JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z ESD protected up to 2KV 1. GATE 2. SOURCE 3. DRAIN Marking: 72K MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V ID Drain Current 340 mA PD Power Dissipation 0.35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RθJA Thermal Resistance fromJunction to Ambient 357 ℃ /W Equivalent circuit MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage* Zero Gate Voltage Drain Current Gate –Source leakage current Drain-Source On-Resistance* VDS VGS = 0V, ID =250µA 60 V VGS(th) VDS =VGS, ID =1mA 1 V IDSS VDS =48V,VGS = 0V IGSS1 1 µA VGS =±20V, VDS = 0V ±10 µA IGSS2 VGS =±10V, VDS = 0V ±200 nA IGSS3 VGS =±5V, VDS = 0V ±100 nA 5.3 Ω 5 Ω 1.5 V RDS(on) VGS = 4.5V, ID =200mA VGS =10V,ID =500mA Diode Forward Voltage VSD VGS=0V, IS=300mA Recovered charge Qr VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µS 30 nC Dynamic Characteristics** Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS =10V,VGS =0V,f =1MHz 40 pF 30 pF 10 pF 10 ns 15 ns Switching Characteristics** Turn-On Delay Time td(on) Turn-Off Delay Time td(off) Reverse recovery Time trr VGS=10V,VDD=50V,RG=50Ω, RGS=50Ω, RL=250Ω VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µS 30 ns GATE-SOURCE ZENER DIODE Gate-Source Breakdown Voltage BVGSO Igs=±1mA (Open Drain) Notes : *Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%. **These parameters have no way to verify. ±21.5 ±30 V A,Dec,2010 Typical Characteristics 2N7002K Transfer Characteristics Output Characteristics 1.0 1.0 VGS=10,7,6,5V Ta=25℃ Ta=25℃ Pulsed Pulsed 0.8 0.8 ID ID (A) (A) VGS=4V DRAIN CURRENT DRAIN CURRENT 0.6 0.4 VGS=3V 0.2 0.0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS 5 0 (V) 1 2 3 4 GATE TO SOURCE VOLTAGE RDS(ON) ID 10 —— VGS 5 6 (V) VGS 10 Ta=25℃ Ta=25℃ Pulsed Pulsed 8 RDS(ON) ( ) ( ) 8 6 ON-RESISTANCE RDS(ON) 0.4 0.2 0.0 ON-RESISTANCE 0.6 4 VGS=4.5V 2 6 ID=500mA 4 2 VGS=10V 0 0 0 200 400 600 DRAIN CURRENT IS —— 800 ID 1000 1200 0 2 4 6 GATE TO SOURCE VOLTAGE (mA) 8 VGS 10 (V) VSD 10 Ta=25℃ Pulsed SOURCE CURRENT IS (A) 1 0.1 0.01 1E-3 0.0 0.5 1.0 1.5 SOURCE TO DRAIN VOLTAGE 2.0 VSD 2.5 3.0 (V) A,Dec,2010