NLAST4501 Single SPST Analog Switch The NLAST4501 is an analog switch manufactured in sub−micron silicon−gate CMOS technology. It achieves very low RON while maintaining extremely low power dissipation. The device is a bilateral switch suitable for switching either analog or digital signals, which may vary from zero to full supply voltage. The NLAST4501 is a low voltage, TTL (low threshold) compatible device, pin for pin compatible with the MAX4501. The Enable pin is compatible with standard TTL level outputs when supply voltage is nominal 5.0 Volts. It is also over−voltage tolerant, making it a very useful logic level translator. • • • • • http://onsemi.com MARKING DIAGRAMS 5 Guaranteed RON of 32 at 5.5 V A3d 1 Low Power Dissipation: ICC = 2 A SC70−5/SC−88A/SOT−353 DF SUFFIX CASE 419A Low Threshold Enable pin TTL compatible at 5.0 Volts TTL version and pin for pin with NLAS4501 Provides Voltage translation for many different voltage levels 3.3 to 5.0 Volts, Enable pin may go as high as 5.5 Volts 1.8 to 3.3 Volts 1.8 to 2.5 Volts Improved version of MAX4501 (at any voltage between 2 and 5.5 Volts) • • Chip Complexity: FETs = 11 Pin 1 5 A3d 1 SOT23−5/TSOP−5/SC59−5 DT SUFFIX CASE 483 Pin 1 d = Date Code PIN ASSIGNMENT COM NO GND 1 5 VCC 2 3 4 ENABLE Pin Function 1 COM 2 NO 3 GND 4 ENABLE 5 VCC FUNCTION TABLE Figure 1. Pinout (Top View) On/Off Enable Input State of Analog Switch L H Off On ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2003 November, 2003 − Rev. 2 1 Publication Order Number: NLAST4501/D NLAST4501 MAXIMUM RATINGS Symbol Parameter Value Unit VCC Positive DC Supply Voltage 0.5 to 7.0 V VIN Digital Input Voltage (Enable) 0.5 to 7.0 V VIS Analog Output Voltage (VNO or VCOM) 0.5 to VCC 0.5 V IIK DC Current, Into or Out of Any Pin TSTG Storage Temperature Range TL Lead Temperature, 1 mm from Case for 10 Seconds TJ Junction Temperature under Bias JA Thermal Resistance PD Power Dissipation in Still Air at 85C MSL Moisture Sensitivity FR Flammability Rating VESD ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) > 2000 > 100 N/A V ILatch−Up Latch−Up Performance Above VCC and Below GND at 85C (Note 5) 300 mA 20 mA 65 to 150 C 260 C 150 C SC70−5/SC−88A (Note 1) TSOP−5 350 230 C/W SC70−5/SC−88A TSOP−5 150 200 mW Level 1 Oxygen Index: 30% − 35% UL−94−VO (0.125 in) Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute−maximum−rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit 2.0 5.5 V VCC Positive DC Supply Voltage VIN Digital Input Voltage (Enable) GND 5.5 V VIO Static or Dynamic Voltage Across an Off Switch GND VCC V VIS Analog Input Voltage (NO, COM) GND VCC V TA Operating Temperature Range, All Package Types 55 125 C tr, tf Input Rise or Fall Time, (Enable Input) 0 0 100 20 ns/V Vcc = 3.3 V 0.3 V Vcc = 5.0 V 0.5 V 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80C 117.8 TJ = 90C 1,032,200 TJ = 100C 80 TJ = 110C Time, Years TJ = 120C Time, Hours FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 130C Junction Temperature °C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES 1 1 10 100 1000 TIME, YEARS Figure 2. