Data Sheet No.PD 60152-K IPS041L FULLY PROTECTED POWER MOSFET SWITCH Product Summary Features • • • • • Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS041L is a fully protected three terminal SMART POWER MOSFET that features over-current, overtemperature, ESD protection and drain to source active clamp.This device combines a HEXFET® POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the Drain current reaches 2A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Rds(on) 500mΩ (max) V clamp 50V Ishutdown 2A Ton/Toff 1.5µs Package 3 Lead SOT223 Typical Connection Load R in series (if needed) D IN Q control S S Logic signal (Refer to leads assignments for correct pin configuration) www.irf.com 1 IPS041L Absolute Maximum Ratings Absolute maximum ratings indicates sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness. Symbol Parameter Min. Max. — 47 Maximum input voltage -0.3 7 V Maximum IN current Diode max. continuous current (1) -10 +10 mA — 1.2 A — 3 Maximum power dissipation (rth=125oC/W) — 1 ESD1 Electrostatic discharge voltage (Human Body) — 4 ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 Vds Maximum drain to source voltage Vin Iin, max Isd cont. (rth=125oC/W) Isd pulsed Diode max. pulsed current (1) (1) P d T stor. Tj max. Units Test Conditions W C=100pF, R=1500Ω, kV Max. storage temperature -55 150 o Max. junction temperature -40 150 o Min. Typ. — — 100 60 C=200pF, R=0Ω, L=10µH C C Thermal Characteristics Symbol Parameter Rth1 Rth2 Thermal resistance with standard footprint Thermal resistance with 1" square footprint Max. Units Test Conditions — — o C/W Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Vds (max) VIH VIL I ds — 4 0 35 6 0.5 — 1 — 0 0.75 5 1 1 Continuous drain to source voltage High level input voltage Low level input voltage Continuous drain current Tamb=85 o C ( TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC) Rin Recommended resistor in series with IN pin Tr-in(max) Max recommended rise time for IN signal (see fig. 2) Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) Units V A kΩ µS kHz (1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Appl. notes. 2 www.irf.com IPS041L Static Electrical Characteristics (Tj = 25oC unless otherwise specified.) Symbol Parameter Rds(on) Idss1 Min. Typ. ON state resistance Tj = 25oC Tj = 150oC Drain to source leakage current — — 0 370 590 0.5 Max. Units Test Conditions 500 900 25 Drain to source leakage current 0 5 50 Drain to Source clamp voltage 1 Drain to Source clamp voltage 2 IN to Source clamp voltage IN threshold voltage ON state IN positive current OFF state IN positive current 47 50 7 1 25 50 52 53 8.1 1.6 90 130 56 60 9.5 2 200 250 @Tj=25oC Idss2 mΩ Vin = 5V, Ids = 1A Vcc = 14V, Tj = 25oC µA Vcc = 40V, Tj = 25oC @Tj=25oC V clamp 1 V clamp 2 Vin clamp Vin th Iin, -on Iin, -off V µA Id = 20mA (see Fig.3 & 4) Id=Ishutdown (see Fig.3 & 4) Iin = 1 mA Id = 50mA, Vds = 14V Vin = 5V Vin = 5V over-current triggered Switching Electrical Characteristics Vcc = 14V, Resistive Load = 20Ω, Rinput = 1kΩ, 100µs pulse, Tj = 25oC, (unless otherwise specified). Symbol Parameter Min. Ton Tr Trf Toff Tf Qin 0.05 0.5 — 0.5 0.5 — 0.2 1.3 5 1.6 1.5 1 Min. Typ. — 1.1 1.5 2 — 165 1.7 2.3 10 400 Turn-on delay time Rise time Time to 130% final Rds(on) Turn-off delay time Fall time Total gate charge Typ. Max. Units Test Conditions 0.5 2.5 — 2.5 2.5 — See