IRF IRF7493

PD - 94654B
IRF7493
HEXFET® Power MOSFET
Applications
High frequency DC-DC converters
l
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
VDSS
RDS(on) max
Qg (typ.)
80V
15m:@VGS=10V
35nC
1
8
S
2
7
S
3
6
4
5
S
G
A
A
D
D
D
D
SO-8
Top View
Absolute Maximum Ratings
Max.
Units
VDS
Drain-to-Source Voltage
Parameter
80
V
VGS
Gate-to-Source Voltage
± 20
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
9.3
ID @ TC = 70°C
Continuous Drain Current, VGS @ 10V
7.4
IDM
Pulsed Drain Current
74
PD @TC = 25°C
Maximum Power Dissipation
PD @TC = 70°C
Maximum Power Dissipation
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
c
f
f
A
W
2.5
1.6
W/°C
°C
0.02
-55 to + 150
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Lead
Junction-to-Ambient
f
Typ.
Max.
–––
20
–––
50
Units
Notes  through … are on page 9
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1
7/29/03
IRF7493
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
80
–––
–––
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.074
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
11.5
15
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
VDS = 80V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
Gate-to-Source Reverse Leakage
–––
–––
-200
V
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 5.6A
e
VDS = 64V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
S
VDS = 15V, ID = 5.6A
gfs
Qg
Forward Transconductance
13
–––
–––
Total Gate Charge
–––
35
53
ID = 5.6A
Qgs
Gate-to-Source Charge
–––
5.7
–––
VDS = 40V
Qgd
Gate-to-Drain Charge
–––
12
–––
VGS = 10V
td(on)
Turn-On Delay Time
–––
8.3
–––
VDD = 40V,
tr
Rise Time
–––
7.5
–––
ID = 5.6A
td(off)
Turn-Off Delay Time
–––
30
–––
tf
Fall Time
–––
12
–––
VGS = 10V
Ciss
Input Capacitance
–––
1510
–––
VGS = 0V
Coss
Output Capacitance
–––
320
–––
Crss
Reverse Transfer Capacitance
–––
130
–––
ƒ = 1.0MHz
Coss
Output Capacitance
–––
1130
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
ns
pF
e
RG = 6.2Ω
VDS = 25V
Coss
Output Capacitance
–––
210
–––
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
Crss eff.
Effective Output Capacitance
–––
320
–––
VGS = 0V, VDS = 0V to 64V
g
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
–––
Max.
180
Units
mJ
–––
5.6
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
9.3
ISM
(Body Diode)
Pulsed Source Current
–––
–––
74
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
37
56
ns
Qrr
Reverse Recovery Charge
–––
52
78
nC
2
c
Conditions
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 5.6A, VGS = 0V
e
TJ = 25°C, IF = 5.6A, VDD = 15V
di/dt = 100A/µs
e
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IRF7493
100
100
VGS
15V
10V
8.0V
5.5V
5.0V
4.5V
4.0V
BOTTOM 3.5V
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1
3.5V
0.1
10
3.5V
1
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (Α)
15V
10V
8.0V
5.5V
5.0V
4.5V
4.0V
BOTTOM 3.5V
20µs PULSE WIDTH
Tj = 25°C
0.01
VGS
T J = 150°C
10.00
T J = 25°C
1.00
VDS = 25V
20µs PULSE WIDTH
0.10
ID = 9.3A
VGS = 10V
1.5
1.0
0.5
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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6.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7493
20
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds
= C gd
C oss = C ds + Cgd
10000
C, Capacitance (pF)
VGS, Gate-to-Source Voltage (V)
C rss
ID= 5.6A
SHORTED
Ciss
1000
Coss
Crss
100
VDS= 64V
VDS= 40V
VDS= 16V
16
12
8
4
0
10
1
10
0
100
10
VDS, Drain-to-Source Voltage (V)
100.0
40
50
60
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10.0
1.0
T J = 25°C
10
100µsec
0.1
0.1
0.2
0.4
0.6
0.8
1.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1.2
1msec
1
VGS = 0V
4
20
QG Total Gate Charge (nC)
Tc = 25°C
Tj = 150°C
Single Pulse
0
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7493
10
VDS
VGS
ID , Drain Current (A)
8
RD
D.U.T.
RG
+
-VDD
6
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
VDS
90%
0
25
50
75
100
125
150
T C , Case Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
Thermal Response ( Z thJC )
D = 0.50
0.20
0.10
10
0.05
0.02
1
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7493
0.030
RDS(on) , Drain-to -Source On Resistance ( Ω)
RDS (on) , Drain-to-Source On Resistance ( Ω)
0.013
0.012
0.020
VGS = 10V
0.011
ID = 5.6A
0.010
0
20
40
60
80
4.0
ID , Drain Current (A)
8.0
12.0
16.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
500
VG
EAS, Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
TOP
BOTTOM
400
ID
2.5A
4.5A
5.6A
300
200
100
0
A
25
50
75
100
125
150
Starting T J, Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7493
D.U.T
Driver Gate Drive
+
ƒ
+
-
-
„
D.U.T. ISD Waveform
Reverse
Recovery
Current

RG
P.W.
Period
*
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
‚
•
•
•
•
Period
P.W.
VDD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 17. Gate Charge Waveform
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7
IRF7493
SO-8 Package Details
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
e1
6X
e
e1
0.25 [.010]
MAX
.025 BAS IC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
A1
8X b
MILLIMET ERS
MAX
A
5
INCHES
MIN
y
0.10 [.004]
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS THE LENGT H OF LEAD FOR S OLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL
RECT IFIER
LOGO
8
YWW
XXXX
F7101
DAT E CODE (YWW)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
LOT CODE
PART NUMBER
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IRF7493
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
„ When mounted on 1 inch square copper board
… Coss eff. is a fixed capacitance that gives the same charging time
‚ Starting TJ = 25°C, L = 12mH
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 5.6A.
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.7/03
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