
protection array
PESDxL4UW series
MDB602
10
MDB601
26
Cd
handbook, halfpage
handbook, halfpage
IZSM
(pF)
22
(A)
18
PESD3V3L4UW
1
PESD3V3L4UW
14
PESD5V0L4UW
PESD5V0L4UW
10
10−1
10−2
10−1
1
tp (ms)
6
10
1
0
2
3
4
5
VR (V)
Tj = 25 °C; f = 1 MHz.
Fig.2
Non-repetitive peak reverse current as a
function of pulse time (square pulse).
Fig.3
MDB603
102
handbook, halfpage
Diode capacitance as a function of reverse
voltage; typical values.
MLE218
120
handbook, halfpage
Ipp
(%)
PZSM
100 % Ipp; 8 µs
(W)
80
e−t
PESD3V3L4UW
10
50 % Ipp; 20 µs
PESD5V0L4UW
40
1
10−2
10−1
1
tp (ms)
0
10
0
10
20
30
t (µs)
40
PZSM = VZSM x IZSM.
VZSM is the non-repetitive peak reverse voltage at IZSM.
Fig.4
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
2004 Apr 06
Fig.5
5
8/20 µs pulse waveform according to
IEC 61000-4-5.
Philips Semiconductors
Product specification
Low capacitance quadruple ESD
protection array
handbook, full pagewidth
ESD TESTER
RZ
450 Ω
PESDxL4UW series
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
10 ×
ATTENUATOR
50 Ω
CZ
5
1
D.U.T.
PESDxL4UW
2
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
3
4
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
PESD5V0L4UW
GND2
PESD3V3L4UW
GND
GND1
unclamped +1 kV ESD voltage waveform
(IEC 1000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 1000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 1000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC 1000-4-2 network)
Fig.6 ESD clamping test set-up and waveforms.
2004 Apr 06
6
MDB605
Philips Semiconductors
Product specification
Low capacitance quadruple ESD
protection array
PESDxL4UW series
PACKAGE OUTLINE
Plastic surface mounted package; 5 leads
SOT665
D
E
A
X
Y S
S
HE
5
4
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT665
2004 Apr 06
EUROPEAN
PROJECTION
7
Philips Semiconductors
Product specification
Low capacitance quadruple ESD
protection array
PESDxL4UW series
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Apr 06
8
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA76
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/02/pp9
Date of release: 2004
Apr 06
Document order number:
9397 750 12933