PHILIPS BAQ806

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D168
BAQ806
AM PIN diode
Product specification
File under Discrete Semiconductors, SC10
1998 Aug 03
Philips Semiconductors
Product specification
AM PIN diode
BAQ806
FEATURES
DESCRIPTION
• Glass passivated
DO-214AC surface mountable
package with glass passivated chip.
• High maximum operating
temperature
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
• Low leakage current
• Excellent stability
cathode
band
handbook, 4 columns
• UL 94V-O classified plastic
package
k
a
• Shipped in 12 mm embossed tape.
APPLICATIONS
Top view
• RF attenuator with low distortion for
frequencies above 100 kHz.
Side view
MSA474
Fig.1 Simplified outline (SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
100
V
VR
continuous reverse voltage
−
100
V
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+150
°C
1998 Aug 03
2
Philips Semiconductors
Product specification
AM PIN diode
BAQ806
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
CONDITIONS
forward voltage
reverse current
MIN.
TYP.
MAX.
IF = 100 mA; see Figs 2 and 3
−
0.9
1.1
V
IF = 100 mA; Tj = Tj max;
see Figs 2 and 3
−
0.7
0.9
V
VR = 100 V; see Fig. 4
−
−
0.1
µA
VR = 100 V; Tj = 125 °C; see Fig. 4
−
−
30
µA
15
25
−
µs
τ
charge carrier life time
when switched from IF = 10 mA to
IR = 6 mA; measured at 10% of IR;
see Fig. 13
Cd
diode capacitance
f = 1 MHz; see Figs 5, 6, 7 and 8
rD
rs
diode forward resistance
diode series resistance
UNIT
VR = 0 V
−
9
11
pF
VR = 2 V
−
5
6
pF
IF = 10 µA
−
3300
6000
Ω
IF = 100 µA
−
560
900
Ω
IF = 1 mA
−
62
90
Ω
IF = 10 mA
−
7
10
Ω
f = 100 kHz; see Figs 9 and 14
f = 100 kHz; see Figs 10, 11 and 12
VR = 0 V
1000
2100
−
kΩ
VR = 2 V
5000
12000
−
kΩ
f = 1 MHz; see Figs 10, 11 and 12
VR = 0 V
25
50
−
kΩ
VR = 2 V
100
250
−
kΩ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
VALUE
UNIT
25
K/W
note 1
100
K/W
note 2
150
K/W
Note
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig. 15
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig. 15.
For more information please refer to the ‘General Part of Handbook SC10’
1998 Aug 03
3
Philips Semiconductors
Product specification
AM PIN diode
BAQ806
GRAPHICAL DATA
MGG500
104
handbook, halfpage
MGG501
104
handbook, halfpage
IF
(mA)
103
IF
(mA)
103
102
102
10
10
1
1
10−1
10−1
10−2
0
0.4
0.8
1.2
1.6
10−2
2.0
0
0.4
Dotted line: Tj = Tj max.
Solid line: Tj = 25 °C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
MGG502
IR
(µA)
10
1
0
50
100
Tj (°C)
150
VR = VRRMmax.
Fig.4
Reverse current as a function of junction
temperature; maximum values.
1998 Aug 03
1.2
1.6
2.0
Dotted line: Tj = Tj max.
Solid line: Tj = 25 °C.
102
handbook, halfpage
10−1
0.8
VF (V)
VF (V)
4
Forward current as a function of forward
voltage; maximum values.
Philips Semiconductors
Product specification
AM PIN diode
BAQ806
MGM477
MGM478
12
10
handbook, halfpage
handbook, halfpage
Cd
(pF)
Cd
(pF)
8
0V
8
6
2V
4
4
2
0
10
0
2
0
4
6
8
VR (V)
10
102
103
f (kHz)
104
f = 1 MHz
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
Fig.6
MGM479
40
Diode capacitance as a function of
frequency; typical values.
MGM480
6
handbook, halfpage
handbook, halfpage
Cd
(pF)
Cd
(pF)
30
5
85 °C
25 °C
−40 °C
20
4
85 °C
25 °C
10
3
−40 °C
0
10
102
103
f (kHz)
2
10
104
VR = 0 V.
Fig.7
102
103
f (kHz)
VR = 2 V.
Diode capacitance as a function of
frequency; typical values.
1998 Aug 03
Fig.8
5
Diode capacitance as a function of
frequency; typical values.
104
Philips Semiconductors
Product specification
AM PIN diode
BAQ806
MGM481
104
handbook, halfpage
MGM482
105
handbook, halfpage
rs
(kΩ)
rD
(Ω)
VR = 2 V
104
103
0V
102
103
10
102
1
10
102
103
IF (µA)
10
10
104
Diode forward resistance as a function of
forward current; typical values.
f (kHz)
104
Fig.10 Diode series resistance as a function of
frequency; typical values.
MGM483
105
handbook, halfpage
rs
(kΩ)
103
Tj = 25 °C.
f = 100 kHz; see Fig. 14.
Fig.9
102
105
handbook, halfpage
rs
(kΩ)
−40 °C
104
104
MGM484
−40 °C
25 °C
85 °C
25 °C
103
103
102
10
10
85 °C
102
102
103
f (kHz)
10
10
104
102
103
f (kHz)
104
VR = 0 V.
VR = 2 V.
Fig.11 Diode series resistance as a function of
frequency; typical values.
Fig.12 Diode series resistance as a function of
frequency; typical values.
1998 Aug 03
6
Philips Semiconductors
Product specification
AM PIN diode
BAQ806
handbook, full pagewidth
10
IF
(mA)
10 µF
pulse
f = 1 kHz
DUT
τ
10 Ω
10 mA
0
10%
t
IR
(mA)
90%
6
MGG506
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.13 Charge carrier life time test circuit and definition.
50
handbook, halfpage
100
kHz
50 Ω
R1
1 µF
IF
R2
4.5
DUT
50 Ω
Vin
Vout
11 V
50
2.5
MGG507
IF (mA)
R1 (Ω)
R2 (kΩ)
3000
100
1
300
10
10
30
1
0.1
1.25
MSB213
Dimensions in mm.
Fig.14 Diode forward resistance test circuit.
1998 Aug 03
Fig.15 Printed-circuit board for surface mounting.
7
Philips Semiconductors
Product specification
AM PIN diode
BAQ806
PACKAGE OUTLINE
Transfer-moulded thermo-setting plastic small rectangular surface mounted package;
2 connectors
SOD106
H
D
A
A1
c
Q
E
b
(1)
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
E
H
Q
mm
2.3
2.0
0.05
1.6
1.4
0.2
4.5
4.3
2.8
2.4
5.5
5.1
3.3
2.7
Note
1. The marking band indicates the cathode.
OUTLINE
VERSION
SOD106
1998 Aug 03
REFERENCES
IEC
JEDEC
EIAJ
DO-214AC
EUROPEAN
PROJECTION
ISSUE DATE
97-06-09
8
Philips Semiconductors
Product specification
AM PIN diode
BAQ806
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Aug 03
9
Philips Semiconductors
Product specification
AM PIN diode
BAQ806
NOTES
1998 Aug 03
10
Philips Semiconductors
Product specification
AM PIN diode
BAQ806
NOTES
1998 Aug 03
11
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© Philips Electronics N.V. 1998
SCA60
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115104/00/01/pp12
Date of release: 1998 Aug 03
Document order number:
9397 750 03998