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 NLAST4501 DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) Guaranteed Max Limit Symbol VIH VIL Parameter VCC 55C to 25C 85C 125C Unit 3.0 1.4 1.4 1.4 V 4.5 2.0 2.0 2.0 5.5 2.0 2.0 2.0 3.0 0.53 0.53 0.53 4.5 0.8 0.8 0.8 5.5 0.8 0.8 0.8 0 V to 5.5 V 0.1 1.0 1.0 A 5.5 1.0 1.0 2.0 A VCC 55C to 25C 85C 125C Unit VIN = VIH VIS = VCC to GND IIsI = 10.0 mA 3.0 45 50 55 4.5 30 35 40 5.5 25 30 35 Condition Minimum High−Level Input Voltage, Enable Inputs Maximum Low−Level Input Voltage, Enable Inputs IIN Maximum Input Leakage Current, Enable Inputs VIN = 5.5 V or GND ICC Maximum Quiescent Supply Current (per package) Enable and VIS = VCC or GND V DC ELECTRICAL CHARACTERISTICS − Analog Section Guaranteed Max Limit Symbol RON Parameter Condition Maximum ON Resistance (Figures 8 − 12) RFLAT(ON) ON Resistance Flatness VIN = VIH IIsI = 10.0 mA VIS = 1 V, 2 V, 3.5 V 4.5 4 4 5 INO(OFF) Off Leakage Current, Pin 2 (Figure 3) VIN = VIL VNO = 1.0 V, VCOM = 4.5 V or VCOM = 1.0 V and VNO 4.5 V 5.5 1 10 100 nA ICOM(OFF) Off Leakage Current, Pin 1 (Figure 3) VIN = VIL VNO = 4.5 V or 1.0 V VCOM = 1.0 V or 4.5 V 5.5 1 10 100 nA AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Max Limit 55C to 25C VCC Symbol tON tOFF Parameter Turn−On Time Turn−Off Time Test Conditions (V) RL = 300 CL = 35 pF (Figures 4, 5, and 13) RL = 300 CL = 35 pF (Figures 4, 5, and 13) Min Typ Max 2.0 7.0 14 3.0 5.0 10 4.5 4.5 5.5 4.5 2.0 3.0 85C Min Typ 125C Max Min Typ Max Unit 16 16 ns 12 12 9 11 11 9 11 11 11.0 22 24 24 7.0 14 16 16 4.5 5.0 10 12 12 5.5 5.0 10 12 12 ns Typical @ 25, VCC = 5.0 V CIN CNO or CNC CCOM(OFF) CCOM(ON) Maximum Input Capacitance, Select Input Analog I/O (switch off) Common I/O (switch off) Feedthrough (switch on) 8 10 10 20 http://onsemi.com 3 pF NLAST4501 ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) BW VONL VISO Q THD Limit V 25°C Unit VIS = 0 dBm VIS centered between VCC and GND (Figures 6 and 14) 3.0 190 MHz 4.5 200 5.5 220 VIS = 0 dBm @ 10 kHz VIS centered between VCC and GND (Figure 6) 3.0 2 4.5 2 5.5 2 f = 100 kHz; VIS = 1 V RMS VIS centered between VCC and GND (Figures 6 and 15) 3.0 93 dB Charge Injection Enable Input to Common I/O VIS = VCC to GND, FIS = 20 kHz tr = tf = 3 ns RIS = 0 , CL = 1000 pF Q = CL * VOUT (Figures 7 and 16) 3.0 1.5 pC 5.5 3.0 Total Harmonic Distortion THD Noise FIS = 20 Hz to 1 MHz, RL = Rgen = 600 , CL = 50 pF VIS = 3.0 VPP sine wave VIS = 5.0 VPP sine wave (Figure 17) 3.3 0.3 5.5 0.15 Parameter Condition Maximum On−Channel −3dB Bandwidth or Minimum Frequency Response Maximum Feedthrough On Loss Off−Channel Isolation 1.00E+05 1.00E+04 1.00E+03 1.00E+02 LEAKAGE (pA) Symbol VCC 1.00E+01 ICOM(ON) 1.00E+00 1.00E−01 1.00E−02 1.00E−03 ICOM(OFF) 1.00E−04 1.00E−05 INO(OFF) 1.00E−06 1.00E−07 −55 −35 −15 5 25 45 65 85 105 125 145 TEMPERATURE (C) Figure 3. Switch Leakage vs. Temperature http://onsemi.com 4 dB 4.5 5.5 % NLAST4501 VCC DUT VCC Input NO 50% 50% 0V COM VOUT 0.1 F 300 VOH 35 pF 90% 90% Output VOL Input tON tOFF Figure 4. tON/tOFF VCC VCC Input DUT 300 NO 50% 50% 0V COM VOUT VOH 35 pF Output Input tOFF Figure 5. tON/tOFF http://onsemi.com 5 10% 10% VOL tON NLAST4501 DUT Reference Transmitted COM NO 50 Generator 50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. VVOUT for VIN at 100 kHz IN VOUT for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Log VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3 dB below VONL Figure 6. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT NO VCC VIN COM GND CL Output Off VIN Figure 7. Charge Injection: (Q) http://onsemi.com 6 On Off ∆VOUT NLAST4501 80 80 70 70 60 VCC = 2.0 50 50 RON (Ω) RON (Ω) 60 40 VCC = 2.5 30 −55°C 30 25°C VCC = 3.0 20 40 20 85°C VCC = 4.5 10 10 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 125°C 0 5 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VCOM (VOLTS) VIS (VOLTS) Figure 8. RON vs. VCOM and VCC (@25C) Figure 9. RON vs. VCOM and Temperature, VCC = 2.0 V 45 2 30 40 20 25 RON (Ω) RON (Ω) 30 −55°C 20 25°C 15 10 15 125°C 25°C 85°C 10 85°C 5 125°C 5 0 −55°C 25 35 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2.2 2.4 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 VCOM (VOLTS) VCOM (VOLTS) Figure 10. RON vs. VCOM and Temperature, VCC = 2.5 V Figure 11. RON vs. VCOM and Temperature, VCC = 3.0 V 3 35.0 18 30.0 16 −55°C 25°C 25.0 12 TIME (nS) RON (Ω) 14 85°C 10 8 15.0 4 5.0 2 0.0 2.0 0 tON 10.0 125°C 6 20.0 tOFF 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 3.0 4.5 5.0 5.5 VCC (V) VCOM (VOLTS) Figure 12. RON vs. VCOM and Temperature, VCC = 4.5 V Figure 13. Switching Time vs. Supply Voltage, T = 25C http://onsemi.com 7 NLAST4501 0 0 0 BANDWIDTH (dB/Div) Phase (Degrees) 5 VCC = 5.0 V TA = 25°C 10 100 1 10 OFF ISOLATION (dB/Div) 10 PHASE (Degrees) Bandwidth (On − Loss) −50 VCC = 5.0 V TA = 25°C −100 10 100 300 100 1 10 100 300 FREQUENCY (MHz) FREQUENCY (MHz) Figure 14. ON Channel Bandwidth and Phase Shift Over Frequency Figure 15. Off Channel Isolation 100 1.60 1.40 10 VCC = 5.0 V 1.20 0.80 THD (%) Q (pC) 1.00 VCC = 3.0 V 1 3.3 V 0.60 0.1 0.40 5.5 V 0.20 0.00 0.0 0.01 1.0 2.0 3.6 3.0 VCOM (V) 4.0 4.5 10 5.0 100 1000 10000 100000 1000000 FREQUENCY (Hz) Figure 16. Charge Injection vs. VCOM Figure 17. THD vs. Frequency DEVICE ORDERING INFORMATION Device Nomenclature Technology Device Function Package Suffix Tape & Reel Suffix Package Type (Name/SOT#/ Common Name) Tape & Reel Size NL AST 4501 DF T2 SC70−5/SC−88A/ SOT−353 178 mm (7 in) 3000 Unit NL AST 4501 DT T1 SOT23−5/TSOP−5/ SC59−5 178 mm (7 in) 3000 Unit Circuit Indicator NLAST4501DFT2 NLAST4501DTT1 Device Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 8 NLAST4501 PACKAGE DIMENSIONS SC−88A/SOT−353 DF SUFFIX CASE 419A−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 0.2 (0.008) D 5 PL M B M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J C K H TSOP−5 DT SUFFIX CASE 483−02 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. A AND B DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D S 5 4 1 2 3 B L G A J C 0.05 (0.002) H M K http://onsemi.com 9 MILLIMETERS INCHES DIM MIN MAX MIN MAX A 2.90 3.10 0.1142 0.1220 B 1.30 1.70 0.0512 0.0669 C 0.90 1.10 0.0354 0.0433 D 0.25 0.50 0.0098 0.0197 G 0.85 1.05 0.0335 0.0413 H 0.013 0.100 0.0005 0.0040 J 0.10 0.26 0.0040 0.0102 K 0.20 0.60 0.0079 0.0236 L 1.25 1.55 0.0493 0.0610 M 0_ 10 _ 0_ 10 _ S 2.50 3.00 0.0985 0.1181 NLAST4501 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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