figure 2 µs See figure 2 nC Vin = 5V Protection Characteristics Symbol Parameter T sd I sd V reset Treset EOI_OT Over temperature threshold Over current threshold IN protection reset threshold Time to reset protection Short circuit energy (see application note) www.irf.com Max. Units Test Conditions — 2.2 3 40 — o C A V µs µJ See fig. 1 See fig. 1 V in = 0V, Tj = 25oC Vcc = 14V 3 IPS041L Functional Block Diagram All values are typical DRAIN 47 V 200 kΩ 4000Ω IN 8.1 V S Q R Q I sense 80 µA T > 165°c I > 1sd SOURCE Lead Assignments (2) D 1 In 4 2 D 3 S www.irf.com IPS041L Vin 5V 0V 90 % Vin 10 % Ids t < T reset Tr-in t > T reset I shutdown Isd 90 % Ids 10 % Td on Td off tf tr T T shutdown Tsd (165 °c) Vds Figure 1 - Timing diagram Figure 2 - IN rise time & switching time definitions T clamp Vin L Rem : V load is negative during demagnetization V load + R 14 V - Ids Vin Vds clamp ( Vcc ) Vds 5v 0v D IN Vds S Ids ( see Appl . Notes to evaluate power dissipation ) Figure 3 - Active clamp waveforms www.irf.com Figure 4 - Active clamp test circuit 5 IPS041L All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 200% 180% 160% 140% Tj = 150oC 120% 100% 80% Tj = 25oC 60% 40% 20% 0 1 2 3 4 5 6 7 8 8 25 50 75 100 125 150 175 4 ton delay rise tim e 130% rdson 9 0 Figure 6 - Normalised Rds ON (%) Vs Tj (oC) Figure 5 - Rds ON (mΩ) Vs Input Voltage (V) 10 0% -50 -25 toff delay fall tim e 3 7 6 5 2 4 3 1 2 1 0 0 0 1 2 3 4 5 6 7 8 Figure 7 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs Input Voltage (V) 6 0 1 2 3 4 5 6 7 8 Figure 8 - Turn-OFF Delay Time & Fall Time (us)Vs Input Voltage (V) www.irf.com IPS041L 100 100 delay off delay on rise tim e 130% rdson fall tim e 10 10 1 1 0 .1 0 .1 10 100 1000 10000 Figure 9 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds (on) (us) Vs IN Resistor (Ω) 3 10 100 1000 10000 Figure 10 - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor (Ω) 3 2.5 2 2 1.5 1 1 0.5 Isd 25°C Ilim 25°C 0 0 1 2 3 4 5 6 7 0 8 Figure 11 - Current Iim. & I shutdown (A) Vs Vin (V) www.irf.com -50 -25 0 25 50 75 100 125 150 Figure 12 - I shutdown (A) Vs Temperature (oC) 7 IPS041L 3 1" footprint 10 55°C/W T=25°C Std. footprint std. footprint 100°C/W T=100°C Std footprint Current path capability should be above this curve 2 1 1 0 -50 Load characteristic should be below this curve 0 50 100 150 200 0.1 Figure 14 - Ids (A) Vs Protection Resp.Time (s) Figure 13 - Max.Cont. Ids (A) Vs Amb. Temperature (oC) 10 single pulse 1000 Hz rth=100°C/W dT=25°C 10kHz rth=100°C/W dT=25°C 1 00 10 1 1 Vbat = 14 V Tjini = T sd Single pulse 0 .1 0.1 0 .0 1 0 .1 1 10 Figure 15 - Iclamp (A) Vs Inductive Load (mH) 8 100 Figure 16 - Transient Thermal Imped. (oC/W) Vs Time (s) www.irf.com IPS041L 200 120% 180 115% 160 110% 140 120 105% 100 100% 80 95% 60 90% 40 Iin,on 20 Iin,off 85% 0 80% -50 -25 0 -50 -25 25 50 75 100 125 150 Figure 17 - Input current (µA) Vs Tj (oC) 16 14 Treset rise tim e 12 fall tim e Vds clam p @ Isd Vin clam p @ 10m A 0 25 50 75 100 125 150 Figure 18 - Vin clamp and V clamp2 (%) Vs Tj (oC) 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 Figure 19 - Turn-on, Turn-off, and Treset (µs) Vs Tj (oC) www.irf.com 9 IPS041L Case Outline 3-Lead SOT-223 10 01-6029 01-0022 05 (TO-261AA) www.irf.com IPS041L Tape & Reel - SOT223 01-0028 05 / 01-0008 02 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 6/11/2001 www.irf.com 11