MBR60100CT Vishay Semiconductors New Product formerly General Semiconductor Dual High-Voltage Schottky Rectifiers Reverse Voltage 100V Forward Current 60A Max. Junction Temperature 175°C Features TO-220AB (MBR60100CT) 0.398 (10.10) 0.382 (8.70) 0.055 (1.40) 0.047 (1.20) • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low leakage current, Low power loss, High efficiency • Guardring for overvoltage protection • For use in high frequency inverters, free wheeling, and polarity protection applications 0.185 (4.70) 0.169 (4.30) 0.150 (3.80) 0.343 (8.70) Typ. 0.139 (3.54) 0.055 (1.40) Dia. 0.049 (1.25) 0.114 (2.90) 0.106 (2.70) 0.154 (3.90) 0.138 (3.50) 0.067 (1.70) Typ. 1 PIN 2 0.638 (16.20) 0.598 (15.20) 0.634 (16.10) 0.618 (15.70) 0.331 (8.40) Typ. 3 0.370 (9.40) 0.354 (9.00) Mechanical Data 1.161 (29.48) 1.105 (28.08) 0.118 (3.00) Typ. Case: JEDEC TO-220AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds, 0.25" (6.35mm) from case (TO-220AB) at terminals Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08 oz., 2.24 g 0.102 (2.60) 0.087 (2.20) 0.035 (0.90) 0.028 (0.70) 0.100 (2.54) Typ. PIN 1 PIN 2 PIN 3 CASE 0.064 (1.62) 0.056 (1.42) 0.523 (13.28) 0.507 (12.88) 0.024 (0.60) 0.018 (0.45) 0.200 (5.08) Typ. Dimensions in inches and (millimeters) Maximum Ratings and Thermal Characteristics Parameter Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Total device Maximum average forward rectified current Per leg Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per leg Peak repetitive reverse current per leg at tp = 2µs, 1KHZ Peak non-repetitive reverse surge energy per leg (8/20µs waveform) Non-repetitive avalanche energy per leg at 25°C, IAS = 1.0A, L = 40mH Voltage rate of change (rated VR) Operating junction and storage temperature range Typical thermal resistance per leg Electrical Characteristics (T C Parameter Maximum instantaneous forward voltage per leg at(1): IF = IF = IF = IF = Maximum reverse current per leg at working peak reverse voltage MBR60100CT 100 100 100 60 30 Unit V V V IFSM 350 A IRRM 1.0 A ERSM 25 mJ IF(AV) A EAS 20 mJ dv/dt TJ, TSTG RΘJC 10,000 –65 to +175 0.5 V/µs °C °C/W = 25°C unless otherwise noted) Symbol 30A, 30A, 60A, 60A, (TC = 25°C unless otherwise noted) Symbol VRRM VRWM VDC TC = 25°C TC = 125°C TC = 25°C TC = 125°C TJ = 25°C TJ = 125°C VF IR Typ. 0.78 0.64 0.92 0.78 8.0 8.5 Max. 0.82 0.69 1.0 0.83 100 20 Unit V µA mA Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle Document Number 88892 10-May-04 www.vishay.com 1 MBR60100CT Vishay Semiconductors formerly General Semiconductor Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Per Leg Fig. 1 – Forward Derating Curve 70 400 Average Forward Current (A) Average Forward Current (A) 60 50 40 30 20 10 50 75 100 125 150 200 100 0 175 10 100 Number of Cycles at 60 HZ Fig. 3 – Typical Instantaneous Forward Characteristics Per Leg Fig. 4 – Typical Reverse Characteristics Per Leg 100 1000000 TJ = 175°C 100000 TJ = 175°C 10 150°C 125°C 1.0 25°C 0.1 150°C 10000 125°C 1000 100 10 25°C 1 0.01 0.0 0.1 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 60 70 80 90 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance Per Leg Fig. 6 – Typical Transient Thermal Impedance 1 1000 100 0.1 1 10 Vr, Reverse Voltage (V) www.vishay.com 2 100 Transient Thermal Impedance (°C/W) 10000 Junction Capacitance (pF) 1 Case Temperature (°C) IR -- Instantaneous Reverse Current (µA) IF -- Instantaneous Forward Current (A) 0 25 300 100 0.1 0.01 1 10 0.1 t, Pulse Duration (sec.) 100 Document Number 88892 10-May-04