IRF IRF7477

PD- 94094A
IRF7477
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency Synchronous Buck
Converters for Computers and
Communications
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
l Low Charge Ratio to Eliminate False Turn
On in High Frequency Circuits
VDSS
Ω)
RDS(on) max (mΩ)
ID
8.5@VGS = 10V
10@VGS = 4.5V
14A
11A
30V
A
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
SO-8
T o p V ie w
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation„
Maximum Power Dissipation„
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
30
± 20
14
11
110
2.5
1.6
0.02
-55 to + 150
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes  through „ are on page 8
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1
6/26/01
IRF7477
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.029
6.5
7.7
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V GS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
8.5
VGS = 10V, ID = 14A ƒ
mΩ
10
VGS = 4.5V, ID = 11A ƒ
2.5
V
VDS = VGS, ID = 250µA
20
VDS = 24V, VGS = 0V
µA
100
VDS = 24V, VGS = 0V, TJ = 125°C
200
VGS = 16V
nA
-200
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
25
6.5
8.2
30
12
9.8
19
5.9
2710
1120
100
Max. Units
Conditions
–––
S
VDS = 15V, ID = 11A
38
ID = 11A
–––
nC
VDS = 15V
–––
VGS = 4.5V
–––
VGS = 0V, VDS = 15V
–––
VDD = 15V
–––
ID = 11A
ns
–––
RG = 1.8Ω
–––
VGS = 4.5V ƒ
–––
VGS = 0V
–––
VDS = 15V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
Max.
Units
–––
–––
500
8.2
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Qrr
trr
Qrr
Reverse
Reverse
Reverse
Reverse
2
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
2.3
–––
–––
110
A
––– 0.80
––– 0.65
––– 91
––– 130
––– 90
––– 140
1.3
–––
140
200
140
210
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 11A, VGS = 0V ƒ
TJ = 125°C, I S = 11A, VGS = 0V ƒ
TJ = 25°C, I F = 11A, VR=15V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 11A, VR=15V
di/dt = 100A/µs ƒ
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IRF7477
1000
1000
VGS
10V
7.0V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
VGS
10V
7.0V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
100
2.7V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
2.7V
10
1
0.1
100
Fig 1. Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
100
TJ = 150 ° C
V DS = 50V
20µs PULSE WIDTH
3.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
3.0
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10
2.5
20µs PULSE WIDTH
TJ = 150 °C
4.0
ID = 14A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7477
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
1000
Crss
100
10
ID = 11A
10
8
6
4
2
10
0
100
10
1000
ID, Drain-to-Source Current (A)
1000
100
10
TJ = 25 ° C
1
V GS = 0 V
0.6
40
50
60
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
TJ = 150 ° C
0.4
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0.1
0.2
20
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
0.8
1.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS = 24V
VDS = 15V
0
1
ISD , Reverse Drain Current (A)
C, Capacitance(pF)
10000
VGS , Gate-to-Source Voltage (V)
12
100000
1.2
100µsec
10
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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Fig 6. On-Resistance Vs. Drain Current
IRF7477
15
VDS
VGS
I D , Drain Current (A)
12
RD
D.U.T.
RG
+
-VDD
9
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
VDS
90%
0
25
50
75
100
TC , Case Temperature
125
150
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P DM
t1
0.1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7477
R DS(on) , Drain-to -Source On Resistance ( Ω )
R DS (on) , Drain-to-Source On Resistance ( Ω)
0.009
0.008
VGS = 4.5V
0.007
VGS = 10V
0.006
0.005
0
20
40
60
80
100
0.012
0.010
ID = 14A
0.008
0.006
3.0
120
3.4
3.8
4.2
4.6
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
1200
VG
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VGS
3mA
1000
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15 V
V (B R )D S S
tp
L
VD S
D .U .T
RG
IA S
20V
IAS
tp
DRIVE R
+
V
- DD
0.01 Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
TOP
A
BOTTOM
ID
3.7A
6.6A
8.2A
800
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7477
SO-8 Package Details
D IM
D
-B -
5
8
E
-A -
1
7
2
5
A
6
3
e
6X
5
H
0 .2 5 (.0 1 0 )
4
M
A M
θ
e1
K x 4 5°
-C -
0 .1 0 (.0 0 4 )
B 8X
0 .2 5 (.0 1 0 )
A1
L
8X
6
C
8X
M C A S B S
NOTES:
1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 .
2 . C O N T R O L L IN G D IM E N S IO N : IN C H .
3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A .
5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ).
6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E ..
M IN
M AX
.05 32
.06 88
1.3 5
1.75
.00 40
.00 98
0.1 0
0.25
B
.01 4
.01 8
0.3 6
0.46
C
.00 75
.009 8
0.19
0.25
D
.18 9
.196
4.80
4.98
E
.15 0
.15 7
3.8 1
3.99
e1
A
M ILLIM E T E R S
M AX
A1
e
θ
IN C H E S
M IN
.05 0 B A S IC
1.27 B A S IC
.02 5 B A S IC
0 .635 B A S IC
H
.22 84
.244 0
K
.01 1
.01 9
0.2 8
5.8 0
0.48
6.20
L
0.16
.05 0
0.4 1
1.27
θ
0°
8°
0°
8°
R E C O M M E N D E D F O O T P R IN T
0 .7 2 (.0 2 8 )
8X
6 .4 6 ( .2 5 5 )
1 .7 8 (.0 7 0 )
8X
1 .2 7 ( .0 5 0 )
3X
SO-8 Part Marking
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7
IRF7477
SO-8 Tape and Reel
TER M IN AL N UM B ER 1
1 2.3 ( .484 )
1 1.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
F EE D D IRE C TIO N
N OT E S :
1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R .
2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ).
3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.00
(12.992)
M AX .
14.4 0 ( .566 )
12.4 0 ( .488 )
N O T ES :
1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER .
2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 15mH
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board
RG = 25Ω, IAS = 8.2A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 6/01
8
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