NLAS1053 2:1 Mux/Demux Analog Switches The NLAS1053 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very high speed propagation delays and low ON resistances while maintaining CMOS low power dissipation. The device consists of a single 2:1 Mux/Demux (SPDT), similar to ON Semiconductor’s NLAS4053 analog and digital voltages that may vary across the full power supply range (from VCC to GND). The inhibit and select input pins have over voltage protection that allows voltages above VCC up to 7.0 V to be present without damage or disruption of operation of the part, regardless of the operating voltage. http://onsemi.com 1 MARKING DIAGRAMS Features • • • • • • • • • • • US8 US SUFFIX CASE 493−01 High Speed: tPD = 1 ns (Typ) at VCC = 5.0 V Low Power Dissipation: ICC = 2 A (Max) at TA = 25°C High Bandwidth, Improved Linearity, and Low RDSON INH Pin Allows a Both Channels ‘OFF’ Condition (With a High) RDSON ≅ 25 , Performance Very Similar to the NLAS4053 Break Before Make Circuitry, Prevents Inadvertent Shorts Useful For Switching Video Frequencies Beyond 50 MHz Latchup Performance Exceeds 300 mA ESD Performance: HBM > 2000 V; MM > 200 V, CDM > 1500 V Tiny US8 Package, Only 2.1 X 3.0 mm Pb−Free Package is Available 8 AC M G G 1 AC = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION COM 1 8 VCC INH 2 7 CH0 N/C 3 6 CH1 GND 4 5 Select May, 2006 − Rev. 2 Package Shipping† NLAS1053US US8 3000 / Tape & Reel NLAS1053USG US8 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. FUNCTION TABLE Figure 1. Pin Assignment © Semiconductor Components Industries, LLC, 2006 Device 1 INH Select Ch 0 Ch 1 H L L X L H OFF ON OFF OFF OFF ON Publication Order Number: NLAS1053/D NLAS1053 MAXIMUM RATINGS Parameter Symbol Value Unit Positive DC Supply Voltage VCC −0.5 to +7.0 V Digital Input Voltage (Select and Inhibit) VIN −0.5 ≤ V is ≤ +7.0 V Analog Output Voltage (VCH or VCOM) VIS −0.5 ≤ V is ≤ VCC +0.5 V DC Current, Into or Out of Any Pin IIK 50 mA TSTG −65 to +150 _C Lead Temperature, 1 mm from Case for 10 Seconds TL 260 _C Junction Temperature under Bias TJ +150 _C Thermal Resistance JA 250 _C/W Power Dissipation in Still Air at 85_C PD 250 mW Storage Temperature Range Moisture Sensitivity Flammability Rating MSL Level 1 FR UL 94 V−0 @ 0.125 in VESD > 2000 200 N/A V ILatchup ±300 mA Oxygen Index: 30% − 35% ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) Latchup Performance Above VCC and Below GND at 85_C (Note 5) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Characteristics Symbol Min Max Unit Positive DC Supply Voltage VCC 2.0 5.5 V Digital Input Voltage (Select and Inhibit) VIN GND 5.5 V Static or Dynamic Voltage Across an Off Switch VIO GND VCC V Analog Input Voltage (CH, COM) VIS GND VCC V Operating Temperature Range, All Package Types TA −55 +125 °C tr, tf 0 0 100 20 ns/V Vcc = 3.3 V ± 0.3 V Vcc = 5.0 V ± 0.5 V 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80°C 1,032,200 TJ = 90°C 80 TJ = 100°C Time, Years TJ = 110°C Time, Hours FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 120°C Junction Temperature 5C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES TJ = 130°C Input Rise or Fall Time (Enable Input) 1 1 10 100 TIME, YEARS Figure 2. Failure Rate versus Time Junction Temperature http://onsemi.com 2 1000 NLAS1053 DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) Guaranteed Limit Symbol VCC *55_C to 25_C t85_C t125_C Unit Minimum High−Level Input Voltage, Select and Inhibit Inputs VIH 2.0 2.5 3.0 4.5 5.5 1.5 1.9 2.1 3.15 3.85 1.5 1.9 2.1 3.15 3.85 1.5 1.9 2.1 3.15 3.85 V Maximum Low−Level Input Voltage, Select and Inhibit Inputs VIL 2.0 2.5 3.0 4.5 5.5 0.5 0.6 0.9 1.35 1.65 0.5 0.6 0.9 1.35 1.65 0.5 0.6 0.9 1.35 1.65 V Parameter Condition Maximum Input Leakage Current, Select and Inhibit Inputs VIN = 5.5 V or GND IIN 0 V to 5.5 V $0.1 $1.0 $1.0 A Maximum Quiescent Supply Current Select and Inhibit = VCC or GND ICC 5.5 1.0 1.0 2.0 A Symbol VCC 55 to 255C 855C 1255C Unit DC ELECTRICAL CHARACTERISTICS − Analog Section Guaranteed Limit Parameter Condition Maximum “ON” Resistance (Figures 17 − 23) VIN = VIL or VIH VIS = GND to VCC IINI ≤ 10.0 mA RON 2.5 3.0 4.5 5.5 70 40 20 16 85 46 28 22 105 52 34 28 ON Resistance Flatness (Figures 17 − 23) VIN = VIL or VIH IINI ≤ 10.0 mA VIS = 1V, 2V, 3.5V RFLAT 4.5 4 4 5 ON Resistance Match Between Channels VIN = VIL or VIH IINI ≤ 10.0 mA VCH1 or VCH0 = 3.5 V RON 4.5 2 2 3 CH1 or CH0 Off Leakage Current (Figure 9) VIN = VIL or VIH VCH1 or VCH0 = 1.0 VCOM 4.5 V ICH0 ICH1 5.5 1 10 100 nA COM ON Leakage Current (Figure 9) VIN = VIL or VIH VCH1 1.0 V or 4.5 V with VCH0 floating or VCH1 1.0 V or 4.5 V with VCH1 floating VCOM = 1.0 V or 4.5 V ICOM(ON) 5.5 1 10 100 nA (ON) (ON) http://onsemi.com 3 NLAS1053 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Max Limit 55 to 25_C VCC 85_C 125_C Test Conditions Symbol (V) Min Typ* Max Min Max Min Max Unit Turn−On Time (Figures 12 and 13) INH to Output RL = 300 CL = 35 pF (Figures 4 and 5) tON 2.5 3.0 4.5 5.5 2 2 1 1 7 5 4 3 12 10 9 8 2 2 1 1 15 15 12 12 2 2 1 1 15 15 12 12 ns Turn−Off Time (Figures 12 and 13) INH to Output RL = 300 CL = 35 pF (Figures 4 and 5) tOFF 2.5 3.0 4.5 5.5 2 2 1 1 7 5 4 3 12 10 9 8 2 2 1 1 15 15 12 12 2 2 1 1 15 15 12 12 ns Transition Time (Channel Selection Time) (Figure ) Select to Output RL = 300 CL = 35 pF (Figures and ) ttrans 2.5 3.0 4.5 5.5 5 5 2 2 18 13 12 9 28 21 16 14 5 5 2 2 30 25 20 20 5 5 2 2 30 25 20 20 ns Minimum Break−Before−Make Time VIS = 3.0 V (Figure 3) RL = 300 CL = 35 pF tBBM 2.5 3.0 4.5 5.5 1 1 1 1 12 11 6 5 Parameter 1 1 1 1 1 1 1 1 ns Typical @ 25, VCC = 5.0 V Maximum Input Capacitance, Select/INH Input Analog I/O (switch off) Common I/O (switch off) Feedthrough (switch on) CIN CNO or CNC CCOM C(ON) 8 10 10 20 pF *Typical Characteristics are at 25_C. ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Parameter Condition Maximum On−Channel −3dB Bandwidth or Minimum Frequency Response (Figure 10) VIN = 0 dBm VIN centered between VCC and GND (Figure 7) Maximum Feedthrough On Loss VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 7) Off−Channel Isolation (Figure 10) f = 100 kHz; VIS = 1 V RMS VIN centered between VCC and GND (Figure 7) Charge Injection Select Input to Common I/O (Figure 15) VIN = VCC to GND, FIS = 20 kHz tr = tf = 3 ns RIS = 0 , CL = 1000 pF Q = CL * VOUT (Figure 8) Total Harmonic Distortion THD + Noise (Figure 14) FIS = 20 Hz to 100 kHz, RL = Rgen = 600 CL = 50 pF VIS = 5.0 VPP sine wave http://onsemi.com 4 Symbol VCC V Typical 25°C Unit BW 3.0 4.5 5.5 170 200 200 MHz VONL 3.0 4.5 5.5 −3 −3 −3 dB VISO 3.0 4.5 5.5 −93 −93 −93 dB 3.0 5.5 1.5 3.0 pC 5.5 0.1 % Q THD NLAS1053 VCC DUT VCC Input Output GND VOUT 0.1 F 300 tBMM 35 pF 90% of VOH 90% Output Switch Select Pin GND Figure 3. tBBM (Time Break−Before−Make) VCC DUT VCC Input Output 50% VOUT 0.1 F Open 50% 0V 300 VOH 35 pF 90% 90% Output INH Input VOL tON tOFF Figure 4. tON/tOFF VCC VCC Input DUT Output 300 50% VOUT Open 50% 0V VOH 35 pF Output 10% VOL INH Input tOFF Figure 5. tON/tOFF http://onsemi.com 5 10% tON NLAS1053 VCC 0.1 F VCC Output Input VOUT GND 300 50% 50% 0V 35 pF VCC 90% Output Select Pin 10% GND ttrans ttrans Figure 6. ttrans (Channel Selection Time) 50 DUT Reference Transmitted Input Output 50 Generator 50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. ǒVVOUT Ǔ for VIN at 100 kHz IN VOUT Ǔ for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Log ǒ VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3 dB below VONL Figure 7. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT VCC VIN Output Open GND CL Output Off VIN Figure 8. Charge Injection: (Q) http://onsemi.com 6 On Off VOUT NLAS1053 0 10 −20 1 −40 Bandwidth (ON−RESPONSE) Off Isolation (dB) LEAKAGE (nA) 100 ICOM(ON) 0.1 −60 ICOM(OFF) 0.01 VCC = 5.0 V TA = 25_C −80 VCC = 5.0 V ICH(OFF) −100 0.01 0.001 −55 −20 25 70 85 125 0.1 TEMPERATURE (°C) 100 200 1 10 FREQUENCY (MHz) Figure 10. Bandwidth and Off−Channel Isolation Figure 9. Switch Leakage versus Temperature 30 0 10 20 TIME (ns) PHASE (Degree) 25 20 15 VCC = 5.0 V TA = 25_C 0.01 ttrans (ns) 10 30 0.1 tON/tOFF (ns) 5 1 10 FREQUENCY (MHz) 0 2.5 100 200 3 4.5 Figure 12. tON and tOFF versus VCC at 255C 30 1 VCC = 4.5 V VINpp = 3.0 V VCC = 3.6 V THD + NOISE (%) 25 20 TIME (ns) 4 VCC (VOLTS) Figure 11. Phase versus Frequency 15 10 ttrans 0.1 VINpp = 5.0 V VCC = 5.5 