PD- 91100D IRF7201 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l A A D 1 8 S 2 7 D S 3 6 D 4 5 D S G VDSS = 30V RDS(on) = 0.030Ω Top View Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C VGS VGSM EAS dv/dt TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µs Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. Units 30 7.3 5.8 58 2.5 1.6 0.02 ± 20 30 70 5.0 -55 to + 150 V A W W/°C V V mJ V/ns °C Thermal Resistance Parameter RθJA www.irf.com Maximum Junction-to-Ambient Typ. Max. Units ––– 50 °C/W 1 08/15/03 IRF7201 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 ––– ––– ––– 1.0 5.8 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.024 ––– ––– ––– ––– ––– ––– ––– ––– 19 2.3 6.3 7.0 35 21 19 550 260 100 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.030 VGS = 10V, ID = 7.3A Ω 0.050 VGS = 4.5V, ID = 3.7A ––– V VDS = VGS, ID = 250µA ––– S VDS = 15V, ID = 2.3A 1.0 VDS = 24V, VGS = 0V µA 25 VDS = 24V, VGS = 0V, TJ = 125°C -100 VGS = -20V nA 100 VGS = 20V 28 ID = 4.6A 3.5 nC VDS = 24V 9.5 VGS = 10V, See Fig. 10 ––– VDD = 15V ––– ID = 4.6A ns ––– RG = 6.2Ω ––– RD = 3.2Ω, ––– VGS = 0V ––– pF VDS = 25V ––– ƒ = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units 2.5 58 ––– ––– ––– ––– 48 73 1.2 73 110 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 4.6A, VGS = 0V TJ = 25°C, IF = 4.6A di/dt = 100A/µs D S Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) VDD = 15V, starting TJ = 25°C, L = 6.6mH RG = 25Ω, IAS = 4.6A. (See Figure 8) 2 ISD ≤ 4.6A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t<10 sec www.irf.com IRF7201 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 1 0.1 10 3.0V 20µs PULSE WIDTH TJ = 25°C A 1 10 0.1 1 10 V DS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 ISD , Reverse Drain Current (A) 100 I D , Drain-to-Source Current (A) 20µs PULSE WIDTH TJ = 150°C A 1 TJ = 25°C TJ = 150°C 10 V DS = 10V 20µs PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com A 5.5 10 TJ = 150°C TJ = 25°C 1 VGS = 0V 0.1 0.4 0.6 0.8 1.0 A 1.2 VSD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 3 R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 I D = 4.6A 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 80 A R DS(on) , Drain-to-Source On Resistance (Ω) IRF7201 0.20 0.15 0.10 VGS = 4.5V 0.05 VGS = 10V 0.00 0 100 120 140 160 10 TJ , Junction Temperature (°C) E AS , Single Pulse Avalanche Energy (mJ) R DS(on) , Drain-to-Source On Resistance (Ω) 0.04 0.03 I D = 7.3A 0.02 6 8 10 12 14 V GS , Gate-to-Source Voltage (V) Fig 7. On-Resistance Vs. Gate Voltage 4 40 A Fig 6. On-Resistance Vs. Drain Current 0.05 4 30 I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature 2 20 16 A 200 TOP BOTTOM 160 ID 2.1A 3.7A 4.6A 120 80 40 A 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 8. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7201 1000 V GS , Gate-to-Source Voltage (V) 800 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd I D = 4.6A V DS = 24V V DS = 15V 16 Ciss 12 600 Coss 400 Crss 200 0 A 1 10 100 8 4 0 A 0 5 10 15 20 25 30 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 PDM 0.02 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7201 SO-8 Package Details DIM D -B- 5 8 E -A- 1 7 2 6 3 e 6X 5 H 0.25 (.010) 4 M A M θ e1 K x 45° θ A -C- 0.10 (.004) B 8X 0.25 (.010) A1 L 8X 6 C 8X M C A S B S INCHES MILLIMETERS MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 5 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC H .2284 .2440 K .011 .019 0.28 5.80 0.48 6.20 L 0.16 .050 0.41 1.27 θ 0° 8° 0° 8° RECOMMENDED FOOTPRINT NOTES: 1. 2. 3. 4. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. CONTROLLING DIMENSION : INCH. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 0.72 (.028 ) 8X 6.46 ( .255 ) 1.78 (.070) 8X 1.27 ( .050 ) 3X SO-8 Part Marking 6 www.irf.com IRF7201 SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/03 www.irf.com 7