PD - 9.1243B
IRF7309
PRELIMINARY
HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
D1
2
7
D1
3
6
D2
4
5
D2
N-Ch
P-Ch
30V
-30V
VDSS
RDS(on) 0.050Ω 0.10Ω
P-CHANNEL MOSFET
Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design for
which HEXFET Power MOSFETs are well known, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Max.
10 Sec. Pulse Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
N-Channel
P-Channel
4.7
4.0
3.2
16
-3.5
-3.0
-2.4
-12
A
A
A
A
W
W/°C
V
V/ns
°C
1.4
0.011
± 20
6.9
-6.0
-55 to + 150
Thermal Resistance
Parameter
RθJA
Junction-to-Amb. (PCB Mount, steady state)**
Min.
Typ.
Max.
Units
––––
––––
90
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
147
IRF7309
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
RDS(ON)
Static Drain-to-Source On-Resistance
P-Ch
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
LS
Internal Drain Inductace
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max.
30
—
—
-30 —
—
— 0.032 —
— -0.037 —
—
— 0.050
—
— 0.080
—
— 0.10
—
— 0.16
1.0 —
—
-1.0 —
—
5.2 —
—
2.5 —
—
—
— 1.0
—
— -1.0
—
—
25
—
— -25
––
— ±100
—
—
25
—
—
25
—
— 2.9
—
— 2.9
—
— 7.9
—
— 9.0
— 6.8 —
—
11
—
—
21
—
—
17
—
—
22
—
—
25
—
— 7.7 —
—
18
—
— 4.0 —
— 6.0 —
— 520 —
— 440 —
— 180 —
— 200 —
—
72
—
—
93
—
Units
Conditions
VGS = 0V, ID = 250µA
V
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
V/°C
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 2.4A
VGS = 4.5V, ID = 2.0A
Ω
VGS = -10V, ID = -1.8A
VGS = -4.5V, ID = -1.5A
VDS = VGS, ID = 250µA
V
VDS = VGS, ID = -250µA
VDS = 15V, ID = 2.4A
S
VDS = -24V, ID = -1.8A
VDS = 24V, VGS = 0V
VDS = -24V, VGS = 0V
µA V = 24V, V = 0V, T = 125°C
DS
GS
J
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = ± 20V
N-Channel
ID = 2.6A, VDS = 16V, VGS = 4.5V
nC
P-Channel
ID = -2.2A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 2.6A, RG = 6.0Ω,
RD = 3.8Ω
ns
P-Channel
VDD = -10V, ID = -2.2A, RG = 6.0Ω,
RD = 4.5Ω
nH
Between lead tip
and center of die contact
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
pF
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
Min. Typ. Max. Units
Conditions
—
— 1.8
—
— -1.8 A
—
—
16
—
— -12
—
— 1.0
TJ = 25°C, IS = 1.8A, VGS = 0V
V
—
— -1.0
TJ = 25°C, IS = -1.8A, VGS = 0V
—
47
71
N-Channel
ns
—
53
80
TJ = 25°C, IF = 2.6A, di/dt = 100A/µs
P-Channel
—
56
84 nC
TJ = 25°C, IF = -2.2A, di/dt = 100A/µs
—
66
99
Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 )
N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
148
IRF7309
N-Channel
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
100
4.5V
10
20µs PULSE WIDTH
TJ = 25°C
1
0.1
1
10
100
4.5V
10
A
20µs PULSE WIDTH
TJ = 150°C
1
0.1
100
1
Fig 2. Typical Output Characteristics,
TJ = 150oC
Fig 1. Typical Output Characteristics,
TJ = 25oC
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 25°C
TJ = 150°C
VDS = 15V
20µs PULSE WIDTH
4
5
6
7
8
9
A
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10
10
10
A
2.0
I D = 4.0A
1.5
1.0
0.5
0.0
-60
VGS = 10V
-40
-20
0
20
40
60
80
TJ , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
149
A
100 120 140 160
IRF7309
N-Channel
1000
VGS , Gate-to-Source Voltage (V)
800
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = C gs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
600
Coss
400
Crss
200
0
A
1
10
I D = 2.4A
VDS = 24V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 11
0
100
A
0
5
VDS , Drain-to-Source Voltage (V)
15
20
25
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-toSource Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
10
10
TJ = 150°C
TJ = 25°C
1
100µs
10
1ms
10ms
1
100ms
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
TA = 25°C
TJ = 150°C
Single Pulse
A
0.1
0.1
2.5
A
1
10
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
150
100
IRF7309
N-Channel
ID, Drain Current (Amps)
4.0
3.0
2.0
Fig 10a. Switching Time Test Circuit
1.0
A
0.0
25
50
75
100
125
150
TA , Ambient Temperature (°C)
Fig 9. Max. Drain Current Vs. Ambient Temp.
