DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD67 Ripple blocking diode Product specification Supersedes data of 1998 Nov 20 1999 Oct 20 Philips Semiconductors Product specification Ripple blocking diode BYD67 FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass SOD87 package through Implotec(1) technology. The SOD87 is • High maximum operating temperature hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability k handbook, 4 columns a • Shipped in 8 mm embossed tape • Smallest surface mount rectifier package. MAM061 Fig.1 Simplified outline (SOD87) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 300 V VR continuous reverse voltage − 300 V IF(AV) average forward current Ttp = 85 °C; see Fig.2; averaged over any 20 ms period; see also Fig.4 − 1.2 A Tamb = 60 °C; PCB mounting (see Fig.8); see Fig.3; averaged over any 20 ms period; see also Fig.4 − 0.4 A IFRM repetitive peak forward current Ttp = 85 °C − 11 A Tamb = 60 °C − 3.7 A t = 10 ms half sine wave; Tj = 25 °C prior to surge; VR = VRRMmax − 5.0 A IFSM non-repetitive peak forward current Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C 1999 Oct 20 2 Philips Semiconductors Product specification Ripple blocking diode BYD67 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS MIN. TYP. MAX. UNIT IF = 1 A; Tj = Tj max; see Fig.5 − − 1.7 V IF = 1 A; see Fig.5 − − 2.3 V VR = VRRMmax; see Fig.6 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.6 − − 100 µA − − 350 ns 500 − − ns tfr forward recovery time when switched to IF = 1 A in 50 ns; see Fig.9 ton turn-on time when switched from VF = 0 to VF = 3 V; measured between 10% and 90% of IFmax; see Fig.11 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.11 − − 150 ns Cd diode capacitance f = 1 MHz; VR = 0; see Fig.7 − 17 − pF THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 VALUE UNIT 30 K/W 150 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8. For more information please refer to the ‘General Part of associated Handbook.’ 1999 Oct 20 3 Philips Semiconductors Product specification Ripple blocking diode BYD67 GRAPHICAL DATA MGM273 MGM272 0.6 2.0 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 1.6 0.4 1.2 0.8 0.2 0.4 0 0 40 0 80 120 0 160 200 Ttp (°C) 40 80 a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.8. Switched mode application. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). 120 160 200 Tamb (°C) Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MGM271 5 MLC301 6 handbook, halfpage handbook, halfpage P (W) IF (A) a = 3 2.5 2 1.57 4 1.42 4 3 2 2 1 0 0 0 0.4 0.8 1.2 1.6 2 IF(AV) (A) 0 1 2 3 4 V F (V) 5 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.4 1999 Oct 20 Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.5 4 Forward current as a function of forward voltage; maximum values. Philips Semiconductors Product specification Ripple blocking diode BYD67 MGA853 3 10halfpage handbook, MLC305 102 handbook, halfpage IR (µA) Cd (pF) 102 10 10 1 1 100 0 T j ( o C) 1 200 102 V R (V) 103 f = 1 MHz; Tj = 25 °C. VR = VRRMmax. Fig.6 10 Reverse current as a function of junction temperature; maximum values. Fig.7 50 handbook, halfpage Diode capacitance as a function of reverse voltage; typical values. MGC500 handbook, halfpage V F 25 100% 110% 7 50 t fr t IF 2 3 10% t MGA200 Dimensions in mm. Fig.8 Device mounted on a printed-circuit board. 1999 Oct 20 Fig.9 Forward recovery time definition. 5 Philips Semiconductors Product specification Ripple blocking diode BYD67 handbook, full pagewidth 3V VF DUT (V) 0 50 Ω 10 Ω 100% 90% IF (A) 10% 0 ton MBH530 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 10 ns. Fig.10 Test circuit and turn-on time waveform and definition. handbook, full pagewidth IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.11 Test circuit and reverse recovery time waveform and definition. 1999 Oct 20 6 MAM057 Philips Semiconductors Product specification Ripple blocking diode BYD67 PACKAGE OUTLINE Hermetically sealed glass surface mounted package; ImplotecTM(1) technology; 2 connectors SOD87 k a (2) D1 L L H DIMENSIONS (mm are the original dimensions) UNIT D D1 H L mm 2.1 2.0 2.0 1.8 3.7 3.3 0.3 D 0 1 2 mm scale Notes 1. Implotec is a trademark of Philips. 2. The marking indicates the cathode. REFERENCES OUTLINE VERSION IEC SOD87 100H03 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-03-31 99-06-04 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Oct 20 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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