Santa Ana Division
MSAFA1N100P3
MOSFET Device
Features
•
•
•
•
•
•
•
Low On-State resistance
Avalanche and Surge Rated
High Frequency Switching
Ultra low Leakage Current
UIS rated
Available with Lot Acceptance Testing “L” Suffix
Available with “J” leads
Applications
1 Amp
1000 V
N-Channel
enhancement mode high
density
•
Implantable Cardio Defibrillator
Testing and Screening (per lot)
• 100% Testing at 25C, DC parameters
• Sample Test (22/0), AC, Hot and Cold Parameters (min/max limits)
Maximum Ratings
SYMBOL
VDSS
VGS
ID1
ID2
IDM1
IAR
EAR
EAS
TJ, TSTG
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Continuous Drain Current @ TC = 25
Continuous Drain Current @ TC = 100
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Operating and Storage: Junction Temperature Range
VALUE
1000
±20
1
0.8
4
1
TBD
TBD
-55 to 150
UNIT
Volts
Volts
Amps
Amps
Amps
Amps
mJ
mJ
C
Static Electrical Characteristics
SYMBOL
BVDSS
VGS(TH)2
VGS(TH)1
RDS(ON)1
RDS(ON)2
RDS(ON)3
RDS(ON)4
RDS(ON)5
IDSS1
IDSS2
IDSS3
IGSS1
IGSS2
IGSS3
CHARACTERISTIC / TEST CONDITIONS
MIN
Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25mA)
1000
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37C)
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 25C)
2
Drain – Source On-State Resistance (VGS = 10V, ID = ID1, TJ = 25C)
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 37C)
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 25C)
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 60C)
Drain – Source On-State Resistance (VGS = 7V, ID = ID1, TJ = 125C)
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 25C)
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 37C)
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 125C)
Gate-Source Leakage Current (VGS = ±20V, VCE =0V)
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 37C
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 125C
TYP
3.4
3.5
12.5
12.5
11.5
15
23.5
1
10
MAX UNIT
Volts
Volts
4.5 Volts
13.5 ohm
ohm
14
ohm
ohm
ohm
10
uA
uA
100
uA
±100 nA
nA
500
nA
2830 south Fairview Street, Santa Ana, CA 92704 USA (714)979.8220 FAX (714)557.5989
www.MICROSEMI.com
Data Sheet # MSC
Updated: December 1999
Santa Ana Division
MSAFA1N100P3
Fast MOSFET for
Implantable Cardio Defibrillator
Applicaions
Dynamic Electrical Characteristics
SYMBOL
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
td (on)
tr
td (off)
tf
VSD
trr
Qrr
CHARACTERISTIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
TEST CONDITIONS
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDS = 0.5BVDSS
IC = 20 mA
Resistive Switching (25C)
VGS = 10V, VDS = 0.5BVDSS
ID = 20 mA
Rg = 1.6 Ohms
Resistive Switching (25C)
VGS = 10V, VDS = 0.5BVDSS
ID = 100 mA
Rg = 1.6 Ohms
VGS =0 V, IS = 1 A
IS = 1 A, d IS / dt = 100 A/us
IS = 1 A, d IS / dt = 100 A/us
MIN
TYP
290
36
15
20
1
10
6.3
5.9
315
2.6
6.3
5.8
76
470
MAX
350
45
25
1
130
0.7
UNIT
pF
pF
pF
nC
nC
nC
ns
ns
ns
us
ns
ns
ns
ns
V
ns
uC
2830 south Fairview Street, Santa Ana, CA 92704 USA (714)979.8220 FAX (714)557.5989
www.MICROSEMI.com
Data Sheet # MSC
Updated: December 1999