Fig 10b. Switching Time Waveforms
Fig 11b. Basic Gate Charge Waveform
Fig 11a. Gate Charge Test Circuit
P-Channel
100
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
1
0.1
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
-I D , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
TOP
-4.5V
20µs PULSE WIDTH
TJ = 25°C
1
10
A
10
-4.5V
1
0.1
100
-VDS , Drain-to-Source Voltage (V)
20µs PULSE WIDTH
TJ = 150°C
1
10
A
100
-V DS , Drain-to-Source Voltage (V)
Fig 12. Typical Output Characteristics, TJ = 25oC
Fig 13. Typical Output Characteristics,TJ = 150oC
151
IRF7309
P-Channel
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
100
TJ = 25°C
TJ = 150°C
10
VDS = -15V
20µs PULSE WIDTH
1
4
5
6
7
8
9
10
2.0
1.5
1.0
0.5
0.0
-60
A
-VGS , Gate-to-Source Voltage (V)
20
C, Capacitance (pF)
-VGS , Gate-to-Source Voltage (V)
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = Cds + C gd
Ciss
Coss
400
Crss
200
-40
-20
0
20
40
60
80
ID = -3.0A
VDS = -24V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 22
0
A
1
10
100
-VDS , Drain-to-Source Voltage (V)
A
0
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
Fig 16. Typical Capacitance Vs. Drain-toSource Voltage
Fig 17. Typical Gate Charge Vs. Gate-toSource Voltage
152
A
100 120 140 160
Fig 15. Normalized On-Resistance
Vs. Temperature
1000
600
VGS = -10V
TJ , Junction Temperature (°C)
Fig 14. Typical Transfer Characteristics
800
I D = -3.0A
IRF7309
P-Channel
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
-I D , Drain Current (A)
-ISD , Reverse Drain Current (A)
100
10
TJ = 150°C
TJ = 25°C
1
100µs
10
1ms
10ms
1
100ms
VGS = 0V
0.1
0.0
0.3
0.6
0.9
1.2
A
0.1
TA = 25°C
TJ = 150°C
Single Pulse
A
0.1
1.5
1
10
-VDS , Drain-to-Source Voltage (V)
-VSD , Source-to-Drain Voltage (V)
Fig 18. Typical Source-Drain Diode Forward
Voltage
Fig 19. Maximum Safe Operating Area
-ID, Drain Current (Amps)
3.0
2.0
Fig 21a. Switching Time Test Circuit
1.0
A
0.0
25
50
75
100
125
150
TA , AmbientTemperature (°C)
Fig 20. Max.Drain Current Vs. Ambient Temp.
153
Fig 21b. Switching Time Waveforms
100
IRF7309
P-Channel
Fig 22b. Gate Charge Test Circuit
Fig 22b. Basic Gate Charge Waveform
N- and P-Channel
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t
0.1
0.00001
Notes:
1. Duty factor D = t / t
2. Peak T =JP
0.0001
0.001
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.1
1
xZ
DM
10
1
2
+thJA
T
A
100
t 1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Refer to the Appendix Section for the following:
Appendix A:
Appendix B:
Appendix C:
Appendix D:
Figure 24, Peak Diode Recovery dv/dt Test Circuit — See page 329.
Package Outline Mechanical Drawing — See page 332.
Part Marking Information — See page 332.
Tape and Reel Information — See page 336.
154
A
1000