V tON/tOFF 5 0 −55 3.5 0.01 −40 25 85 125 1 10 100 Temperature (°C) FREQUENCY (kHz) Figure 13. tON and tOFF versus Temp Figure 14. Total Harmonic Distortion Plus Noise versus Frequency http://onsemi.com 7 5 NLAS1053 3.0 100 2.5 10 1 VCC = 5 V 1.5 0.1 ICC (nA) Q (pC) 2.0 1.0 0.5 0.01 VCC = 3.0 V 0.001 VCC = 3 V 0 0.0001 −0.5 0 1 2 3 4 VCC = 5.0 V 0.00001 −40 5 −20 0 20 60 80 100 120 VCOM (V) Temperature (°C) Figure 15. Charge Injection versus COM Voltage Figure 16. ICC versus Temp, VCC = 3 V & 5 V 100 100 90 VCC = 2.0 V 80 80 60 60 RON () RON () 70 VCC = 2.5 V 40 VCC = 3.0 V 20 50 85°C 40 125°C 30 25°C 20 VCC = 4.5 V −55°C 10 0 0 0 1 2 3 4 0 5 0.5 1 2 2.5 VCOM (VOLTS) VCOM (VOLTS) Figure 17. RON versus VCOM and VCC (@ 255C Figure 18. RON versus VCOM and Temperature, VCC 2.0 V 70 40 60 35 25°C 30 RON () 50 RON () 1.5 40 30 125°C 25°C 20 125°C 15 85°C 20 10 85°C 10 25 −55°C −55°C 5 0 0 0 0.5 1 1.5 2 2.5 3 0 VCOM (VOLTS) 0.5 1 1.5 2 2.5 3 3.5 VCOM (VOLTS) Figure 20. RON versus VCOM and Temperature, VCC = 3.0 V Figure 19. RON versus VCOM and Temperature, VCC = 2.5 V http://onsemi.com 8 NLAS1053 20 18 18 16 16 125°C 12 12 RON () 85°C 10 8 10 85°C 8 −55°C 6 6 25°C 4 25°C −55°C 4 2 2 0 0 0 1 2 3 VCOM (VOLTS) 4 5 0 1 2 3 VCOM (VOLTS) 20 15 125°C 10 85°C 25°C 5 −55°C 0 0 1 2 4 5 6 Figure 22. RON versus VCOM and Temperature, VCC = 5.0 V Figure 21. RON versus VCOM and Temperature, VCC = 4.5 V RON () RON () 125°C 14 14 3 VCOM (VOLTS) 4 5 Figure 23. RON versus VCOM and Temperature, VCC = 5.5 V http://onsemi.com 9 6 NLAS1053 PACKAGE DIMENSIONS US8 CASE 493−02 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION “A” DOES NOT INCLUDE MOLD FLASH, PROTRUSION OR GATE BURR. MOLD FLASH. PROTRUSION AND GATE BURR SHALL NOT EXCEED 0.140 MM (0.0055”) PER SIDE. 4. DIMENSION “B” DOES NOT INCLUDE INTER−LEAD FLASH OR PROTRUSION. INTER−LEAD FLASH AND PROTRUSION SHALL NOT E3XCEED 0.140 (0.0055”) PER SIDE. 5. LEAD FINISH IS SOLDER PLATING WITH THICKNESS OF 0.0076−0.0203 MM. (300−800 “). 6. ALL TOLERANCE UNLESS OTHERWISE SPECIFIED ±0.0508 (0.0002 “). −X− A 8 J −Y− 5 DETAIL E B L 1 4 R S G P U DIM A B C D F G H J K L M N P R S U V C −T− SEATING PLANE D H 0.10 (0.004) T K N 0.10 (0.004) M T X Y R 0.10 TYP V M F DETAIL E MILLIMETERS MIN MAX 1.90 2.10 2.20 2.40 0.60 0.90 0.17 0.25 0.20 0.35 0.50 BSC 0.40 REF 0.10 0.18 0.00 0.10 3.00 3.20 0_ 6_ 5_ 10 _ 0.23 0.34 0.23 0.33 0.37 0.47 0.60 0.80 0.12 BSC INCHES MIN MAX 0.075 0.083 0.087 0.094 0.024 0.035 0.007 0.010 0.008 0.014 0.020 BSC 0.016 REF 0.004 0.007 0.000 0.004 0.118 0.126 0_ 6_ 5_ 10 _ 0.010 0.013 0.009 0.013 0.015 0.019 0.024 0.031 0.005 BSC SOLDERING FOOTPRINT* 3.8 0.15 0.50 0.0197 1.8 0.07 0.30 0.012 1.0 0.0394 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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